المؤلفون: Tzu-Chuan Hsin, Hung-Yi Lin, Yu-Lon Lin, Jing-Wen Chen, Yuan-Chieh Tseng

مصطلحات موضوعية: Biophysics, Medicine, Molecular Biology, Neuroscience, Biotechnology, Hematology, Space Science, Chemical Sciences not elsewhere classified, perpendicular magnetic anisotropy, integrating resistive memristors, nio exchange coupling, resistive memristor coupled, multilevel rs stemmed, resistive memristor, resistive switching, perpendicular direction, nio layer, nio device, tunable unipolar, spintronic devices, similar studies, significant potential, neuromorphic computing, memory computing, integrate components, great blessing, device possesses, density features, conductive filament, bipolar switching

Relation: https://figshare.com/articles/journal_contribution/Resistive_Memristor_Coupled_with_Multilevel_Perpendicular_Magnetic_States/24560034

الاتاحة: https://doi.org/10.1021/acsaelm.3c01179.s001
https://figshare.com/articles/journal_contribution/Resistive_Memristor_Coupled_with_Multilevel_Perpendicular_Magnetic_States/24560034