المؤلفون: Gao HL (Gao, H. L.), Zhang XW (Zhang, X. W.), Yin ZG (Yin, Z. G.), Tan HR (Tan, H. R.), Zhang SG (Zhang, S. G.), Meng JH (Meng, J. H.), Liu X (Liu, X.)

مصطلحات موضوعية: 半导体材料

Relation: APPLIED PHYSICS LETTERS; Gao HL (Gao, H. L.); Zhang XW (Zhang, X. W.); Yin ZG (Yin, Z. G.); Tan HR (Tan, H. R.); Zhang SG (Zhang, S. G.); Meng JH (Meng, J. H.); Liu X (Liu, X.).Plasmon enhanced polymer solar cells by spin-coating Au nanoparticles on indium-tin-oxide substrate. APPLIED PHYSICS LETTERS ,2012,101(13):133903; http://ir.semi.ac.cn/handle/172111/23822

الاتاحة: http://ir.semi.ac.cn/handle/172111/23822

المؤلفون: Tan HR (Tan H. R.), Zhang XW (Zhang X. W.), Tan FR (Tan F. R.), Gao HL (Gao H. L.), Yin ZG (Yin Z. G.), Bai YM (Bai Y. M.), Zhang XL (Zhang X. L.), Qu SC (Qu S. C.)

مصطلحات موضوعية: 半导体材料

Relation: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE; Tan HR (Tan H. R.); Zhang XW (Zhang X. W.); Tan FR (Tan F. R.); Gao HL (Gao H. L.); Yin ZG (Yin Z. G.); Bai YM (Bai Y. M.); Zhang XL (Zhang X. L.); Qu SC (Qu S. C.).Performance improvement of conjugated polymer and ZnO hybrid solar cells using nickel oxide as anode buffer layer.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2011,208(12):2865-2870; http://ir.semi.ac.cn/handle/172111/22929

الاتاحة: http://ir.semi.ac.cn/handle/172111/22929

المؤلفون: Dong JJ (Dong J. J.), Zhang XW (Zhang X. W.), Yin ZG (Yin Z. G.), Zhang SG (Zhang S. G.), Wang JX (Wang J. X.), Tan HR (Tan H. R.), Gao Y (Gao Y.), Si FT (Si F. T.), Gao HL (Gao H. L.)

مصطلحات موضوعية: 半导体材料

Relation: ACS APPLIED MATERIALS & INTERFACES; Dong JJ (Dong J. J.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.); Zhang SG (Zhang S. G.); Wang JX (Wang J. X.); Tan HR (Tan H. R.); Gao Y (Gao Y.); Si FT (Si F. T.); Gao HL (Gao H. L.).Controllable Growth of Highly Ordered ZnO Nanorod Arrays via Inverted Self-Assembled Monolayer Template.ACS APPLIED MATERIALS & INTERFACES,2011,3(11):4388-4395; http://ir.semi.ac.cn/handle/172111/22896

الاتاحة: http://ir.semi.ac.cn/handle/172111/22896

المؤلفون: Ying J (Ying J.), Zhang XW (Zhang X. W.), Fan YM (Fan Y. M.), Tan HR (Tan H. R.), Yin ZG (Yin Z. G.), Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn

مصطلحات موضوعية: Cubic Boron Nitride, Doping, Ion Beam Assisted depositIon, X-ray Photoelectron Spectroscopy, Ray Photoelectron-spectroscopy, Vapor-deposition, Si, Nucleation, Growth, 半导体材料, ion beam lithography, photoelectron spectroscopy, vapor-plating, metric system, silicon, development, 掺杂, 溅射, focused ion beam technology, fib etching, fib technology, focused ion beam etching, ion beam applications, ibad, ion lithography, ionised cluster beam deposition, ionized cluster beam deposition, sputter etching, ion etching, plasma ashing

Relation: DIAMOND AND RELATED MATERIALS; Ying J (Ying J.), Zhang XW (Zhang X. W.), Fan YM (Fan Y. M.), Tan HR (Tan H. R.), Yin ZG (Yin Z. G.).Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films.DIAMOND AND RELATED MATERIALS,2010,19(11):1371-1376; http://ir.semi.ac.cn/handle/172111/20684

الاتاحة: http://ir.semi.ac.cn/handle/172111/20684

المؤلفون: You JB (You J. B.), Zhang XW (Zhang X. W.), Zhang SG (Zhang S. G.), Wang JX (Wang J. X.), Yin ZG (Yin Z. G.), Tan HR (Tan H. R.), Zhang WJ (Zhang W. J.), Chu PK (Chu P. K.), Cui B (Cui B.), Wowchak AM (Wowchak A. M.), Dabiran AM (Dabiran A. M.), Chow PP (Chow P. P.), Zhang, XW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn, paul.chu@cityu.edu.hk

مصطلحات موضوعية: Zno, Deposition, 半导体材料, sedimentation, 沉[降堆]积, electrolytic deposition, sedimentation (deutsch), sedimentation (francais), accretion, sediment, sedimentology, fresh-water sedimentation, marine sedimentation, 沉降, 吸积, accumulation of sediments, deposition (geology), freshwater sedimentation, geological deposition, sediment deposition, centrifugation, 沉积

Relation: APPLIED PHYSICS LETTERS; You JB (You J. B.), Zhang XW (Zhang X. W.), Zhang SG (Zhang S. G.), Wang JX (Wang J. X.), Yin ZG (Yin Z. G.), Tan HR (Tan H. R.), Zhang WJ (Zhang W. J.), Chu PK (Chu P. K.), Cui B (Cui B.), Wowchak AM (Wowchak A. M.), Dabiran AM (Dabiran A. M.), Chow PP (Chow P. P.).Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes.APPLIED PHYSICS LETTERS,2010,96(20):Art. No. 201102; http://ir.semi.ac.cn/handle/172111/11338

الاتاحة: http://ir.semi.ac.cn/handle/172111/11338