يعرض 1 - 20 نتائج من 47 نتيجة بحث عن '"Sputz, S. K."', وقت الاستعلام: 0.54s تنقيح النتائج
  1. 1
    Academic Journal
    Pressure-tuned resonance Raman scattering in Ga 1-x -In x As/Ga 1-y A1 y As strained layer multiple quatum well structures

    المؤلفون: Jayaraman, A., Kourouiuis, G. A., People, R., Sputz, S. K., Mines, R. G., Sivco, D. L., Cho, A. Y.

    المصدر: High Pressure Research ; volume 6, issue 1, page 27-45 ; ISSN 0895-7959 1477-2299

    الاتاحة: http://dx.doi.org/10.1080/08957959008203196
    https://www.tandfonline.com/doi/pdf/10.1080/08957959008203196

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  2. 2
    Academic Journal
    Pressure-induced resonance Raman scattering in Ga1-xInxAs/Ga1-yAlyAs strained quantum-well structures.

    المؤلفون: Kourouklis, G. A., Jayaraman, A., People, R., Sputz, S. K., Maines, R. G., Sivco, D. L., Cho, A. Y.

    المصدر: Journal of Applied Physics; 5/15/1990, Vol. 67 Issue 10, p6438, 7p, 10 Graphs

    مصطلحات موضوعية: QUANTUM wells, RAMAN effect, RESONANCE, PHONONS


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  3. 3
    Academic Journal
    Simulation and characterization of the selective area growth process

    المؤلفون: Alam, M. A., People, R., Isaacs, E., Kim, C. Y., Evans-Lutterodt, K., Siegrist, T., Pernell, T. L., Vandenberg, J., Sputz, S. K., Chu, S. N. G., Lang, D. V., Smith, L., Hybertsen, M. S.

    المصدر: Applied Physics Letters ; volume 74, issue 18, page 2617-2619 ; ISSN 0003-6951 1077-3118

    الاتاحة: http://dx.doi.org/10.1063/1.123915
    https://pubs.aip.org/aip/apl/article-pdf/74/18/2617/18541418/2617_1_online.pdf

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  4. 4
    Academic Journal
    Thresholdlike behavior of photoluminescence in laser heterostructure wafers

    المؤلفون: Grinberg, A. A., Sputz, S. K.

    المصدر: Journal of Applied Physics ; volume 82, issue 8, page 4006-4012 ; ISSN 0021-8979 1089-7550

    الاتاحة: http://dx.doi.org/10.1063/1.366250
    https://pubs.aip.org/aip/jap/article-pdf/82/8/4006/18696259/4006_1_online.pdf

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  5. 5
    Academic Journal
    Properties Of Inp Simultaneously Doped With Zinc And Sulfur Grown By Mocvd

    المؤلفون: Alavanja, C. M., Pinzone, C. J., Sputz, S. K., Geva, M.

    المصدر: MRS Proceedings ; volume 442 ; ISSN 0272-9172 1946-4274

    الاتاحة: http://dx.doi.org/10.1557/proc-442-441
    https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400283036

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  6. 6
    Academic Journal
    Growth and Characterization Of Extremely Abrupt InGaAs

    المؤلفون: Wells, Quantum, Pinzone, C. J., Byrne, E. K., Sputz, S. K., People, R., Vandenberg, J., Chu, S. N. G.

    المصدر: MRS Proceedings ; volume 326 ; ISSN 1946-4274

    الاتاحة: http://dx.doi.org/10.1557/proc-326-209
    https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400415228

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  7. 7
    Academic Journal
    Pseudomorphic In 0.17 Ga 0.83 As/Al 0.32 Ga 0.68 As multiple quantum wells under hydrostatic pressure: implications for band alignments

    المؤلفون: People, R., Jayaraman, A., Sputz, S. K., Vandenberg, J. M., Sivco, D. L., Cho, A. Y.

    مصطلحات موضوعية: QC Physics, phil, envir

    Relation: http://repository.ias.ac.in/13301/

    الاتاحة: http://repository.ias.ac.in/13301/

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  8. 8
    Academic Journal
    Pseudomorphic In 0.17 Ga 0.83 As/ Al 0.32 Ga 0.68 As multiple quantum wells under hydrostatic pressure: Implications for band alignments

    المؤلفون: People, R., Jayaraman, A., Sputz, S. K., Vandenberg, J. M., Sivco, D. L., Cho, A. Y.

    المصدر: Physical Review B ; volume 45, issue 11, page 6031-6036 ; ISSN 0163-1829 1095-3795

    الاتاحة: http://dx.doi.org/10.1103/physrevb.45.6031
    http://link.aps.org/article/10.1103/PhysRevB.45.6031
    http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.6031/fulltext

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  9. 9
    Academic Journal
    Broadband (8–14 μm), normal incidence, pseudomorphic Gex Si1−x/Si strained-layer infrared photodetector operating between 20 and 77 K

    المؤلفون: People, R., Bean, J. C., Bethea, C. G., Sputz, S. K., Peticolas, L. J.

    المصدر: Applied Physics Letters ; volume 61, issue 9, page 1122-1124 ; ISSN 0003-6951 1077-3118

    الاتاحة: http://dx.doi.org/10.1063/1.107688
    https://pubs.aip.org/aip/apl/article-pdf/61/9/1122/18490765/1122_1_online.pdf

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  10. 10
    Academic Journal
    Microstructural Characterization of Photoluminescent Porous Silicon

    المؤلفون: Macaulay, J. M., Ross, F. M., Searson, P. C., Sputz, S. K., People, R., Friedersdorf, L. E.

    المصدر: MRS Proceedings ; volume 256 ; ISSN 0272-9172 1946-4274

    الاتاحة: http://dx.doi.org/10.1557/proc-256-47
    https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400337502

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  11. 11
    Academic Journal
    Pressure-induced resonance raman scattering in Ga 1-x In x As/Ga 1-y Al y As multiple quantum well strucitjres

    المؤلفون: Kourouklis, G. A., Jayamman, A., People, R., Sputz, S. K., Sivco, D. L., Cho, A. Y.

    المصدر: High Pressure Research ; volume 7, issue 1-6, page 247-249 ; ISSN 0895-7959 1477-2299

    الاتاحة: http://dx.doi.org/10.1080/08957959108245557
    http://www.tandfonline.com/doi/pdf/10.1080/08957959108245557

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  12. 12
    Academic Journal
    GaAs/AlGaAs quantum well and modulation-doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane

    المؤلفون: Hobson, W. S., Ren, F., Schnoes, M. Lamont, Sputz, S. K., Harris, T. D., Pearton, S. J., Abernathy, C. R., Jones, K. S.

    المصدر: Applied Physics Letters ; volume 59, issue 16, page 1975-1977 ; ISSN 0003-6951 1077-3118

    الاتاحة: http://dx.doi.org/10.1063/1.106154
    https://pubs.aip.org/aip/apl/article-pdf/59/16/1975/18485057/1975_1_online.pdf

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  13. 13
    Academic Journal
    Pressure-induced resonance Raman scattering in Ga 1−x In x As/Ga 1−y Al y As strained quantum-well structures

    المؤلفون: Kourouklis, G. A., Jayaraman, A., People, R., Sputz, S. K., Maines, R. G., Sivco, D. L., Cho, A. Y.

    مصطلحات موضوعية: QC Physics, envir, socio

    Relation: http://repository.ias.ac.in/96092/

    الاتاحة: http://repository.ias.ac.in/96092/

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  14. 14
    Academic Journal
    Pressure-tuned resonance Raman scattering and photoluminescence studies on MBE grown bulk GaAs at the E 0 gap

    المؤلفون: Jayaraman, A., Kourouklis, G. A., People, R., Sputz, S. K., Pfeiffer, L.

    مصطلحات موضوعية: QC Physics, phil, socio

    Relation: http://repository.ias.ac.in/96091/1/Pressure-tuned.pdf; http://repository.ias.ac.in/96091/

    الاتاحة: http://repository.ias.ac.in/96091/1/Pressure-tuned.pdf
    http://repository.ias.ac.in/96091/

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  15. 15
    Academic Journal
    Pressure-tuned resonance Raman scattering and photoluminescence studies on MBE grown bulk GaAs at theE 0 gap

    المؤلفون: Jayaraman, A, Kourouklis, G A, People, R, Sputz, S K, Pfeiffer, L

    المصدر: Pramana ; volume 35, issue 2, page 167-176 ; ISSN 0304-4289 0973-7111

    الاتاحة: http://dx.doi.org/10.1007/bf02875290
    http://link.springer.com/content/pdf/10.1007/BF02875290.pdf
    http://link.springer.com/article/10.1007/BF02875290/fulltext.html
    http://link.springer.com/content/pdf/10.1007/BF02875290

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  16. 16
    Academic Journal
    Band nonparabolicities in lattice-mismatch-strained bulk semiconductor layers

    المؤلفون: People, R., Sputz, S. K.

    المصدر: Physical Review B ; volume 41, issue 12, page 8431-8439 ; ISSN 0163-1829 1095-3795

    الاتاحة: http://dx.doi.org/10.1103/physrevb.41.8431
    http://link.aps.org/article/10.1103/PhysRevB.41.8431
    http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.8431/fulltext

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  17. 17
    Academic Journal
    Pressure-induced resonance Raman scattering in Ga1−x Inx As/Ga1−y Aly As strained quantum-well structures

    المؤلفون: Kourouklis, G. A., Jayaraman, A., People, R., Sputz, S. K., Maines, R. G., Sivco, D. L., Cho, A. Y.

    المصدر: Journal of Applied Physics ; volume 67, issue 10, page 6438-6444 ; ISSN 0021-8979 1089-7550

    الاتاحة: http://dx.doi.org/10.1063/1.345117
    https://pubs.aip.org/aip/jap/article-pdf/67/10/6438/18634519/6438_1_online.pdf

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  18. 18
    Conference
    PRESSURE-INDUCED RESONANCE RAMAN SCATTERING IN Ga1-xInxAs/Ga1-yAlyAs MULTIPLE QUANTUM WELL STRUCTURES.

    المؤلفون: Kourouklis, G. A., Jayaraman, A., People, R., Sputz, S. K., Sivco, D. L., Cho, A. V.

    المصدر: Physics of Semiconductors - Proceedings of the 20th International Conference (In 3 Volumes); 1990, p925-928, 4p

    مصطلحات موضوعية: RESONANCE Raman effect, RAMAN scattering, QUANTUM wells, PHONONS, PHOTOLUMINESCENCE


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  19. 19
    Academic Journal
    Pressure-tuned resonance Raman scattering in Ga -In As/Ga A1 As strained layer multiple quatum well structures.

    المؤلفون: Jayaraman, A., Kourouiuis, G. A., People, R., Sputz, S. K., Mines, R. G., Sivco, D. L., Cho, A. Y.

    المصدر: High Pressure Research; Oct1990, Vol. 6 Issue 1, p27-45, 19p


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  20. 20
    Periodical
    Photoluminescence studies of heteroepitaxial gaas on si

    المؤلفون: Wilson, B. A., Bonner, Carl E., Miller, R. C., Sputz, S. K., Harris, T. D., Lamont, M. G., Dupuis, R. D., Vernon, S. M., Haven, V. E., Lum, R. M., Klingert, J. K.

    المصدر: Journal of Electronic Materials; March 1988, Vol. 17 Issue: 2 p115-119, 5p


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