المؤلفون: Massabuau, F.C.-P., Davies, M.J., Oehler, F., Pamenter, S.K., Thrush, E.J., Kappers, M.J., Kovács, A., Williams, T., Hopkins, M.A., Humphreys, C.J., Dawson, P., Dunin-Borkowski, R.E., Etheridge, J., Allsopp, D.W.E., Oliver, R.A.

المصدر: Massabuau , FC-P , Davies , M J , Oehler , F , Pamenter , S K , Thrush , E J , Kappers , M J , Kovács , A , Williams , T , Hopkins , M A , Humphreys , C J , Dawson , P , Dunin-Borkowski , R E , Etheridge , J , Allsopp , D W E & Oliver , R A 2014 , ' The impact of trench defects in InGaN/GaN light emitting diodes and implications for the "green gap" problem ' , Applied Physics Letters , vol. 105 , no. ....

وصف الملف: application/pdf

Relation: https://researchportal.bath.ac.uk/en/publications/a3d4094f-7dd0-46fd-85c1-1d4e169a2a1f

الاتاحة: https://researchportal.bath.ac.uk/en/publications/a3d4094f-7dd0-46fd-85c1-1d4e169a2a1f
https://doi.org/10.1063/1.4896279
https://purehost.bath.ac.uk/ws/files/125248700/1.4896279.pdf

المؤلفون: Thrush, E.J., Gibbon, M.A., Stags, J.P., Cureton, C.G., Jones, C.J., Mallard, R.E., Norman, A.G., Booker, G.R.

المصدر: Sixth International Conference Metalorganic Vapor Phase Epitaxy ; page 106-106

الاتاحة: http://dx.doi.org/10.1109/movpe.1992.664963
http://xplorestaging.ieee.org/ielx4/5395/14590/00664963.pdf?arnumber=664963

المؤلفون: McAleese, C., Kappers, M.J., Rayment, F.D.G., Graham, D.M., Dawson, P., Thrush, E.J., Humphreys, C.J.

المساهمون: Università del Salento - Coordinamento SIBA

المصدر: EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy; EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy; 287-290

جغرافية الموضوع: Lecce, Italy

Time: Lecce, Italy

وصف الملف: application/pdf

Relation: http://siba-ese.unile.it/index.php/ewmovpex/article/view/7084

الاتاحة: http://siba-ese.unile.it/index.php/ewmovpex/article/view/7084
https://doi.org/10.1285/i9788883050088p287

المؤلفون: Van Der Stricht, W., Moerman, I., Demeester, P., Thrush, E.J., Crawley, J.A.

المصدر: 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C ; page 27-28

الاتاحة: http://dx.doi.org/10.1109/leosst.1997.619247
http://xplorestaging.ieee.org/ielx3/4873/13447/00619247.pdf?arnumber=619247

المؤلفون: Thrush, E.J., Glew, R.W., Greene, P.D., Gibbon, M.A., Armistead, C.J., Smith, A.D., Briggs, A.T.R., Scarrott, K., Czajkowski, I.K., Jones, C.J., Patel, B.L.

المصدر: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ; page 72-75

الاتاحة: http://dx.doi.org/10.1109/iciprm.1994.328163
http://xplorestaging.ieee.org/ielx2/1091/7763/00328163.pdf?arnumber=328163

المؤلفون: Thrush, E.J.

المصدر: LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings ; volume 2, page 92-93

الاتاحة: http://dx.doi.org/10.1109/leos.1995.484612
http://xplorestaging.ieee.org/ielx2/3480/10309/00484612.pdf?arnumber=484612

المؤلفون: Zhu, D., Kappers, M.J., McAleese, C., Graham, D.M., Chabrol, G.R., Hylton, N.P., Dawson, P., Thrush, E.J., Humphreys, C.J.

المصدر: Journal of Crystal Growth ; volume 298, page 504-507 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.155
https://api.elsevier.com/content/article/PII:S0022024806010451?httpAccept=text/xml
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المؤلفون: Dauelsberg, M., Martin, C., Protzmann, H., Boyd, A.R., Thrush, E.J., Käppeler, J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.

المصدر: Journal of Crystal Growth ; volume 298, page 418-424 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.046
https://api.elsevier.com/content/article/PII:S0022024806010219?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024806010219?httpAccept=text/plain

المؤلفون: Thrush, E.J., Stagg, J.P., Gibbon, M.A., Mallard, R.E., Hamilton, B., Jowett, J.M., Allen, E.M.

المصدر: European Materials Research Society Symposia Proceedings ; Semiconductor Materials for Optoelectronics and LTMBE Materials, PROCEEDINGS OF SYMPOSIUM A ON SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS AND PHOTONICS AND SYMPOSIUM B ON LOW TEMPERATURE MOLECULAR BEAM EPITAXIAL III–V MATERIALS: PHYSICS AND APPLICATIONS OF THE 1993 E-MRS SPRING CONFERENCE ; page 130-146 ; ISSN 0927-5002

الاتاحة: http://dx.doi.org/10.1016/b978-0-444-81769-3.50010-3

المؤلفون: Thrush, E.J., Kappers, M.J., Dawson, P., Vickers, M.E., Barnard, J., Graham, D., Makaronidis, G., Rayment, F.D.G., Considine, L., Humphreys, C.J.

المصدر: Journal of Crystal Growth ; volume 248, page 518-522 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/s0022-0248(02)01929-2
https://api.elsevier.com/content/article/PII:S0022024802019292?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024802019292?httpAccept=text/plain

المؤلفون: Thrush, E.J., Kappers, M.J., Dawson, P., Graham, D., Barnard, J.S., Vickers, M.E., Considine, L., Mullins, J.T., Humphreys, C.J.

المصدر: physica status solidi (a) ; volume 192, issue 2, page 354-359 ; ISSN 0031-8965 1521-396X

الاتاحة: http://dx.doi.org/10.1002/1521-396x(200208)192:2%3C354::aid-pssa354%3E3.0.co%3B2-i
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F1521-396X(200208)192:2%3C354::AID-PSSA354%3E3.0.CO%3B2-I
https://onlinelibrary.wiley.com/doi/full/10.1002/1521-396X(200208)192:2%3C354::AID-PSSA354%3E3.0.CO%3B2-I

المؤلفون: Bougrioua, Z., Moerman, I., Sharma, N., Wallis, R.H., Cheyns, J., Jacobs, K., Thrush, E.J., Considine, L., Beanland, R., Farvacque, J.-L., Humphreys, C.

المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université de Lille, Sciences et Technologies

المصدر: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-02906506 ; Journal of Crystal Growth, 2001, 230 (3-4), pp.573-578. ⟨10.1016/S0022-0248(01)01303-3⟩.

مصطلحات موضوعية: [PHYS]Physics [physics]

Relation: hal-02906506; https://hal.science/hal-02906506

الاتاحة: https://hal.science/hal-02906506
https://doi.org/10.1016/S0022-0248(01)01303-3

المؤلفون: Stafford, A, Irvine, S.J.C, Bougrioua, Z., Jacobs, K., Moerman, I, Thrush, E.J, Considine, L

المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

المصدر: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-02906485 ; Journal of Crystal Growth, 2000, 221 (1-4), pp.142-148. ⟨10.1016/S0022-0248(00)00674-6⟩.

مصطلحات موضوعية: [PHYS]Physics [physics]

Relation: hal-02906485; https://hal.science/hal-02906485

الاتاحة: https://hal.science/hal-02906485
https://doi.org/10.1016/S0022-0248(00)00674-6

المؤلفون: Pawlowski, R.P, Theodoropoulos, C, Salinger, A.G, Mountziaris, T.J, Moffat, H.K, Shadid, J.N, Thrush, E.J

المصدر: Journal of Crystal Growth ; volume 221, issue 1-4, page 622-628 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/s0022-0248(00)00789-2
https://api.elsevier.com/content/article/PII:S0022024800007892?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024800007892?httpAccept=text/plain

المؤلفون: Bougrioua, Z., Farvacque, J.-L., Moerman, I., Demeester, P., Harris, J.J., Lee, K., van Tendeloo, G., Lebedev, O., Thrush, E.J.

المصدر: physica status solidi (b) ; volume 216, issue 1, page 571-576 ; ISSN 0370-1972 1521-3951

الاتاحة: http://dx.doi.org/10.1002/(sici)1521-3951(199911)216:1%3C571::aid-pssb571%3E3.0.co%3B2-k
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F(SICI)1521-3951(199911)216:1%3C571::AID-PSSB571%3E3.0.CO%3B2-K
https://onlinelibrary.wiley.com/doi/full/10.1002/(SICI)1521-3951(199911)216:1%3C571::AID-PSSB571%3E3.0.CO%3B2-K

المؤلفون: Duxbury, N., Dawson, P., Bangert, U., Thrush, E.J., van der Stricht, W., Jacobs, K., Moerman, I.

المصدر: physica status solidi (b) ; volume 216, issue 1, page 355-359 ; ISSN 0370-1972 1521-3951

الاتاحة: http://dx.doi.org/10.1002/(sici)1521-3951(199911)216:1%3C355::aid-pssb355%3E3.0.co%3B2-k
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F(SICI)1521-3951(199911)216:1%3C355::AID-PSSB355%3E3.0.CO%3B2-K
https://onlinelibrary.wiley.com/doi/full/10.1002/(SICI)1521-3951(199911)216:1%3C355::AID-PSSB355%3E3.0.CO%3B2-K

المؤلفون: Harris, J.J., Lee, K.J., Harrison, I., Flannery, L.B., Korakakis, D., Cheng, T.S., Foxon, C.T., Bougrioua, Z., Moerman, I., Van der Stricht, W., Thrush, E.J., Hamilton, B., Ferhah, K.

المصدر: physica status solidi (a) ; volume 176, issue 1, page 363-367 ; ISSN 0031-8965 1521-396X

الاتاحة: http://dx.doi.org/10.1002/(sici)1521-396x(199911)176:1%3C363::aid-pssa363%3E3.3.co%3B2-d
http://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F(SICI)1521-396X(199911)176:1%3C363::AID-PSSA363%3E3.3.CO%3B2-D

المؤلفون: Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J.A, Thrush, E.J.

المصدر: Journal of Crystal Growth ; volume 170, issue 1-4, page 344-348 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/s0022-0248(96)00595-7
https://api.elsevier.com/content/article/PII:S0022024896005957?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024896005957?httpAccept=text/plain

المؤلفون: Zhang, X., Moerman, I., Sys, C., Demeester, P., Crawley, J.A., Thrush, E.J.

المصدر: Journal of Crystal Growth ; volume 170, issue 1-4, page 83-87 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/s0022-0248(96)00603-3
https://api.elsevier.com/content/article/PII:S0022024896006033?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024896006033?httpAccept=text/plain

المؤلفون: Van Der Stricht, W., Moerman, I., Demeester, P., Crawley, J.A, Thrush, E.J., Middleton, P.G., Trager Cowan, C., O'donnell, K.P.

المصدر: MRS Proceedings ; volume 395 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-395-231
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400379829