المؤلفون: Thomas, Stuart R.

Thesis Advisors: Anthopoulos, Thomas D.

مصطلحات موضوعية: 530

الاتاحة: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.646916

المؤلفون: Thomas, Stuart R.

المساهمون: Anthopoulos, Thomas D.

مصطلحات موضوعية: 530

URL الوصول: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.646916

المؤلفون: Sarris, Jerome, Byrne, Gerard J, Bousman, Chad A, Cribb, Lachlan, Savage, Karen M, Holmes, Oliver, Murphy, Jenifer, Macdonald, Patricia, Short, Anika, Nazareth, Sonia, Jennings, Emma, Thomas, Stuart R, Ogden, Edward, Chamoli, Suneel, Scholey, Andrew, Stough, Con

المساهمون: National Health and Medical Research Council

المصدر: Australian & New Zealand Journal of Psychiatry ; volume 54, issue 3, page 288-297 ; ISSN 0004-8674 1440-1614

الاتاحة: https://doi.org/10.1177/0004867419891246
http://journals.sagepub.com/doi/pdf/10.1177/0004867419891246
http://journals.sagepub.com/doi/full-xml/10.1177/0004867419891246

المؤلفون: Tsai, Hung-Wei, Chen, Chia-Wei, Thomas, Stuart R., Hsu, Cheng-Hung, Tsai, Wen-Chi, Chen, Yu-Ze, Wang, Yi-Chung, Wang, Zhiming M., Hong, Hwen-Fen, Chueh, Yu-Lun

المصدر: Scientific Reports ; volume 6, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/srep19102
https://www.nature.com/articles/srep19102.pdf
https://www.nature.com/articles/srep19102

المؤلفون: Sarris, Jerome, Byrne, Gerard J., Bousman, Chad A., Cribb, Lachlan, Savage, Karen M., Holmes, Oliver, Murphy, Jenifer, Macdonald, Patricia, Short, Anika, Nazareth, Sonia, Jennings, Emma, Thomas, Stuart R., Ogden, Edward, Chamoli, Suneel, Scholey, Andrew, Stough, Con

المساهمون: Swinburne University of Technology

المصدر: Australian & New Zealand Journal of Psychiatry, Vol. 54, no. 3 (Mar 2020), pp. 288-297

مصطلحات موضوعية: psy, envir

Relation: http://hdl.handle.net/1959.3/453474

الاتاحة: http://hdl.handle.net/1959.3/453474

المؤلفون: Chen, Chia‐Wei, Chen, Yi‐Ju, Thomas, Stuart R., Yen, Yu‐Ting, Cheng, Lung‐Teng, Wang, Yi‐Chung, Su, Teng‐Yu, Lin, Hao, Hsu, Cheng‐Hung, Ho, Johnny C., Hsieh, Tung‐Po, Chueh, Yu‐Lun

المساهمون: Ministry of Science and Technology

المصدر: Solar RRL ; volume 3, issue 5 ; ISSN 2367-198X 2367-198X

الاتاحة: http://dx.doi.org/10.1002/solr.201800343
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fsolr.201800343
https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.201800343
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/solr.201800343

المؤلفون: Medina, Henry, Li, Jian-Guang, Su, Teng-Yu, Lan, Yann-Wen, Lee, Shao-Hsin, Chen, Chia-Wei, Chen, Yu-Ze, Manikandan, Arumugam, Tsai, Shin-Hung, Navabi, Aryan, Zhu, Xiaodan, Shih, Yu-Chuan, Lin, Wei-Sheng, Yang, Jian-Hua, Thomas, Stuart R., Wu, Bo-Wei, Shen, Chang-Hong, Shieh, Jia-Min, Lin, Heh-Nan, Javey, Ali, Wang, Kang L., Chueh, Yu-Lun

المساهمون: National Tsing Hua University, Ministry of Science and Technology, Taiwan

المصدر: Chemistry of Materials ; volume 29, issue 4, page 1587-1598 ; ISSN 0897-4756 1520-5002

الاتاحة: http://dx.doi.org/10.1021/acs.chemmater.6b04467
https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.6b04467

المؤلفون: Lin, Yen Hung, Thomas, Stuart R., Faber, Hendrik, Li, Ruipeng, McLachlan, Martyn A., Patsalas, Panos A., Anthopoulos, Thomas D.

مصطلحات موضوعية: Aluminum doping, Solution processing, Thin-film transistors, Transparent electronics, Zinc oxide

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-119143; Advanced Electronic Materials, v. 2, (6), June 2016, article number 1600070; https://doi.org/10.1002/aelm.201600070; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=2199-160X&rft.volume=2&rft.issue=6&rft.date=2016&rft.spage=&rft.aulast=Lin&rft.aufirst=Y&rft.atitle=Al-Doped+ZnO+Transistors+Processed+from+Solution+at+120+%C2%B0C&rft.title=Advanced+Electronic+Materials; http://www.scopus.com/record/display.url?eid=2-s2.0-84975078692&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000379912100010

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-119143
https://doi.org/10.1002/aelm.201600070
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=2199-160X&rft.volume=2&rft.issue=6&rft.date=2016&rft.spage=&rft.aulast=Lin&rft.aufirst=Y&rft.atitle=Al-Doped+ZnO+Transistors+Processed+from+Solution+at+120+%C2%B0C&rft.title=Advanced+Electronic+Materials
http://www.scopus.com/record/display.url?eid=2-s2.0-84975078692&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000379912100010

المؤلفون: Tsai, Wen-Chi, Thomas, Stuart R., Hsu, Cheng-Hung, Huang, Yu-Chen, Tseng, Jiun-Yi, Wu, Tsung-Ta, Chang, Chia-ho, Wang, Zhiming M., Shieh, Jia-Min, Shen, Chang-Hong, Chueh, Yu-Lun

المصدر: Journal of Materials Chemistry A ; volume 4, issue 18, page 6980-6988 ; ISSN 2050-7488 2050-7496

الاتاحة: http://dx.doi.org/10.1039/c5ta09000h
http://pubs.rsc.org/en/content/articlepdf/2016/TA/C5TA09000H

المؤلفون: Tseng, Kuan-Chun, Yen, Yu-Ting, Thomas, Stuart R., Tsai, Hung-Wei, Hsu, Cheng-Hung, Tsai, Wen-Chi, Shen, Chang-Hong, Shieh, Jia-Min, Wang, Zhiming M., Chueh, Yu-Lun

المصدر: Nanoscale ; volume 8, issue 9, page 5181-5188 ; ISSN 2040-3364 2040-3372

الاتاحة: http://dx.doi.org/10.1039/c5nr07008b
http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR07008B

المؤلفون: Thomas, Stuart R., Chen, Chia-Wei, Date, Manisha, Wang, Yi-Chung, Tsai, Hung-Wei, Wang, Zhiming M., Chueh, Yu-Lun

المساهمون: Ministry of Science and Technology

المصدر: RSC Advances ; volume 6, issue 65, page 60643-60656 ; ISSN 2046-2069

الاتاحة: http://dx.doi.org/10.1039/c6ra05502h
http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA05502H

المؤلفون: Tsai, Hung-Wei, Thomas, Stuart R., Chen, Chia-Wei, Wang, Yi-Chung, Tsai, Hsu-Sheng, Yen, Yu-Ting, Hsu, Cheng-Hung, Tsai, Wen-Chi, Wang, Zhiming M., Chueh, Yu-Lun

المساهمون: National Tsing Hua University, Ministry of Science and Technology, Taiwan

المصدر: ACS Applied Materials & Interfaces ; volume 8, issue 12, page 7777-7782 ; ISSN 1944-8244 1944-8252

الاتاحة: http://dx.doi.org/10.1021/acsami.5b11863
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b11863

المؤلفون: Faber, Hendrik, Lin, Yen Hung, Thomas, Stuart R., Zhao, Kui, Pliatsikas, Nikos, McLachlan, Martyn A., Amassian, Aram, Patsalas, Panos A., Anthopoulos, Thomas D.

مصطلحات موضوعية: Metal oxide, Plastic electronics, Spray pyrolysis, Thin-film transistors

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-119154; ACS Applied Materials and Interfaces, v. 7, (1), January 2015, p. 782-790; https://doi.org/10.1021/am5072139; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1944-8244&rft.volume=7&rft.issue=1&rft.date=2015&rft.spage=782&rft.aulast=Faber&rft.aufirst=H.&rft.atitle=Indium+oxide+thin-film+transistors+processed+at+low+temperature+via+ultrasonic+spray+pyrolysis&rft.title=ACS+Applied+Materials+and+Interfaces; http://www.scopus.com/record/display.url?eid=2-s2.0-84921263449&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000348085200093

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-119154
https://doi.org/10.1021/am5072139
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1944-8244&rft.volume=7&rft.issue=1&rft.date=2015&rft.spage=782&rft.aulast=Faber&rft.aufirst=H.&rft.atitle=Indium+oxide+thin-film+transistors+processed+at+low+temperature+via+ultrasonic+spray+pyrolysis&rft.title=ACS+Applied+Materials+and+Interfaces
http://www.scopus.com/record/display.url?eid=2-s2.0-84921263449&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000348085200093

المؤلفون: Labram, John G., Lin, Yen Hung, Zhao, Kui, Li, Ruipeng, Thomas, Stuart R., Semple, James, Androulidaki, Maria, Sygellou, Lamprini, McLachlan, Martyn, Stratakis, Emmanuel, Amassian, Aram, Anthopoulos, Thomas D.

مصطلحات موضوعية: Energy quantization, Resonant tunneling diodes, Semiconducting oxides, Solution-processed semiconductors, Zinc oxide

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-119153; Advanced Functional Materials, v. 25, (11), March 2015, p. 1727-1736; https://doi.org/10.1002/adfm.201403862; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1616-301X&rft.volume=25&rft.issue=11&rft.date=2015&rft.spage=1727&rft.aulast=Labram&rft.aufirst=J.G.&rft.atitle=Signatures+of+Quantized+Energy+States+in+Solution-Processed+Ultrathin+Layers+of+Metal-Oxide+Semiconductors+and+Their+Devices&rft.title=Advanced+Functional+Materials; http://www.scopus.com/record/display.url?eid=2-s2.0-85027954494&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000351214000012

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-119153
https://doi.org/10.1002/adfm.201403862
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1616-301X&rft.volume=25&rft.issue=11&rft.date=2015&rft.spage=1727&rft.aulast=Labram&rft.aufirst=J.G.&rft.atitle=Signatures+of+Quantized+Energy+States+in+Solution-Processed+Ultrathin+Layers+of+Metal-Oxide+Semiconductors+and+Their+Devices&rft.title=Advanced+Functional+Materials
http://www.scopus.com/record/display.url?eid=2-s2.0-85027954494&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000351214000012

المؤلفون: Thomas, Stuart R., Adamopoulos, George, Lin, Yen Hung, Faber, Hendrik, Sygellou, Labrini, Stratakis, Emmanuel, Pliatsikas, Nikos, Patsalas, Panos A., Anthopoulos, Thomas D.

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-119156; Applied Physics Letters, v. 105, (9), September 2014, article number 092105; https://doi.org/10.1063/1.4894643; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=105&rft.issue=9&rft.date=2014&rft.spage=&rft.aulast=Thomas&rft.aufirst=&rft.atitle=High+electron+mobility+thin-film+transistors+based+on+Ga2O3grown+by+atmospheric+ultrasonic+spray+pyrolysis+at+low+temperatures&rft.title=Applied+Physics+Letters; http://www.scopus.com/record/display.url?eid=2-s2.0-84907012628&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000342749800023

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-119156
https://doi.org/10.1063/1.4894643
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=105&rft.issue=9&rft.date=2014&rft.spage=&rft.aulast=Thomas&rft.aufirst=&rft.atitle=High+electron+mobility+thin-film+transistors+based+on+Ga2O3grown+by+atmospheric+ultrasonic+spray+pyrolysis+at+low+temperatures&rft.title=Applied+Physics+Letters
http://www.scopus.com/record/display.url?eid=2-s2.0-84907012628&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000342749800023

المؤلفون: Thomas, Stuart R., Pattanasattayavong, Pichaya, Anthopoulos, Thomas D.

المصدر: ChemInform ; volume 44, issue 41 ; ISSN 0931-7597 1522-2667

الاتاحة: http://dx.doi.org/10.1002/chin.201341218
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fchin.201341218
https://onlinelibrary.wiley.com/doi/pdf/10.1002/chin.201341218

المؤلفون: Thomas, Stuart R., Pattanasattayavong, Pichaya, Anthopoulos, Thomas D.

المصدر: Chemical Society Reviews ; volume 42, issue 16, page 6910 ; ISSN 0306-0012 1460-4744

الاتاحة: http://dx.doi.org/10.1039/c3cs35402d
http://pubs.rsc.org/en/content/articlepdf/2013/CS/C3CS35402D

المؤلفون: Thomas, Stuart R., Adamopoulos, George, Lin, Yen-hung, Faber, Hendrik, Sygellou, Labrini, Stratakis, Emmanuel, Pliatsikas, Nikos, Patsalas, Panos A., Anthopoulos, Thomas D.

مصطلحات الفهرس: Journal Article, PeerReviewed

URL: https://doi.org/10.1063/1.4894643
https://eprints.lancs.ac.uk/id/eprint/70705/
https://eprints.lancs.ac.uk/id/eprint/70705
https://doi.org/10.1063/1.4894643

المؤلفون: Medina, Henry, Jian-Guang Li, Teng-Yu Su, Yann-Wen Lan, Shao-Hsin Lee, Chia-Wei Chen, Yu-Ze Chen, Manikandan, Arumugam, Shin-Hung Tsai, Navabi, Aryan, Xiaodan Zhu, Yu-Chuan Shih, Wei-Sheng Lin, Jian-Hua Yang, Thomas, Stuart R., Bo-Wei Wu, Chang-Hong Shen, Jia-Min Shieh, Heh-Nan Lin, Javey, Ali

المصدر: Chemistry of Materials; 2/28/2017, Vol. 29 Issue 4, p1587-1598, 12p

المؤلفون: Huang, Yu-Chen, Tseng, Jiun-Yi, Chueh, Yu-Lun, Tsai, Wen-Chi, Hsu, Cheng-Hung, Wu, Tsung-Ta, Thomas, Stuart R., Chang, Chia-ho, Shieh, Jia-Min, Shen, Chang-Hong, Wang, Zhiming M.

المصدر: Journal of Materials Chemistry A; 5/14/2016, Vol. 4 Issue 18, p6980-6988, 9p