المؤلفون: Zhao, Chunyu, Tang, Chak Wah, Cheng, Guanghui, Wang, Jiannong, Lau, Kei May

المساهمون: Research Grants Council of Hong Kong

المصدر: Materials Research Express ; volume 7, issue 11, page 115903 ; ISSN 2053-1591

الاتاحة: http://dx.doi.org/10.1088/2053-1591/abcac2
https://iopscience.iop.org/article/10.1088/2053-1591/abcac2
https://iopscience.iop.org/article/10.1088/2053-1591/abcac2/pdf

المؤلفون: Morgan, Jesse S., Tabatabaei, Fatemehsadat, Fatema, Tasneem, Tang, Chak Wah, Sun, Keye, Lau, Kei May, Beling, Andreas

مصطلحات الفهرس: Bandwidth, CC-MUTC PD, Doping, High-speed-photodiodes, III-V semiconductor materials, Indium phosphide, Low-bias, Millimeter-wave photonics, MmWave, Optical device fabrication, Performance evaluation, Photodiodes, Zero-bias, Article

URL: http://repository.hkust.edu.hk/ir/Record/1783.1-128691
https://doi.org/10.1109/JLT.2023.3298772
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0733-8724&rft.volume=&rft.issue=&rft.date=2023&rft.spage=1&rft.aulast=Morgan&rft.aufirst=Jesse+S.&rft.atitle=Bias-Insensitive+GaAsSb%2FInP+CC-MUTC+Photodiodes+for+Mmwave+Generation+up+to+325%26%23x00A0%3BGHz&rft.title=Journal+of+Lightwave+Technology
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المؤلفون: Pan, Kailing, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: AlGaN/GaN MOSHEMTs, Current collapse, Light illumination

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-123581; 2022 Compound Semiconductor Week, CSW 2022, 2022, article number 9930448; https://doi.org/10.1109/CSW55288.2022.9930448; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Pan&rft.aufirst=&rft.atitle=Current+Collapse+Reduction+in+Al2O3%2FAlGaN%2FGaN+MOSHEMTs+on+Si+with+Sub-bandgap+Light+Illumination&rft.title=2022+Compound+Semiconductor+Week,+CSW+2022; http://www.scopus.com/record/display.url?eid=2-s2.0-85142485977&origin=inward

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-123581
https://doi.org/10.1109/CSW55288.2022.9930448
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Pan&rft.aufirst=&rft.atitle=Current+Collapse+Reduction+in+Al2O3%2FAlGaN%2FGaN+MOSHEMTs+on+Si+with+Sub-bandgap+Light+Illumination&rft.title=2022+Compound+Semiconductor+Week,+CSW+2022
http://www.scopus.com/record/display.url?eid=2-s2.0-85142485977&origin=inward

المؤلفون: Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: GaN vertical trench MOSFETs, GaN-on-Si

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-123578; 2022 Compound Semiconductor Week, CSW 2022, 2022, article number 9930472; https://doi.org/10.1109/CSW55288.2022.9930472; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=High-Performance+GaN+Vertical+Trench+MOSFETs+Grown+on+Si+Substrate&rft.title=2022+Compound+Semiconductor+Week,+CSW+2022; http://www.scopus.com/record/display.url?eid=2-s2.0-85142540826&origin=inward

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-123578
https://doi.org/10.1109/CSW55288.2022.9930472
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=High-Performance+GaN+Vertical+Trench+MOSFETs+Grown+on+Si+Substrate&rft.title=2022+Compound+Semiconductor+Week,+CSW+2022
http://www.scopus.com/record/display.url?eid=2-s2.0-85142540826&origin=inward

المؤلفون: Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: GaN, Power device, Vertical transistor

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-123466; Applied Physics Express, v. 15, (12), November 2022, article number 121004; https://doi.org/10.35848/1882-0786/aca26e; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1882-0778&rft.volume=15&rft.issue=12&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=GaN+quasi-vertical+trench+MOSFETs+grown+on+Si+substrate+with+ON-current+exceeding+1+A&rft.title=Applied+Physics+Express; http://www.scopus.com/record/display.url?eid=2-s2.0-85143626815&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000898682800001

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-123466
https://doi.org/10.35848/1882-0786/aca26e
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1882-0778&rft.volume=15&rft.issue=12&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=GaN+quasi-vertical+trench+MOSFETs+grown+on+Si+substrate+with+ON-current+exceeding+1+A&rft.title=Applied+Physics+Express
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المؤلفون: Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-118603; Applied Physics Letters, v. 120, (24), June 2022, article number 242104; https://doi.org/10.1063/5.0088251; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=120&rft.issue=24&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Vertical+GaN+trench+MOSFETs+with+step-graded+channel+doping&rft.title=Applied+Physics+Letters; http://www.scopus.com/record/display.url?eid=2-s2.0-85132153077&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000811429700004

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-118603
https://doi.org/10.1063/5.0088251
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=120&rft.issue=24&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Vertical+GaN+trench+MOSFETs+with+step-graded+channel+doping&rft.title=Applied+Physics+Letters
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المؤلفون: Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: Breakdown voltage, Cleaning, Dielectrics, Fabrication, Gallium nitride, Interface charge, Logic gates, MOSFET, Performance evaluation, Thick bottom dielectric, Vertical trench MOSFET

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-115719; IEEE Electron Device Letters, v. 43, (3), March 2022, article number 9691320, p. 346-349; https://doi.org/10.1109/LED.2022.3146276; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Enhancing+ON-+and+OFF-State+Performance+of+Quasi-Vertical+GaN+Trench+MOSFETs+on+Sapphire+with+Reduced+Interface+Charges+and+a+Thick+Bottom+Dielectric&rft.title=IEEE+Electron+Device+Letters; http://www.scopus.com/record/display.url?eid=2-s2.0-85123716340&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000761656500006

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-115719
https://doi.org/10.1109/LED.2022.3146276
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Enhancing+ON-+and+OFF-State+Performance+of+Quasi-Vertical+GaN+Trench+MOSFETs+on+Sapphire+with+Reduced+Interface+Charges+and+a+Thick+Bottom+Dielectric&rft.title=IEEE+Electron+Device+Letters
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المؤلفون: Pan, Kailing, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

مصطلحات الفهرس: AlGaN/GaN MOSHEMTs, Current collapse, Light illumination, Conference paper

URL: http://repository.hkust.edu.hk/ir/Record/1783.1-123581
https://doi.org/10.1109/CSW55288.2022.9930448
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2022&rft.spage=&rft.aulast=Pan&rft.aufirst=&rft.atitle=Current+Collapse+Reduction+in+Al2O3%2FAlGaN%2FGaN+MOSHEMTs+on+Si+with+Sub-bandgap+Light+Illumination&rft.title=2022+Compound+Semiconductor+Week%2C+CSW+2022
http://www.scopus.com/record/display.url?eid=2-s2.0-85142485977&origin=inward

المؤلفون: Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-117125; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2021&rft.spage=&rft.aulast=Zhu&rft.aufirst=Renqiang&rft.atitle=High-performance+GaN+trench+gate+MOSFETs&rft.title=

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-117125
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2021&rft.spage=&rft.aulast=Zhu&rft.aufirst=Renqiang&rft.atitle=High-performance+GaN+trench+gate+MOSFETs&rft.title=

المؤلفون: Li, Peian, Zhang, Xu, Li, Yangfeng, Qi, Longheng, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: Full-color, LED, Microdisplay, Quantum dot

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-105834; Journal of the Society for Information Display, v. 29, (3), March 2021, p. 157-165; https://doi.org/10.1002/jsid.966; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1071-0922&rft.volume=&rft.issue=&rft.date=2020&rft.spage=&rft.aulast=Li&rft.aufirst=&rft.atitle=Monolithic+full-color+microdisplay+using+patterned+quantum+dot+photoresist+on+dual-wavelength+LED+epilayers&rft.title=Journal+of+the+Society+for+Information+Display; http://www.scopus.com/record/display.url?eid=2-s2.0-85090453094&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000567542000001

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-105834
https://doi.org/10.1002/jsid.966
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1071-0922&rft.volume=&rft.issue=&rft.date=2020&rft.spage=&rft.aulast=Li&rft.aufirst=&rft.atitle=Monolithic+full-color+microdisplay+using+patterned+quantum+dot+photoresist+on+dual-wavelength+LED+epilayers&rft.title=Journal+of+the+Society+for+Information+Display
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المؤلفون: Zhang, Xu, Qi, Longheng, Chong, Wing Cheung, Li, Peian, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: Active matrix, Full-color, GaN-on-Si, Micro-display, Micro-LED, Monolithic

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-105401; Journal of the Society for Information Display, v. 29, (1), January 2021, p. 47-56; https://doi.org/10.1002/jsid.962; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1071-0922&rft.volume=&rft.issue=&rft.date=2020&rft.spage=&rft.aulast=Zhang&rft.aufirst=&rft.atitle=Active+matrix+monolithic+micro-LED+full-color+micro-display&rft.title=Journal+of+the+Society+for+Information+Display; http://www.scopus.com/record/display.url?eid=2-s2.0-85089750351&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000561961700001

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-105401
https://doi.org/10.1002/jsid.962
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1071-0922&rft.volume=&rft.issue=&rft.date=2020&rft.spage=&rft.aulast=Zhang&rft.aufirst=&rft.atitle=Active+matrix+monolithic+micro-LED+full-color+micro-display&rft.title=Journal+of+the+Society+for+Information+Display
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المؤلفون: Jiang, Huaxing, Zhu, Renqiang, Lyu, Qifeng, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: Thin barrier, Normally-OFF, GaN high electron mobility transistor, P-GaN gate, High-k dielectrics, Passivation

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-108032; Semiconductor Science and Technology, v. 36, (3), March 2021, article number 034001; https://doi.org/10.1088/1361-6641/abd61b; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0268-1242&rft.volume=36&rft.issue=(3)&rft.date=2021&rft.spage=&rft.aulast=Jiang&rft.aufirst=H&rft.atitle=Thin-barrier+heterostructures+enabled+normally-OFF+GaN+high+electron+mobility+transistors&rft.title=SEMICONDUCTOR+SCIENCE+AND+TECHNOLOGY; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000607746800001; http://www.scopus.com/record/display.url?eid=2-s2.0-85100333344&origin=inward

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-108032
https://doi.org/10.1088/1361-6641/abd61b
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0268-1242&rft.volume=36&rft.issue=(3)&rft.date=2021&rft.spage=&rft.aulast=Jiang&rft.aufirst=H&rft.atitle=Thin-barrier+heterostructures+enabled+normally-OFF+GaN+high+electron+mobility+transistors&rft.title=SEMICONDUCTOR+SCIENCE+AND+TECHNOLOGY
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http://www.scopus.com/record/display.url?eid=2-s2.0-85100333344&origin=inward

المؤلفون: Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: Channel doping, Doping, Fabrication, Gallium nitride, Immune system, Logic gates, MOSFET, ON-state performance, Performance evaluation, Vertical trench MOSFET

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-110995; IEEE Electron Device Letters, v. 42, (7), July 2021, article number 9431174, p. 970-973; https://doi.org/10.1109/LED.2021.3080260; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2021&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Effects+of+p-GaN+Body+Doping+Concentration+on+the+ON-State+Performance+of+Vertical+GaN+Trench+MOSFETs&rft.title=IEEE+Electron+Device+Letters; http://www.scopus.com/record/display.url?eid=2-s2.0-85105864568&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000668843100004

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-110995
https://doi.org/10.1109/LED.2021.3080260
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0741-3106&rft.volume=&rft.issue=&rft.date=2021&rft.spage=&rft.aulast=Zhu&rft.aufirst=&rft.atitle=Effects+of+p-GaN+Body+Doping+Concentration+on+the+ON-State+Performance+of+Vertical+GaN+Trench+MOSFETs&rft.title=IEEE+Electron+Device+Letters
http://www.scopus.com/record/display.url?eid=2-s2.0-85105864568&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000668843100004

المؤلفون: Qi, Longheng, Zhang, Xu, Chong, Wing Cheung, Li, Peian, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: Active matrix, Full-color, QDs-PR, μLED

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-110663; Proceedings of the International Display Workshops, v. 2, November 2019, p. 433-435; https://doi.org/10.36463/idw.2019.0433; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1883-2490&rft.volume=v. 2&rft.issue=&rft.date=2019&rft.spage=433&rft.aulast=Qi&rft.aufirst=L.&rft.atitle=Active+matrix+monolithic+full-color+LED+micro-display&rft.title=Proceedings+of+the+International+Display+Workshops; http://www.scopus.com/record/display.url?eid=2-s2.0-85105277017&origin=inward

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-110663
https://doi.org/10.36463/idw.2019.0433
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1883-2490&rft.volume=v. 2&rft.issue=&rft.date=2019&rft.spage=433&rft.aulast=Qi&rft.aufirst=L.&rft.atitle=Active+matrix+monolithic+full-color+LED+micro-display&rft.title=Proceedings+of+the+International+Display+Workshops
http://www.scopus.com/record/display.url?eid=2-s2.0-85105277017&origin=inward

المؤلفون: Li, Peian, Zhang, Xu, Li, Yangfeng, Qi, Longheng, Tang, Chak Wah, Lau, Kei May

مصطلحات موضوعية: Full color, LED, Micro-display, Quantum dot

Relation: http://repository.ust.hk/ir/Record/1783.1-103202; Proceedings of the International Display Workshops, v. 2, 2019, p. 770-773; https://doi.org/10.36463/idw.2019.0770; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2019&rft.spage=&rft.aulast=Li&rft.aufirst=Peian&rft.atitle=Monolithic+Full-color+LED+Micro-display+Using+Dual+Wavelength+LED+Epi-layers&rft.title=The+26th+International+Display+Workshops; http://www.scopus.com/record/display.url?eid=2-s2.0-85092624873&origin=inward

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-103202
https://doi.org/10.36463/idw.2019.0770
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2019&rft.spage=&rft.aulast=Li&rft.aufirst=Peian&rft.atitle=Monolithic+Full-color+LED+Micro-display+Using+Dual+Wavelength+LED+Epi-layers&rft.title=The+26th+International+Display+Workshops
http://www.scopus.com/record/display.url?eid=2-s2.0-85092624873&origin=inward

المؤلفون: Qi, Longheng ECE, Zhang, Xu, Chong, Wing Cheung, Li, Peian, Tang, Chak Wah, Lau, Kei May

Relation: http://repository.ust.hk/ir/Record/1783.1-103096; The 26th International Display Workshops (IDW'19), Sapporo, Japan, 27-29 November 2019; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2019&rft.spage=&rft.aulast=Qi&rft.aufirst=Longheng&rft.atitle=Active+Matrix+Monolithic+Full-Color+LED+Micro+Display&rft.title=The+26th+International+Display+Workshops%28IDW%2719%29

الاتاحة: http://repository.ust.hk/ir/Record/1783.1-103096
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=&rft.volume=&rft.issue=&rft.date=2019&rft.spage=&rft.aulast=Qi&rft.aufirst=Longheng&rft.atitle=Active+Matrix+Monolithic+Full-Color+LED+Micro+Display&rft.title=The+26th+International+Display+Workshops%28IDW%2719%29

المؤلفون: Zhang, Yuliang, Zhang, Xu, Zhu, Min, Chen, Jiaxiang, Tang, Chak Wah, Lau, Kei May, Zou, Xinbo

المساهمون: ShanghaiTech University Startup Fund, Shanghai Pujiang Program, Shanghai Eastern Scholar (Youth) Program

المصدر: IEEE Transactions on Electron Devices ; volume 67, issue 10, page 3992-3998 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2020.3012422
http://xplorestaging.ieee.org/ielx7/16/9204488/09165180.pdf?arnumber=9165180

المؤلفون: Zhao, Chunyu, Zhang, Xu, Tang, Chak Wah, Wang, Jiannong, Lau, Kei May

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-106233; Journal of Vacuum Science and Technology B, v. 38, (6), November 2020, article number 060602; https://doi.org/10.1116/6.0000527; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=2166-2746&rft.volume=38&rft.issue=(6)&rft.date=2020&rft.spage=&rft.aulast=Zhao&rft.aufirst=&rft.atitle=Selective+lateral+photoelectrochemical+wet+etching+of+InGaN+nanorods&rft.title=Journal+of+Vacuum+Science+and+Technology+B%3A+Nanotechnology+and+Microelectronics; http://www.scopus.com/record/display.url?eid=2-s2.0-85093982766&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000582508400002

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-106233
https://doi.org/10.1116/6.0000527
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=2166-2746&rft.volume=38&rft.issue=(6)&rft.date=2020&rft.spage=&rft.aulast=Zhao&rft.aufirst=&rft.atitle=Selective+lateral+photoelectrochemical+wet+etching+of+InGaN+nanorods&rft.title=Journal+of+Vacuum+Science+and+Technology+B%3A+Nanotechnology+and+Microelectronics
http://www.scopus.com/record/display.url?eid=2-s2.0-85093982766&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000582508400002

المؤلفون: Zhao, Chunyu, Tang, Chak Wah, Wang, Jiannong, Lau, Kei May

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-104909; Applied Physics Letters, v. 117, (3), July 2020, article number 0012045; https://doi.org/10.1063/5.0012045; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=117&rft.issue=(3)&rft.date=2020&rft.spage=&rft.aulast=Zhao&rft.aufirst=&rft.atitle=Ultra-low+threshold+green+InGaN+quantum+dot+microdisk+lasers+grown+on+silicon&rft.title=Applied+Physics+Letters; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000554942600003; http://www.scopus.com/record/display.url?eid=2-s2.0-85088878425&origin=inward

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-104909
https://doi.org/10.1063/5.0012045
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0003-6951&rft.volume=117&rft.issue=(3)&rft.date=2020&rft.spage=&rft.aulast=Zhao&rft.aufirst=&rft.atitle=Ultra-low+threshold+green+InGaN+quantum+dot+microdisk+lasers+grown+on+silicon&rft.title=Applied+Physics+Letters
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000554942600003
http://www.scopus.com/record/display.url?eid=2-s2.0-85088878425&origin=inward

المؤلفون: Zhao, Chunyu, Tang, Chak Wah, Lai, Billy, Cheng, Guanghui, Wang, Jiannong, Lau, Kei May

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-103631; Photonics Research, v. 8, (5), May 2020, p. 750-754; https://doi.org/10.1364/PRJ.380158; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=2327-9125&rft.volume=8&rft.issue=5&rft.date=2020&rft.spage=750&rft.aulast=Zhao&rft.aufirst=&rft.atitle=Low-efficiency-droop%20InGaN%20quantum%20dot%20light-emitting%20diodes%20operating%20in%20the%20%22green%20gap%22&rft.title=Photonics%20Research; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000530893100017; http://www.scopus.com/record/display.url?eid=2-s2.0-85084928388&origin=inward

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-103631
https://doi.org/10.1364/PRJ.380158
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=2327-9125&rft.volume=8&rft.issue=5&rft.date=2020&rft.spage=750&rft.aulast=Zhao&rft.aufirst=&rft.atitle=Low-efficiency-droop%20InGaN%20quantum%20dot%20light-emitting%20diodes%20operating%20in%20the%20%22green%20gap%22&rft.title=Photonics%20Research
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000530893100017
http://www.scopus.com/record/display.url?eid=2-s2.0-85084928388&origin=inward