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1Report
المؤلفون: Huang Y (Huang Y.), Wang H (Wang H.), Sun Q (Sun Q.), Chen J (Chen J.), Li DY (Li D. Y.), Zhang JC (Zhang J. C.), Wang JF (Wang J. F.), Wang YT (Wang Y. T.), Yang H (Yang H.), Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn
مصطلحات موضوعية: Growth Mode, X-ray Diffraction, Metalorganic Chemical Vapor Deposition, Indium Nitride, X-ray-diffraction, Threading Dislocations, Electron-transport, Buffer Layer, Thin-films, Gan Films, Sapphire, Aln, 光电子学, x-ray crystallography, metal organic chemical vapor deposition, charge exchange, thin films, aluminum oxide, x射线衍射, x ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung
Relation: JOURNAL OF CRYSTAL GROWTH; Huang Y (Huang Y.); Wang H (Wang H.); Sun Q (Sun Q.); Chen J (Chen J.); Li DY (Li D. Y.); Zhang JC (Zhang J. C.); Wang JF (Wang J. F.); Wang YT (Wang Y. T.); Yang H (Yang H.) .Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,2006 ,293(2):269-272; http://ir.semi.ac.cn/handle/172111/10452
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2Report
المؤلفون: Wang H (Wang H.), Huang Y (Huang Y.), Sun Q (Sun Q.), Chen J (Chen J.), Wang LL (Wang L. L.), Zhu JJ (Zhu J. J.), Zhao DG (Zhao D. G.), Zhang SM (Zhang S. M.), Jiang DS (Jiang D. S.), Wang YT (Wang Y. T.), Yang H (Yang H.), Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn
مصطلحات موضوعية: X-ray-diffraction, Electron-transport, Epitaxial Gan, Band-gap, Dislocations, Sapphire, Aln, 光电子学, x-ray crystallography, charge exchange, energy bands, aluminum oxide, x射线衍射, x ray diffraction, x-ray diffraction, borrmann effect, debye-scherrer cameras, laue effect, patterson diagrams, pendellosung fringes, radiocrystallography, weissenberg cameras, xrd, diffraction des rayons x, roentenbeugung, roentgenbeugung, x ray crystallography, xray diffraction, ｘ射线晶体学, x ray diffractometers
Relation: APPLIED PHYSICS LETTERS; Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.) .Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition ,APPLIED PHYSICS LETTERS,2006 ,89(9):Art.No.092114; http://ir.semi.ac.cn/handle/172111/10432
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3Report
المؤلفون: Sun, Q (Sun, Q.), Wang, H (Wang, H.), Jiang, DS (Jiang, D. S.), Jin, RQ (Jin, R. Q.), Huang, Y (Huang, Y.), Zhang, SM (Zhang, S. M.), Yang, H (Yang, H.), Jahn, U (Jahn, U.), Ploog, KH (Ploog, K. H.), Sun, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
مصطلحات موضوعية: Light-emitting-diodes, 光电子学, light emitting diodes, leds (light emitting diodes), led, organic light emitting diodes, oled, polymer led, superluminescent diodes, led (diodes), light-emitting diodes, leds, organic led, light emitting diode
Relation: JOURNAL OF APPLIED PHYSICS; Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.) .Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer ,JOURNAL OF APPLIED PHYSICS,DEC 15 2006,100 (12):Art.No.123101; http://ir.semi.ac.cn/handle/172111/9726