نتائج البحث - "Trinh, Cham Thi"

المساهمون: European Regional Development Fund, State Government of North Rhine-Westphalia in the Framework of the Up-LLPC, German Academic Exchange Service, Javna Agencija za Raziskovalno Dejavnost RS

المصدر: IEEE Journal of Photovoltaics ; volume 10, issue 5, page 1246-1253 ; ISSN 2156-3381 2156-3403

الاتاحة: http://dx.doi.org/10.1109/jphotov.2020.3001908
http://xplorestaging.ieee.org/ielx7/5503869/9171611/09127969.pdf?arnumber=9127969

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7

Academic Journal

Study on minority-carrier lifetime mapping of BaSi2 formed on multicrystalline Si substrates

المؤلفون: KAORU TOKO, MASAKAZU BABA, NORITAKA USAMI, TAKASHI SEKIGUCHI, TAKASHI SUEMASU, TRINH CHAM THI, YUNPENG LI

المصدر: JSAP Annual Meetings Extended Abstracts. 2015, :2608

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8

Academic Journal

Laser firing in silicon heterojunction interdigitated back contact architecture for low contact resistance

المؤلفون: Garud, Siddhartha, Trinh, Cham Thi, Rhein, Holger, Kühnapfel, Sven, Gall, Stefan, Schlatmann, Rutger, Rech, Bernd, Amkreutz, Daniel

المساهمون: European Regional Development fund, state government of North Rhine-Westphalia, Helmholtz Innovation Lab HySPRINT

المصدر: Solar Energy Materials and Solar Cells ; volume 203, page 110201 ; ISSN 0927-0248

الاتاحة: http://dx.doi.org/10.1016/j.solmat.2019.110201
https://api.elsevier.com/content/article/PII:S0927024819305306?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0927024819305306?httpAccept=text/plain

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9

Academic Journal

Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C.

المؤلفون: Hideki Matsumura, Taro Hayakawa, Tatsunori Ohta, Yuki Nakashima, Motoharu Miyamoto, Trinh Cham Thi, Koichi Koyama, Keisuke Ohdaira

المصدر: Journal of Applied Physics; 2014, Vol. 116 Issue 11, p114502-1-114502-10, 10p, 1 Diagram, 1 Chart, 18 Graphs

مصطلحات موضوعية: PHOSPHORUS, BORON, SILICON, ATOMS, SECONDARY ion mass spectrometry, SURFACE potential, VELOCITY

10

Academic Journal

Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer.

المؤلفون: Trinh Cham Thi^1,2 s1240009@jaist.ac.jp, Koichi Koyama^1,2, Keisuke Ohdaira^1,2, Hideki Matsumura^1,2

المصدر: Journal of Applied Physics. 2014, Vol. 116 Issue 4, p044510-1-044510-7. 7p.

مصطلحات موضوعية: *CHEMICAL vapor deposition, *SILICON nitride, *INDUCTIVE effect, *SOLAR cells, *SECONDARY ion mass spectrometry

11

Academic Journal

Passivation of Liquid‐Phase Crystallized Silicon With PECVD‐SiN x and PECVD‐SiN x /SiO x

المؤلفون: Preissler, Natalie, Amkreutz, Daniel, Dulanto, Jorge, Töfflinger, Jan Amaru, Trinh, Cham Thi, Trahms, Martina, Abou‐Ras, Daniel, Kirmse, Holm, Weingärtner, Roland, Rech, Bernd, Schlatmann, Rutger

المساهمون: Peruvian National Fund for Scientific and Technological Development (FONDECYT)

المصدر: physica status solidi (a) ; volume 215, issue 14 ; ISSN 1862-6300 1862-6319

الاتاحة: http://dx.doi.org/10.1002/pssa.201800239
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.201800239
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800239

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12

Academic Journal

Progress in and potential of liquid phase crystallized silicon solar cells

المؤلفون: Trinh, Cham Thi, Schlatmann, Rutger, Rech, B., Amkreutz, Daniel

المصدر: Solar Energy ; volume 175, page 75-83 ; ISSN 0038-092X

الاتاحة: http://dx.doi.org/10.1016/j.solener.2017.12.041
https://api.elsevier.com/content/article/PII:S0038092X17311234?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038092X17311234?httpAccept=text/plain

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13

Conference

Control of the electrical properties of BaSi 2 evaporated films for solar cell applications

المؤلفون: Hara, Kosuke O., Trinh, Cham Thi, Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu, Kurokawa, Yasuyoshi, Suemasu, Takashi, Usami, Noritaka

المصدر: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) ; page 2786-2789

الاتاحة: http://dx.doi.org/10.1109/pvsc.2016.7750159
http://xplorestaging.ieee.org/ielx7/7701171/7749395/07750159.pdf?arnumber=7750159

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14

Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

المؤلفون: Keisuke Ohdaira, Koichi Koyama, Hideki Matsumura, Trinh Cham Thi

المصدر: Thin Solid Films. 575:60-63

مصطلحات موضوعية: Materials science, Hydrogen, Passivation, Metals and Alloys, Analytical chemistry, chemistry.chemical_element, Field effect, Surfaces and Interfaces, Carrier lifetime, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Silicon nitride, chemistry, Materials Chemistry, Wafer, Crystalline silicon, Deposition (law)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b94f3410a419a67187bb480b4cb2e0da
https://doi.org/10.1016/j.tsf.2014.10.016

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15

Academic Journal

Postannealing effects on undoped BaSi 2 evaporated films grown on Si substrates

المؤلفون: Suhara, Takamichi, Murata, Koichi, Navabi, Aryan, Hara, Kosuke O., Nakagawa, Yoshihiko, Trinh, Cham Thi, Kurokawa, Yasuyoshi, Suemasu, Takashi, Wang, Kang L., Usami, Noritaka

المصدر: Japanese Journal of Applied Physics ; volume 56, issue 5S1, page 05DB05 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.7567/jjap.56.05db05
http://stacks.iop.org/1347-4065/56/i=5S1/a=05DB05/pdf
http://stacks.iop.org/1347-4065/56/i=5S1/a=05DB05?key=crossref.6e360b7998cf2372229d9a82a4e06d04

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16

Academic Journal

Growth of BaSi 2 film on Ge(100) by vacuum evaporation and its photoresponse properties

المؤلفون: Trinh, Cham Thi, Nakagawa, Yoshihiko, Hara, Kosuke O., Kurokawa, Yasuyoshi, Takabe, Ryota, Suemasu, Takashi, Usami, Noritaka

المصدر: Japanese Journal of Applied Physics ; volume 56, issue 5S1, page 05DB06 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.7567/jjap.56.05db06
http://stacks.iop.org/1347-4065/56/i=5S1/a=05DB06/pdf
http://stacks.iop.org/1347-4065/56/i=5S1/a=05DB06?key=crossref.d004608ad0357416446b9033541b1387

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17

Academic Journal

Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi 2 , a potential light absorber for solar cells

المؤلفون: Bayu, M. Emha, Trinh, Cham Thi, Takabe, Ryota, Yachi, Suguru, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi

المصدر: Japanese Journal of Applied Physics ; volume 56, issue 5S1, page 05DB01 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.7567/jjap.56.05db01
http://stacks.iop.org/1347-4065/56/i=5S1/a=05DB01/pdf
http://stacks.iop.org/1347-4065/56/i=5S1/a=05DB01?key=crossref.f8ab65e5a7eca123c607cc0acf1db593

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18

Academic Journal

Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi 2 films

المؤلفون: Hara, Kosuke O., Trinh, Cham Thi, Kurokawa, Yasuyoshi, Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu, Usami, Noritaka

المصدر: Japanese Journal of Applied Physics ; volume 56, issue 4S, page 04CS07 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.7567/jjap.56.04cs07
http://stacks.iop.org/1347-4065/56/i=4S/a=04CS07/pdf
http://stacks.iop.org/1347-4065/56/i=4S/a=04CS07?key=crossref.52ec9051484be93bc5b85a3a2e19e6a8

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19

Academic Journal

Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source

المؤلفون: Hara, Kosuke O., Trinh, Cham Thi, Kurokawa, Yasuyoshi, Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu, Usami, Noritaka

المساهمون: JSPS

المصدر: Thin Solid Films ; volume 636, page 546-551 ; ISSN 0040-6090

الاتاحة: http://dx.doi.org/10.1016/j.tsf.2017.06.055
https://api.elsevier.com/content/article/PII:S004060901730490X?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S004060901730490X?httpAccept=text/plain

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20

Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon

المؤلفون: Hideki Matsumura, Keisuke Ohdaira, Koichi Koyama, Trinh Cham Thi

المصدر: Solar Energy Materials and Solar Cells. 100:169-173

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9671d21bcdedba8965b08afd5dd73557
https://doi.org/10.1016/j.solmat.2012.01.010

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