المؤلفون: V. P. Krylov, A. M. Bogachev, T. Yu. Pronin

المصدر: Радиопромышленность, Vol 29, Iss 2, Pp 35-44 (2019)

مصطلحات موضوعية: semiconductor components, potential defect, deep level transient spectroscopy, frequency scanning, Electronics, TK7800-8360

Relation: https://www.radioprom.org/jour/article/view/486; https://doaj.org/toc/2413-9599; https://doaj.org/toc/2541-870X; https://doaj.org/article/e758ba0d199445399cb85a03e0f2c9a7

الاتاحة: https://doi.org/10.21778/2413-9599-2019-29-2-35-44
https://doaj.org/article/e758ba0d199445399cb85a03e0f2c9a7