المؤلفون: Bhaskar Awadhiya, Rahul Ratnakumar, Sampath Kumar, Sameer Yadav, Kaushal Nigam, Yashwanth Nanjappa, P.N. Kondekar

المصدر: Heliyon, Vol 10, Iss 11, Pp e32325- (2024)

مصطلحات موضوعية: Junction less transistor (JLT), Radio frequency integrated circuits (RFICs), Subthreshold slope (SS), Technology computer aided design (TCAD), Science (General), Q1-390, Social sciences (General), H1-99

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2405844024083567; https://doaj.org/toc/2405-8440

URL الوصول: https://doaj.org/article/25a24d0a69544d0788885344e03e6fcc

المؤلفون: Mohammad Kamali Moghaddam, Ehsan Koushki

المصدر: Progress in Physics of Applied Materials, Vol 4, Iss 2, Pp 109-114 (2024)

مصطلحات موضوعية: bandgap, subthreshold slope, ion-ioff current ratio, npn transistor, Science

Relation: https://ppam.semnan.ac.ir/article_8846_9be855a3c67e91846f607f6448574636.pdf; https://doaj.org/toc/2783-4794; https://doaj.org/article/b8334eedb62442ddb0f03762369935bf

الاتاحة: https://doi.org/10.22075/ppam.2024.34215.1105
https://doaj.org/article/b8334eedb62442ddb0f03762369935bf

المؤلفون: Shailendra Singh, Suneet Kumar Agnihotri, Navjeet Bagga, Dip Prakash Samajdar

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Microbiology, Genetics, Neuroscience, Biotechnology, Cancer, Infectious Diseases, Plant Biology, Space Science, Environmental Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, vertical tunnel field, various electrical properties, source channel junction, ferroelectric gate oxide, electric field (<, decreased subthreshold slope, channel voltage increases, charge density (<, narrow band gap, drain current (<, band tunneling based, free biosensing applications, sige heterojunction pocket, band tunneling, biosensing applications, pocket doping, charge carriers

Relation: https://figshare.com/articles/journal_contribution/Assessment_of_the_Biosensing_Capabilities_of_SiGe_Heterojunction_Negative_Capacitance-Vertical_Tunnel_Field-Effect_Transistor/25012592

الاتاحة: https://doi.org/10.1021/acsabm.3c00738.s001
https://figshare.com/articles/journal_contribution/Assessment_of_the_Biosensing_Capabilities_of_SiGe_Heterojunction_Negative_Capacitance-Vertical_Tunnel_Field-Effect_Transistor/25012592

المؤلفون: Srivastava, Pooja, Upadhyaya, Aditi, Yadav, Shekhar, Negi, C.M.S.

المصدر: Semiconductor Science and Information Devices; Vol. 5 , Iss. 2 (October 2023); 1-10 ; 2661-3212

مصطلحات موضوعية: Short channel effects, Drain-induced barrier lowering, Subthreshold slope, Gate-all-around junction less FET, Device simulation

وصف الملف: application/pdf

Relation: https://journals.bilpubgroup.com/index.php/ssid/article/view/6075/5088; https://journals.bilpubgroup.com/index.php/ssid/article/view/6075

الاتاحة: https://journals.bilpubgroup.com/index.php/ssid/article/view/6075

المؤلفون: Dariush Madadi, Saeed Mohammadi

المصدر: Discover Nano, Vol 18, Iss 1, Pp 1-14 (2023)

مصطلحات موضوعية: InAs–Si heterojunction, Gate-all-around, Vertical TFET, Subthreshold slope, Triple metal gate, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2731-9229

URL الوصول: https://doaj.org/article/216a4aab0f2c429dad7c09ee828089fc

المؤلفون: Anuj Bhardwaj, Sujit. K. Singh, Abhisek Dixit

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 22-29 (2023)

مصطلحات موضوعية: Cryogenic temperatures, fully depleted silicon on insulator (FD-SOI), MOSFET, subthreshold slope, cryogenic-CMOS behavior, narrow-width-effect, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10004218/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/e35360b0937e4a388874b41841b4ce5a

المؤلفون: Meisam Rahmani, Hassan Ghafoorifard, Mohammad Taghi Ahmadi

المصدر: Micromachines; Volume 14; Issue 1; Pages: 184

مصطلحات موضوعية: GNS, MSM contacts, FET, surface potential, subthreshold slope, DIBL, current-voltage characteristic

وصف الملف: application/pdf

Relation: E：Engineering and Technology; https://dx.doi.org/10.3390/mi14010184

الاتاحة: https://doi.org/10.3390/mi14010184

المؤلفون: Susanna Yu, Marvin H. White, Anant K. Agarwal

المصدر: IEEE Access, Vol 9, Pp 149118-149124 (2021)

مصطلحات موضوعية: Silicon carbide (SiC), power MOSFET, oxide reliability, interface trap density, oxide charge, subthreshold slope, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9597510/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/139bcc50ed04403e87e1cbfc5d812f11

المؤلفون: Thales Augusto Ribeiro, Sylvain Barraud, Marcelo Antonio Pavanello

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 492-499 (2021)

مصطلحات موضوعية: Threshold voltage, subthreshold slope, carrier mobility, high temperature, junctionless, nanowires, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9321370/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/571b117f50df4891b0c1000a886fe711

المؤلفون: Wadhwa G., Srivastava N., Sreenivasulu V. B., Proto A.

المساهمون: Wadhwa, G., Srivastava, N., Sreenivasulu, V. B., Proto, A.

مصطلحات موضوعية: ambipolarity, low supply voltage, Subthreshold Slope, VTFET

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/9798350390728; ispartofbook:2024 IEEE 3rd International Conference on Electrical Power and Energy Systems, ICEPES 2024; 3rd IEEE International Conference on Electrical Power and Energy Systems, ICEPES 2024; volume:67; firstpage:1; lastpage:6; numberofpages:6; https://hdl.handle.net/11392/2566831

الاتاحة: https://hdl.handle.net/11392/2566831
https://doi.org/10.1109/ICEPES60647.2024.10653597

المؤلفون: Avedillo de Juan, María José, Núñez Martínez, Juan

المساهمون: Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo, Ministerio de Economía y Competitividad (MINECO). España, European Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER)

مصطلحات موضوعية: Tunnel transistors, Steep subthreshold slope, Low power, Concurrency, Pipelining, Parallelism

Relation: International Journal of Circuit Theory and Applications, 46 (3), 647-655.; TEC2013‐40670‐P; https://dx.doi.org/10.1002/cta.2398; https://idus.us.es/handle//11441/135115

الاتاحة: https://idus.us.es/handle//11441/135115

المؤلفون: Avedillo de Juan, María José, Jiménez, Manuel, Núñez Martínez, Juan

المساهمون: Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo, Ministerio de Economía y Competitividad (MINECO). España, European Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER)

مصطلحات موضوعية: Steep subthreshold slope, Phase transition materials, Low voltage, Dynamic logic, Keeper transistor

وصف الملف: application/pdf

Relation: IEEE Electron Device Letters, 39 (11), 8471107.; TEC2017-87052-P; https://dx.doi.org/10.1109/LED.2018.2871855; https://idus.us.es/handle//11441/135121

الاتاحة: https://idus.us.es/handle//11441/135121

المؤلفون: Jiao, Tom, Wong, Hiu Yung

المصدر: Faculty Research, Scholarly, and Creative Activity

مصطلحات موضوعية: Ab initio, Cryogenic electronics, Nanowire, Quantum transport, Subthreshold slope, Electrical Engineering

وصف الملف: application/pdf

Relation: https://scholarworks.sjsu.edu/faculty_rsca/2043; https://scholarworks.sjsu.edu/context/faculty_rsca/article/3042/viewcontent/Robust_20cryogenic_20ab_initio_20quantum_20transport_20simulation_20for_20LG_20_3D_2010_20nm_20nanowire.pdf

الاتاحة: https://scholarworks.sjsu.edu/faculty_rsca/2043
https://doi.org/10.1016/j.sse.2022.108440
https://scholarworks.sjsu.edu/context/faculty_rsca/article/3042/viewcontent/Robust_20cryogenic_20ab_initio_20quantum_20transport_20simulation_20for_20LG_20_3D_2010_20nm_20nanowire.pdf

المؤلفون: Toshiya Sakata

المصدر: Sensors; Volume 22; Issue 13; Pages: 4991

مصطلحات موضوعية: biosensing, potentiometric biosensor, biologically coupled gate field-effect transistor (Bio-FET), ionic and biomolecular charge, Debye length, measurement solution, pH response, subthreshold slope, semiconductive material, integrated device

وصف الملف: application/pdf

Relation: Biosensors; https://dx.doi.org/10.3390/s22134991

الاتاحة: https://doi.org/10.3390/s22134991

المؤلفون: Han, Daxin, id_orcid:0 000-0002-0301-5211, Bonomo, Giorgio, id_orcid:0 000-0002-1419-1069, Calvo Ruiz, Diego, id_orcid:0 000-0001-6170-6427, Arabhavi, Akshay Mahadev, Ostinelli, Olivier J.S., Bolognesi, Colombo R.

المصدر: IEEE Transactions on Electron Devices, 69 (7)

مصطلحات موضوعية: Atomic layer deposition (ALD), GaInAs, impact ionization, impact ionization MOSFET (I-MOS), inverse subthreshold slope (SS), MOSFET, RF performance, steep slope

وصف الملف: application/application/pdf

Relation: info:eu-repo/semantics/altIdentifier/wos/000799572400001; http://hdl.handle.net/20.500.11850/547202

الاتاحة: https://hdl.handle.net/20.500.11850/547202
https://doi.org/10.3929/ethz-b-000547202

المؤلفون: Han, Daxin, id_orcid:0 000-0002-0301-5211, Bonomo, Giorgio, id_orcid:0 000-0002-1419-1069, Calvo Ruiz, Diego, id_orcid:0 000-0001-6170-6427, Arabhavi, Akshay Mahadev, Ostinelli, Olivier J.S., Bolognesi, Colombo R.

المصدر: IEEE Transactions on Electron Devices, 69 (7)

مصطلحات موضوعية: Atomic layer deposition (ALD), GaInAs, I-MOS, impact ionization, inverse subthreshold slope (SS), MOSFET, RF performance, steep slope

وصف الملف: application/application/pdf

Relation: info:eu-repo/semantics/altIdentifier/wos/000795576800001; http://hdl.handle.net/20.500.11850/547203

الاتاحة: https://hdl.handle.net/20.500.11850/547203
https://doi.org/10.3929/ethz-b-000547203

المؤلفون: Shanbhag, Ajay, Medjdoub, F, Chakravorty, Anjan, Dasgupta, Nandita, Dasgupta, Amitava

المساهمون: Indian Institute of Technology Madras (IIT Madras), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), The authors would like to thank Centre for NEMS and Nanophotonics (CNNP), IIT Madras and Science and Engineering Research Board (SERB),Govt. of India vide project no.CRG/2018/001081 for partial financial support and Veeco Instruments Inc. for providing the GaN wafers for experimental purposes., projet DGA GREAT, Renatech Network, PCMP CHOP

المصدر: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
https://hal.science/hal-03421537
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Dec 2021, Monterey, CA, virtual, United States. ⟨10.1109/BCICTS50416.2021.9682203⟩

مصطلحات موضوعية: AlGaN-GaN HEMTs, AlInN-GaN HEMTs, breakdown voltage, buffer traps, C-doping, subthreshold slope, transit frequency, [SPI]Engineering Sciences [physics]

جغرافية الموضوع: Monterey, CA, virtual, United States

Relation: hal-03421537; https://hal.science/hal-03421537; https://hal.science/hal-03421537/document; https://hal.science/hal-03421537/file/Ajay_BCICTS_2021.pdf

الاتاحة: https://hal.science/hal-03421537
https://hal.science/hal-03421537/document
https://hal.science/hal-03421537/file/Ajay_BCICTS_2021.pdf
https://doi.org/10.1109/BCICTS50416.2021.9682203

المؤلفون: Hyo-Jin Lee, Seong-Tae Han, Jong-Ryul Yang

المصدر: IEEE Access, Vol 8, Pp 215840-215850 (2020)

مصطلحات موضوعية: Body biasing, CMOS plasmon detector, high sensitivity, image SNR, negative body potential, subthreshold slope, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9272357/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/df8e87ee6b7e4a44a016db10818f0140

المؤلفون: KUMAR P. LONDHE, DR. Y. V. CHAVAN

المصدر: International Journal of Innovations in Engineering Research and Technology; 2016: ICITER; 1-4 ; 2394-3696

مصطلحات موضوعية: Double-gate junctionless transistor, scaling, subthreshold slope

وصف الملف: application/pdf

Relation: https://repo.ijiert.org/index.php/ijiert/article/view/1266/1194; https://repo.ijiert.org/index.php/ijiert/article/view/1266

الاتاحة: https://repo.ijiert.org/index.php/ijiert/article/view/1266

المؤلفون: Toshiya Sakata (2502937), Shoichi Nishitani (5236658), Akiko Saito (574853), Yuta Fukasawa (11238358)

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Neuroscience, Physiology, Biotechnology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Solution-Gated Ultrathin Channel In., 1 month, subthreshold regime, chemical modification, ultrahigh sensitivity, solution-gated 20- nm-thick channel., ITO channel surface, 2 D materials, biomolecular recognition, thin-film sheet, One-Step Procedure, Enables High-Performance Ion, metal shadow mask, oxidated surface, subthreshold slope, double-layer capacitance, ITO films, SS, ultrathin ITO channel, pH sensitivity, glass substrate

Relation: https://figshare.com/articles/journal_contribution/Solution-Gated_Ultrathin_Channel_Indium_Tin_Oxide-Based_Field-Effect_Transistor_Fabricated_by_a_One-Step_Procedure_that_Enables_High-Performance_Ion_Sensing_and_Biosensing/15121276

الاتاحة: https://doi.org/10.1021/acsami.1c05830.s001