نتائج البحث - "Tsunashi Shimizu"

1

Academic Journal

First-principles calculations for the reaction processes at 4H-SiC/SiO2 interface: The effect of wet oxidations / 第一原理計算を用いた4H-SiC/SiO2界面での酸化過程の検討：ウェット酸化の影響

المؤلفون: Hiroyuki Kageshima, Kenji Shiraishi, Kohji Nakamura, Masashi Uematsu, Tomonori Ito, Toru Akiyama, Tsunashi Shimizu, 中村浩次, 伊藤智徳, 影島博之, 植松真司, 清水紀志, 白石賢二, 秋山亨

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :2141

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2

Academic Journal

Reaction mechanisms at 4H-SiC/SiO2 interface by the coexistence of dry and wet oxidants / ドライおよびウェット酸化種が共存する4H-SiC/SiO2界面での反応機構の理論検討

المؤلفون: Hiroyuki Kageshima, Kenji Shiraishi, Masashi Uematsu, Tomonori Ito, Toru Akiyama, Tsunashi Shimizu, 伊藤智徳, 影島博之, 植松真司, 清水紀志, 白石賢二, 秋山亨

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2696

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3

Academic Journal

MOVPE条件下におけるⅢ族窒化物半導体無極性面の熱力学解析 / Thermodynamic analysis for Ⅲ-nitride semiconductors nonpolar planes during MOVPE

المؤلفون: Abdul Muizz Pradipto, Akira Kusaba, Kohji Nakamura, Tomonori Ito, Toru Akiyama, Tsunashi Shimizu, Yoshihiro Kangawa, Yuki Seta, アブドルムィッツプラディプト, 中村浩次, 伊藤智徳, 寒川義裕, 清水紀志, 瀬田雄基, 秋山亨, 草場彰

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3437

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4

Academic Journal

4H-SiC/SiO2界面での酸化反応におけるウェット酸化種の影響に関する理論的検討 / Theoretical study for the effect of wet oxidants on the oxidation reactions at 4H-SiC/SiO2 interface

المؤلفون: Hiroyuki Kageshima, Kenji Shiraishi, Kohji Nakamura, Masashi Uematsu, Pradipto Abdul Muizz, Tomonori Ito, Toru Akiyama, Tsunashi Shimizu, プラディプトアブダルムィッツ, 中村浩次, 伊藤智徳, 影島博之, 植松真司, 清水紀志, 白石賢二, 秋山亨

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :3182

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5

Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study

المؤلفون: Masashi Uematsu, Toru Akiyama, Kohji Nakamura, Hiroyuki Kageshima, Tsunashi Shimizu, Tomonori Ito, Kenji Shiraishi

المصدر: ECS Transactions. 98:37-46

مصطلحات موضوعية: Materials science, Chemical physics, Interface (Java), Ab initio

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f1efb1bae8b23056445d032c0394997
https://doi.org/10.1149/09803.0037ecst

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6

Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study

المؤلفون: Toru Akiyama, Tsunashi Shimizu, Tomonori Ito, Hiroyuki Kageshima, Kenji Shiraishi

المصدر: Surface Science. 723:122102

مصطلحات موضوعية: Materials Chemistry, Surfaces and Interfaces, Condensed Matter Physics, Surfaces, Coatings and Films

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1c73382a3e9808e4b918a079ad2ce12c
https://doi.org/10.1016/j.susc.2022.122102

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7

Reactions of NO molecule with carbon-related defects at 4H-SiC/SiO2 interface under dry oxidation conditions

المؤلفون: Tsunashi Shimizu, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi

المصدر: Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::fdea1a6ac117eb394e900ee56a783617
https://doi.org/10.7567/ssdm.2020.d-6-03

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8

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces

المؤلفون: Toru Akiyama, Tsunashi Shimizu, Tomonori Ito, Hiroyuki Kageshima, Kenta Chokawa, Kenji Shiraishi

المصدر: Japanese Journal of Applied Physics. 61:SH1002

مصطلحات موضوعية: Physics and Astronomy (miscellaneous), General Engineering, General Physics and Astronomy

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8a21178f68f49e44f6cc02bc184c342a
https://doi.org/10.35848/1347-4065/ac5a96

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9

Effective approach for calculating individual energy of step edges on polar AlN(0001) and GaN(0001) surfaces

المؤلفون: Takumi Ohka, Tsunashi Shimizu, Tomonori Ito, Atsutaka Nakatani, Toru Akiyama

المصدر: Japanese Journal of Applied Physics. 60:080701

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), General Engineering, General Physics and Astronomy, Polar, Step edges, Molecular physics, Energy (signal processing)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7970d92ebcf8eb1bc1d31219c30b1b9d
https://doi.org/10.35848/1347-4065/ac1128

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10

Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation

المؤلفون: Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Tsunashi Shimizu, Kenji Shiraishi, Toru Akiyama, Kohji Nakamura

المصدر: Japanese Journal of Applied Physics. 60:SBBD10

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Annealing (metallurgy), Interface (Java), General Engineering, Ab initio, General Physics and Astronomy, Physical chemistry, Molecule

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e83097bdcc169d34f5a50686397563d6
https://doi.org/10.35848/1347-4065/abdcb1

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11

Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface

المؤلفون: Tomonori Ito, Tsunashi Shimizu, Abdul-Muizz Pradipto, Kenji Shiraishi, Kohji Nakamura, Hiroyuki Kageshima, Toru Akiyama, Masashi Uematsu

المصدر: Japanese Journal of Applied Physics. 59:SMMD01

مصطلحات موضوعية: 010302 applied physics, Thermal oxidation, Reaction mechanism, Physics and Astronomy (miscellaneous), Chemistry, General Engineering, General Physics and Astronomy, Photochemistry, 01 natural sciences, Redox, Dissociation (chemistry), Ab initio quantum chemistry methods, 0103 physical sciences, Molecule, Wet oxidation

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2624aecb6e28389e69e99382d30585fb
https://doi.org/10.35848/1347-4065/ab85dd

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12

Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions

المؤلفون: Toru Akiyama, Yuki Seta, Tsunashi Shimizu, Tomonori Ito, Abdul-Muizz Pradipto, Kohji Nakamura, Akira Kusaba, Yoshihiro Kangawa

المصدر: Japanese Journal of Applied Physics. 59:028003

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Vapor phase, General Engineering, Analytical chemistry, General Physics and Astronomy, Nitride, Epitaxy

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::aa49b85ce26ded089be7fe32cbaad35c
https://doi.org/10.35848/1347-4065/ab68af

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13

Academic Journal

Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions.

المؤلفون: Tsunashi Shimizu, Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa

المصدر: Japanese Journal of Applied Physics; 2/1/2020, Vol. 59 Issue 2, p1-1, 1p

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