المؤلفون: Chen SC, Chang TC, Chen WR, Lo YC, Wu KT, Sze SM, Chen J, Liao IH, Yeh FS

المساهمون: 葉鳳生

مصطلحات موضوعية: Nonvolatile, Nanocrystals, Memory, Oxygen, Plasma

Time: 45

Relation: Thin Solid Films, Elsevier, Volume 518, Issue 24, 1 October 2010, Pages 7339-7342; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72678

الاتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72678

المؤلفون: Hu CW, Chang TC, Tu CH, Huang YH, Lin CC, Chen MC, Huang FS, Sze SM, Tseng TY

المساهمون: 葉鳳生

مصطلحات موضوعية: nanofabrication, nanostructured materials, nickel, random-access storage, rapid thermal annealing, reliability, transmission electron microscopy, vacuum deposition, X-ray photoelectron spectra

Time: 45

Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS, Electrochemical Society, Volume 13, Issue 3, 2010, Pages H49-H51; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72668

الاتاحة: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/72668

المؤلفون: Chang, TC, Liu, PT, Yan, ST, Yang, FM, Sze, SM

المساهمون: 電子工程學系及電子研究所, 光電工程學系, Department of Electronics Engineering and Institute of Electronics, Department of Photonics

Relation: http://hdl.handle.net/11536/25434; http://dx.doi.org/10.1149/1.1850859; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; WOS:000227142400066

الاتاحة: http://hdl.handle.net/11536/25434
https://doi.org/10.1149/1.1850859

المؤلفون: Chang, TC, Liu, PT, Yan, ST, Sze, SM

المساهمون: 電子工程學系及電子研究所, 光電工程學系, Department of Electronics Engineering and Institute of Electronics, Department of Photonics

Relation: http://hdl.handle.net/11536/24437; http://dx.doi.org/10.1149/1.1859674; ELECTROCHEMICAL AND SOLID STATE LETTERS; WOS:000228326400023

الاتاحة: http://hdl.handle.net/11536/24437
https://doi.org/10.1149/1.1859674

المؤلفون: CHAN, SH, CHANG, CY, SZE, SM

المساهمون: 交大名義發表, 電子工程學系及電子研究所, National Chiao Tung University, Department of Electronics Engineering and Institute of Electronics

Relation: http://dx.doi.org/10.1016/0022-0248(94)91178-9; http://hdl.handle.net/11536/2225; JOURNAL OF CRYSTAL GROWTH; WOS:A1994QC54300159

الاتاحة: http://hdl.handle.net/11536/2225
https://doi.org/10.1016/0022-0248(94)91178-9

المؤلفون: Chang, TC, Yan, ST, Liu, PT, Chen, CW, Wu, HH, Sze, SM

المساهمون: 電子工程學系及電子研究所, 光電工程學系, 顯示科技研究所, Department of Electronics Engineering and Institute of Electronics, Department of Photonics, Institute of Display

Relation: http://hdl.handle.net/11536/27248; http://dx.doi.org/10.1149/1.1808634; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; WOS:000225068500062

الاتاحة: http://hdl.handle.net/11536/27248
https://doi.org/10.1149/1.1808634

المؤلفون: Chang, TC, Yan, ST, Chen, YT, Liu, PT, Sze, SM

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

Relation: http://hdl.handle.net/11536/27154; http://dx.doi.org/10.1149/1.1804952; ELECTROCHEMICAL AND SOLID STATE LETTERS; WOS:000228539900036

الاتاحة: http://hdl.handle.net/11536/27154
https://doi.org/10.1149/1.1804952

المؤلفون: Chang, TC, Yan, ST, Liu, PT, Chen, CW, Lin, SH, Sze, SM

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

Relation: http://dx.doi.org/10.1149/1.1627453; http://hdl.handle.net/11536/27151; ELECTROCHEMICAL AND SOLID STATE LETTERS; WOS:000186902300022

الاتاحة: http://hdl.handle.net/11536/27151
https://doi.org/10.1149/1.1627453

المؤلفون: Chang, TC, Yan, ST, Liu, PT, Chen, CW, Wu, YC, Sze, SM

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

Relation: http://hdl.handle.net/11536/27148; http://dx.doi.org/10.1149/1.1695537; ELECTROCHEMICAL AND SOLID STATE LETTERS; WOS:000221887500019

الاتاحة: http://hdl.handle.net/11536/27148
https://doi.org/10.1149/1.1695537

المؤلفون: Chang, TC, Yan, ST, Liu, R, Lin, ZW, Aoki, H, Sze, SM

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

مصطلحات موضوعية: MSZ, low-k, thermal stress, bias temperature stress, Schottky emission, space charge limited current

Relation: http://dx.doi.org/10.1016/j.tsf.2003.07.014; http://hdl.handle.net/11536/27114; THIN SOLID FILMS; WOS:000188995700090

الاتاحة: http://hdl.handle.net/11536/27114
https://doi.org/10.1016/j.tsf.2003.07.014

المؤلفون: Chang, TC, Yan, ST, Hsu, CH, Tang, MT, Lee, JF, Tai, YH, Liu, PT, Sze, SM

المساهمون: 電子工程學系及電子研究所, 光電工程學系, Department of Electronics Engineering and Institute of Electronics, Department of Photonics

Relation: http://dx.doi.org/10.1063/1.1697627; http://hdl.handle.net/11536/26879; APPLIED PHYSICS LETTERS; WOS:000220586800037

الاتاحة: http://hdl.handle.net/11536/26879
https://doi.org/10.1063/1.1697627

المؤلفون: Chang, TC, Tsai, TM, Liu, PT, Yan, ST, Chang, YC, Aoki, H, Sze, SM, Tseng, TY

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

Relation: http://hdl.handle.net/11536/26824; JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B; WOS:000222481400056

الاتاحة: http://hdl.handle.net/11536/26824

المؤلفون: Chang, TC, Yan, ST, Liu, PT, Chen, CW, Wu, HH, Sze, SM

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

Relation: http://dx.doi.org/10.1063/1.1739514; http://hdl.handle.net/11536/26788; APPLIED PHYSICS LETTERS; WOS:000221062500085

الاتاحة: http://hdl.handle.net/11536/26788
https://doi.org/10.1063/1.1739514

المؤلفون: Chang, TC, Yan, ST, Liu, PT, Chen, CW, Wu, HH, Sze, SM

المساهمون: 電子工程學系及電子研究所, 光電工程學系, 顯示科技研究所, Department of Electronics Engineering and Institute of Electronics, Department of Photonics, Institute of Display

Relation: http://dx.doi.org/10.1063/1.1772873; http://hdl.handle.net/11536/26568; APPLIED PHYSICS LETTERS

الاتاحة: http://hdl.handle.net/11536/26568
https://doi.org/10.1063/1.1772873

المؤلفون: Chang, TC, Yan, ST, Liu, PT, Wang, MC, Sze, SM

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

Relation: http://hdl.handle.net/11536/27263; http://dx.doi.org/10.1149/1.1738473; ELECTROCHEMICAL AND SOLID STATE LETTERS; WOS:000221887600020

الاتاحة: http://hdl.handle.net/11536/27263
https://doi.org/10.1149/1.1738473

المؤلفون: Chang, TC, Yan, ST, Yang, FM, Liu, PT, Sze, SM

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

Relation: http://dx.doi.org/10.1063/1.1675924; http://hdl.handle.net/11536/26940; APPLIED PHYSICS LETTERS; WOS:000220268500028

الاتاحة: http://hdl.handle.net/11536/26940
https://doi.org/10.1063/1.1675924

المؤلفون: Liu, PT, Chang, TC, Yan, ST, Li, CH, Sze, SM

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

Relation: http://dx.doi.org/10.1149/1.1535204; http://hdl.handle.net/11536/28128; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; WOS:000180517000043

الاتاحة: http://hdl.handle.net/11536/28128
https://doi.org/10.1149/1.1535204

المؤلفون: Li, YM, Lee, JW, Sze, SM

المساهمون: 電子工程學系及電子研究所, 友訊交大聯合研發中心, Department of Electronics Engineering and Institute of Electronics, D Link NCTU Joint Res Ctr

مصطلحات موضوعية: ESD protection device, anti-punch-through implant, electron temperature, 2D HD simulation

Relation: http://dx.doi.org/10.1143/JJAP.42.2152; http://hdl.handle.net/11536/28019; JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS; WOS:000183283700070

الاتاحة: http://hdl.handle.net/11536/28019
https://doi.org/10.1143/JJAP.42.2152

المؤلفون: Chang, TC, Chen, CW, Liu, PT, Mor, YS, Tsai, HM, Tsai, TM, Yan, ST, Tu, CH, Tseng, TY, Sze, SM

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

Relation: http://dx.doi.org/10.1149/1.1557032; http://hdl.handle.net/11536/27974; ELECTROCHEMICAL AND SOLID STATE LETTERS; WOS:000181148900011

الاتاحة: http://hdl.handle.net/11536/27974
https://doi.org/10.1149/1.1557032

المؤلفون: Li, YM, Lu, HM, Voskoboynikov, O, Lee, CP, Sze, SM

المساهمون: 交大名義發表, National Chiao Tung University

مصطلحات موضوعية: computer simulations, magnetic phenomena (cyclotron resonance, phase transitions, etc.), quantum effects, indium arsenide, gallium arsenide, heterojunctions

Relation: http://dx.doi.org/10.1016/S0039-6028(03)00171-7; http://hdl.handle.net/11536/27792; SURFACE SCIENCE; WOS:000183705900139

الاتاحة: http://hdl.handle.net/11536/27792
https://doi.org/10.1016/S0039-6028(03)00171-7