يعرض 1 - 6 نتائج من 6 نتيجة بحث عن '"Takaishi Riichiro"', وقت الاستعلام: 0.35s تنقيح النتائج
  1. 1
    Academic Journal
    Consideration for the process dependence of electrical characteristics by the structural analysis of the ferroelectric HfSiO film using FT-IR method / FT-IR法を用いた強誘電性HfSiO膜の構造解析による電気特性のプロセス依存性に対する考察

    المؤلفون: Ino Tsunehiro, Koyama Masato, Nakasaki Yasushi, Saitoh Masumi, Shosuke Fujii, Takaishi Riichiro, Yuichi Kamimuta, 上牟田 雄一, 中崎 靖, 井野 恒洋, 小山 正人, 藤井 章輔, 高石 理一郎, 齋藤 真澄

    المصدر: JSAP Annual Meetings Extended Abstracts. 2016, :2912

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  2. 2
    Academic Journal
    Depth characterization of chemical states in GeSn thin film by HAXPES / 硬X線光電子分光法（HAXPES）によるゲルマニウムスズ薄膜の深さ方向化学結合状態評価

    المؤلفون: Koji Usuda, Ogura Atsushi, Suda Kohei, Takaishi Riichiro, Tomita Mitsuhiro, Yoshiki Masahiko, 吉木 昌彦, 富田 充裕, 小椋 厚志, 臼田 宏治, 須田 耕平, 高石 理一郎

    المصدر: JSAP Annual Meetings Extended Abstracts. 2015, :3203

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  3. 3
    Academic Journal
    Individual analysis of inter and intragrain defects in electrically characterized polycrystalline silicon nanowire TFTs by multicomponent dark-field imaging based on nanobeam electron diffraction two-dimensional mapping

    المؤلفون: Asano, Takanori, Takaishi, Riichiro, Oda, Minoru, Sakuma, Kiwamu, Saitoh, Masumi, Tanaka, Hiroki

    المصدر: Japanese Journal of Applied Physics ; volume 57, issue 4S, page 04FD20 ; ISSN 0021-4922 1347-4065

    الاتاحة: http://dx.doi.org/10.7567/jjap.57.04fd20
    http://stacks.iop.org/1347-4065/57/i=4S/a=04FD20/pdf
    http://stacks.iop.org/1347-4065/57/i=4S/a=04FD20?key=crossref.79404f0cc161fa734b718bf14e1d63be

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  4. 4
    Conference
    Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system

    المؤلفون: Higashi, Yusuke, Takaishi, Riichiro, Suzuki, Masamichi, Nakasaki, Yasushi, Tomita, Mitsuhiro, Mitani, Yuichiro, Matsumoto, Masuaki, Kato, Koichi, Ogura, Shohei, Fukutani, Katsuyuki

    المصدر: 2016 IEEE International Reliability Physics Symposium (IRPS) ; page 7B-2-1-7B-2-7

    الاتاحة: http://dx.doi.org/10.1109/irps.2016.7574578
    http://xplorestaging.ieee.org/ielx7/7565237/7574493/07574578.pdf?arnumber=7574578

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  5. 5
    Conference
    First demonstration and performance improvement of ferroelectric HfO 2 -based resistive switch with low operation current and intrinsic diode property

    المؤلفون: Fujii, Shosuke, Kamimuta, Yuuichi, Ino, Tsunehiro, Nakasaki, Yasushi, Takaishi, Riichiro, Saitoh, Masumi

    المصدر: 2016 IEEE Symposium on VLSI Technology ; page 1-2

    الاتاحة: http://dx.doi.org/10.1109/vlsit.2016.7573413
    http://xplorestaging.ieee.org/ielx7/7569798/7573353/07573413.pdf?arnumber=7573413

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  6. 6
    Academic Journal
    Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

    المؤلفون: Higashi, Yusuke, Takaishi, Riichiro, Kato, Koichi, Suzuki, Masamichi, Nakasaki, Yasushi, Tomita, Mitsuhiro, Mitani, Yuichiro, Matsumoto, Masuaki, Ogura, Shohei, Fukutani, Katsuyuki, Yamabe, Kikuo

    المصدر: Microelectronics Reliability ; volume 70, page 12-21 ; ISSN 0026-2714

    الاتاحة: http://dx.doi.org/10.1016/j.microrel.2017.01.011
    https://api.elsevier.com/content/article/PII:S0026271417300173?httpAccept=text/plain
    https://api.elsevier.com/content/article/PII:S0026271417300173?httpAccept=text/xml

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