المؤلفون: Marcello Cioni, Giovanni Giorgino, Alessandro Chini, Antonino Parisi, Giacomo Cappellini, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Ferdinando Iucolano

المصدر: Electronic Materials, Vol 5, Iss 3, Pp 132-144 (2024)

مصطلحات موضوعية: GaN, HEMTs, hot-electrons, VTH drift, RON-degradation, Instruments and machines, QA71-90

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2673-3978/5/3/9; https://doaj.org/toc/2673-3978

URL الوصول: https://doaj.org/article/0f17b224cb82418483bf3855ee71d1b7

المؤلفون: Pengfei Dai, Shaowei Wang, Hongliang Lu

المصدر: Micromachines, Vol 15, Iss 3, p 321 (2024)

مصطلحات موضوعية: GaN HEMT, VTH drift, high temperature and high voltage, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/15/3/321; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/03c4d921d05a4c09a1794b65c466f6b7

المؤلفون: Cioni M., Giorgino G., Chini A., Marletta G., Miccoli C., Castagna M. E., Luongo G., Moschetti M., Tringali C., Iucolano F.

المساهمون: Cioni, M., Giorgino, G., Chini, A., Marletta, G., Miccoli, C., Castagna, M. E., Luongo, G., Moschetti, M., Tringali, C., Iucolano, F.

مصطلحات موضوعية: 2-DEG density, Back-Effect, GaN HEMT, RON-degradation, Vertical Leakage, VTH drift

Relation: info:eu-repo/semantics/altIdentifier/isbn/979-8-3503-3713-6; ispartofbook:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023; 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023; https://hdl.handle.net/11380/1332187; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85183585579

الاتاحة: https://hdl.handle.net/11380/1332187
https://doi.org/10.1109/WiPDA58524.2023.10382224

المؤلفون: Zerarka, M., Rustichelli, V., Perrotin, O., Reynes, J.M., Trémouilles, David, Azzopardi, S., Serre, A., Bergeret, F., Allirand, L., Coccetti, F.

المساهمون: IRT Saint Exupéry - Institut de Recherche Technologique, Alter Technology France (Alter Technology), Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), SAFRAN Group, Safran Tech, Ippon Innovation, Vitesco Technologies, Projet SiCRET (IRT Saint Exupery)

المصدر: ISSN: 0026-2714.

مصطلحات موضوعية: SiC, HTGB, GSS, Vth degradation, Vth drift, planar technologie, trench technologie, Modeling, Reliability, [SPI]Engineering Sciences [physics]

الاتاحة: https://laas.hal.science/hal-04298338
https://doi.org/10.1016/j.microrel.2023.115190

المؤلفون: Wu, Yanlin, Nuo, Muqin, Yang, Junjie, Zheng, Zheyang, Zhang, Li, Chen, Jing, Hua, Mengyuan, Hao, Yilong, Yang, Xuelin, Shen, Bo, Wang, Maojun, Wei, Jin

مصطلحات الفهرس: Active-passivation p-GaN gate HEMT (AP-HEMT), Dynamic leakage current, Dynamic RON>degradation, Dynamic stability, Dynamic Vthdrift, Conference paper

URL: http://repository.hkust.edu.hk/ir/Record/1783.1-128172
https://doi.org/10.1109/ISPSD57135.2023.10147690
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1063-6854&rft.volume=2023-May&rft.issue=&rft.date=2023&rft.spage=378&rft.aulast=Wu&rft.aufirst=Yanlin&rft.atitle=High+Dynamic+Stability+in+Enhancement-Mode+Active-Passivation+p-GaN+Gate+HEMT&rft.title=Proceedings+of+the+International+Symposium+on+Power+Semiconductor+Devices+and+ICs
http://www.scopus.com/record/display.url?eid=2-s2.0-85163492340&origin=inward