المؤلفون: Fauzi, Najihah, Firdaus, Amirul, Haocheng, Zhao, Ahmad, Mohd Anas, Kawarada, Hiroshi, Falina, Shaili, Syamsul, Mohd

المساهمون: Malaysia Ministry of Higher Education

المصدر: Surfaces and Interfaces ; volume 58, page 105806 ; ISSN 2468-0230

الاتاحة: https://doi.org/10.1016/j.surfin.2025.105806
https://api.elsevier.com/content/article/PII:S2468023025000690?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S2468023025000690?httpAccept=text/plain

المؤلفون: Yahya, Siti Hajjar, Al-Lolage, Firas A., Mahat, Mohd Muzamir, Ramli, Muhammad Zahir, Syamsul, Mohd, Falina, Shaili, Ahmad Ruzaidi, Dania Adila, Danial, Wan Hazman, Shafiee, Saiful Arifin

المساهمون: International Islamic University Malaysia

المصدر: RSC Advances ; volume 13, issue 47, page 32918-32926 ; ISSN 2046-2069

الاتاحة: http://dx.doi.org/10.1039/d3ra05592b
http://pubs.rsc.org/en/content/articlepdf/2023/RA/D3RA05592B

المؤلفون: Rahman, Kazi Faridur, Falina, Shaili, Mohamed, Mohamed Fauzi Packeer, Kawarada, Hiroshi, Syamsul, Mohd

المصدر: Applied Physics Reviews; Sep2024, Vol. 11 Issue 3, p1-45, 45p

مصطلحات موضوعية: BREAKDOWN voltage, INTERNAL combustion engines, GALLIUM nitride, ENERGY storage, MANUFACTURING processes

المؤلفون: Islam, Naeemul, Mohamed, Mohamed Fauzi Packeer, Khan, Firdaus Akbar Jalaludin, Ghazali, Nor Azlin, Kawarada, Hiroshi, Syamsul, Mohd, Rahim, Alhan Farhanah Abd, Manaf, Asrulnizam Abd

المصدر: Proceedings of the 12th International Conference on Robotics, Vision, Signal Processing and Power Applications ; Lecture Notes in Electrical Engineering ; page 133-139 ; ISSN 1876-1100 1876-1119 ; ISBN 9789819990047 9789819990054

الاتاحة: http://dx.doi.org/10.1007/978-981-99-9005-4_17
https://link.springer.com/content/pdf/10.1007/978-981-99-9005-4_17

المؤلفون: Abed, Shireen Mohammed, Mohammad, Sabah M., Hassan, Zainuriah, Muhammad, A., Ahmad, M.A., Syamsul, Mohd

المصدر: International Journal of Nanotechnology ; volume 21, issue 4/5, page 236-250 ; ISSN 1475-7435 1741-8151

الاتاحة: http://dx.doi.org/10.1504/ijnt.2024.141756
http://www.inderscienceonline.com/doi/full/10.1504/IJNT.2024.141756

المؤلفون: Fauzi, Najihah, Firdaus, Amirul, Falina, Shaili, Mohammad, Sabah M., Inaba, Masafumi, Kawarada, Hiroshi, Syamsul, Mohd

المصدر: International Journal of Nanotechnology ; volume 21, issue 4/5, page 226-235 ; ISSN 1475-7435 1741-8151

الاتاحة: http://dx.doi.org/10.1504/ijnt.2024.141755
http://www.inderscienceonline.com/doi/full/10.1504/IJNT.2024.141755

المؤلفون: Islam, Naeemul, Packeer Mohamed, Mohamed Fauzi, Abd Rahman, Siti Fatimah, Syamsul, Mohd, Kawarada, Hiroshi, Abd Rahim, Alhan Farhanah

المصدر: International Journal of Nanoelectronics & Materials; Apr2024, Vol. 17 Issue 2, p204-210, 7p

مصطلحات موضوعية: POWER semiconductors, GALLIUM nitride, BREAKDOWN voltage, THRESHOLD voltage, BUFFER layers, MODULATION-doped field-effect transistors

المؤلفون: Agi, Augustine, Junin, Radzuan, Syamsul, Mohd Faddli, Chong, Aik Shye, Gbadamosi, Afeez

المساهمون: Ministry of Higher Education (MOHE), MalaysiaMinistry of Higher Education (MOHE), Malaysia, Universiti Teknologi MalaysiaUniversiti Teknologi Malaysia (UTM)

المصدر: Petroleum ; volume 5, issue 1, page 42-51 ; ISSN 2405-6561

الاتاحة: http://dx.doi.org/10.1016/j.petlm.2018.03.012
https://api.elsevier.com/content/article/PII:S2405656117302109?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S2405656117302109?httpAccept=text/plain

المؤلفون: Kitabayashi, Yuya, Kudo, Takuya, Tsuboi, Hidetoshi, Yamada, Tetsuya, Xu, Dechen, Shibata, Masanobu, Matsumura, Daisuke, Hayashi, Yuya, Syamsul, Mohd, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

المساهمون: Grant-in-Aid for Fundamental Research S, JSPS, Advanced Low Carbon Technology Research and Development of Japan Science and Technology Agency

المصدر: IEEE Electron Device Letters ; volume 38, issue 3, page 363-366 ; ISSN 0741-3106 1558-0563

الاتاحة: https://doi.org/10.1109/led.2017.2661340
http://xplorestaging.ieee.org/ielx7/55/7862302/07837668.pdf?arnumber=7837668

المؤلفون: Falina, Shaili, Anuar, Khairu, Shafiee, Saiful Arifin, Juan, Joon Ching, Manaf, Asrulnizam Abd, Kawarada, Hiroshi, Syamsul, Mohd

مصطلحات موضوعية: TK Electrical engineering. Electronics Nuclear engineering, TP Chemical technology

Relation: Falina, Shaili and Anuar, Khairu and Shafiee, Saiful Arifin and Juan, Joon Ching and Manaf, Asrulnizam Abd and Kawarada, Hiroshi and Syamsul, Mohd (2022) Two-dimensional non-carbon materials-based electrochemical printed sensors: An updated review. Sensors, 22 (23). ISSN 1424-8220, DOI https://doi.org/10.3390/s22239358 .

الاتاحة: http://eprints.um.edu.my/40282/

المؤلفون: Falina, Shaili, Kawarada, Hiroshi, Manaf, Asrulnizam Abd, Syamsul, Mohd

المساهمون: Universiti Sains Malaysia (USM) Short Term, Grant-in- Aid for Fundamental Research S from Japan Society for the Promotion of Science, Advanced Low Carbon Technology Research and Development Program (ALCA) of Japanese Science and Technology Agency

المصدر: IEEE Electron Device Letters ; volume 43, issue 7, page 1101-1104 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2022.3175473
http://xplorestaging.ieee.org/ielx7/55/9811240/09775721.pdf?arnumber=9775721

المؤلفون: Fauzi, Najihah, Mohd Asri, Rahil Izzati, Mohamed Omar, Mohamad Faiz, Manaf, Asrulnizam Abd, Kawarada, Hiroshi, Falina, Shaili, Syamsul, Mohd

المصدر: Micromachines; Feb2023, Vol. 14 Issue 2, p325, 33p

مصطلحات موضوعية: BIOSENSORS, MODULATION-doped field-effect transistors, TWO-dimensional electron gas, SURFACE charges

المؤلفون: Yusuf, Yusnizam, Samsudin, Muhammad Esmed Alif, Taib, Muhamad Ikram Md, Ahmad, Mohd Anas, Mohamed, Mohamed Fauzi Packeer, Kawarada, Hiroshi, Falina, Shaili, Zainal, Norzaini, Syamsul, Mohd

المصدر: Crystals (2073-4352); Jan2023, Vol. 13 Issue 1, p90, 9p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, GALLIUM nitride, BREAKDOWN voltage, HIGH voltages, JOB descriptions

المؤلفون: Haziq, Muhaimin, Falina, Shaili, Manaf, Asrulnizam Abd, Kawarada, Hiroshi, Syamsul, Mohd

المصدر: Micromachines; Dec2022, Vol. 13 Issue 12, p2133, 36p

مصطلحات موضوعية: ALUMINUM gallium nitride, MODULATION-doped field-effect transistors, GALLIUM nitride, FIELD-effect transistors, OHMIC contacts, OHMIC resistance

المؤلفون: Zulkifli, Zikri, Ali, Norshamsuri, Falina, Shaili, Kawarada, Hiroshi, Packeer Mohamed, Mohamed Fauzi, Syamsul, Mohd

المصدر: Key Engineering Materials; May 2023, Vol. 947 Issue: 1 p21-26, 6p

المؤلفون: Che Seliman, M.A., Ali Yusup, N.A., Ahmad, Mohd Anas, Ibau, C., Nuzaihan, Mohammad, Kawarada, Hiroshi, Hassan, Zainuriah, Packeer Mohamed, Mohamed Fauzi, Falina, Shaili, Syamsul, Mohd

المصدر: Key Engineering Materials; May 2023, Vol. 947 Issue: 1 p9-14, 6p

المؤلفون: Haziq, Muhaimin, Ali, Norshamsuri, Falina, Shaili, Kawarada, Hiroshi, Syamsul, Mohd

المصدر: Key Engineering Materials; May 2023, Vol. 947 Issue: 1 p15-20, 6p

المؤلفون: Hamid, Mohamad Hasnan Abdull, Mohd Asri, Rahil Izzati, Nuzaihan, Mohammad, Inaba, Masafumi, Hassan, Zainuriah, Kawarada, Hiroshi, Falina, Shaili, Syamsul, Mohd

المصدر: Key Engineering Materials; May 2023, Vol. 947 Issue: 1 p3-8, 6p

المؤلفون: Islam, Naeemul, Mohamed, Mohamed Fauzi Packeer, Khan, Muhammad Firdaus Akbar Jalaludin, Falina, Shaili, Kawarada, Hiroshi, Syamsul, Mohd

المصدر: Crystals (2073-4352); Nov2022, Vol. 12 Issue 11, p1581, 42p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, SERVER farms (Computer network management), METAL insulator semiconductors, GALLIUM nitride, BREAKDOWN voltage, ELECTRON mobility

المؤلفون: Arshad, Khairul Mohd, Noor, Muhamad Mat, Manaf, Asrulnizam Abd, Kawarada, Hiroshi, Falina, Shaili, Syamsul, Mohd

المصدر: Micromachines; Sep2022, Vol. 13 Issue 9, p1513-N.PAG, 15p

مصطلحات موضوعية: STRAINS & stresses (Mechanics), PACKAGING, MATERIALS testing, THERMOCYCLING, THERMODYNAMIC cycles, PACKAGING materials