المؤلفون: Department of Materials Science and Engineering, University of Florida, P.O. Box 116400, Gainesville, FL 32611 USA ( host institution ), Pearton, S.J ( author ), Abernathy, C.R ( author ), Thaler, G.T ( author ), Frazier, R ( author ), Ren, F ( author ), Hebard, A.F ( author ), Park, Y.D ( author ), Norton, D.P ( author ), Tang, W ( author ), Stavola, M ( author ), Zavada, J.M ( author ), Wilson, R.G ( author )

مصطلحات موضوعية: Defects, Doping, Ferromagnetism, Wide band gap, Semiconductors

وصف الملف: Pages 39-47

Relation: Physica B: Physics of Condensed Matter; S0921-4526(03)00648-3; PHYSB; 29154; http://ufdc.ufl.edu/LS00522895/00001

الاتاحة: https://doi.org/10.1016/j.physb.2003.09.003
http://ufdc.ufl.edu/LS00522895/00001

المؤلفون: Department of Materials Science and Engineering, University of Florida, Rhines Hall, P.O. Box 116400, Gainesville, FL 32611, USA ( host institution ), Pearton, S.J. ( author ), Abernathy, C.R. ( author ), Wilson, R.G. ( author ), Zavada, J.M. ( author ), Song, C.Y. ( author ), Weinstein, M.G. ( author ), Stavola, M. ( author ), Han, J. ( author ), Shul, R.J. ( author )

مصطلحات موضوعية: 68.55L, 72.80E, 71.55E, Hydrogen, GaN, Compensation, Device isolation, Defects

وصف الملف: Pages 171-174

Relation: Nuclear Inst. and Methods in Physics Research, B; S0168-583X(98)90561-4; NIMB; 6024; http://ufdc.ufl.edu/LS00514899/00001

الاتاحة: https://doi.org/10.1016/S0168-583X(98)90561-4
http://ufdc.ufl.edu/LS00514899/00001

المؤلفون: AT, T Bell Laboratories, Murray Hill, New Jersey 07974, USA ( host institution ), Hobson, W.S. ( author ), Zheng, J.-F. ( author ), Stavola, M. ( author ), Pearton, S.J. ( author )

وصف الملف: Pages 124-128

Relation: Journal of Crystal Growth; 0022-0248(94)90046-9; CRYS; http://ufdc.ufl.edu/LS00505639/00001

الاتاحة: https://doi.org/10.1016/0022-0248(94)90046-9
http://ufdc.ufl.edu/LS00505639/00001