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    المصدر: Materials; Volume 16; Issue 13; Pages: 4742

    مصطلحات موضوعية: Ga 2 O 3, microwire, detector, solar-blind, X-ray

    وصف الملف: application/pdf

    Relation: Electronic Materials; https://dx.doi.org/10.3390/ma16134742

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    المساهمون: The research was supported by RSF (project No. 22-72-00010), Исследование выполнено за счет гранта Российского научного фонда (проект № 22-72-00010).

    المصدر: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering; Том 26, № 2 (2023); 137-147 ; Известия высших учебных заведений. Материалы электронной техники; Том 26, № 2 (2023); 137-147 ; 2413-6387 ; 1609-3577 ; 10.17073/1609-3577-2023-2

    وصف الملف: application/pdf

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Deep-level traps responsible for persistent photocurrent in pulsed-laser-deposited β-Ga2O3 thin films. Crystals. 2021; 11(9): 1046. https://doi.org/10.3390/cryst11091046; Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Pearton S.J., Ren F., Chernykh A.V., Lagov P.B., Kulevoy T.V. Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si. APL Materials. 2018; 6(9): 096102. https://doi.org/10.1063/1.5042646; Yakovlev N.N., Almaev A.V., Butenko P.N., Mikhaylov A.N., Pechnikov A.I., Stepanov S.I., Timashov R.B., Chikiryaka A.V., Nikolaev V.I. Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity. Material Physics and Mechanics. 2022; 48(3): 301—307. https://doi.org/10.18149/MPM.4832022_1; Dobaczewski L., Peaker A.R., Bonde N.K. Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors. 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Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors. Superlattices and Microstructures. 2003; 34(1-2): 33—53. https://doi.org/10.1016/j.spmi.2003.12.002; Polyakov A., Nikolaev V., Stepanov S., Almaev A., Pechnikov A., Yakimov E., Kushnarev B.O., Shchemerov I., Scheglov M., Chernykh A., Vasilev A., Kochkova A., Pearton S.J. Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers. Journal of Applied Physics. 2022; 131(21): 215701. https://doi.org/10.1063/5.0090832; Polyakov A.Y., Nikolaev V.I., Tarelkin S.A., Pechnikov A.I., Stepanov S.I., Nikolaev A.E., Shchemerov I.V., Yakimov E.B., Luparev N.V., Kuznetsov M.S., Vasilev A.A., Kochkova A.I., Voronova M.I., Scheglov M.P., Kim J., Pearton S.J. Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates. 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Point defect creation by proton and carbon irradiation of α-Ga2O3. Journal of Applied Physics. 2022; 132(3): 035701. https://www.doi.org/10.1063/5.0100359; https://met.misis.ru/jour/article/view/514

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