نتائج البحث - "Van der Waals epitaxy"

المساهمون: EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), Université d'Artois (UA)-Centrale Lille-Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Université Paris-Saclay, Centre National de la Recherche Scientifique (CNRS), Renatech Network, CMNF, ANR-21-CE24-0030,TUNNE2D,Diodes tunnel miniaturisables à base de matériaux 2D(2021), ANR-22-PEEL-0011,ADICT,mAtériaux biDimensIonnels pour les Composants élecTroniques(2022)

المصدر: ISSN: 2053-1583 ; 2D Materials ; https://hal.science/hal-04648284 ; 2D Materials, 2024, 11 (3), pp.035031. ⟨10.1088/2053-1583/ad573a⟩.

مصطلحات موضوعية: 2D materials, molecular beam epitaxy, Van der Waals epitaxy, 2D on 3D heterostructure, WSe2, x-ray photoelectron spectroscopy, 2D materials Molecular Beam Epitaxy Van der Waals epitaxy 2D on 3D heterostructure WSe2 X-ray Photoelectron Spectroscopy, [SPI]Engineering Sciences [physics], [PHYS]Physics [physics]

Relation: hal-04648284; https://hal.science/hal-04648284; https://hal.science/hal-04648284/document; https://hal.science/hal-04648284/file/Chapuis%2Bet%2Bal_2024_2D_Mater._10.1088_2053-1583_ad573a.pdf

الاتاحة: https://hal.science/hal-04648284
https://hal.science/hal-04648284/document
https://hal.science/hal-04648284/file/Chapuis%2Bet%2Bal_2024_2D_Mater._10.1088_2053-1583_ad573a.pdf
https://doi.org/10.1088/2053-1583/ad573a

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5

Academic Journal

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

المؤلفون: Dongdong Liang, Bei Jiang, Zhetong Liu, Zhaolong Chen, Yaqi Gao, Shenyuan Yang, Rui He, Lulu Wang, Junxue Ran, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Jingyu Sun, Tongbo Wei

المصدر: Advanced Science, Vol 11, Iss 20, Pp n/a-n/a (2024)

مصطلحات موضوعية: GaN, graphene, monolithic integration, quasi van der waals epitaxy, Si(100), Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/cc06096a042946aea09b96c7aeafa2e8

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6

Academic Journal

Van der Waals epitaxy of Weyl-semimetal Td-WTe2

المؤلفون: Llopez, Alexandre, Leroy, Frédéric, Tagne-Kaegom, Calvin, Croes, Boris, Michon, Adrien, Mastropasqua, Chiara, Al Khalfioui, Mohamed, Curiotto, Stefano, Müller, Pierre, Saúl, Andrés, Kierren, Bertrand, Kremer, Geoffroy, Le Fèvre, Patrick, Bertran, François, Fagot-Revurat, Yannick, Cheynis, Fabien

المساهمون: Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Région PACA : Projet CROISSANT, Project CROISSANT, ANR-22-CE08-0023,FETh,Contrôle ferroélectrique de la conduction électrique et thermique à l'échelle nanométrique dans GeTe(2022), ANR-11-IDEX-0001,Amidex,INITIATIVE D'EXCELLENCE AIX MARSEILLE UNIVERSITE(2011)

المصدر: ISSN: 1944-8244.

مصطلحات موضوعية: transition metal dichalcogenide, nucleation and growth, angle-resolved photoemission spectroscopy, DFT calculations, electronic structure, van der Waals epitaxy, Td-WTe2, monolayer, bilayer, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: hal-04542981; https://hal.science/hal-04542981; https://hal.science/hal-04542981/document; https://hal.science/hal-04542981/file/WTe2.pdf

الاتاحة: https://hal.science/hal-04542981
https://hal.science/hal-04542981/document
https://hal.science/hal-04542981/file/WTe2.pdf
https://doi.org/10.1021/acsami.4c00676

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7

Academic Journal

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS 2 Layers by Plasma-Assisted Molecular Beam Epitaxy

المؤلفون: Iwan Susanto, Hong-Shan Liu, Yen-Ten Ho, Ing-Song Yu

المصدر: Nanomaterials, Vol 14, Iss 8, p 732 (2024)

مصطلحات موضوعية: gallium nitride, molybdenum disulfide, molecule beam epitaxy, chemical vapor deposition, van der Waals epitaxy, Chemistry, QD1-999

Relation: https://www.mdpi.com/2079-4991/14/8/732; https://doaj.org/toc/2079-4991; https://doaj.org/article/d8d8175d97534daab9fb8c19684d6d12

الاتاحة: https://doi.org/10.3390/nano14080732
https://doaj.org/article/d8d8175d97534daab9fb8c19684d6d12

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8

Academic Journal

Quantitative Scanning Transmission Electron Microscopy–High-Angle-Annular Dark-Field Study of the Structure of Pseudo-2D Sb2Te3 Films Grown by (Quasi) Van der Waals Epitaxy

المؤلفون: Sever, Vitomir, Bernier, Nicolas, Térébénec, Damien, Sabbione, Chiara, Paterson, Jessy, Castioni, Florian, Quéméré, Patrick, Jannaud, Audrey, Rouvière, Jean-Luc, Roussel, Hervé, Raty, Jean-Yves, Hippert, Françoise, Noé, Pierre

المصدر: Physica Status Solidi. Rapid Research Letters (2024)

مصطلحات موضوعية: chalcogenide phase-change materials, composition analyses, lattice parameters, Python libraries, Sb2Te3, scanning transmission electron microscopy–high-angle-annular dark-field images, thermal vibrations, Chalcogenide phase-change material, Composition analysis, High-angle annular dark-field images, Pseudo-2D, Python library, Scanning transmission electron microscopy, Scanning transmission electron microscopy–high-angle-annular dark-field image, Thermal vibration, Van der Waal, Van der Waals epitaxy, Materials Science (all), Condensed Matter Physics, General Materials Science, Physical, chemical, mathematical & earth Sciences, Physics, Physique, chimie, mathématiques & sciences de la terre, Physique

Relation: https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202300402; urn:issn:1862-6254; urn:issn:1862-6270

URL الوصول: https://orbi.uliege.be/handle/2268/313612

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9

Academic Journal

Applications of remote epitaxy and van der Waals epitaxy

المؤلفون: Ilpyo Roh, Seok Hyeon Goh, Yuan Meng, Justin S. Kim, Sangmoon Han, Zhihao Xu, Han Eol Lee, Yeongin Kim, Sang-Hoon Bae

المصدر: Nano Convergence, Vol 10, Iss 1, Pp 1-17 (2023)

مصطلحات موضوعية: Remote epitaxy, Van der Waals epitaxy, 2DLT, Heterogeneous integration, Freestanding membrane, Technology, Chemical technology, TP1-1185, Biotechnology, TP248.13-248.65, Science, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-5404

URL الوصول: https://doaj.org/article/0e8870296bff4ba4b1cd5629df35be2c

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10

Conference

Thin-film blue light-emitting diodes for flexible device operation down to a millimetric radius of curvature

المؤلفون: Duraz, Jules, Cambril, Edmond, Herth, Etienne, Frayssinet, Éric, Damilano, Benjamin, Sundaram, Suresh, Vuong, Phuong, Patriarche, Gilles, Ougazzaden, Abdallah, Tchernycheva, Maria, Bouchoule, Sophie

المساهمون: Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA), Georgia Tech Lorraine Metz, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology Atlanta -Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté COMUE (UBFC)-Université Bourgogne Franche-Comté COMUE (UBFC)

المصدر: Compound Semiconductor Week 2023 (CSW 2023) ; https://hal.science/hal-04683266 ; Compound Semiconductor Week 2023 (CSW 2023), May 2023, Jeju, South Korea ; http://www.csw2023.org/

مصطلحات موضوعية: flexible light-emitting diodes, thin-film light-emitting diodes, van der Waals epitaxy, flexible micro light-emitting diode (μLED) van der Waals epitaxy, flexible, micro light-emitting diode (μLED), [PHYS]Physics [physics]

جغرافية الموضوع: Jeju, South Korea

الاتاحة: https://hal.science/hal-04683266
https://hal.science/hal-04683266v1/document
https://hal.science/hal-04683266v1/file/Abstract-CSW2023_Duraz-Accepted-Oral.pdf

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11

Academic Journal

Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet

المصدر: Advanced Materials. 31(23)

مصطلحات موضوعية: Quantum Physics, Physical Sciences, Condensed Matter Physics, 2D materials, monolayer magnet, spin frustration, van der Waals epitaxy, vanadium diselenide, Chemical Sciences, Engineering, Nanoscience & Nanotechnology, Chemical sciences, Physical sciences

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/05w4083s
https://escholarship.org/content/qt05w4083s/qt05w4083s.pdf

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12

Academic Journal

Evidence of hexagonal germanium grains on annealed monolayer MoS2

المؤلفون: Xuejing Wang, Ryan Kaufmann, Andrew C. Jones, Renjie Chen, Towfiq Ahmed, Michael T. Pettes, Paul G. Kotula, Ismail Bilgin, Yongqiang Wang, Swastik Kar, Jinkyoung Yoo

المصدر: Materials Today Advances, Vol 19, Iss , Pp 100401- (2023)

مصطلحات موضوعية: Hexagonal germanium, van der waals epitaxy, Defect engineering, Transition metal dichalcogenides, Grain boundary, Strain, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590049823000619; https://doaj.org/toc/2590-0498

URL الوصول: https://doaj.org/article/31458e2057424c9d9d8fa91c8e5e9242

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13

Academic Journal

Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

المؤلفون: Liu Zhetong, Liu Bingyao, Chen Zhaolong, Yang Shenyuan, Liu Zhiqiang, Wei Tongbo, Gao Peng, Liu Zhongfan

المصدر: National Science Open, Vol 2 (2023)

مصطلحات موضوعية: graphene, 2D materials, heteroepitaxy, remote epitaxy, pinhole epitaxy, van der Waals epitaxy, Science, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2097-1168

URL الوصول: https://doaj.org/article/8a7eca1c0f814603b67c0aa90e3dee0f

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14

Conference

FABRICATION AND CHARACTERIZATION TECHNIQUES TO STUDY FLEXIBLE MICRO LIGHT-EMITTING DIODES WITH A MILLIMETRIC RADIUS OF CURVATURE

المؤلفون: Duraz, Jules, Cambril, Edmond, Herth, Etienne, Damilano, Benjamin, Sundaram, Suresh, Vuong, Phuong, Ougazzaden, Abdallah, Tchernycheva, Maria, Bouchoule, Sophie

المساهمون: Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA), Georgia Tech Lorraine Metz, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology Atlanta -Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté COMUE (UBFC)-Université Bourgogne Franche-Comté COMUE (UBFC)

المصدر: Journées Nationales sur les Technologies Emergentes en micro-nanofabrication (JNTE) ; https://hal.science/hal-04683281 ; Journées Nationales sur les Technologies Emergentes en micro-nanofabrication (JNTE), Nov 2022, Besançon, France ; https://2022jnte.sciencesconf.org/

مصطلحات موضوعية: Flexible light source, micro-LED : GaN-based LED, flexible micro light-emitting diode (µLED) van der Waals epitaxy, flexible, micro light-emitting diode (µLED), van der Waals epitaxy, [PHYS]Physics [physics]

جغرافية الموضوع: Besançon, France

الاتاحة: https://hal.science/hal-04683281
https://hal.science/hal-04683281v1/document
https://hal.science/hal-04683281v1/file/abstract_duraz_JNTE2022_final_accepted.pdf

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15

Academic Journal

Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals

المؤلفون: Lee, Yunah, Chang, Yunyeong, Ryu, Huije, Kim, Jong Hun, Watanabe, Kenji, Taniguchi, Takashi, Kim, Miyoung, Lee, Gwan-Hyoung

المساهمون: Lee, Gwan-Hyoung

مصطلحات موضوعية: RAMAN-SCATTERING, NANOSTRUCTURES, EVOLUTION, GRAPHITE, CONTACTS, GRAPHENE, GROWTH, METALS, MOS2, quasi-van der Waals epitaxy, recrystallization, heterointerface, gold nanocrystals, crystallographic alignment

Relation: ACS Applied Materials and Interfaces, Vol.15 No.4, pp.6092-6097; https://hdl.handle.net/10371/202065; 000906839800001; 2-s2.0-85145465972; 177825

الاتاحة: https://hdl.handle.net/10371/202065
https://doi.org/10.1021/acsami.2c18514

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16

Academic Journal

Room-Temperature Epitaxial Growth of Zn-Doped Iron Oxide Films on c-, a-, and r-Cut Sapphire Substrates

المؤلفون: Demange, Valérie, Portier, Xavier, Ollivier, Sophie, Pasturel, Mathieu, Roisnel, Thierry, Guilloux-Viry, Maryline, Hebert, Christian, Nistor, Magdalena, Cachoncinlle, Christophe, Millon, Eric, Perriere, Jacques

المساهمون: Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS), Synthèse Caractérisation Analyse de la Matière (ScanMAT), Université de Rennes (UR)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-Institut Rayonnement Matière de Saclay (DRF) (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA), Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), The research of the manuscript was supported by the French ANR (Agence Nationale de la Recherche) organization and the Normandie Region in acquiring the EELS spectrometer and the FIB setup in the framework of the PAI program (ANR-11-EQPX-0020). XRD measurements were performed on the Osirix platform (ScanMAT, UAR 2025 University of Rennes-CNRS), which received a financial support from the European Union through the European Regional Development Fund (ERDF), the Département d’Ille et Vilaine, Rennes Métropole and Région Bretagne (2015–2020 CPER project SCANMAT)., ANR-11-EQPX-0020,GENESIS,Groupe d'Etudes et de Nanoanalyses des Effets d'IrradiationS(2011)

المصدر: ISSN: 1528-7483.

مصطلحات موضوعية: Epitaxy, Lattices, Oxides, Spinel, Van der Waals epitaxy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: hal-04350858; https://hal.science/hal-04350858; https://hal.science/hal-04350858/document; https://hal.science/hal-04350858/file/cg-2023-004046.R3_Proof_hi.pdf

الاتاحة: https://hal.science/hal-04350858
https://hal.science/hal-04350858/document
https://hal.science/hal-04350858/file/cg-2023-004046.R3_Proof_hi.pdf
https://doi.org/10.1021/acs.cgd.3c00404

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17

Academic Journal

Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

المؤلفون: Gujrati, Rajat, Srivastava, Ashutosh, Vuong, Phuong, Ottapilakkal, Vishnu, Sama, Yves, N, Ngo, Thi Huong, Moudakir, Tarik, Patriarche, Gilles, Gautier, Simon, Voss, Paul, L, Sundaram, Suresh, Salvestrini, Jean Paul, Ougazzaden, Abdallah

المساهمون: Georgia Tech Lorraine Metz, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology Atlanta -Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté COMUE (UBFC)-Université Bourgogne Franche-Comté COMUE (UBFC), Institut Lafayette, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019)

المصدر: ISSN: 2365-709X ; Advanced Materials Technologies ; https://hal.science/hal-04495400 ; Advanced Materials Technologies, 2023, 8 (15), pp.2300147. ⟨10.1002/admt.202300147⟩.

مصطلحات موضوعية: selective area growth, simple mechanical lift-off and transfer, van der Waals epitaxy, [SPI.TRON]Engineering Sciences [physics]/Electronics

Relation: hal-04495400; https://hal.science/hal-04495400; https://hal.science/hal-04495400/document; https://hal.science/hal-04495400/file/MicroLEDS-AFM.pdf

الاتاحة: https://hal.science/hal-04495400
https://hal.science/hal-04495400/document
https://hal.science/hal-04495400/file/MicroLEDS-AFM.pdf
https://doi.org/10.1002/admt.202300147

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18

Academic Journal

Large‐Area Synthesis of Ferromagnetic Fe(5−x)GeTe2 /Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature

المؤلفون: Lv, Hua, da Silva, Alessandra, Figueroa, Adriana, Guillemard, Charles, Aguirre, Iván Fernández, Camosi, Lorenzo, Aballe, Lucia, Valvidares, Manuel, Valenzuela, Sergio, Schubert, Jürgen, Schmidbauer, Martin, Herfort, Jens, Hanke, Michael, Trampert, Achim, Engel-Herbert, Roman, Ramsteiner, Manfred, Lopes, Joao Marcelo J.

المساهمون: Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Spanish GovernmentMCIN/AEI/10.13039/501100011033, PID2019-111773RB-I00, Severo Ochoa Centres of Excellence programmeCEX2021 001214-S, European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020), European Project: 713673,INPhINIT

المصدر: ISSN: 1613-6810.

مصطلحات موضوعية: 2D magnets, 2D spintronics, Fe5−xGeTe2, graphene, van der Waals epitaxy, van der Waals heterostructures, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Relation: info:eu-repo/semantics/altIdentifier/arxiv/2303.10252; info:eu-repo/grantAgreement//881603/EU/Graphene Flagship Core Project 3/ GrapheneCore3; info:eu-repo/grantAgreement//713673/EU/Innovative doctoral programme for talented early-stage researchers in Spanish host organisations excellent in the areas of Science, Technology, Engineering and Mathematics (STEM). H2020-EU.1.3.4/INPhINIT; ARXIV: 2303.10252

الاتاحة: https://hal.science/hal-04592803
https://hal.science/hal-04592803v1/document
https://hal.science/hal-04592803v1/file/Lv%20et%20al.%20-%202023%20-%20Large%E2%80%90Area%20Synthesis%20of%20Ferromagnetic%20Fe%205%E2%88%92%20x%20GeTe%202%20Graphene%20van%20der%20Waals%20Heterostructures%20with%20Curie%20Temperature%20a.pdf
https://doi.org/10.1002/smll.202302387

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19

Academic Journal

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

المؤلفون: Vilasam, A.G.S., Adhikari, S., Gupta, B., Balendhran, S., Higashitarumizu, N., Tournet, J., Li, L., Javey, A., Crozier, K.B., Karuturi, S., Jagadish, C., Tan, H.H.

المصدر: http://dx.doi.org/10.1088/1361-6528/acf3f1.

مصطلحات موضوعية: InAs, nanowires, MOCVD, van der waals epitaxy, polycrystalline thin film

وصف الملف: application/pdf

Relation: ARC; Nanotechnology, 2023; 34(49):495601-1-495601-11; https://hdl.handle.net/2440/139668

الاتاحة: https://hdl.handle.net/2440/139668
https://doi.org/10.1088/1361-6528/acf3f1

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20

Academic Journal

Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy

المساهمون: Chu, Ying-Hao [National Chiao Tung Univ., Hsinchu (Taiwan). Dept. of Electrophysics. Dept. of Materials Science and Engineering; Academia Sinica, Taipei (Taiwan). Inst. of Physics; Industrial Technology Research Inst., Hsinchu (Taiwan). Material and Chemical Research Lab.] (ORCID:0000000234359084)

المصدر: ACS Nano; 11; 6

وصف الملف: Medium: ED; Size: p. 6122-6130

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1368662

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