المؤلفون: V. S. Volcheck, V. R. Stempitsky

المصدر: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 22, Iss 3, Pp 69-75 (2024)

مصطلحات موضوعية: infrared radiation, quantum well, intersubband transition, simulation, capture-escape model, gallium nitride, optical gain, optoelectronics, absorption, photodetector, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://doklady.bsuir.by/jour/article/view/3934; https://doaj.org/toc/1729-7648

URL الوصول: https://doaj.org/article/2bec6bff899849a2961909fb2cdf380d

المؤلفون: V. S. Volcheck, V. R. Stempitsky

المصدر: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 1, Pp 40-47 (2022)

مصطلحات موضوعية: diamond, gallium nitride, graphene, heat-removal system, heterostructure field-effect transistor, large signal performance, power electronics, thermal conductivity, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://doklady.bsuir.by/jour/article/view/3283; https://doaj.org/toc/1729-7648

URL الوصول: https://doaj.org/article/26bbe57c5e754a5da5c10bcca22ce9f7

المؤلفون: V. S. Volcheck, V. R. Stempitsky

المصدر: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 6, Pp 74-82 (2021)

مصطلحات موضوعية: heterostructure field-effect transistor, grapheme, gallium nitride, self-heating simulation, power electronics, passivation layer, heat-removal system, thermal conductivity, temperature, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://doklady.bsuir.by/jour/article/view/3161; https://doaj.org/toc/1729-7648

URL الوصول: https://doaj.org/article/4002ff597aca4505943cf51312911f19

المؤلفون: V. S. Volcheck, V. R. Stempitsky

المصدر: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 8, Pp 62-68 (2020)

مصطلحات موضوعية: nanoparticle, toxicity, functional material, gallium nitride, high electron mobility transistor, heterostructure, sensor, simulation, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://doklady.bsuir.by/jour/article/view/2933; https://doaj.org/toc/1729-7648

URL الوصول: https://doaj.org/article/cbb0dbb2a6724b10b42c6ecf2460c542

المؤلفون: V. S. Volcheck, I. Yu. Lovshenko, V. T. Shandarovich, Dao Dinh Ha

المصدر: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 3, Pp 72-80 (2020)

مصطلحات موضوعية: design, high-frequency transistor, heterostructure, semiconductor, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://doklady.bsuir.by/jour/article/view/2671; https://doaj.org/toc/1729-7648

URL الوصول: https://doaj.org/article/4a94fadbedb649edb84477dbbb80f376

المؤلفون: V. S. Volcheck, V. R. Stempitsky, В. С. Волчёк, В. Р. Стемпицкий

المصدر: Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series; Том 68, № 2 (2023); 156-166 ; Известия Национальной академии наук Беларуси. Серия физико-технических наук; Том 68, № 2 (2023); 156-166 ; 2524-244X ; 1561-8358 ; 10.29235/1561-8358-2023-68-2

مصطلحات موضوعية: управление тепловым режимом, device simulation, GaN, heat dissipation, heat-spreading element, heterostructure field-effect transistor, high electron mobility transistor, power electronics, self-heating, thermal management, нитрид бора, нитрид галлия, приборное моделирование, рассеяние тепла, саморазогрев, силовая электроника, теплоотводящий элемент, транзистор с высокой подвижностью электронов

وصف الملف: application/pdf

Relation: https://vestift.belnauka.by/jour/article/view/800/633; https://vestift.belnauka.by/jour/article/view/800

الاتاحة: https://vestift.belnauka.by/jour/article/view/800
https://doi.org/10.29235/1561-8358-2023-68-2-156-166

المؤلفون: V. S. Volcheck, M. S. Baranava, V. R. Stempitsky, В. С. Волчёк, М. С. Баранова, В. Р. Стемпицкий

المصدر: Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series; Том 67, № 3 (2022); 285-297 ; Известия Национальной академии наук Беларуси. Серия физико-технических наук; Том 67, № 3 (2022); 285-297 ; 2524-244X ; 1561-8358 ; 10.29235/1561-8358-2022-67-3

مصطلحات موضوعية: температурная зависимость, phonon, thermal conductivity, GaN, temperature dependence, теплопроводность, фонон

وصف الملف: application/pdf

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الاتاحة: https://vestift.belnauka.by/jour/article/view/753
https://doi.org/10.29235/1561-8358-2022-67-3-285-297

المؤلفون: V S Volcheck, V R Stempitsky

المصدر: Journal of Physics: Conference Series; 2017, Vol. 917 Issue 8, p1-1, 1p