يعرض 1 - 20 نتائج من 59 نتيجة بحث عن '"Tang, Y.T."', وقت الاستعلام: 0.52s تنقيح النتائج
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    Academic Journal

    المساهمون: Matériaux, ingénierie et science Villeurbanne (MATEIS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), European Synchrotron Radiation Facility Grenoble (ESRF)

    المصدر: ISSN: 1359-6462.

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    Academic Journal

    وصف الملف: application/pdf

    Relation: https://oro.open.ac.uk/82898/1/1-s2.0-S1005030222003577-main%20%281%29.pdf; Zhang, R.Y.; Qin, H.L.; Bi, Z.N.; Tang, Y.T.; Araujo de Oliveira, J. ; Lee, T.L.; Panwisawas, C.; Zhang, S.Y.; Zhang, J.; Li, J. and Dong, H.B. (2022). γ'' variant-sensitive deformation behaviour of Inconel 718 superalloy. Journal of Materials Science & Technology, 126 pp. 169–181.

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    Academic Journal

    المساهمون: NSFC, Metal-based Advanced Electrical Materials Key Laboratory of Shanghai Municipal Commission of Education, Shanghai Municipal Education Commission

    المصدر: Thin Solid Films ; volume 574, page 71-77 ; ISSN 0040-6090

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    Conference

    Relation: Waite, A.M., Straube, U.N., Lloyd, N.S., Croucher, S.G., Tang, Y.T., Rong, B., Evans, A.G.R., Grasby, T.J., Myronov, M., Whall, T.E., Parker, E.H.C., Norris, D.J. and Cullis, A.G. (2002) Enhanced performance from SiGe pMOSFETs Fabricated on NOvel SiGe Virtual Substrates Grown on 10µm x 10µm Si pillars. SSDM 2002. pp. 10-11 .

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    Academic Journal

    وصف الملف: application/octet-stream; text

    Relation: https://eprints.soton.ac.uk/258988/1/Paper_for_IEEE_TED.DOC; https://eprints.soton.ac.uk/258988/2/Paper_for_IEEE_TED.pdf; Temple, M.P., Paul, D.J., Tang, Y.T., Waite, A.M., Cerrina, C, Evans, A.G.R., Grasby, T.J., Parker, E.H.C., von Känel, H and O’Neill, A.G (2005) Enhanced p-MOSFET performance using strained-Si on SiGe virtual substrates grown by low energy plasma enhanced chemical vapor deposition. IEEE Transactions on Electron Devices.

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    Academic Journal

    Relation: Paul, D.J., Temple, M., Olsen, S.H., ONeill, A.G., Tang, Y.T., Waite, A.M., Cerrina, C., Evans, A.G.R., Li, X., Zhang, J., Norris, D.J. and Cullis, A.G. (2005) Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25 µm heterostructure CMOS process. Materials Science in Semiconductor Processing, 8 (1-3), 343-346.

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    Academic Journal

    Relation: Paul, D.J. et al. (2005) Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25 mu m heterostructure CMOS process. Materials Science in Semiconductor Processing , 8(1-3), pp. 343-346. (doi:10.1016/j.mssp.2004.09.106 )

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    Academic Journal