يعرض 1 - 20 نتائج من 8,776 نتيجة بحث عن '"Transient spectroscopy"', وقت الاستعلام: 0.65s تنقيح النتائج
  1. 1
    Academic Journal
    Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3.

    المؤلفون: Vasilev, A. A.1 (AUTHOR) AAVasilev@outlook.com, Kochkova, A. I.1 (AUTHOR), Polyakov, A. Y.1 (AUTHOR), Romanov, A. A.1 (AUTHOR), Matros, N. R.1 (AUTHOR), Alexanyan, L. A.1 (AUTHOR), Shchemerov, I. V.1 (AUTHOR), Pearton, S. J.2 (AUTHOR)

    المصدر: Journal of Applied Physics. 7/14/2024, Vol. 136 Issue 2, p1-8. 8p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *DENSITY functional theory, *ACTIVATION energy


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  2. 2
    Academic Journal
    Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC.

    المؤلفون: Kumar, P.1 (AUTHOR) kumar@aps.ee.ethz.ch, Bathen, M. E.1 (AUTHOR), Martins, M. I. M.1,2 (AUTHOR), Prokscha, T.2 (AUTHOR), Grossner, U.1 (AUTHOR)

    المصدر: Journal of Applied Physics. 5/14/2024, Vol. 135 Issue 18, p1-8. 8p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *CONDUCTION bands, *OXIDATION, *DEPTH profiling, *HEAT equation


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  3. 3
    Academic Journal
    Probing the oxygen vacancy associated native defects in high-κ HfO2 using deep level transient spectroscopy.

    المؤلفون: Kumar, Arvind1 (AUTHOR) arvindkumar@allduniv.ac.in, Mondal, Sandip2 (AUTHOR), Koteswara Rao, K. S. R.3 (AUTHOR)

    المصدر: Journal of Applied Physics. 1/28/2024, Vol. 135 Issue 4, p1-7. 7p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *ELECTRON traps, *COMPLEMENTARY metal oxide semiconductors, *SILICON films, *CONDUCTION bands


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  4. 4
    Academic Journal
    Optical and electrical studies on the TS defect in 4H-SiC.

    المؤلفون: Lehmeyer, Johannes A F1 (AUTHOR), Fuchs, Alexander D1 (AUTHOR), Li, Zhengming1 (AUTHOR), Bornträger, Titus1 (AUTHOR), Candolfi, Fabio1 (AUTHOR), Schober, Maximilian2 (AUTHOR), Fischer, Marcus3 (AUTHOR), Hartmann, Martin3 (AUTHOR), Neu, Elke4 (AUTHOR), Bockstedte, Michel2 (AUTHOR), Krieger, Michael1 (AUTHOR), Weber, Heiko B1 (AUTHOR) heiko.weber@fau.de

    المصدر: Journal of Physics D: Applied Physics. 1/6/2025, Vol. 58 Issue 1, p1-8. 8p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *STRAINS & stresses (Mechanics), *VALENCE bands, *OPTICAL properties, *PHOTOLUMINESCENCE


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  5. 5
    Academic Journal
    Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy.

    المؤلفون: Ogawa, Shingo1 (AUTHOR) shingo.ogawa.s9@trc.toray, Mizobata, Hidetoshi2 (AUTHOR), Kobayashi, Takuma2 (AUTHOR), Shimura, Takayoshi2 (AUTHOR), Watanabe, Heiji2 (AUTHOR)

    المصدر: Journal of Applied Physics. 9/7/2023, Vol. 134 Issue 9, p1-7. 7p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *METAL oxide semiconductor capacitors, *CAPACITORS, *ELECTRON tunneling, *ELECTRON traps, *ANNEALING of metals, *CONDUCTION bands


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  6. 6
    Academic Journal
    Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD.

    المؤلفون: Lee, Tae-Hee1 (AUTHOR), Park, Se-Rim1 (AUTHOR), Choi, Ji-Soo1 (AUTHOR), Chung, Seung-Hwan1 (AUTHOR), Kim, Min-Yeong1 (AUTHOR), Lee, Geon-Hee1 (AUTHOR), Cho, Seong-Ho2 (AUTHOR), Bae, Si-Young2 (AUTHOR), Kim, Il Ryong3 (AUTHOR), Kim, Min Kyu3 (AUTHOR), Lim, Byeong Cheol3 (AUTHOR), Schweitz, Michael A.1 (AUTHOR), Koo, Sang-Mo1 (AUTHOR) smkoo@kw.ac.kr

    المصدر: Applied Physics A: Materials Science & Processing. Oct2024, Vol. 130 Issue 10, p1-7. 7p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *SCHOTTKY barrier diodes, *CHEMICAL vapor deposition, *ATOMIC force microscopy, *CARRIER density


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  7. 7
    Academic Journal
    电子辐照对4H-SiC MOS 材料缺陷的影响.

    Alternate Title: Effects of Electron Irradiation on Defects of 4H-SiC MOS Materials.

    المؤلفون: 刘 帅1,2 0622478@zju.edu.cn, 熊慧凡1,2, 杨 霞2,3, 杨德仁1,2, 皮孝东1,2 xdpi@zju.edu.cn, 宋立辉1,2 songlihui@zju.edu.cn

    المصدر: Journal of Synthetic Crystals. Sep2024, Vol. 53 Issue 9, p1536-1541. 6p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *ENERGY levels (Quantum mechanics), *INTERSTITIAL defects, *IRRADIATION, *CAPACITORS, *ELECTRON beams


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  8. 8
    Academic Journal
    Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3.

    المؤلفون: Vasilev, A. A., Kochkova, A. I., Polyakov, A. Y., Romanov, A. A., Matros, N. R., Alexanyan, L. A., Shchemerov, I. V., Pearton, S. J.

    المصدر: Journal of Applied Physics; 7/14/2024, Vol. 136 Issue 2, p1-8, 8p

    مصطلحات موضوعية: DEEP level transient spectroscopy, DENSITY functional theory, ACTIVATION energy


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  9. 9
    Academic Journal
    Transient photocapacitance spectroscopy on Au/TiO2 Schottky diodes with rolled-up nanomembrane electrodes.

    المؤلفون: Berg, L.1 (AUTHOR), Schnorr, L.1 (AUTHOR), Merces, L.2 (AUTHOR), Bettini, J.3 (AUTHOR), Bof Bufon, C. C.4 (AUTHOR), Heinzel, T.1 (AUTHOR) thomas.heinzel@hhu.de

    المصدر: Journal of Applied Physics. 2/14/2023, Vol. 133 Issue 6, p1-7. 7p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *RATE equation model, *SCHOTTKY barrier diodes, *ELECTRODES, *BINDING energy, *ELECTRON traps, *TITANIUM dioxide


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  10. 10
    Academic Journal
    Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3.

    المؤلفون: McGlone, Joe F.1 (AUTHOR) mcglone.55@osu.edu, Ghadi, Hemant1 (AUTHOR), Cornuelle, Evan1 (AUTHOR), Armstrong, Andrew2 (AUTHOR), Burns, George2 (AUTHOR), Feng, Zixuan1 (AUTHOR), Uddin Bhuiyan, A. F. M. Anhar1 (AUTHOR), Zhao, Hongping1,3 (AUTHOR), Arehart, Aaron R.1 (AUTHOR), Ringel, Steven A.1,3 (AUTHOR) ringel.5@osu.edu

    المصدر: Journal of Applied Physics. 1/28/2023, Vol. 133 Issue 4, p1-8. 8p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *POLAR effects (Chemistry), *IRRADIATION, *PROTONS, *CHEMICAL vapor deposition, *SCHOTTKY barrier diodes


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  11. 11
    Academic Journal
    Analysis on the defect states of FAxMA1−xPbI3 perovskite single crystals grown by inverse-temperature crystallization.

    المؤلفون: Lee, Kyoung Su1 (AUTHOR), Park, Dae Young2 (AUTHOR), Jeong, Mun Seok2 (AUTHOR) mjeong@hanyang.ac.kr, Kim, Eun Kyu1 (AUTHOR) ek-kim@hanyang.ac.kr

    المصدر: Applied Physics A: Materials Science & Processing. Jun2024, Vol. 130 Issue 6, p1-6. 6p.

    مصطلحات موضوعية: *SINGLE crystals, *DEEP level transient spectroscopy, *ANTISITE defects, *PEROVSKITE, *INTERSTITIAL defects


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  12. 12
    Academic Journal
    A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy.

    المؤلفون: Myers, Kenneth J.1 (AUTHOR) k.j.myers5579@gmail.com, Lenahan, Patrick M.2 (AUTHOR), Ashton, James P.3 (AUTHOR), Ryan, Jason T.4 (AUTHOR)

    المصدر: Journal of Applied Physics. 9/21/2022, Vol. 132 Issue 11, p1-9. 9p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *MAGNETIC resonance, *SEMICONDUCTOR defects, *SPIN-polarized currents, *DENSITY of states, *SEMICONDUCTOR devices, *METAL oxide semiconductor capacitors, *NUCLEAR magnetic resonance spectroscopy


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  13. 13
    Academic Journal
    Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in ZnO.

    المؤلفون: Müller, Raphael (AUTHOR) raphael.mueller@alumni.uni-ulm.del, Mangold, Martin (AUTHOR) martin.mangold95@web.de, Bauer, Sebastian (AUTHOR) sebastian.bauer@alumni.uni-ulm.de, Huber, Florian (AUTHOR) florian.huber@alumni.uni-ulm.de, Herr, Ulrich (AUTHOR) ulrich.herr@uni-ulm.de, Thonke, Klaus (AUTHOR) klaus.thonke@uni-ulm.de

    المصدر: Journal of Applied Physics. 8/14/2022, Vol. 132 Issue 6, p1-14. 14p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *ZINC oxide, *CHEMICAL vapor deposition


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  14. 14
    Academic Journal
    Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template.

    المؤلفون: Bassaler, Julien1 (AUTHOR) julien.bassaler@neel.cnrs.fr, Comyn, Rémi2 (AUTHOR), Bougerol, Catherine1 (AUTHOR), Cordier, Yvon2 (AUTHOR), Medjdoub, Farid3 (AUTHOR), Ferrandis, Philippe4 (AUTHOR)

    المصدر: Journal of Applied Physics. 3/28/2022, Vol. 131 Issue 12, p1-8. 8p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *TWO-dimensional electron gas, *ELECTRON mobility, *BREAKDOWN voltage, *SAPPHIRES


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  15. 15
    Academic Journal
    Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs.

    المؤلفون: Sobolev, M. M.1 (AUTHOR), Soldatenkov, F. Yu.1 (AUTHOR) f.soldatenkov@mail.ioffe.ru

    المصدر: Semiconductors. Apr2024, Vol. 58 Issue 4, p354-357. 4p.

    مصطلحات موضوعية: *LIQUID phase epitaxy, *DEEP level transient spectroscopy, *CAPACITANCE-voltage characteristics, *ACTIVATION energy, *HETEROSTRUCTURES


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  16. 16
    Academic Journal
    Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC.

    المؤلفون: Karsthof, Robert1 (AUTHOR) r.m.karsthof@smn.uio.no, Etzelmüller Bathen, Marianne1,2,3 (AUTHOR), Kuznetsov, Andrej3 (AUTHOR), Vines, Lasse3 (AUTHOR)

    المصدر: Journal of Applied Physics. 1/21/2022, Vol. 131 Issue 3, p1-7. 7p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *ION implantation


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  17. 17
    Academic Journal
    DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide.

    المؤلفون: Omotoso, Ezekiel, Igumbor, Emmanuel, Meyer, Walter E.

    المصدر: Journal of Materials Science: Materials in Electronics; Jan2025, Vol. 36 Issue 1, p1-11, 11p

    مصطلحات موضوعية: DEEP level transient spectroscopy, SCHOTTKY barrier diodes, RADIATION tolerance, HEAVY ions, ELECTRONIC equipment


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  18. 18
    Academic Journal
    1 GeV proton damage in β-Ga2O3.

    المؤلفون: Polyakov, A. Y.1 (AUTHOR), Shchemerov, I. V.1 (AUTHOR), Vasilev, A. A.1 (AUTHOR), Kochkova, A. I.1 (AUTHOR), Smirnov, N. B.1 (AUTHOR), Chernykh, A. V.1 (AUTHOR), Yakimov, E. B.1,2 (AUTHOR), Lagov, P. B.1,3 (AUTHOR), Pavlov, Yu. S.3 (AUTHOR), Ivanov, E. M.4 (AUTHOR), Gorbatkova, O. G.4 (AUTHOR), Drenin, A. S.5 (AUTHOR), Letovaltseva, M. E.6 (AUTHOR), Xian, Minghan7 (AUTHOR), Ren, Fan7 (AUTHOR), Kim, Jihyun8 (AUTHOR), Pearton, S. J.9 (AUTHOR) spear@mse.ufl.edu

    المصدر: Journal of Applied Physics. 11/14/2021, Vol. 130 Issue 18, p1-9. 9p.

    مصطلحات موضوعية: *ELECTRON traps, *DEEP level transient spectroscopy, *PROTONS, *OPTICAL spectroscopy, *ELECTRIC transients, *MONOCHROMATIC light


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  19. 19
    Academic Journal
    M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies.

    المؤلفون: Capan, I.1 (AUTHOR) ivana.capan@irb.hr, Brodar, T.1 (AUTHOR), Bernat, R.1 (AUTHOR), Pastuović, Ž.2 (AUTHOR), Makino, T.3 (AUTHOR), Ohshima, T.3 (AUTHOR), Gouveia, J. D.4 (AUTHOR), Coutinho, J.4 (AUTHOR)

    المصدر: Journal of Applied Physics. 9/28/2021, Vol. 130 Issue 12, p1-10. 10p.

    مصطلحات موضوعية: *DEEP level transient spectroscopy, *ION implantation, *ACTIVATION energy


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  20. 20
    Academic Journal
    Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction.

    المؤلفون: Labed, Madani1,2 (AUTHOR) madani@sejong.ac.kr, Alotaibi, Saud3,4 (AUTHOR), Min, Ji Young1,2 (AUTHOR), Almalki, Abdulaziz4,5 (AUTHOR), Henini, Mohamed4 (AUTHOR) Mohamed.Henini@nottingham.ac.uk, Rim, You Seung1,2 (AUTHOR) youseung@sejong.ac.kr

    المصدر: Applied Physics Letters. 12/18/2023, Vol. 123 Issue 25, p1-6. 6p.

    مصطلحات موضوعية: *ELECTRON traps, *DEEP level transient spectroscopy, *HETEROJUNCTIONS, *SCHOTTKY barrier diodes, *STRAY currents, *CONDUCTION bands


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