نتائج البحث - "Takatoshi YODA"

1

Academic Journal

Relationship between Resistive Switching Effect and Secondary Electron Yield in Transition Metal Oxide Films / 遷移金属酸化物における抵抗スイッチング現象と二次電子放出効率との相関関係

المؤلفون: Kazufumi DOBASHI, Kenichi KITAMURA, Kentaro KINOSHITA, Satoru KISHIDA, Takatoshi YODA, 依田貴稔, 北村健一, 土橋一史, 岸田悟, 木下健太郎

المصدر: 表面科学 / Hyomen Kagaku. 2011, 32(7):422

2

Academic Journal

Study on Fabrication of Forming-Free Resistance Random Access Memory (ReRAM) / フォーミングを必要としない抵抗変化メモリ（ReRAM）の作製に関する研究

المؤلفون: Kazufumi DOBASHI, Kentaro KINOSHITA, Satoru KISHIDA, Takatoshi YODA, Tatsuya MAKINO, 依田貴稔, 土橋一史, 岸田悟, 木下健太郎, 牧野達也

المصدر: Journal of the Vacuum Society of Japan. 2010, 53(3):223

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3

Academic Journal

Dependence of Memory Characteristics on Crystallinity in NiO-ReRAM / NiO を用いた抵抗変化型メモリ（ReRAM）の結晶性とメモリ特性

المؤلفون: Akihiro HANADA, Kazufumi DOBASHI, Kentaro KINOSITA, Satoru KISHIDA, Takatoshi YODA, Takumi OKUTANI, Tatsuya MAKINO, 依田貴稔, 土橋一史, 奥谷匠, 岸田悟, 木下健太郎, 牧野達也, 花田明紘

المصدر: Journal of the Vacuum Society of Japan. 2010, 53(3):129

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4

Academic Journal

Universal Relation between Reset Current and Initial Resistance in Forming-Free Resistance Random Access Memory / フォーミングフリー抵抗変化型メモリにおけるリセット電流と初期抵抗値の普遍的な関係

المؤلفون: Kazufumi DOBASHI, Kenichi KITAMURA, Kentaro KINOSHITA, Satoru KISHIDA, Takatoshi YODA, 依田貴稔, 北村健一, 土橋一史, 岸田悟, 木下健太郎

المصدر: Journal of the Vacuum Society of Japan. 2011, 54(3):228

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5

Academic Journal

Universal relation between reset current and initial resistance in forming-free resistance random access memory / フォーミングフリーReRAMにおけるリセット電流と初期抵抗値の普遍的な関係

المؤلفون: Kazufumi Dobashi, Kenichi Kitamura, Kentaro Kinoshita, Satoru Kishida, Takatoshi Yoda, 依田貴稔, 北村健一, 土橋一史, 岸田悟, 木下健太郎

المصدر: Abstract of annual meeting of the Surface Science of Japan. 2010, :391

6

Academic Journal

Relation between Resistive Switching Effect and Secondary Electron Image a in Transition Metal Oxide Films / 遷移金属酸化物における抵抗変化現象と二次電子像の相関関係

المؤلفون: Kazufumi Dobashi, Kentaro Kinoshita, Satoru Kishida, Takatoshi Yoda, 依田貴稔, 土橋一史, 岸田悟, 木下健太郎

المصدر: Abstract of annual meeting of the Surface Science of Japan. 2010, :370

7

Analysis on data storage area of NiO-ReRAM with secondary electron image

المؤلفون: Takatoshi Yoda, Satoru Kishida, Tatsuya Makino, Kentaro Kinoshita, Kazufumi Dobashi

المصدر: Journal of Materials Research. 26:45-49

مصطلحات موضوعية: Conventional transmission electron microscope, Materials science, Scanning electron microscope, business.industry, Mechanical Engineering, Non-blocking I/O, Scanning confocal electron microscopy, Electron microprobe, Condensed Matter Physics, Secondary electrons, Mechanics of Materials, Optoelectronics, Energy filtered transmission electron microscopy, General Materials Science, business, Environmental scanning electron microscope

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::81e9e736ae3ad0d7ef69fbc87084111a
https://doi.org/10.1557/jmr.2010.57

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8

Study on fabrication method of forming‐free resistance random access memory

المؤلفون: Takatoshi Yoda, Satoru Kishida, Kentaro Kinoshia, Tatsuya Makino, Kazufumi Dobashi

المصدر: physica status solidi c. 8:546-548

مصطلحات موضوعية: Fabrication, Materials science, business.industry, Non-blocking I/O, Forming processes, Nanotechnology, Condensed Matter Physics, Resistive random-access memory, Memory cell, Electrode, Optoelectronics, Reactive-ion etching, Science, technology and society, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::845b04ec2b6f6b6d15a1ec1e03f4a368
https://doi.org/10.1002/pssc.201000600

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9

Academic Journal

Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area With Secondary Electron Image

المؤلفون: Kinoshita, Kentaro, Makino, Tatsuya, Takatoshi, Yoda, Kazufumi, Dobashi, Satoru, Kishida

المصدر: MRS Proceedings ; volume 1250 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-1250-g12-03
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400002669

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10

Resistance Change Caused by Electrochemically Induced Carrier Injection in NiO Films

المؤلفون: K. Honda, Takatoshi Yoda, N. Sawai, Satoru Kishida, Kentaro Kinoshita, Takahiro Fukuhara

المصدر: MRS Proceedings. 1406

مصطلحات موضوعية: Materials science, Silicon, chemistry, Depletion region, Scanning electron microscope, Annealing (metallurgy), Schottky barrier, Non-blocking I/O, Microscopy, Analytical chemistry, chemistry.chemical_element, Dielectric

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3640286ee3e52b81809231aa12750f37
https://doi.org/10.1557/opl.2012.66

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11

Memory Retention Characteristics of Data Storage Area Written in Transition Metal Oxide Films by Using Atomic Force Microscope

المؤلفون: Takatoshi Yoda, Satoru Kishida, Kentaro Kinoshita

المصدر: MRS Proceedings. 1337

مصطلحات موضوعية: chemistry.chemical_compound, Scanning probe microscopy, Materials science, chemistry, Non-blocking I/O, Analytical chemistry, Oxide, Electron beam processing, Scanning capacitance microscopy, Conductive atomic force microscopy, Secondary electrons, Resistive random-access memory

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bfd47f5a1583d37304730aa1bff639c3
https://doi.org/10.1557/opl.2011.1070

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