-
1Conference
المؤلفون: Piva, F, Fiorimonte, D, Trivellin, N, De Santi, C, Buffolo, M, Meneghesso, G, Zanoni, E, Meneghini, M
المساهمون: Piva, F, Fiorimonte, D, Trivellin, N, De Santi, C, Buffolo, M, Meneghesso, G, Zanoni, E, Meneghini, M
مصطلحات موضوعية: UV-C, LED, disinfection, thermal droop, parasitic band, reliability
Relation: info:eu-repo/semantics/altIdentifier/isbn/9781510648739; info:eu-repo/semantics/altIdentifier/isbn/9781510648746; info:eu-repo/semantics/altIdentifier/wos/WOS:000836321400011; ispartofbook:Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII; SPIE OPTO, 2022; volume:12001; firstpage:83; serie:PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING; http://hdl.handle.net/11577/3455438; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85131220265
-
2
المؤلفون: Joshua M. McMahon, Emmanouil Kioupakis, Stefan Schulz
المصدر: Physical Review B. 105
مصطلحات موضوعية: Atomistic theoretical study, Auger recombination, Radiative, Nonradiative, Competition, Indium (In), Temperature dependence, C-plane (In,Ga)N/GaN quantum wells, Thermal droop
وصف الملف: application/pdf
-
3Academic Journal
المؤلفون: McMahon, Joshua M., Kioupakis, Emmanouil, Schulz, Stefan
مصطلحات موضوعية: Atomistic theoretical study, Temperature dependence, Competition, Auger recombination, C-plane (In,Ga)N/GaN quantum wells, Radiative, Indium (In), Thermal droop, Nonradiative
وصف الملف: application/pdf
Relation: 195307; McMahon, J. M., Kioupakis, E. and Schulz, S. (2022) 'Atomistic analysis of Auger recombination in c -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination', Physical Review B, 105, 195307 (14pp). doi:10.1103/PhysRevB.105.195307; 14; Physical Review B; http://hdl.handle.net/10468/13187; 105
-
4
المؤلفون: Francesco Piva, Davide Fiorimonte, Nicola Trivellin, Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
مصطلحات موضوعية: reliability, UV-C, LEDs, disinfection, thermal droop, parasitic bands
-
5
المؤلفون: La Grassa, Marco
مصطلحات موضوعية: dlts, InGaN, LEDs, dlos, light-emitting-diode, Settore ING-INF/01 - Elettronica, defects, GaN, InGaN, LEDs, light-emitting-diode, defects, dlts, dlos, thermal droop, GaN, thermal droop
-
6
المؤلفون: Dominici, Stefano
مصطلحات موضوعية: GeSn, Auger recombination, Ge, InGaN, Radiative recombination, LED, Silicon photonics, Absorption coefficient, germanium-tin, Auger recombination, Radiative recombination, Absorption coefficient, Thermal droop, Ge, GeSn, germanium-tin, Silicon photonics, infrared optoelectronics, LED, InGaN, Settore ING-INF/01 - Elettronica, Thermal droop, infrared optoelectronics
-
7
المؤلفون: Stefano Dominici, Gaudenzio Meneghesso, M. Mandurrino, Roland Zeisel, Enrico Zanoni, C. De Santi, Francesco Bertazzi, Bastian Galler, Michele Goano, Nicola Trivellin, Matteo Meneghini, M. La Grassa, Berthold Hahn
مصطلحات موضوعية: Materials science, Phonon, Thermionic emission, Gallium nitride, 02 engineering and technology, Electron blocking layer, Light emitting diode, Indium gallium nitride, 01 natural sciences, Thermal droop, chemistry.chemical_compound, 0103 physical sciences, Voltage droop, Carrier escape, Shockley-Read-Hall recombination, Quantum well, Quantum tunnelling, Diode, 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, chemistry, Optoelectronics, 0210 nano-technology, business