نتائج البحث - "Takashima, Shinya"

المساهمون: MEXT-Program for Creation of Innovative Core Technology for Power Electronics, MEXT-Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society, JSPS KAKENHI

المصدر: Scientific Reports ; volume 11, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/s41598-021-00102-2
https://www.nature.com/articles/s41598-021-00102-2.pdf
https://www.nature.com/articles/s41598-021-00102-2

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7

Academic Journal

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing.

المؤلفون: Uzuhashi, Jun, Chen, Jun, Kumar, Ashutosh, Yi, Wei, Ohkubo, Tadakatsu, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Sierakowski, Kacper, Bockowski, Michal, Sakurai, Hideki, Kachi, Tetsu, Sekiguchi, Takashi, Hono, Kazuhiro

المصدر: Journal of Applied Physics; 2022, Vol. 131 Issue 18, p1-8, 8p

8

Conference

Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

المؤلفون: Tanaka, Ryo, Takashima, Shinya, Ueno, Katsunori, Horita, Masahiro, Suda, Jun, Uzuhashi, Jun, Ohkubo, Tadakatsu, Edo, Masaharu

المصدر: 2023 21st International Workshop on Junction Technology (IWJT)

الاتاحة: http://dx.doi.org/10.23919/iwjt59028.2023.10175173
http://xplorestaging.ieee.org/ielx7/10175156/10175093/10175173.pdf?arnumber=10175173

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9

Academic Journal

Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion

المؤلفون: Chen, Jun, Yi, Wei, Kimura, Takashi, Takashima, Shinya, Edo, Masaharu, Sekiguchi, Takashi

المصدر: Applied Physics Express ; volume 12, issue 5, page 051010 ; ISSN 1882-0778 1882-0786

الاتاحة: http://dx.doi.org/10.7567/1882-0786/ab14cb
http://iopscience.iop.org/article/10.7567/1882-0786/ab14cb
http://iopscience.iop.org/article/10.7567/1882-0786/ab14cb/pdf
http://stacks.iop.org/1882-0786/12/i=5/a=051010/pdf
http://stacks.iop.org/1882-0786/12/i=5/a=051010?key=crossref.e621c3e6a9c355ceecb3c36b71ddb8c5

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10

Academic Journal

Influence of implanted Mg concentration on defects and Mg distribution in GaN.

المؤلفون: Kumar, Ashutosh, Yi, Wei, Uzuhashi, Jun, Ohkubo, Tadakatsu, Chen, Jun, Sekiguchi, Takashi, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Hono, Kazuhiro

المصدر: Journal of Applied Physics; 8/14/2020, Vol. 128 Issue 6, p1-8, 8p, 2 Diagrams, 6 Graphs

مصطلحات موضوعية: CATHODOLUMINESCENCE, ATOM-probe tomography, SCANNING transmission electron microscopy, DISLOCATION loops, GALLIUM nitride

11

Academic Journal

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

المؤلفون: Kumar, Ashutosh, Mitsuishi, Kazutaka, Hara, Toru, Kimoto, Koji, Irokawa, Yoshihiro, Nabatame, Toshihide, Takashima, Shinya, Ueno, Katsunori, Edo, Masaharu, Koide, Yasuo

المساهمون: Ministry of Education, Culture, Sports, Science and Technology

المصدر: Nanoscale Research Letters ; volume 13, issue 1 ; ISSN 1931-7573 1556-276X

الاتاحة: http://dx.doi.org/10.1186/s11671-018-2804-y
http://link.springer.com/content/pdf/10.1186/s11671-018-2804-y.pdf
http://link.springer.com/article/10.1186/s11671-018-2804-y/fulltext.html

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12

Academic Journal

Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates.

المؤلفون: Kumar, Ashutosh, Uzuhashi, Jun, Ohkubo, Tadakatsu, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Hono, Kazuhiro

المصدر: Journal of Applied Physics; 12/21/2019, Vol. 126 Issue 23, p1-8, 8p, 3 Diagrams, 5 Graphs

مصطلحات موضوعية: MAGNESIUM ions, SCANNING transmission electron microscopy, ATOM-probe tomography, QUANTITATIVE research, INDIUM gallium nitride, GALLIUM nitride

13

Academic Journal

Retraction: “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”

المؤلفون: Horita, Masahiro, Takashima, Shinya, Tanaka, Ryo, Matsuyama, Hideaki, Ueno, Katsunori, Edo, Masaharu, Suda, Jun

المصدر: Japanese Journal of Applied Physics ; volume 55, issue 11, page 119201 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.7567/jjap.55.119201
http://stacks.iop.org/1347-4065/55/i=11/a=119201/pdf
http://stacks.iop.org/1347-4065/55/i=11/a=119201?key=crossref.331421e1b17c28885985c029c05c065a
https://iopscience.iop.org/article/10.7567/JJAP.55.119201
https://iopscience.iop.org/article/10.7567/JJAP.55.119201/pdf

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14

Academic Journal

Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

المؤلفون: Shiojima, Kenji, Tanaka, Ryo, Takashima, Shinya, Ueno, Katsunori, Edo, Masaharu

المساهمون: Ministry of Education, Culture, Sports, Science and Technology

المصدر: Japanese Journal of Applied Physics ; volume 60, issue 5, page 056503 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.35848/1347-4065/abf5ab
https://iopscience.iop.org/article/10.35848/1347-4065/abf5ab
https://iopscience.iop.org/article/10.35848/1347-4065/abf5ab/pdf

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15

Patent

Filtered cathodic arc device and carbon protective film deposited using the device

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16

Patent

Securing clip

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17

Academic Journal

Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes

المؤلفون: Chen, Jun, Yi, Wei, Kumar, Ashutosh, Iwanade, Akio, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Ito, Shun, Kimura, Takashi, Ohkubo, Tadakatsu, Sekiguchi, Takashi

المصدر: Journal of Electronic Materials ; volume 49, issue 9, page 5196-5204 ; ISSN 0361-5235 1543-186X

الاتاحة: http://dx.doi.org/10.1007/s11664-020-08081-2
http://link.springer.com/content/pdf/10.1007/s11664-020-08081-2.pdf
http://link.springer.com/article/10.1007/s11664-020-08081-2/fulltext.html

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18

Academic Journal

Demonstration of 1200 V/1.4 mΩ cm 2 vertical GaN planar MOSFET fabricated by an all ion implantation process

المؤلفون: Tanaka, Ryo, Takashima, Shinya, Ueno, Katsunori, Matsuyama, Hideaki, Edo, Masaharu

المصدر: Japanese Journal of Applied Physics ; volume 59, issue SG, page SGGD02 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.7567/1347-4065/ab6347
https://iopscience.iop.org/article/10.7567/1347-4065/ab6347
https://iopscience.iop.org/article/10.7567/1347-4065/ab6347/pdf

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19

Academic Journal

Mg diffusion and activation along threading dislocations in GaN

المؤلفون: Yi, Wei, Kumar, Ashutosh, Uzuhashi, Jun, Kimura, Takashi, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Yao, Yongzhao, Ishikawa, Yukari, Chen, Jun, Ohkubo, Tadakatsu, Sekiguchi, Takashi, Hono, Kazuhiro

المساهمون: Ministry of Education, Culture, Sports, Science and Technology

المصدر: Applied Physics Letters ; volume 116, issue 24 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/5.0009596
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0009596/13288404/242103_1_online.pdf

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20

Academic Journal

Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

المؤلفون: Tanaka, Ryo, Takashima, Shinya, Ueno, Katsunori, Matsuyama, Hideaki, Edo, Masaharu, Nakagawa, Kiyokazu

المصدر: Applied Physics Express ; volume 12, issue 5, page 054001 ; ISSN 1882-0778 1882-0786

الاتاحة: http://dx.doi.org/10.7567/1882-0786/ab0c2c
http://iopscience.iop.org/article/10.7567/1882-0786/ab0c2c
http://iopscience.iop.org/article/10.7567/1882-0786/ab0c2c/pdf
http://stacks.iop.org/1882-0786/12/i=5/a=054001/pdf
http://stacks.iop.org/1882-0786/12/i=5/a=054001?key=crossref.1b4292aacd2e26a788c28ea0c14ad731

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