المؤلفون: Hiroo MASUDA, Masakazu AOKI, Shin-ichi OHKAWA

المصدر: IEICE Transactions on Electronics. 2008, E91.C(4):647

المؤلفون: Skopalík, Daniel

Thesis Advisors: Krejčí, Jan, Lattenberg, Ivo

مصطلحات موضوعية: Measuring equipment with USB interface., Measuring equipment based on AVR microcontroller, Transistor testing, Měření parametrů tranzistorů, měřicí přístroj s rozhraním USB, Transistor parameters measurement, testování tranzistorů, měřicí přístroj s mikrokontrolérem AVR

الاتاحة: http://www.nusl.cz/ntk/nusl-377346

المؤلفون: A. Shluger, D. Veksler, G. Bersuker, Matthew Watkins

مصطلحات موضوعية: F310 - Applied physics, H600 - Electronic & electrical engineering, Activation/deactivation, Charge pumping, Chemical activation, Defects, Electrical characteristic, Hafnium oxides, High-K gate stacks, Logic gates, PBTI, SILC, Stress-induced instabilities, Transistor parameters

Relation: 10779/lincoln.25167875.v1; https://figshare.com/articles/conference_contribution/Activation_of_electrically_silent_defects_in_the_high-k_gate_stacks/25167875

الاتاحة: https://figshare.com/articles/conference_contribution/Activation_of_electrically_silent_defects_in_the_high-k_gate_stacks/25167875

المؤلفون: Genoe, J., Obata, K., Ameys, M., Myny, K., Ke, T.H., Nag, M., Steudel, S., Schols, S., Maas, J., Tripathi, A., Van Der Steen, J.-L., Ellis, T., Gelinck, G.H., Heremans, P.

المصدر: 2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014, 9 February 2014 through 13 February 2014, San Francisco, CA, 488-489

مصطلحات موضوعية: Electronics, Active matrix OLED, Battery lifetime, Design and implementations, Pixel intensity variations, Reference currents, Static power consumption, Static power reduction, Transistor parameters, Luminance, Pixels, Pulse width modulation, Shift registers, Organic light emitting diodes (OLED), Industrial Innovation, Mechanics, Materials and Structures, HOL - Holst, TS - Technical Sciences

Relation: uuid:7028f588-0771-483b-a570-507f14009890; 500750; http://resolver.tudelft.nl/uuid:7028f588-0771-483b-a570-507f14009890

الاتاحة: http://resolver.tudelft.nl/uuid:7028f588-0771-483b-a570-507f14009890

المؤلفون: Ashutosh Tripathi, Kris Myny, Paul Heremans, Soeren Steudel, Tim Ellis, Tung Huei Ke, Manoj Nag, Jan-Laurens van der Steen, Koji Obata, Sarah Schols, Jan Genoe, Joris Maas, Marc Ameys, Gerwin H. Gelinck

المصدر: 2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014, 9 February 2014 through 13 February 2014, San Francisco, CA, 488-489
ISSCC

مصطلحات موضوعية: Reference currents, Brightness, Engineering, Battery lifetime, HOL - Holst, Static power reduction, Active matrix OLED, Pixels, Pulse width modulation, law.invention, Pixel intensity variations, law, Color depth, OLED, Mechanics, Materials and Structures, TS - Technical Sciences, Shift registers, Industrial Innovation, Pixel, business.industry, Transistor, Electrical engineering, Transistor parameters, Active matrix, Organic light emitting diodes (OLED), AMOLED, Design and implementations, Luminance, Electronics, business, Pulse-width modulation, Static power consumption

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d097b94208bfc0d1eb2b3fc9cf5c8c9
http://resolver.tudelft.nl/uuid:7028f588-0771-483b-a570-507f14009890

مصطلحات موضوعية: Reference currents, TS - Technical Sciences, Shift registers, Industrial Innovation, Battery lifetime, HOL - Holst, Static power reduction, Active matrix OLED, Pixels, Mechanics, Pulse width modulation, Transistor parameters, Organic light emitting diodes (OLED), Pixel intensity variations, Design and implementations, Luminance, Materials and Structures, Electronics, Static power consumption

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dris___00893::32f1a82ffead7c33629fa3471e656e31
http://resolver.tudelft.nl/uuid:7028f588-0771-483b-a570-507f14009890

المؤلفون: Rossel, P., Tranduc, Henri, Sanchez, Jean-Louis, Bellaouar, A.

المصدر: ISSN: 0035-1687.

مصطلحات موضوعية: characteristics measurement, insulated gate field effect transistors, normal configuration, MOS transistor parameters, effective channel length, carrier mobility, mobility roll off coefficient, series drain, source resistances, output conductance, transfer characteristics, reverse configuration, [PHYS.HIST]Physics [physics]/Physics archives

Relation: jpa-00245110; https://hal.archives-ouvertes.fr/jpa-00245110; https://hal.archives-ouvertes.fr/jpa-00245110/document; https://hal.archives-ouvertes.fr/jpa-00245110/file/ajp-rphysap_1983_18_8_487_0.pdf

الاتاحة: https://hal.archives-ouvertes.fr/jpa-00245110
https://hal.archives-ouvertes.fr/jpa-00245110/document
https://hal.archives-ouvertes.fr/jpa-00245110/file/ajp-rphysap_1983_18_8_487_0.pdf
https://doi.org/10.1051/rphysap:01983001808048700

المؤلفون: Skopalík, Daniel

المساهمون: Lattenberg, Ivo, Krejčí, Jan

مصطلحات موضوعية: Měření parametrů tranzistorů, testování tranzistorů, měřicí přístroj s mikrokontrolérem AVR, měřicí přístroj s rozhraním USB, Transistor parameters measurement, Transistor testing, Measuring equipment based on AVR microcontroller, Measuring equipment with USB interface

وصف الملف: application/pdf; application/zip; text/html

Relation: SKOPALÍK, D. Tester tranzistorů připojitelný přes USB [online]. Brno: Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. 2018.; 110039; http://hdl.handle.net/11012/81221

الاتاحة: http://hdl.handle.net/11012/81221

المؤلفون: Roy, S C Dutta

مصطلحات موضوعية: Wien Bridge Oscillator, Oscillator Circuit, Voltage Transfer Function, Transistor Parameters, Wheatstone’s Bridge

Relation: Indian Journal of Physics 37, 245-251 (1962); http://hdl.handle.net/10821/3745

الاتاحة: http://hdl.handle.net/10821/3745

المؤلفون: A. Bellaouar, H. Tranduc, P. Rossel, Jean-Louis Sanchez

المصدر: Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1983, 18 (8), pp.487-493. ⟨10.1051/rphysap:01983001808048700⟩

مصطلحات موضوعية: 010302 applied physics, Physics, effective channel length, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, series drain, 6. Clean water, mobility roll off coefficient, insulated gate field effect transistors, reverse configuration, normal configuration, [PHYS.HIST]Physics [physics]/Physics archives, 0103 physical sciences, MOS transistor parameters, source resistances, output conductance, transfer characteristics, characteristics measurement, 0210 nano-technology, Humanities, carrier mobility

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cbdce3fb3a10546cf17759bb5c8cfbd
https://hal.archives-ouvertes.fr/jpa-00245110/file/ajp-rphysap_1983_18_8_487_0.pdf

المؤلفون: Lattenberg, Ivo, Krejčí, Jan, Skopalík, Daniel

مصطلحات الفهرس: Měření parametrů tranzistorů, testování tranzistorů, měřicí přístroj s mikrokontrolérem AVR, měřicí přístroj s rozhraním USB, Transistor parameters measurement, Transistor testing, Measuring equipment based on AVR microcontroller, Measuring equipment with USB interface., Text

URL: http://hdl.handle.net/11012/81221

المؤلفون: Lattenberg, Ivo, Krejčí, Jan

مصطلحات الفهرس: Měření parametrů tranzistorů, testování tranzistorů, měřicí přístroj s mikrokontrolérem AVR, měřicí přístroj s rozhraním USB, Transistor parameters measurement, Transistor testing, Measuring equipment based on AVR microcontroller, Measuring equipment with USB interface., Text

URL: http://hdl.handle.net/11012/81221

المؤلفون: Lattenberg, Ivo, Krejčí, Jan

مصطلحات الفهرس: Měření parametrů tranzistorů, testování tranzistorů, měřicí přístroj s mikrokontrolérem AVR, měřicí přístroj s rozhraním USB, Transistor parameters measurement, Transistor testing, Measuring equipment based on AVR microcontroller, Measuring equipment with USB interface., Text

URL: http://hdl.handle.net/11012/81221

المؤلفون: Lattenberg, Ivo, Krejčí, Jan

مصطلحات الفهرس: Měření parametrů tranzistorů, testování tranzistorů, měřicí přístroj s mikrokontrolérem AVR, měřicí přístroj s rozhraním USB, Transistor parameters measurement, Transistor testing, Measuring equipment based on AVR microcontroller, Measuring equipment with USB interface., Text

URL: http://hdl.handle.net/11012/81221

المؤلفون: Lattenberg, Ivo, Krejčí, Jan, Skopalík, Daniel

مصطلحات الفهرس: Měření parametrů tranzistorů, testování tranzistorů, měřicí přístroj s mikrokontrolérem AVR, měřicí přístroj s rozhraním USB, Transistor parameters measurement, Transistor testing, Measuring equipment based on AVR microcontroller, Measuring equipment with USB interface., Text

URL: http://hdl.handle.net/11012/81221