المؤلفون: Roopesh Singh, Shivam Verma

المصدر: IEEE Open Journal of Nanotechnology, Vol 6, Pp 27-34 (2025)

مصطلحات موضوعية: Fin field effect transistor (FinFET), ferroelectric field effect transistor (FeFET), magnetic tunnel junction (MTJ), junctionless-accumulation-mode (JAM), ferroelectric random-access memory (FeRAM), spin transfer torque (STT), Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10845186/; https://doaj.org/toc/2644-1292

URL الوصول: https://doaj.org/article/d1addcab1886427f9660354310aeeb09

المؤلفون: Piyush Kumar, Da Eun Shim, Siri Narla, Azad Naeemi

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 13-21 (2024)

مصطلحات موضوعية: Back-end-of-the-line (BEOL), interconnect, magnetic random-access memory (MRAM), spin-orbit torque (SOT), spin-transfer torque (STT), Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10412202/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/c57ce292b48d402b8edde7ca486724fd

المؤلفون: Abhishree Shaw, Vinod Kumar Joshi

المصدر: Journal of Physics Communications, Vol 8, Iss 12, p 125001 (2024)

مصطلحات موضوعية: Spin Transfer Torque (STT), Tunnel Magnetoresistance (TMR), Perpendicular single barrier MTJ (SMTJ), Perpendicular double barrier MTJ (DBMTJ), OOMMF, Exchange Stiffness constant (Aex), Science, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2399-6528

URL الوصول: https://doaj.org/article/cbf7ecb22c8e46d7bd77df6f2f400ff0

المؤلفون: Hilal Ahmad Bhat, Farooq Ahmad Khanday, Brajesh Kumar Kaushik, Faisal Bashir, Khurshed Ahmad Shah

المصدر: IEEE Open Journal of Nanotechnology, Vol 3, Pp 61-77 (2022)

مصطلحات موضوعية: Quantum Computing, Quantum Computer, Qubit, Quantum Gates, Spin transfer torque (STT), Quantum Cryptography, Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9783210/; https://doaj.org/toc/2644-1292

URL الوصول: https://doaj.org/article/2eb40741c9f346318d7539c842bca6e8

المؤلفون: Piyush Kumar, Azad Naeemi

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 2, Pp 185-193 (2022)

مصطلحات موضوعية: Magnetic random access memory (MRAM), spin–orbit torque (SOT), spin-transfer torque (STT), voltage-controlled magnetic anisotropy (VCMA), Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9994702/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/b8a6e6e341f54f8e961469d2a1673757

المؤلفون: Johannes Ender, Simone Fiorentini, Roberto L. De Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 456-463 (2021)

مصطلحات موضوعية: Digital spintronics, spin-transfer torque (STT), spin-orbit torque (SOT), magnetoresistive random access memory (MRAM), in-memory computing, reinforcement learning (RL), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9380657/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/ffd89c9f04be43b0a9e6e94e1013bb54

المؤلفون: Rajat Kumar, Divyanshu Divyanshu, Danial Khan, Selma Amara, Yehia Massoud

المصدر: Electronics; Volume 11; Issue 11; Pages: 1753

مصطلحات موضوعية: giant spin Hall effect (GSHE), hardware security, hardware trojan, magnetic tunnel junction (MTJ), spintronics, spin-orbit torque (SOT), spin-transfer torque (STT)

وصف الملف: application/pdf

Relation: Computer Science & Engineering; https://dx.doi.org/10.3390/electronics11111753

الاتاحة: https://doi.org/10.3390/electronics11111753

المؤلفون: Tankwal, Piyush, Nehra, Vikas, Prajapati, Sanjay, Kaushik, Brajesh Kumar

المصدر: Circuit World, 2019, Vol. 45, Issue 4, pp. 300-310.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/CW-04-2019-0036

المؤلفون: Yu-Ching Liao, Chenyun Pan, Azad Naeemi

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 1, Pp 9-17 (2020)

مصطلحات موضوعية: Magnetoelectric (ME), nonvolatile memory, spintronics, spin-orbit torque (SOT), spin-transfer torque (STT), voltage-controlled exchange coupling (VCEC), Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9104969/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/3b8e2c049d714f479bc09dabb6df5eb8

المؤلفون: Shaik Wasef, Hossein Fariborzi

المصدر: Micromachines; Volume 12; Issue 11; Pages: 1345

مصطلحات موضوعية: combined spin-transfer torque (STT) and spin-orbit torque (SOT) switching, field like torque, damping like torque, magnetic tunnel junction

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi12111345

الاتاحة: https://doi.org/10.3390/mi12111345

المؤلفون: Meshal Alawein, Hossein Fariborzi

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 2, Pp 60-68 (2018)

مصطلحات موضوعية: Equivalent circuit models, spin dissipation, spin precession, spin-transfer torque (STT), spintronics, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8514060/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/7f4153e5e1d345ab8f21d3043364a5d7

المؤلفون: Rangaprasad, Sreevatsan, Joshi, Vinod Kumar

المصدر: Open Access archive

مصطلحات موضوعية: fully non-volatile, hybrid CMOS/MTJ, logic-in-memory (LIM), magnetic ALU, Magnetic tunnel junction (MTJ), majority logic, reconfigurable, spin transfer torque (STT)

Relation: https://impressions.manipal.edu/open-access-archive/8838

الاتاحة: https://impressions.manipal.edu/open-access-archive/8838
https://doi.org/10.1109/ACCESS.2023.3327261

المؤلفون: Jyotirmoy Chatterjee, Laurent Vila, Paulo Coelho, A. Chavent, Liliana D. Buda-Prejbeanu, Stéphane Auffret, Claire Baraduc, Ioan Lucian Prejbeanu, Nikita Strelkov, Bernard Dieny, Ricardo C. Sousa

المساهمون: SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Lomonosov Moscow State University (MSU)

المصدر: ACS Applied Electronic Materials
ACS Applied Electronic Materials, 2021, 3 (6), pp.2607-2613. ⟨10.1021/acsaelm.1c00198⟩

مصطلحات موضوعية: perpendicular magnetic anisotropy (PMA), Materials science, 02 engineering and technology, Double barrier, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Computer Science::Hardware Architecture, [SPI]Engineering Sciences [physics], 0103 physical sciences, Materials Chemistry, Electrochemistry, Torque, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Spin-½, 010302 applied physics, Condensed matter physics, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, Tunnel magnetoresistance, write efficiency, Modulation, double barrier, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Mode control, spin torque modulation, 0210 nano-technology, thermal stability factor, Layer (electronics), spin transfer torque (STT)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55ac30c459f5df9ea39b7b6839d49a95
https://doi.org/10.1021/acsaelm.1c00198

المؤلفون: Bhatti, Sabpreet, Sbiaa, Rachid, Hirohata, Atsufumi, Ohno, Hideo, Fukami, Shunsuke, Piramanayagam, S. N.

المساهمون: School of Physical and Mathematical Sciences

مصطلحات موضوعية: Science::Physics, Spintronics, Spin Transfer Torque (STT)

وصف الملف: application/pdf

Relation: Materials Today; Bhatti, S., Sbiaa, R., Hirohata, A., Ohno, H., Fukami, S., & Piramanayagam, S. N. (2017). Spintronics based random access memory : a review. Materials Today, 20(9), 530-548. doi:10.1016/j.mattod.2017.07.007; https://hdl.handle.net/10356/146755; 2-s2.0-85029474715; 20; 530; 548

الاتاحة: https://hdl.handle.net/10356/146755
https://doi.org/10.1016/j.mattod.2017.07.007

المؤلفون: Ghanatian Najafabadi, Hamdam, Farkhani, Hooman, Moradi, Farshad

المصدر: Ghanatian Najafabadi , H , Farkhani , H & Moradi , F 2022 , A Hybrid Spin-CMOS Flash ADC based on Spin Hall Effect and Spin Transfer Torque . in Proceedings - 2022 IEEE 40th International Conference on Computer Design, ICCD 2022 . IEEE , Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors , vol. 2022 , pp. 701-704 , 40th IEEE International Conference on Computer Design, ICCD 2022 , Olympic Valley , United States , 23/10/2022 . https://doi.org/10.1109/ICCD56317.2022.00107

مصطلحات موضوعية: Flash ADC, magnetic tunnel junction (MTJ), spin-Hall effect (SHE), spin-transfer torque (STT)

Relation: https://pure.au.dk/portal/da/publications/a-hybrid-spincmos-flash-adc-based-on-spin-hall-effect-and-spin-transfer-torque(0e2d95cf-5d3c-47a8-9f4a-c01a21e7c5c8).html; urn:ISBN:9781665461863

الاتاحة: https://pure.au.dk/portal/da/publications/a-hybrid-spincmos-flash-adc-based-on-spin-hall-effect-and-spin-transfer-torque(0e2d95cf-5d3c-47a8-9f4a-c01a21e7c5c8).html
https://doi.org/10.1109/ICCD56317.2022.00107

المؤلفون: Di Pendina, Gregory, Prenat, Guillaume, Dieny, Bernard

المساهمون: SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: EWME 2014: 10th European Workshop on Microelectronics Education ; https://hal.science/hal-02059497 ; EWME 2014: 10th European Workshop on Microelectronics Education, May 2014, Tallinn, Estonia. ⟨10.1109/EWME.2014.6877388⟩

مصطلحات موضوعية: Spin electronics, MRAM Magnetic Random Access Memory, Spin transfer torque STT, Spin transfer torque magnetic RAM, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.TRON]Engineering Sciences [physics]/Electronics

جغرافية الموضوع: Tallinn, Estonia

Time: Tallinn, Estonia

Relation: info:eu-repo/semantics/altIdentifier/arxiv/1906.10206; hal-02059497; https://hal.science/hal-02059497; https://hal.science/hal-02059497/document; https://hal.science/hal-02059497/file/InMRAM%20-%20Introductory%20course%20on%20Magnetic%20Random%20Access%20memories%20for%20microelectronics%20students%20and%20engineers%20IEEE%202014.pdf; ARXIV: 1906.10206

الاتاحة: https://hal.science/hal-02059497
https://hal.science/hal-02059497/document
https://hal.science/hal-02059497/file/InMRAM%20-%20Introductory%20course%20on%20Magnetic%20Random%20Access%20memories%20for%20microelectronics%20students%20and%20engineers%20IEEE%202014.pdf
https://doi.org/10.1109/EWME.2014.6877388

المؤلفون: Chenyun Pan, Yu-Ching Liao, Azad Naeemi

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 1, Pp 9-17 (2020)

مصطلحات موضوعية: Materials science, lcsh:Computer engineering. Computer hardware, nonvolatile memory, voltage-controlled exchange coupling (VCEC), lcsh:TK7885-7895, 02 engineering and technology, 01 natural sciences, law.invention, spin-orbit torque (SOT), law, 0103 physical sciences, spin-transfer torque (STT), Static random-access memory, Electrical and Electronic Engineering, 010306 general physics, spintronics, Magnetoresistive random-access memory, Spintronics, business.industry, Transistor, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Non-volatile memory, Tunnel magnetoresistance, Nanoelectronics, Hardware and Architecture, Optoelectronics, 0210 nano-technology, business, Magnetoelectric (ME), Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8869c46f5ad9b1b30d3cb441b3d8772
https://ieeexplore.ieee.org/document/9104969/

المؤلفون: Jovanović, Bojan, Brum, Raphael M., Torres, Lionel

المصدر: Facta universitatis - series: Electronics and Energetics (2015) 28(3):465-476 ; ISSN: 0353-3670

مصطلحات موضوعية: Hybrid MTJ/CMOS cells, magnetic tunnel junction (MTJ), spin transfer torque (STT), normally-off instant-on computing

وصف الملف: application/pdf; txt

Relation: info:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/44004/RS//; http://scindeks.ceon.rs/article.aspx?artid=0353-36701503465J

الاتاحة: http://scindeks.ceon.rs/article.aspx?artid=0353-36701503465J

المؤلفون: A. La Corte, Giovanni Finocchio, Anna Giordano, Pietro Burrascano, Mario Carpentieri, Vito Puliafito, Bruno Azzerboni, Riccardo Tomasello, Giulio Siracusano

المصدر: IEEE Transactions on Magnetics. 53:1-5

مصطلحات موضوعية: STT-magnetic random-access memory (MRAM), Higher order statistics, Magnetic recording, Magnetic storage, Probability density function, Random access storage, Statistical methods, Switching, skewness, Probability density function, 02 engineering and technology, Dzyaloshinskii–Moriya interaction, kurtosis, skewness, spin-transfer torque (STT), STT-magnetic random-access memory (MRAM), write error rate (WER), 01 natural sciences, Electronic mail, Standard deviation, Switching time, 0103 physical sciences, spin-transfer torque (STT), Electrical and Electronic Engineering, Micromagnetics, Dzyaloshinskii-Moriya interaction, 010302 applied physics, Physics, Condensed matter physics, Dzyaloshinskii–Moriya interaction, kurtosis, write error rate (WER), 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Skewness, Kurtosis, 0210 nano-technology, Order of magnitude

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b19213a495a1abc1e89f86b489e16126
https://doi.org/10.1109/tmag.2017.2708125

المؤلفون: Hiroshi Kikuchi, Kenichi Aoshima, Kenji Machida, Kiyoshi Kuga, Nobuhiko Funabashi, Taiki Takagi, Tatsuhiko Kazama, Yasunobu Akiyama, 久我 淳, 町田 賢司, 秋山 泰伸, 船橋 信彦, 菊池 宏, 青島 賢一, 風間 達彦, 高木 泰輝

المصدر: JSAP Annual Meetings Extended Abstracts. 2016, :1961