المؤلفون: Chou, Ang-Sheng, Hsu, Ching-Hao, Lin, Yu-Tung, Arutchelvan, Goutham, Chen, Edward, Hung, Terry Y.T., Hsu, Chen-Feng, Chou, Sui-An, Lee, Tsung-En, Madia, Oreste, Doornbos, Gerben, Su, Yuan-Chun, Azizi, Amin, Sathaiya, D. Mahaveer, Cai, Jin, Wang, Jer-Fu, Chung, Yun-Yan, Wu, Wen-Chia, Neilson, Katie, Yun, Wei-Sheng, Hsu, Yu-Wei, Hsu, Ming-Chun, Hou, Fa-Rong, Shen, Yun-Yang, Chien, Chao-Hsin, Wu, Chung-Cheng, Wu, Jeff, Wong, H.-S. Philip, Chang, Wen-Hao, van Dal, Mark, Cheng, Chao-Ching, Wu, Chih-I, Radu, Iuliana P.

المساهمون: National Science and Technology Council

المصدر: 2023 International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm45741.2023.10413779
http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413779.pdf?arnumber=10413779

المؤلفون: Ho, Po-Hsun, Cheng, Ren-Hao, Pao, Po-Heng, Chou, Sui-An, Huang, Yi-Hsiu, Yang, Yu-Ying, Wu, Yu-Syuan, Su, Yuan-Chun, Mao, Po-Sen, Su, Sheng-Kai, Chou, Bo-Jhih, Chen, Edward, Hung, Terry Y. T., Li, Ming-Yang, Cheng, Chao-Ching, Woon, Wei-Yen, Liao, Szuya, Chang, Wen-Hao, Chien, Chao-Hsin

المساهمون: National Chiao Tung University, Taiwan Semiconductor Manufacturing Company

المصدر: ACS Nano ; volume 17, issue 13, page 12208-12215 ; ISSN 1936-0851 1936-086X

الاتاحة: http://dx.doi.org/10.1021/acsnano.3c00522
https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c00522

المؤلفون: Lee, Tsung-En, Su, Yuan-Chun, Lin, Bo-Jiun, Chen, Yi-Xuan, Yun, Wei-Sheng, Ho, Po-Hsun, Wang, Jer-Fu, Su, Sheng-Kai, Hsu, Chen-Feng, Mao, Po-Sen, Chang, Yu-Cheng, Chien, Chao-Hsin, Liu, Bo-Heng, Su, Chien-Ying, Kei, Chi-Chung, Wang, Han, Philip Wong, H.-S., Lee, T. Y., Chang, Wen-Hao, Cheng, Chao-Ching, Radu, Iuliana P.

المساهمون: Ministry of Science and Technology

المصدر: 2022 International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm45625.2022.10019552
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019552.pdf?arnumber=10019552

المؤلفون: Chou, Ang-Sheng, Cheng, Chao-Ching, Liew, San-Lin, Ho, Po-Hsun, Wang, Shih-Yun, Chang, Yu-Chen, Chang, Che-Kang, Su, Yuan-Chun, Huang, Zheng-Da, Fu, Fang-Yu, Hsu, Chen-Feng, Chung, Yun-Yan, Chang, Wen-Hao, Li, Lain-Jong, Wu, Chih-I

المساهمون: Ministry of Science and Technology, Taiwan

المصدر: IEEE Electron Device Letters ; volume 42, issue 2, page 272-275 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2020.3048371
http://xplorestaging.ieee.org/ielx7/55/9337249/09311615.pdf?arnumber=9311615

المؤلفون: Chou, Ang-Sheng, Cheng, Chao-Ching, Liew, San-Lin, Ho, Po-Hsun, Wang, Shih-Yun, Chang, Yu-Chen, Chang, Che-Kang, Su, Yuan-Chun, Huang, Zheng-Da, Fu, Fang-Yu, Hsu, Chen-Feng, Chung, Yun-Yan, Chang, Wen-Hao, Li, Lain-Jong, Wu, Chih-I

المصدر: IEEE Electron Device Letters; Feb2021, Vol. 47 Issue 2, p272-275, 4p

مصطلحات موضوعية: OHMIC contacts, FIELD-effect transistors, CHEMICAL vapor deposition, CARRIER density, MONOMOLECULAR films, MOLYBDENUM disulfide