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1Academic Journal
المؤلفون: Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May
مصطلحات موضوعية: Breakdown voltage, Cleaning, Dielectrics, Fabrication, Gallium nitride, Interface charge, Logic gates, MOSFET, Performance evaluation, Thick bottom dielectric, Vertical trench MOSFET
Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-115719; IEEE Electron Device Letters, v. 43, (3), March 2022, article number 9691320, p. 346-349; https://doi.org/10.1109/LED.2022.3146276; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Enhancing+ON-+and+OFF-State+Performance+of+Quasi-Vertical+GaN+Trench+MOSFETs+on+Sapphire+with+Reduced+Interface+Charges+and+a+Thick+Bottom+Dielectric&rft.title=IEEE+Electron+Device+Letters; http://www.scopus.com/record/display.url?eid=2-s2.0-85123716340&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000761656500006
الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-115719
https://doi.org/10.1109/LED.2022.3146276
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Enhancing+ON-+and+OFF-State+Performance+of+Quasi-Vertical+GaN+Trench+MOSFETs+on+Sapphire+with+Reduced+Interface+Charges+and+a+Thick+Bottom+Dielectric&rft.title=IEEE+Electron+Device+Letters
http://www.scopus.com/record/display.url?eid=2-s2.0-85123716340&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000761656500006 -
2Academic Journal
المؤلفون: Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May
مصطلحات موضوعية: Breakdown voltage, Cleaning, Dielectrics, Fabrication, Gallium nitride, Interface charge, Logic gates, MOSFET, Performance evaluation, Thick bottom dielectric, Vertical trench MOSFET
Relation: http://repository.ust.hk/ir/Record/1783.1-115719; IEEE Electron Device Letters, v. 43, (3), March 2022, p. 346-349; https://doi.org/10.1109/LED.2022.3146276; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Enhancing+ON-+and+OFF-State+Performance+of+Quasi-Vertical+GaN+Trench+MOSFETs+on+Sapphire+with+Reduced+Interface+Charges+and+a+Thick+Bottom+Dielectric&rft.title=IEEE+Electron+Device+Letters; http://www.scopus.com/record/display.url?eid=2-s2.0-85123716340&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000761656500006
الاتاحة: http://repository.ust.hk/ir/Record/1783.1-115719
https://doi.org/10.1109/LED.2022.3146276
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Enhancing+ON-+and+OFF-State+Performance+of+Quasi-Vertical+GaN+Trench+MOSFETs+on+Sapphire+with+Reduced+Interface+Charges+and+a+Thick+Bottom+Dielectric&rft.title=IEEE+Electron+Device+Letters
http://www.scopus.com/record/display.url?eid=2-s2.0-85123716340&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000761656500006