يعرض 1 - 10 نتائج من 10 نتيجة بحث عن '"Stanchev, T"', وقت الاستعلام: 0.48s تنقيح النتائج
  1. 1
    Academic Journal
    Characterization of program and erase speed of memory capacitors with nanolaminated HfO 2 /Al 2 O 3 stacks for application in non-volatile memories

    المؤلفون: Spassov, D, Paskaleva, A, Ivanov, Tz, Stanchev, T

    المصدر: Journal of Physics: Conference Series ; volume 2710, issue 1, page 012027 ; ISSN 1742-6588 1742-6596

    الاتاحة: http://dx.doi.org/10.1088/1742-6596/2710/1/012027
    https://iopscience.iop.org/article/10.1088/1742-6596/2710/1/012027
    https://iopscience.iop.org/article/10.1088/1742-6596/2710/1/012027/pdf

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  2. 2
    Academic Journal
    Charge trapping effects in nonvolatile memory cells with HfO 2 /Al 2 O 3 nanolaminated trapping layer

    المؤلفون: Spassov, D, Paskaleva, A, Guziewicz, E, Stanchev, T, Ivanov, Tz

    المصدر: Journal of Physics: Conference Series ; volume 2436, issue 1, page 012016 ; ISSN 1742-6588 1742-6596

    الاتاحة: http://dx.doi.org/10.1088/1742-6596/2436/1/012016
    https://iopscience.iop.org/article/10.1088/1742-6596/2436/1/012016
    https://iopscience.iop.org/article/10.1088/1742-6596/2436/1/012016/pdf

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  3. 3
    Academic Journal
    Electrical characterization of memory capacitors for nonvolatile memory applications based on nanolaminated HfO 2 /Al 2 O 3 and Al-doped HfO 2 stacks

    المؤلفون: Spassov, D, Paskaleva, A, Stanchev, T, Ivanov, Tz

    المصدر: Journal of Physics: Conference Series ; volume 2240, issue 1, page 012046 ; ISSN 1742-6588 1742-6596

    الاتاحة: http://dx.doi.org/10.1088/1742-6596/2240/1/012046
    https://iopscience.iop.org/article/10.1088/1742-6596/2240/1/012046
    https://iopscience.iop.org/article/10.1088/1742-6596/2240/1/012046/pdf

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  4. 4
    Academic Journal
    Magneto-optical characterization of ZnO / Ni nano-laminate obtained via Atomic Layer Deposition

    المؤلفون: Buchkov, K, Galluzzi, A, Blagoev, B, Paskaleva, A, Terziyska, P, Stanchev, T, Mehandzhiev, V, Tzvetkov, P, Kovacheva, D, Avramova, I, Nazarova, E, Polichetti, M

    المصدر: Journal of Physics: Conference Series ; volume 1762, issue 1, page 012041 ; ISSN 1742-6588 1742-6596

    الاتاحة: http://dx.doi.org/10.1088/1742-6596/1762/1/012041
    https://iopscience.iop.org/article/10.1088/1742-6596/1762/1/012041
    https://iopscience.iop.org/article/10.1088/1742-6596/1762/1/012041/pdf

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  5. 5
    Academic Journal
    Effect of blocking and tunnel oxide layers on the charge trapping properties of MIS capacitors with ALD HfO 2 /Al 2 O 3 nanolaminated films

    المؤلفون: Spassov, D, Paskaleva, A, Guziewicz, E, Wozniak, W, Stanchev, T, Ivanov, Tz, Wojewoda-Budka, J, Janusz-Skuza, M

    المصدر: Journal of Physics: Conference Series ; volume 1762, issue 1, page 012038 ; ISSN 1742-6588 1742-6596

    الاتاحة: http://dx.doi.org/10.1088/1742-6596/1762/1/012038
    https://iopscience.iop.org/article/10.1088/1742-6596/1762/1/012038
    https://iopscience.iop.org/article/10.1088/1742-6596/1762/1/012038/pdf

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  6. 6
    Academic Journal
    Characterization of program and erase speed of memory capacitors with nanolaminated HfO2/Al2O3 stacks for application in non-volatile memories.

    المؤلفون: Spassov, D, Paskaleva, A, Ivanov, Tz, Stanchev, T

    المصدر: Journal of Physics: Conference Series; Feb2024, Vol. 2710 Issue 1, p1-5, 5p

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  7. 7
    Conference
    Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks

    المؤلفون: Spassov, Dentcho, Paskaleva, Albena, Davidović, Vojkan S., Đorić-Veljković, Snežana M., Stanković, Srboljub, Stojadinović, Ninoslav D., Ivanov, Tzvetan E., Stanchev, T.

    المصدر: 2019 IEEE 31st International Conference on Microelectronics (MIEL)

    Relation: https://ieeexplore.ieee.org/document/8889600/; https://vinar.vin.bg.ac.rs/handle/123456789/8658; 2-s2.0-85075337912

    الاتاحة: https://ieeexplore.ieee.org/document/8889600/
    https://vinar.vin.bg.ac.rs/handle/123456789/8658
    https://doi.org/10.1109/MIEL.2019.8889600

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  8. 8
    Academic Journal
    Simeon (bŭlgarski t︠s︡ar) : istoricheska drama v chetiri deĭstvii︠a︡

    المؤلفون: Stanchev, T. Kh.

    وصف الملف: bib

    Relation: http://hdl.handle.net/2027/hvd.hxk4st

    الاتاحة: http://hdl.handle.net/2027/hvd.hxk4st

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  9. 9
    Academic Journal
    Impact of Trapped Charge on the Breakdown Phenomena in HfO2/Al2O3 — Based Memory Capacitors.

    المؤلفون: Spassov, D.1 (AUTHOR) d.spassov@issp.bas.bg, Paskaleva, A.1 (AUTHOR) paskaleva@issp.bas.bg, Guziewicz, E.2 (AUTHOR) guzel@ifpan.edu.pl, Ivanov, Tz.1 (AUTHOR) tsvn@issp.bas.bg, Stanchev, T.1 (AUTHOR) stanchev@issp.bas.bg, Davidović, V.3 (AUTHOR) vojkan.davidovic@elfak.ni.ac.rs, Veljković, S.3 (AUTHOR) sandra.veljkovic@elfak.ni.ac.rs, Mitrović, N.3 (AUTHOR) nikola.I.mitrovic@elfak.ni.ac.rs, Danković, D.3 (AUTHOR) danijel.dankovic@elfak.ni.ac.rs

    المصدر: Journal of Circuits, Systems & Computers. Dec2024, p1. 16p. 8 Illustrations.

    مصطلحات موضوعية: *FLASH memory, *ELECTRIC fields, *VOLTAGE, *TUNNEL design & construction, *CAPACITORS


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  10. 10
    Image
    Тълкованіе на божествениія молитвенній домъ. и на сичкитѣ му принадлежности, священни одѣжди, черковни молитви, божественната литургія и на св. таинства съ прибавленіе пѣснитѣ на литургіята

    المؤلفون: Станчев, Тодор, Stanchev, Todor

    الاتاحة: http://data.europeana.eu/aggregation/europeana/2048016/Athena_Plus_ProvidedCHO_____________________________S000124346

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