المؤلفون: Miranda, E., Piros, E., Aguirre, F. L., Kim, T., Schreyer, P., Gehrunger, J., Schwarz, T., Oster, T., Hofmann, K., Suñé, J., Hochberger, C., Alff, L.

المساهمون: European-Metrology Programme for Innovation and Research (EMPIR) Program, Ministerio de Ciencia e Investigación, Spain, Technische Universität Darmstadt (TUD) Research Fellowship Program

المصدر: IEEE Electron Device Letters ; volume 45, issue 4, page 582-585 ; ISSN 0741-3106 1558-0563

الاتاحة: https://doi.org/10.1109/led.2024.3368146
http://xplorestaging.ieee.org/ielx7/55/10479122/10440618.pdf?arnumber=10440618

المؤلفون: Aguirre, F. L., Piros, E., Kaiser, N., Vogel, T., Petzold, S., Gehrunger, J., Hochberger, C., Oster, T., Hofmann, K., Suñé, J., Miranda, E., Alff, L.

المساهمون: Technische Universität Darmstadt

المصدر: Scientific Reports ; volume 14, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/s41598-023-49924-2
https://www.nature.com/articles/s41598-023-49924-2.pdf
https://www.nature.com/articles/s41598-023-49924-2

المؤلفون: Miranda, E., Suñé, J.

المساهمون: Ministerio de Ciencia e Innovaci?n

المصدر: IEEE Electron Device Letters ; volume 45, issue 10, page 2029-2032 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2024.3442818
http://xplorestaging.ieee.org/ielx8/55/10701574/10634563.pdf?arnumber=10634563

المؤلفون: Suñé, J., Bargalló-González, M., Saludes, M., Campabadal, F., Miranda, E.

المساهمون: Ministerio de Ciencia, Innovación y Universidades (MCIN)/Agencia Española de Investigación (AEI)/10, Generalitat de Catalunya-Agència de Gestió d’Ajudes Universitàries i d’Investigació, Project SGR 2021, European Metrology Programme for Innovation and Research (EMPIR) Program, Participating States and European Union’s Horizon 2020 Program, Consejo Superior de Investigaciones CientC-ficas (CSIC) funding through, MCIN/AEI/10, “European Social Fund (ESF) Investing in your future”, CSIC funding through

المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 8, page 4649-4654 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2024.3414370
http://xplorestaging.ieee.org/ielx8/16/10609410/10566584.pdf?arnumber=10566584

المؤلفون: Miranda, E., Aguirre, F. L., Saludes, Mercedes, Gonzalez, Mireia, Campabadal, Francesca, Sune, J.

المساهمون: orcid

مصطلحات موضوعية: Antifuse cell | memory | one-time programmable | oxide breakdown | quantum conductance unit

Relation: #PLACEHOLDER_PARENT_METADATA_VALUE#; info:eu-repo/grantAgreement/RYC2020-030150-I; IEEE Electron Device Letters; Preprint; https://ieeexplore.ieee.org/document/10121174; Sí; http://hdl.handle.net/10261/352933; 2-s2.0-85159804834; https://api.elsevier.com/content/abstract/scopus_id/85159804834

الاتاحة: http://hdl.handle.net/10261/352933
https://doi.org/10.1109/LED.2023.3273923
https://api.elsevier.com/content/abstract/scopus_id/85159804834

المؤلفون: Miranda, E., Aguirre, F. L., Salvador, E., González, Mireia, Campabadal, Francesca, Suñé, J.

المساهمون: European Commission, Consejo Superior de Investigaciones Científicas (España), Ministerio de Ciencia e Innovación (España), Generalitat de Catalunya

مصطلحات موضوعية: Dielectric breakdown | MIM | MOS | Oxide breakdown | Oxide reliability

Relation: #PLACEHOLDER_PARENT_METADATA_VALUE#; info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-139586NB-C41/ES/SIMULACION ELECTRICA DE DISPOSITIVOS Y SISTEMAS MEMRISTIVOS CONVENCIONALES Y NO CONVENCIONALES PARA COMPUTACION NEUROMORFICA/; info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-139586NB-C42/ES/FABRICACION Y CARACTERIZACION DE DISPOSITIVOS MEMRISTIVOS/; info:eu-repo/grantAgreement/EC/H2020/20225AT012; Solid-State Electronics; Publisher's version; https://doi.org/10.1016/j.sse.2023.108812; Sí; http://hdl.handle.net/10261/352932; http://dx.doi.org/10.13039/501100004837; http://dx.doi.org/10.13039/501100003339; http://dx.doi.org/10.13039/501100000780; http://dx.doi.org/10.13039/501100002809; 2-s2.0-85175267503; https://api.elsevier.com/content/abstract/scopus_id/85175267503

الاتاحة: http://hdl.handle.net/10261/352932
https://doi.org/10.1016/j.sse.2023.108812
https://doi.org/10.13039/501100004837
https://doi.org/10.13039/501100003339
https://doi.org/10.13039/501100000780
https://doi.org/10.13039/501100002809
https://api.elsevier.com/content/abstract/scopus_id/85175267503

المؤلفون: Andersen, Sune J., Hansen, Martin Ejnar, Davies, Philip H. J.

المصدر: Intelligence and National Security ; volume 37, issue 2, page 241-261 ; ISSN 0268-4527 1743-9019

الاتاحة: http://dx.doi.org/10.1080/02684527.2021.1976919
https://www.tandfonline.com/doi/pdf/10.1080/02684527.2021.1976919

المؤلفون: Saludes-Tapia, M., Gonzalez, M.B., Campabadal, F., Suñé, J., Miranda, E.

المساهمون: Ministerio de Ciencia, Innovación y Universidades

المصدر: Solid-State Electronics ; volume 194, page 108312 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2022.108312
https://api.elsevier.com/content/article/PII:S0038110122000843?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110122000843?httpAccept=text/plain

المؤلفون: Lanza M., Waser R., Ielmini D., Yang J. J., Goux L., Sune J., Kenyon A. J., Mehonic A., Spiga S., Rana V., Wiefels S., Menzel S., Valov I., Villena M. A., Miranda E., Jing X., Campabadal F., Gonzalez M. B., Aguirre F., Palumbo F., Zhu K., Roldan J. B., Puglisi F. M., Larcher L., Hou T. -H., Prodromakis T., Yang Y., Huang P., Wan T., Chai Y., Pey K. L., Raghavan N., Duenas S., Wang T., Xia Q., Pazos S.

المساهمون: Lanza, M., Waser, R., Ielmini, D., Yang, J. J., Goux, L., Sune, J., Kenyon, A. J., Mehonic, A., Spiga, S., Rana, V., Wiefels, S., Menzel, S., Valov, I., Villena, M. A., Miranda, E., Jing, X., Campabadal, F., Gonzalez, M. B., Aguirre, F., Palumbo, F., Zhu, K., Roldan, J. B., Puglisi, F. M., Larcher, L., Hou, T. -H., Prodromakis, T., Yang, Y., Huang, P., Wan, T., Chai, Y., Pey, K. L., Raghavan, N., Duenas, S., Wang, T., Xia, Q., Pazos, S.

مصطلحات موضوعية: characterization, endurance, memory, memristor, metal-oxide, reliability, resistive switching, variability

Relation: info:eu-repo/semantics/altIdentifier/pmid/34730935; info:eu-repo/semantics/altIdentifier/wos/WOS:000747115200012; volume:15; issue:11; firstpage:17214; lastpage:17231; journal:ACS NANO; http://hdl.handle.net/11380/1256817; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85119281495

الاتاحة: http://hdl.handle.net/11380/1256817
https://doi.org/10.1021/acsnano.1c06980

المؤلفون: Jimenez, D., Cartoixa, X., Miranda, E., Sune, J., Chaves, F. A., Roche, S.

المصدر: Nanotechnology 18, 025201 (2007).

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

URL الوصول: http://arxiv.org/abs/cond-mat/0610882

المؤلفون: Castillo, A., Suñé, J. Mª.

المصدر: Ars Pharmaceutica (Internet); Vol. 10 No. 1-2 (1969); 3-33 ; Ars Pharmaceutica (Internet); Vol. 10 Núm. 1-2 (1969); 3-33 ; 2340-9894 ; 0004-2927

وصف الملف: application/pdf

Relation: https://revistaseug.ugr.es/index.php/ars/article/view/11234/9287; https://revistaseug.ugr.es/index.php/ars/article/view/11234

الاتاحة: https://revistaseug.ugr.es/index.php/ars/article/view/11234

المؤلفون: Lanza, M, Waser, R, Ielmini, D, Yang, JJ, Goux, L, Suñe, J, Kenyon, AJ, Mehonic, A, Spiga, S, Rana, V, Wiefels, S, Menzel, S, Valov, I, Villena, MA, Miranda, E, Jing, X, Campabadal, F, Gonzalez, MB, Aguirre, F, Palumbo, F, Zhu, K, Roldan, JB, Puglisi, FM, Larcher, L, Hou, T-H, Prodromakis, T, Yang, Y, Huang, P, Wan, T, Chai, Y, Pey, KL, Raghavan, N, Dueñas, S, Wang, T, Xia, Q, Pazos, S

المصدر: ACS Nano (2021) (In press).

مصطلحات موضوعية: Characterization, endurance, memory, memristor, metal-oxide, reliability, resistive switching, variability

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/10137690/1/ACS%20Nano%20Endurance%202021.pdf; https://discovery.ucl.ac.uk/id/eprint/10137690/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10137690/1/ACS%20Nano%20Endurance%202021.pdf
https://discovery.ucl.ac.uk/id/eprint/10137690/

المؤلفون: Saludes-Tapia, M., Gonzalez, M.B., Campabadal, F., Suñé, J., Miranda, E.

المساهمون: España Ministerio de Ciencia Innovación y Universidades

المصدر: Solid-State Electronics ; volume 185, page 108083 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2021.108083
https://api.elsevier.com/content/article/PII:S0038110121001283?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110121001283?httpAccept=text/plain

المؤلفون: European Commission, Consejo Superior de Investigaciones Científicas (España), Ministerio de Ciencia e Innovación (España), Generalitat de Catalunya, Miranda, E., Aguirre, F. L., Salvador, E., González, Mireia, Campabadal, Francesca, Suñé, J.

مصطلحات الفهرس: Dielectric breakdown | MIM | MOS | Oxide breakdown | Oxide reliability, artículo

URL: http://hdl.handle.net/10261/352932
https://api.elsevier.com/content/abstract/scopus_id/85175267503
https://doi.org/10.1016/j.sse.2023.108812
Solid-State Electronics
Publisher's version
https://doi.org/10.1016/j.sse.2023.108812
Sí
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-139586NB-C41/ES/SIMULACION ELECTRICA DE DISPOSITIVOS Y SISTEMAS MEMRISTIVOS CONVENCIONALES Y NO CONVENCIONALES PARA COMPUTACION NEUROMORFICA
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-139586NB-C42/ES/FABRICACION Y CARACTERIZACION DE DISPOSITIVOS MEMRISTIVOS
info:eu-repo/grantAgreement/EC/H2020/20225AT012

المؤلفون: Lanza, M, Wong, HSP, Pop, E, Ielmini, D, Strukov, D, Regan, BC, Larcher, L, Villena, MA, Yang, JJ, Goux, L, Belmonte, A, Yang, Y, Puglisi, FM, Kang, J, Magyari-Köpe, B, Yalon, E, Kenyon, A, Buckwell, M, Mehonic, A, Shluger, A, Li, H, Hou, TH, Hudec, B, Akinwande, D, Ge, R, Ambrogio, S, Roldan, JB, Miranda, E, Suñe, J, Pey, KL, Wu, X, Raghavan, N, Wu, E, Lu, WD, Navarro, G, Zhang, W, Wu, H, Li, R, Holleitner, A, Wurstbauer, U, Lemme, MC, Liu, M, Long, S, Liu, Q, Lv, H, Padovani, A, Pavan, P, Valov, I, Jing, X, Han, T, Zhu, K, Chen, S, Hui, F, Shi, Y

المصدر: Advanced Electronic Materials , 5 (1) , Article 1800143. (2019)

مصطلحات موضوعية: electrical characterization, electronic synapses, nanofabrication, resistive random‐access memories, resistive switching

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/10058078/1/Kenyon_Recommended%20Methods%20to%20Study%20Resistive%20Switching%20Devices_AAM.pdf; https://discovery.ucl.ac.uk/id/eprint/10058078/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10058078/1/Kenyon_Recommended%20Methods%20to%20Study%20Resistive%20Switching%20Devices_AAM.pdf
https://discovery.ucl.ac.uk/id/eprint/10058078/

المؤلفون: Muñoz-Gorriz, J., Blachier, D., Reimbold, G., Campabadal, Francesca, Sune, J., Monaghan, S., Cherkaoui, K., Hurley, P.K., Miranda, E.

المساهمون: Ministerio de Ciencia, Innovación y Universidades (España), Agencia Estatal de Investigación (España)

Relation: #PLACEHOLDER_PARENT_METADATA_VALUE#; TEC2017-84321-C4-1-R/AEI/10.13039/501100011033; info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/TEC2017-84321-C4-1-R; Postprint; Sí; IEEE Transactions on Device and Materials Reliability 19: 452- 460 (2019); http://hdl.handle.net/10261/193433; http://dx.doi.org/10.13039/501100011033

الاتاحة: http://hdl.handle.net/10261/193433
https://doi.org/10.1109/TDMR.2019.2917138
https://doi.org/10.13039/501100011033

المؤلفون: Petzold, S., Miranda, E., Sharath, S. U., Muñoz-Gorriz, J., Vogel, T., Piros, E., Kaiser, N., Eilhardt, R., Zintler, A., Molina-Luna, L., Suñé, J., Alff, L.

المساهمون: ECSEL JU, MINECO, Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung, Deutscher Akademischer Austauschdienst, H2020 European Research Council

المصدر: Journal of Applied Physics ; volume 125, issue 23 ; ISSN 0021-8979 1089-7550

الاتاحة: http://dx.doi.org/10.1063/1.5094864
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.5094864/15229576/234503_1_online.pdf

المؤلفون: Miranda, E., Piros, E., Aguirre, F. L., Kim, T., Schreyer, P., Gehrunger, J., Oster, T., Hofmann, K., Suñé, J., Hochberger, C., Alff, L.

المساهمون: Merck KGaA, Darmstadt, Germany, in the framework of the joint research platform by the company and Technische Universität (TU) Darmstadt called “Sustainability Hub, ”, TU Darmstadt Research Fellowship Program, Ministerio de Ciencia e Innovación, Spain

المصدر: IEEE Electron Device Letters ; volume 44, issue 9, page 1551-1554 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2023.3298023
http://xplorestaging.ieee.org/ielx7/55/10230308/10190769.pdf?arnumber=10190769

المؤلفون: Aguirre, F., Piros, E., Kaiser, N., Vogel, T., Petzold, S., Gehrunger, J., Oster, T., Hofmann, K., Hochberger, C., Suñé, J., Alff, L., Miranda, E.

المساهمون: Horizon 2020 Framework Program, Ministerio de Ciencia e Innovación, Bundesministerium für Bildung und Forschung, Deutsche Forschungsgemeinschaft, Merck KGaA, European Metrology Program for Innovation and Research

المصدر: APL Machine Learning ; volume 1, issue 3 ; ISSN 2770-9019

الاتاحة: http://dx.doi.org/10.1063/5.0143926
https://pubs.aip.org/aip/aml/article-pdf/doi/10.1063/5.0143926/18023486/036104_1_5.0143926.pdf

المؤلفون: Petzold, S., Miranda, E., Sharath, S. U., Muñoz-Gorriz, J., Vogel, T., Piros, E., Kaiser, N., Eilhardt, R., Zintler, A., Molina-Luna, L., Suñé, J., Alff, L.

المصدر: Journal of Applied Physics; 6/21/2019, Vol. 125 Issue 23, pN.PAG-N.PAG, 8p, 1 Diagram, 4 Graphs

مصطلحات موضوعية: NONVOLATILE random-access memory, RANDOM access memory, HAFNIUM oxide