يعرض 1 - 20 نتائج من 26 نتيجة بحث عن '"Thibauld Cazimajou"', وقت الاستعلام: 0.49s تنقيح النتائج
  1. 1
    Academic Journal
    Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology

    المؤلفون: Shaochen Gao, Duc-Tung Vu, Thibauld Cazimajou, Patrick Pittet, Martine Le Berre, Mohammadreza Dolatpoor Lakeh, Fabien Mandorlo, Régis Orobtchouk, Jean-Baptiste Schell, Jean-Baptiste Kammerer, Andreia Cathelin, Dominique Golanski, Wilfried Uhring, Francis Calmon

    المصدر: Photonics, Vol 11, Iss 6, p 526 (2024)

    مصطلحات موضوعية: single-photon avalanche diode (SPAD), fully depleted silicon-on-insulator (FD-SOI), shallow trench isolation (STI), photon detection probability (PDP), constructive interferences, electrical–optical simulation, Applied optics. Photonics, TA1501-1820

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2304-6732/11/6/526; https://doaj.org/toc/2304-6732

    URL الوصول: https://doaj.org/article/ac80468040404a60aef0d5871a92f1c9

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  2. 2
    Academic Journal
    Quenching Statistics of Silicon Single Photon Avalanche Diodes

    المؤلفون: Thibauld Cazimajou, Marco Pala, Jerome Saint-Martin, Remi Helleboid, Jeremy Grebot, Denis Rideau, Philippe Dollfus

    المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1098-1102 (2021)

    مصطلحات موضوعية: Avalanche breakdown, Monte Carlo methods, avalanche photodiodes, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/9610136/; https://doaj.org/toc/2168-6734

    URL الوصول: https://doaj.org/article/4f43bde47a5d4c2a88d31a2dd2793d90

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  3. 3
    Academic Journal
    On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors

    المؤلفون: Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Mireille Mouis, Bassem Salem, Valérie Stambouli, Céline Ternon

    المصدر: Proceedings, Vol 1, Iss 4, p 312 (2017)

    مصطلحات موضوعية: silicon nanowires, nanonets, field-effect transistors, electrical characteristics, DNA sensor, label-free detection, functionalization, GOPS, hybridization, General Works

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2504-3900/1/4/312; https://doaj.org/toc/2504-3900

    URL الوصول: https://doaj.org/article/ef0bcb77238e4f6d816427d120104cd4

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  4. 4
    Transient Thermal 2D FEM Analysis of SiC Mosfet in Short-Circuit Operation Including Solidus-Liquidus Phase Transition of the Aluminum Source Electrode

    المؤلفون: Emmanuel Sarraute, Thibauld Cazimajou, Frédéric Richardeau

    المصدر: 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e1827a1237d8a767c3f865eee7cdd7ca
    https://doi.org/10.1109/eurosime56861.2023.10100775

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  5. 5
    Indoor Optical Wireless Communication Coverage Optimization Using a SiPM Photoreceiver

    المؤلفون: Bastien Béchadergue, Thibauld Cazimajou, Fabien Mandorlo, Francis Calmon

    المصدر: 2023 IEEE Wireless Communications and Networking Conference (WCNC).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::57968a25c53e0a25cfea056c424cc1b2
    https://doi.org/10.1109/wcnc55385.2023.10118956

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  6. 6
    Quenching Statistics of Silicon Single Photon Avalanche Diodes

    المؤلفون: Remi Helleboid, Philippe Dollfus, Jeremy Grebot, Thibauld Cazimajou, Jérôme Saint-Martin, Denis Rideau, Marco G. Pala

    المساهمون: Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

    المصدر: IEEE Journal of the Electron Devices Society
    IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3127013⟩
    IEEE Journal of the Electron Devices Society, Vol 9, Pp 1098-1102 (2021)

    مصطلحات موضوعية: Physics, Quenching, Coupling, Photon, Silicon, Physics::Instrumentation and Detectors, Monte Carlo method, chemistry.chemical_element, Photodetector, Monte Carlo methods, Avalanche breakdown, TK1-9971, Electronic, Optical and Magnetic Materials, Computational physics, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Electrical engineering. Electronics. Nuclear engineering, avalanche photodiodes, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Biotechnology, Diode

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e5c691a3ea326e779a54edfd9f33e5b
    https://hal.archives-ouvertes.fr/hal-03439663

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  7. 7
    Role played by the nanowire/nanowire junctions in the electrical properties of semiconductor percolating silicon nanowire networks

    المؤلفون: Mireille Mouis, Céline Ternon, Thibauld Cazimajou, T. Arjmand, Thi Thu Thuy Nguyen, Bassem Salem, Maxime Legallais

    المساهمون: Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), ANR-16-PILO-0003,Convergence,Frictionless Energy Efficient Convergent Wearables For Healthcare and Lifestyle Applications(2016), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016)

    المصدر: Journal of Applied Physics
    Journal of Applied Physics, 2020, 128 (20), pp.204501. ⟨10.1063/5.0023322⟩
    Journal of Applied Physics, American Institute of Physics, 2020, 128 (20), pp.204501. ⟨10.1063/5.0023322⟩

    مصطلحات موضوعية: Materials science, Silicon, Nanowire, General Physics and Astronomy, Field effect, chemistry.chemical_element, 02 engineering and technology, engineering.material, 01 natural sciences, law.invention, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, Subthreshold slope, Semiconductor, Polycrystalline silicon, chemistry, Percolation, engineering, Optoelectronics, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b7b6434883955b38ac5f0b9eb83c308
    https://hal.science/hal-03024377

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  8. 8
    Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices

    المؤلفون: Thibauld Cazimajou, Céline Ternon, Thi Thu Thuy Nguyen, Maxime Legallais, Bassem Salem, Mireille Mouis

    المساهمون: Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Materials Chemistry and Physics
    Materials Chemistry and Physics, 2019, 238, pp.121871. ⟨10.1016/j.matchemphys.2019.121871⟩
    Materials Chemistry and Physics, Elsevier, 2019, 238, pp.121871. ⟨10.1016/j.matchemphys.2019.121871⟩

    مصطلحات موضوعية: Materials science, Fabrication, business.industry, Transistor, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Flexible electronics, 0104 chemical sciences, law.invention, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, General Materials Science, Field-effect transistor, Electronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Silicon nanowires, business, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5cd96ad3334558536304eee8d8226cc4
    https://hal.univ-grenoble-alpes.fr/hal-02332991/document

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  9. 9
    Analysis of the Role of Inter-Nanowire Junctions on Current Percolation Effects in Silicon Nanonet Field-Effect Transistors

    المؤلفون: Céline Ternon, Gerard Ghibaudo, Mireille Mouis, Thibauld Cazimajou, Maxime Legallais, Bassem Salem, Thi Thu Thuy Nguyen

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)

    المصدر: Solid-State Electronics
    Solid-State Electronics, Elsevier, 2019, pp.107725. ⟨10.1016/j.sse.2019.107725⟩
    Solid-State Electronics, 2020, pp.107725. ⟨10.1016/j.sse.2019.107725⟩

    مصطلحات موضوعية: Materials science, Silicon, Nanowire, chemistry.chemical_element, 02 engineering and technology, Activation energy, 01 natural sciences, law.invention, law, Condensed Matter::Superconductivity, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Resistive touchscreen, Condensed matter physics, Transistor, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry, Percolation, Field-effect transistor, 0210 nano-technology

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7fe515460e94092cf58a67bd7e8b27a
    https://hal.univ-grenoble-alpes.fr/hal-02380107

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  10. 10
    Low-frequency Noise Characterization of Si Nanonet Field Effect Transistors

    المؤلفون: Thibauld Cazimajou, Christoforos Theodorou, Thuy Thi Thu Nguyen, Maxime Legallais, Mireille Mouis, Céline Ternon, gerard ghibaudo

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Mouis, Mireille, Nanonets2Sense - Nanonets2Sense - - H20202016-02-01 - 2019-01-31 - 688329 - VALID

    المصدر: Free conference proceedings (with 4-page abstracts) available at https://icnf2019.epfl.ch/wp-content/uploads/2019/10/ICNF2019_Proceedings.pdf
    25th International Conference on Noise and Fluctuations (ICNF)
    25th International Conference on Noise and Fluctuations (ICNF), Jun 2019, Neuchâtel, Switzerland. Actes pp. 180-183
    HAL

    مصطلحات موضوعية: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::df5baf945c84603ae5b9775787ee9c51
    https://hal.univ-grenoble-alpes.fr/hal-02400620

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  11. 11
    Low Temperature Electrical Characteristics of Si Nanonet Field-Effect Transistors

    المؤلفون: Thibauld Cazimajou, Thuy Thi Thu Nguyen, Maxime Legallais, Mireille Mouis, Céline Ternon, gerard ghibaudo

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Mouis, Mireille, Nanonets2Sense - Nanonets2Sense - - H20202016-02-01 - 2019-01-31 - 688329 - VALID, Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: 2019 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
    2019 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Apr 2019, Grenoble, France. Actes pp. 132-133
    HAL

    مصطلحات موضوعية: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ed91c7e11604bcd2fa231fa0d1295c80
    https://hal.univ-grenoble-alpes.fr/hal-02400540

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  12. 12
    Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors

    المؤلفون: Mireille Mouis, Céline Ternon, Thibauld Cazimajou, Bassem Salem, Maxime Legallais, Gerard Ghibaudo, Thi Thu Thuy Nguyen

    المصدر: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

    مصطلحات موضوعية: 010302 applied physics, Materials science, Field (physics), Silicon, business.industry, Transistor, Nanowire, chemistry.chemical_element, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Subthreshold slope, law.invention, Threshold voltage, symbols.namesake, chemistry, law, Lambert W function, 0103 physical sciences, symbols, Optoelectronics, Field-effect transistor, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f3a193696658110868a340609840fe0c
    https://doi.org/10.1109/eurosoi-ulis45800.2019.9041882

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  13. 13
    Potential of nanonets for the 3D integration of biosensors on CMOS (invited)

    المؤلفون: Mireille Mouis, Maxime Legallais, Thibauld Cazimajou, Fanny Morisot, Thuy Thi Thu Nguyen, Monica Vallejo Perez, Céline Ternon, Valerie Stambouli, gerard ghibaudo, Bassem Salem, Christoforos Theodorou, Irina Ionica, Ganesh Jayakumar, Per-Erik Hellstrom, Saul Rodriguez, Joachim Luque, Claudio Zuliani, Karl Rohracher, Kudlaty, J.

    المساهمون: Mouis, Mireille, Frictionless Energy Efficient Convergent Wearables For Healthcare and Lifestyle Applications - - Convergence2016 - ANR-16-PILO-0003 - Appel à projets transnationaux FLAG-ERA JTC - VALID, Nanonets2Sense - Nanonets2Sense - - H20202016-02-01 - 2019-01-31 - 688329 - VALID, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Royal Institute of Technology [Stockholm] (KTH ), ams Sensors UK ltd, Austria Mikro Systeme Int. AG, Austria (AMS), AMS - Austria Mikro Systeme Int. AG, ANR-16-PILO-0003,Convergence,Frictionless Energy Efficient Convergent Wearables For Healthcare and Lifestyle Applications(2016), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: HAL
    Journées Nationales Nanofils Semiconducteurs Journées Nationales Nanofils Semiconducteurs, Lyon, 13-15 Nov. 2019
    Journées Nationales Nanofils Semiconducteurs Journées Nationales Nanofils Semiconducteurs, Lyon, 13-15 Nov. 2019, Nov 2019, Lyon, France

    مصطلحات موضوعية: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a648198bedd15b49220648026f0f5f16
    https://hal.univ-grenoble-alpes.fr/hal-02400730

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  14. 14
    First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection

    المؤلفون: Céline Ternon, Thi Thu Thuy Nguyen, Thibauld Cazimajou, Bassem Salem, Maxime Legallais, Valérie Stambouli, Fanny Morisot, Mireille Mouis

    المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Materials Research Express
    Materials Research Express, 2019, 6 (1), pp.016301. ⟨10.1088/2053-1591/aae0d5⟩
    Materials Research Express, IOP Publishing Ltd, 2019, 6 (1), pp.016301. ⟨10.1088/2053-1591/aae0d5⟩
    BASE-Bielefeld Academic Search Engine

    مصطلحات موضوعية: Materials science, Polymers and Plastics, Nanowire, silicon nanonet, 02 engineering and technology, GOPS functionalization, 01 natural sciences, Biomaterials, 0103 physical sciences, Microelectronics, silicon nanowire, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Silicon nanowires, electrical characterizations, 010302 applied physics, DNA detection, [PHYS]Physics [physics], business.industry, field-effect transistors, semiconducting nanowire network, Metals and Alloys, 021001 nanoscience & nanotechnology, Single strand dna, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Dna detection, Modulation, Homogeneous, Optoelectronics, Field-effect transistor, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25e3c243f9d89fc564bfedd01b5017df
    https://hal.univ-grenoble-alpes.fr/hal-01947795/file/Nguyen_2019_Mater._Res._Express_6_016301.pdf

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  15. 15
    Characterization and modelling of nanonet-based field-effect transistors in the presence of percolating effects

    المؤلفون: Thibauld Cazimajou, Maxime Legallais, Thuy Thi Thu Nguyen, Mireille Mouis, Céline Ternon, Valerie Stambouli, gerard ghibaudo

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Nanoelectronics and Smart Systems Technologies for Future Applications (Joint SiNano-NEREID-Nanonets2Sense-Convergence Workshop at ESSDERC 2018)
    Nanoelectronics and Smart Systems Technologies for Future Applications (Joint SiNano-NEREID-Nanonets2Sense-Convergence Workshop at ESSDERC 2018), Sep 2018, Dresden, Germany
    HAL

    مصطلحات موضوعية: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::540b00f90b67025728719d22ffa40d9f
    https://hal.univ-grenoble-alpes.fr/hal-02401189

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  16. 16
    Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

    المؤلفون: Mireille Mouis, Céline Ternon, Maxime Legallais, Gerard Ghibaudo, Bassem Salem, Thibauld Cazimajou

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Solid-State Electronics
    Solid-State Electronics, Elsevier, 2018, 143, pp.83-89. ⟨10.1016/j.sse.2017.11.013⟩
    Solid-State Electronics, 2018, 143, pp.83-89. ⟨10.1016/j.sse.2017.11.013⟩

    مصطلحات موضوعية: Materials science, Silicon, Nanowire, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, Dispersion (optics), Materials Chemistry, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Nanonet, Electrical parameter extraction, business.industry, Transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Thermal conduction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Subthreshold slope, Electronic, Optical and Magnetic Materials, Threshold voltage, Threshold voltage dispersion, chemistry, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Silicon nanowire

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::513a1427f51b821a18cc7ba4dff3e63b
    https://hal.archives-ouvertes.fr/hal-01948032

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  17. 17
    Finite element simulation of 2D percolating silicon-nanonet field-effect transistor

    المؤلفون: Mireille Mouis, Thibauld Cazimajou, Gerard Ghibaudo

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016)

    المصدر: 2018 EUROSOI-ULIS Proceedings
    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.165-168, ⟨10.1109/ULIS.2018.8354760⟩

    مصطلحات موضوعية: Materials science, Silicon, Threshold Voltage Dispersion, Nanowire, chemistry.chemical_element, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, Lambert Function, law.invention, Finite Element Simulation, law, Random network, 0103 physical sciences, Dispersion (optics), Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Nanonet, 010302 applied physics, business.industry, Transistor, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Finite element method, Threshold voltage, chemistry, Logic gate, Optoelectronics, Field-effect transistor, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13352adb9466ea3cb93d192dc8871d0d
    https://doi.org/10.1109/ulis.2018.8354760

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  18. 18
    On the development of label-free DNA sensor using silicon nanonet field-effect transistors

    المؤلفون: Mireille Mouis, Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Bassem Salem, Céline Ternon, Valérie Stambouli

    المساهمون: Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Proceedings, EuroSENSORS 2017
    2017 EuroSENSORS
    2017 EuroSENSORS, Sep 2017, Paris, France. pp.312.1-5, ⟨10.3390/proceedings1040312⟩
    Proceedings, Vol 1, Iss 4, p 312 (2017)

    مصطلحات موضوعية: nanonets, Materials science, Silicon, Dna sensor, electrical characteristics, DNA sensor, GOPS, Nanowire, chemistry.chemical_element, lcsh:A, Nanotechnology, 02 engineering and technology, 01 natural sciences, law.invention, label-free detection, law, 0103 physical sciences, Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, hybridization, ComputingMilieux_MISCELLANEOUS, Label free, 010302 applied physics, [PHYS]Physics [physics], business.industry, field-effect transistors, Transistor, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, silicon nanowires, chemistry, functionalization, Surface modification, Field-effect transistor, ComputingMethodologies_GENERAL, lcsh:General Works, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99d2d5f7916a828002337080a600f9b4
    https://hal.univ-grenoble-alpes.fr/hal-01929242

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  19. 19
    Electrical characterization of percolating silicon nanonet FETs for sensing applications

    المؤلفون: Céline Ternon, Gerard Ghibaudo, Thibauld Cazimajou, Maxime Legallais, Mireille Mouis, Bassem Salem

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: 2017 EUROSOI-ULIS Proceedings
    2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
    2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.23-26, ⟨10.1109/ULIS.2017.7962591⟩

    مصطلحات موضوعية: Materials science, Silicon, Nanowire, chemistry.chemical_element, Nanotechnology, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, law.invention, symbols.namesake, law, Lambert W function, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS]Physics [physics], 010302 applied physics, business.industry, Transistor, Biasing, [CHIM.MATE]Chemical Sciences/Material chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Thermal conduction, Subthreshold slope, Threshold voltage, chemistry, symbols, Optoelectronics, 0210 nano-technology, business, Hardware_LOGICDESIGN

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2f051eeaf5b5ed31443658d7febf37f
    https://doi.org/10.1109/ulis.2017.7962591

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  20. 20
    Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets

    المؤلفون: Mireille Mouis, Thi Thu Thuy Nguyen, Bassem Salem, Thibauld Cazimajou, Maxime Legallais, T. Arjmand, Céline Ternon, Eric Robin, Viet Huong Nguyen

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), European Project: 688329,H2020,H2020-ICT-2015,Nanonets2Sense(2016), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Nano Futures
    Nano Futures, IOPScience, 2019, 3 (2), pp.025002. ⟨10.1088/2399-1984/ab1ebc⟩
    Nano Futures, 2019, 3 (2), pp.025002. ⟨10.1088/2399-1984/ab1ebc⟩

    مصطلحات موضوعية: Fabrication, Materials science, Scale (ratio), Silicon, Biomedical Engineering, chemistry.chemical_element, Bioengineering, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, Nano, Microelectronics, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Transistor, General Chemistry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, chemistry, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Macroelectronics

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::512751c18c9fbc13f8af1f8b2d6dd335
    https://doi.org/10.1088/2399-1984/ab1ebc

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