المؤلفون: Volosov, V., Cascino, S., Saggio, M., Imbruglia, A., Di Giovanni, F., Fiegna, C., Sangiorgi, E., Tallarico, A.N.

المصدر: Solid-State Electronics ; volume 207, page 108699 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2023.108699
https://api.elsevier.com/content/article/PII:S0038110123001120?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110123001120?httpAccept=text/plain

المؤلفون: Rossetto I., Meneghini M., Canato E., Barbato M., Stoffels S., Posthuma S., Decoutere S., Tallarico A.N., Meneghesso G., Zanoni E.

مصطلحات موضوعية: GaN HEMT, p-GaN gate, Trasmission line pulse (TLP), long term reliability

Relation: https://zenodo.org/communities/eu; https://doi.org/10.1016/j.microrel.2017.06.061; oai:zenodo.org:1247376

الاتاحة: https://doi.org/10.1016/j.microrel.2017.06.061

المؤلفون: Magnone, P., Tallarico, A.N., Pistollato, S., Depetro, R., Croce, G.

المساهمون: ECSEL

المصدر: Solid-State Electronics ; volume 185, page 108068 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2021.108068
https://api.elsevier.com/content/article/PII:S0038110121001131?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110121001131?httpAccept=text/plain

المؤلفون: Stoffels, S., Posthuma, N., Decoutere, S., Bakeroot, B., Tallarico, A.N., Sangiorgi, Enrico, Fiegna, Claudio, Zheng, J., Ma, X., Borga, M., Fabris, Elena, Meneghini, M., Zanoni, E., Meneghesso, G., Priesol, J., Satka, A.

المصدر: 2019 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps.2019.8720411
http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720411.pdf?arnumber=8720411

المؤلفون: Tallarico, A.N., Posthuma, N.E., Bakeroot, B., Decoutere, S., Sangiorgi, E., Fiegna, C.

المصدر: Microelectronics Reliability ; volume 114, page 113872 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2020.113872
https://api.elsevier.com/content/article/PII:S0026271420303954?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271420303954?httpAccept=text/plain

المؤلفون: Reggiani, S., Rossetti, M., Gnudi, A., Tallarico, A.N., Molfese, A., Manzini, S., Depetro, R., Croce, G., Sangiorgi, E., Fiegna, C.

المساهمون: ECSEL, H2020-EU ECSEL

المصدر: Microelectronics Reliability ; volume 88-90, page 1090-1093 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2018.07.097
https://api.elsevier.com/content/article/PII:S0026271418306590?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271418306590?httpAccept=text/plain

المؤلفون: Tallarico, A.N., Reggiani, S., Magnone, P., Croce, G., Depetro, R., Gattari, P., Sangiorgi, E., Fiegna, C.

المساهمون: ECSEL

المصدر: Microelectronics Reliability ; volume 76-77, page 475-479 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2017.07.043
https://api.elsevier.com/content/article/PII:S002627141730327X?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S002627141730327X?httpAccept=text/plain

المؤلفون: Millesimo M., Borga M., Valentini L., Bakeroot B., Posthuma N., Vohra A., Decoutere S., Fiegna C., Tallarico A. N.

المساهمون: Millesimo M., Borga M., Valentini L., Bakeroot B., Posthuma N., Vohra A., Decoutere S., Fiegna C., Tallarico A.N.

مصطلحات موضوعية: AlGaN/GaN HEMT, back-gating current deep-level transient spectroscopy (I-DLTS), buffer trapping, RON drift, stretched exponential

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001063640800001; volume:70; issue:10; firstpage:5203; lastpage:5209; numberofpages:7; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11585/954865; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85168756851; https://ieeexplore.ieee.org/document/10225455

الاتاحة: https://hdl.handle.net/11585/954865
https://doi.org/10.1109/TED.2023.3304272
https://ieeexplore.ieee.org/document/10225455

المؤلفون: Tallarico A. N., Millesimo M., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C.

المساهمون: Tallarico A.N., Millesimo M., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C.

مصطلحات موضوعية: Charge trapping, dynamic VTH hysteresi, gate leakage, p-GaN gate high-electron-mobility transistor (HEMT), TCAD modeling, tunneling model

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000734073000001; volume:69; issue:2; firstpage:507; lastpage:513; numberofpages:7; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11585/844683; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85122084462; https://ieeexplore.ieee.org/document/9662229

الاتاحة: https://hdl.handle.net/11585/844683
https://doi.org/10.1109/TED.2021.3134928
https://ieeexplore.ieee.org/document/9662229

المؤلفون: Millesimo M., Borga M., Bakeroot B., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C., Tallarico A. N.

المساهمون: Millesimo M., Borga M., Bakeroot B., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C., Tallarico A.N.

مصطلحات موضوعية: GaN HEMTs, Gate Reliability, schottky gate, pulsed gate stress, switching conditions

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000876041700017; volume:43; issue:11; firstpage:1846; lastpage:1849; numberofpages:4; journal:IEEE ELECTRON DEVICE LETTERS; https://hdl.handle.net/11585/899682; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85139453343; https://ieeexplore.ieee.org/document/9889743

الاتاحة: https://hdl.handle.net/11585/899682
https://doi.org/10.1109/LED.2022.3206610
https://ieeexplore.ieee.org/document/9889743

المؤلفون: Tallarico A. N., Reggiani S., Depetro R., Croce G., Sangiorgi E., Fiegna C.

المساهمون: Tallarico A.N., Reggiani S., Depetro R., Croce G., Sangiorgi E., Fiegna C.

مصطلحات موضوعية: Hot-carrier stre, impact ionization, on-resistance degradation, p-channel power LDMOS, reliability, TCAD modeling

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-7281-3199-3; info:eu-repo/semantics/altIdentifier/wos/WOS:000612717200096; ispartofbook:2020 IEEE International Reliability Physics Symposium Proceedings (IRPS); 2020 IEEE International Reliability Physics Symposium, IRPS 2020; volume:2020; firstpage:1; lastpage:5; numberofpages:5; serie:IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS; info:eu-repo/grantAgreement/EC/H2020/737417; http://hdl.handle.net/11585/785954; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85088360433; https://ieeexplore.ieee.org/document/9129112

الاتاحة: http://hdl.handle.net/11585/785954
https://doi.org/10.1109/IRPS45951.2020.9129112
https://ieeexplore.ieee.org/document/9129112

المؤلفون: Millesimo M., Fiegna C., Posthuma N., Borga M., Bakeroot B., Decoutere S., Tallarico A. N.

المساهمون: Millesimo M., Fiegna C., Posthuma N., Borga M., Bakeroot B., Decoutere S., Tallarico A.N.

مصطلحات موضوعية: Forward gate stre, gate reliability, isolation failure, lifetime model, p-GaN high-electron-mobility transistor (HEMT), temperature dependency, time-dependent gate breakdown (TDGB)

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000711645500060; volume:68; issue:11; firstpage:5701; lastpage:5706; numberofpages:6; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11585/838778; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85115168496; https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9540042

الاتاحة: https://hdl.handle.net/11585/838778
https://doi.org/10.1109/TED.2021.3111144
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9540042

المؤلفون: Millesimo M., Posthuma N., Bakeroot B., Borga M., Decoutere S., Tallarico A. N.

المساهمون: Millesimo M., Posthuma N., Bakeroot B., Borga M., Decoutere S., Tallarico A.N.

مصطلحات موضوعية: Breakdown mechanism, Field plate, Gallium nitride, Hemt, OFF-state reliability, P-type gate, Time-dependent breakdown

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000628910900008; volume:21; issue:1; firstpage:57; lastpage:63; numberofpages:7; journal:IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY; https://hdl.handle.net/11585/833392; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85099109490; https://ieeexplore.ieee.org/document/9311207

الاتاحة: https://hdl.handle.net/11585/833392
https://doi.org/10.1109/TDMR.2020.3048274
https://ieeexplore.ieee.org/document/9311207

المؤلفون: Pizzotti M., Crescentini M., Tallarico A. N., Romani A.

المساهمون: Pizzotti M., Crescentini M., Tallarico A.N., Romani A.

مصطلحات موضوعية: Current sensing, DC/DC converter, Hot-carrier degradation, Online monitoring, Reliability

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781728109961; info:eu-repo/semantics/altIdentifier/wos/WOS:000534573400150; ispartofbook:Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019; 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019; volume:2019; firstpage:562; lastpage:565; numberofpages:4; info:eu-repo/grantAgreement/EC/H2020/653933; http://hdl.handle.net/11585/735527; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85079145556; https://ieeexplore.ieee.org/document/8964721

الاتاحة: http://hdl.handle.net/11585/735527
https://doi.org/10.1109/ICECS46596.2019.8964721
https://ieeexplore.ieee.org/document/8964721

المؤلفون: Cornigli D., Tallarico A. N., Reggiani S., Fiegna C., Sangiorgi E., Sanchez L., Valdivieso C., Consentino G., Crupi F.

المساهمون: Cornigli D., Tallarico A.N., Reggiani S., Fiegna C., Sangiorgi E., Sanchez L., Valdivieso C., Consentino G., Crupi F.

مصطلحات موضوعية: SiC MOSFET, TCAD simulation, Vth degradation

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-7281-1539-9; info:eu-repo/semantics/altIdentifier/wos/WOS:000520409500021; ispartofbook:European Solid-State Device Research Conference; 49th European Solid-State Device Research Conference, ESSDERC 2019; volume:2019-; firstpage:82; lastpage:85; numberofpages:4; serie:PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE; info:eu-repo/grantAgreement/EC/H2020/737483; http://hdl.handle.net/11585/728313; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85075714297; https://ieeexplore.ieee.org/xpl/conhome/8894830/proceeding; https://ieeexplore.ieee.org/document/8901761/authors#authors

الاتاحة: http://hdl.handle.net/11585/728313
https://doi.org/10.1109/ESSDERC.2019.8901761
https://ieeexplore.ieee.org/xpl/conhome/8894830/proceeding
https://ieeexplore.ieee.org/document/8901761/authors#authors

المؤلفون: Giuliano F., Magnone P., Pistollato S., Tallarico A. N., Reggiani S., Fiegna C., Depetro R., Rossetti M., Croce G.

المساهمون: Giuliano F., Magnone P., Pistollato S., Tallarico A.N., Reggiani S., Fiegna C., Depetro R., Rossetti M., Croce G.

مصطلحات موضوعية: Hot-carrier degradation, LDMOS, Reliability, Split-gate, TCAD

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000534415700017; volume:109; firstpage:1; lastpage:5; numberofpages:5; journal:MICROELECTRONICS RELIABILITY; https://hdl.handle.net/11585/786004; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85084172549; https://www.sciencedirect.com/science/article/pii/S0026271419312491?via=ihub

الاتاحة: https://hdl.handle.net/11585/786004
https://doi.org/10.1016/j.microrel.2020.113643
https://www.sciencedirect.com/science/article/pii/S0026271419312491?via=ihub

المؤلفون: Tallarico A. N., Stoffels S., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C.

المساهمون: Tallarico A.N., Stoffels S., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C.

مصطلحات موضوعية: breakdown voltage, doping concentration, magnesium compensation proce, p-type GaN gate, Positive bias temperature instability, power HEMT, threshold voltage instability

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000464306900008; volume:40; issue:4; firstpage:518; lastpage:521; numberofpages:4; journal:IEEE ELECTRON DEVICE LETTERS; http://hdl.handle.net/11585/705151; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85064093597; https://ieeexplore.ieee.org/document/8636498

الاتاحة: http://hdl.handle.net/11585/705151
https://doi.org/10.1109/LED.2019.2897911
https://ieeexplore.ieee.org/document/8636498

المؤلفون: Capasso G., Zanuccoli M., Tallarico A. N., Fiegna C.

المساهمون: Capasso G., Zanuccoli M., Tallarico A.N., Fiegna C.

مصطلحات موضوعية: DC-DC converter, GaN HEMT, in-circuit characterization, ON-state resistance drift, reliability, threshold voltage shift

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001082241300001; volume:70; issue:11; firstpage:5807; lastpage:5813; numberofpages:7; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11585/954868; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85174820532; https://ieeexplore.ieee.org/document/10269789

الاتاحة: https://hdl.handle.net/11585/954868
https://doi.org/10.1109/TED.2023.3318865
https://ieeexplore.ieee.org/document/10269789

المؤلفون: Capasso G., Zanuccoli M., Tallarico A. N., Fiegna C.

المساهمون: Capasso G., Zanuccoli M., Tallarico A.N., Fiegna C.

مصطلحات موضوعية: GaN power HEMT, reliability analysi, RON degradation, VTH, drift

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-6654-8497-8; info:eu-repo/semantics/altIdentifier/wos/WOS:000904209900043; ispartofbook:European Solid-State Device Research Conference; 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022; volume:2022-; firstpage:392; lastpage:395; numberofpages:4; serie:PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE; https://hdl.handle.net/11585/916829; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85142708129

الاتاحة: https://hdl.handle.net/11585/916829
https://doi.org/10.1109/ESSDERC55479.2022.9947200

المؤلفون: Millesimo M., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C., Tallarico A. N.

المساهمون: Millesimo M., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C., Tallarico A.N.

مصطلحات موضوعية: Gallium Nitride, HEMTs Reliability, p-GaN Gate, Pulsed Gate Stre, TCAD Modeling

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-6654-7950-9; ispartofbook:IEEE International Reliability Physics Symposium Proceedings; 2022 IEEE International Reliability Physics Symposium, IRPS 2022; volume:2022-; firstpage:10B.2-1; lastpage:10B.2-6; numberofpages:6; serie:IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS; info:eu-repo/grantAgreement/EC/H2020/876659; http://hdl.handle.net/11585/895283; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85130735585

الاتاحة: http://hdl.handle.net/11585/895283
https://doi.org/10.1109/IRPS48227.2022.9764592