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1Academic Journal
المؤلفون: Ke Ding, Hong Zhang, Jili Jiang, Jiangshuai Luo, Rouling Wu, Lijuan Ye, Yan Tang, Di Pang, Honglin Li, Wanjun Li
المصدر: Advanced Science, Vol 11, Iss 43, Pp n/a-n/a (2024)
مصطلحات موضوعية: amorphous Ga2O3, oxygen vacancies, photoelectrochemical‐type photodetectors, self‐powered, solar‐blind underwater imaging, Science
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2198-3844
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2Academic Journal
المؤلفون: Jinjuan Du, Xiyao Li, Tiantian Jia, Hongjin Qiu, Yang Li, Rui Pu, Quanchao Zhang, Hongchang Cheng, Xin Guo, Jiabin Qiao, Huiyang He
المصدر: Photonics, Vol 11, Iss 10, p 986 (2024)
مصطلحات موضوعية: response time, AlGaN photocathode, solar-blind ultraviolet detecting system, Applied optics. Photonics, TA1501-1820
وصف الملف: electronic resource
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3Academic Journal
المؤلفون: SHEN Leyun, ZHANG Tao, LIU Yunze, WU Huishan, WANG Fengzhi, PAN Xinhua, YE Zhizhen
المصدر: Cailiao gongcheng, Vol 51, Iss 10, Pp 13-26 (2023)
مصطلحات موضوعية: ga2o3, wide band gap oxide semiconductor, solar-blind uv, photo detector, Materials of engineering and construction. Mechanics of materials, TA401-492
وصف الملف: electronic resource
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4Academic JournalTuning Ga2O3-based avalanche photodetectors performance through barrier layer thickness optimization
المؤلفون: Qingyi Zhang, Dianmeng Dong, Fan Zhang, Yang Zhang, Zhenping Wu
المصدر: Materials & Design, Vol 239, Iss , Pp 112823- (2024)
مصطلحات موضوعية: Ga2O3, Solar-blind, Avalanche photodetector, Unipolar barrier, Materials of engineering and construction. Mechanics of materials, TA401-492
وصف الملف: electronic resource
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5Academic Journal
المؤلفون: Hong Jia, Rui Zhang, Xuying Niu, Xian Zhang, Hui Zhou, Xiaofeng Liu, Zaijin Fang, Fei Chang, Bai‐Ou Guan, Jianrong Qiu
المصدر: Advanced Science, Vol 11, Iss 12, Pp n/a-n/a (2024)
مصطلحات موضوعية: down‐conversion, fluoride glass, solar‐blind UV photoelectric detection, Tb3+ ions, Science
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2198-3844
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6Academic Journal
المصدر: Sensors, Vol 24, Iss 16, p 5345 (2024)
مصطلحات موضوعية: alpha radiation detection, radioluminescence, alpha fluorescence, long-distance monitoring, solar-blind detector, Chemical technology, TP1-1185
وصف الملف: electronic resource
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7Academic Journal
المؤلفون: Zuyong Yan, Shan Li, Zeng Liu, Jianying Yue, Xueqiang Ji, Jinjin Wang, Shanglin Hou, Gang Wu, Jingli Lei, Guobin Sun, Peigang Li, Weihua Tang
المصدر: Crystals, Vol 14, Iss 7, p 625 (2024)
مصطلحات موضوعية: Ga2O3, patterned sapphire substrates, solar blind, photodetector, Crystallography, QD901-999
وصف الملف: electronic resource
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8Academic Journal
المؤلفون: Yifei Wang, Zhenhua Lin, Jingli Ma, Yongyi Wu, Haidong Yuan, Dongsheng Cui, Mengyang Kang, Xing Guo, Jie Su, Jinshui Miao, Zhifeng Shi, Tao Li, Jincheng Zhang, Yue Hao, Jingjing Chang
المصدر: InfoMat, Vol 6, Iss 2, Pp n/a-n/a (2024)
مصطلحات موضوعية: amorphous Ga2O3, heterojunction, multifunctional, PCDTBT, solar‐blind photodetectors, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2567-3165
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9Academic Journal
المؤلفون: Chengcheng Zhang, Shiji Zhang, Jingzu Ding, Wenhui Wang, Zhangyu Cao, Tao Han, Feng Li, Xiangde Zhu, Lei Shan, Mingsheng Long
المصدر: Advanced Sensor Research, Vol 2, Iss 12, Pp n/a-n/a (2023)
مصطلحات موضوعية: heterostructure, HfSe2, InSe, photodetector, solar blind UV, Technology (General), T1-995, Science
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2751-1219
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10Academic Journal
المؤلفون: Xingyue Zhangyang, Lei Liu, Hongchang Cheng, Feifei Lu, Xin Guo, Jian Tian
المصدر: Journal of Materials Research and Technology, Vol 23, Iss , Pp 2177-2188 (2023)
مصطلحات موضوعية: AlGaN, Nanowires, Solar-blind, Photocathode, Photoelectron emission, Mining engineering. Metallurgy, TN1-997
وصف الملف: electronic resource
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11Academic Journal
المؤلفون: Yingxiang Li, Zebin Zhou, Hang Pan, Jian Chen, Yuchao Wang, Qiulin Qu, Dongjiu Zhang, Mingkai Li, Yinmei Lu, Yunbin He
المصدر: Journal of Materials Research and Technology, Vol 22, Iss , Pp 2174-2185 (2023)
مصطلحات موضوعية: Ga2O3, Graphene, Self-driven ultraviolet photodetector, Solar-blind, Mining engineering. Metallurgy, TN1-997
وصف الملف: electronic resource
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12Academic Journal
المصدر: IEEE Photonics Journal, Vol 15, Iss 3, Pp 1-5 (2023)
مصطلحات موضوعية: Deep-ultraviolet light emitting diodes (DUV-LEDs), solar-blind communications, non-line-of-sight (NLOS) wireless communications, eye pattern, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
وصف الملف: electronic resource
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13Academic Journal
المؤلفون: Shiqi Yan, Teng Jiao, Zijian Ding, Xinyu Zhou, Xingqi Ji, Xin Dong, Jiawei Zhang, Qian Xin, Aimin Song
المصدر: Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
مصطلحات موضوعية: avalanche photodetectors, Ga2O3, photo‐to‐dark current ratio, schottky junction, solar‐blind photodetectors, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2199-160X
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14
المؤلفون: Wang, Zhan, Wang, Xinyuan, Ma, Yan, Sun, Jing, Wang, Shaoqing, Jia, Yifan, He, Yunlong, Lu, Xiaoli, Lin, Danmei, Zhu, Qing, Shang, Yuequn, Liu, Lang, Chen, Haifeng, Ma, Xiaohua
المصدر: IEEE Electron Device Letters. 45(10):1879-1882
مصطلحات موضوعية: Photoconductivity, Detectors, Dark current, Voltage, Photodetectors, X-ray detection, Amorphous Ga2O3, MSM structure, high-temperature solar-blind detection
وصف الملف: print
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15Academic Journal
المؤلفون: Chongyang Zhang, Wenjie Dou, Xun Yang, Huaping Zang, Yancheng Chen, Wei Fan, Shaoyi Wang, Weimin Zhou, Xuexia Chen, Chongxin Shan
المصدر: Materials; Volume 16; Issue 13; Pages: 4742
مصطلحات موضوعية: Ga 2 O 3, microwire, detector, solar-blind, X-ray
وصف الملف: application/pdf
Relation: Electronic Materials; https://dx.doi.org/10.3390/ma16134742
الاتاحة: https://doi.org/10.3390/ma16134742
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16Academic Journal
المؤلفون: Jing-Chun Guo, Guang-Wu Sun, Ming-Ming Fan, Xu-Cheng Fu, Jia-Jia Yao, Yu-Dong Wang
المصدر: Micromachines; Volume 14; Issue 7; Pages: 1336
مصطلحات موضوعية: hydrothermal growth, Al-doped α-Ga 2 O 3 nanorod array, self-powered, solar-blind UV photodetection, photoelectrochemical cell
وصف الملف: application/pdf
Relation: A:Physics; https://dx.doi.org/10.3390/mi14071336
الاتاحة: https://doi.org/10.3390/mi14071336
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17Academic Journal
المؤلفون: Sangbin Park, Younghwa Yoon, Hyungmin Kim, Taejun Park, Kyunghwan Kim, Jeongsoo Hong
المصدر: Nanomaterials; Volume 13; Issue 5; Pages: 954
مصطلحات موضوعية: solar-blind ultraviolet, photodetector, self-powered, heterojunction, built-in potential
وصف الملف: application/pdf
Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano13050954
الاتاحة: https://doi.org/10.3390/nano13050954
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18Academic Journal
المؤلفون: I. V. Schemerov, A. Yu. Polyakov, A. V. Almaev, V. I. Nikolaev, S. P. Kobeleva, A. A. Vasilyev, V. D. Kirilov, A. I. Kochkova, V. V. Kopiev, Yu. O. Kulanchikov, И. В. Щемеров, А. Я. Поляков, А. В. Алмаев, В. И. Николаев, С. П. Кобелева, А. А. Васильев, В. Д. Кирилов, А. И. Кочкова, В. В. Копьев, Ю. О. Куланчиков
المساهمون: The research was supported by RSF (project No. 22-72-00010), Исследование выполнено за счет гранта Российского научного фонда (проект № 22-72-00010).
المصدر: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering; Том 26, № 2 (2023); 137-147 ; Известия высших учебных заведений. Материалы электронной техники; Том 26, № 2 (2023); 137-147 ; 2413-6387 ; 1609-3577 ; 10.17073/1609-3577-2023-2
مصطلحات موضوعية: растянутые экспоненты, solar-blind photodetectors, ultraviolet photodetectors, slow photoeffect, stretched exponents, солнечно-слепые фотодетекторы, ультрафиолетовые фотопреобразователи, замедленный фотоэффект
وصف الملف: application/pdf
Relation: https://met.misis.ru/jour/article/view/514/423; https://met.misis.ru/jour/article/downloadSuppFile/514/176; Pearton S.J., Yang J., Cary P.H., Ren F., Kim J., Tadjer M.J., Mastro M.A. A review of Ga2O3materials, processing, and devices. Applied Physics Reviews. 2018; 5: 011301. https://doi.org/10.1063/1.5006941; Pearton S.J., Ren F., Tadjer M., Kim J. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS. Journal of Applied Physics. 2018; 124: 220901. https://doi.org/10.1063/1.5062841; Zhang J., Shi J., Qi D.-C., Chen L, Zhang K.H.L. Recent progress on the electronic structure, defect, and doping properties of Ga2O3. APL Materials. 2020; 8(2): 020906. https://doi.org/10.1063/1.5142999; Xu Yu, An Z., Zhang L., Feng Q., Zhang J., Zhang C., Hao Y. Solar blind deep ultraviolet β-Ga2O3 photodetectors grown on sapphire by the Mist-CVD method. Optical Materials Express. 2018; 8(9): 2941–2947. https://doi.org/10.1364/OME.8.002941; Wei Y., Li X., Yang J., Liu C., Zhao J., Liu Y., Dong S. Interaction between hydrogen and gallium vacancies in β-Ga2O3. Scientific Reports. 2018; 8: 10142. https://doi.org/10.1038/s41598-018-28461-3; Ingebrigtsen M.E., Kuznetsov A.Yu., Svensson B.G., Alfieri G., Mihaila A., Badstübner U., Perron A., Vines L., Varley J.B. Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3. APL Materials. 2019; 7(2): 022510. https://doi.org/10.1063/1.5054826; Yoon Y., Kim S., Lee I.G., Cho B.J., Hwang W.S. Electrical and photocurrent properties of a polycrystalline Sn-doped β-Ga2O3 thin film. Materials Science in Semiconductor Processing. 2021; 121: 105430. https://doi.org/10.1016/j.mssp.2020.105430; Mcglone J.F., Xia Z., Zhang Y., Joishi C., Lodha S., Rajan S., Ringel S.A., Arehart A.R. Trapping effects in Si-doped-Ga2O3 MESFETs on an Fe-doped-Ga2O3 substrate. IEEE Electron Device Letters. 2018; 39(7): 1042—1045. https://doi.org/10.1109/LED.2018.2843344; Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Chernykh S.V., Oh S., Pearton S.J., Ren F., Kochkova A.I., Kim J. Defect states determining dynamic trapping-detrapping in β-Ga2O3 field-effect transistors. ECS Journal of Solid State Science and Technology. 2019; 8(7): Q3013. https://doi.org/10.1149/2.0031907jss; Xu J., Zheng W., Huang F. Gallium oxide solar-blind ultraviolet photodetectors: A review. Journal of Materials Chemistry C. 2019; 7(29): 8753—8770. https://doi.org/10.1039/C9TC02055A; Yakimov E.B., Polyakov A.Y., Shchemerov I.V., Smirnov N.B., Vasilev A.A., Vergeles P.S., Yakimov E.E., Chernykh A.V., Shikoh A.S., Ren F., Pearton S.J. Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation. APL Materials. 2020; 8(11): 111105. https://doi.org/10.1063/5.0030105; Yakimov E.B., Polyakov A.Y., Shchemerov I.V., Smirnov N.B., Vasilev A.A., Kochkova A.I., Vergeles P.S., Yakimov E.E., Chernykh A.V., Xian Minghan, Ren F., Pearton S.J. On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors. Journal of Alloys and Compounds. 2021; 879: 160394. https://doi.org/10.1016/j.jallcom.2021.160394; Oh S., Jung Y., Mastro M.A., Hite J.K., Eddy C.R., Kim J. Development of solar-blind photodetectors based on Si-implanted β-Ga2O3. Optics Express. 2015; 23(22): 28300—28305. https://doi.org/10.1364/OE.23.028300; Meng D.D., Ji X.Q., Wang D.F., Chen Z.W. Enhancement of responsivity in solar-blind UV detector with back-gate MOS structure fabricated on β-Ga2O3 films. Frontiers in Materials. 2021; 8: 672128. https://doi.org/10.3389/fmats.2021.672128; Tak B.R., Yang M.-M., Alexe M., Singh R. Deep-level traps responsible for persistent photocurrent in pulsed-laser-deposited β-Ga2O3 thin films. Crystals. 2021; 11(9): 1046. https://doi.org/10.3390/cryst11091046; Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Pearton S.J., Ren F., Chernykh A.V., Lagov P.B., Kulevoy T.V. Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si. APL Materials. 2018; 6(9): 096102. https://doi.org/10.1063/1.5042646; Yakovlev N.N., Almaev A.V., Butenko P.N., Mikhaylov A.N., Pechnikov A.I., Stepanov S.I., Timashov R.B., Chikiryaka A.V., Nikolaev V.I. Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity. Material Physics and Mechanics. 2022; 48(3): 301—307. https://doi.org/10.18149/MPM.4832022_1; Dobaczewski L., Peaker A.R., Bonde N.K. Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors. Journal of Applied Physics. 2004; 96(9): 4689—4728. https://doi.org/10.1063/1.1794897; Zheng X., Feng S., Zhang Y., Yang J. Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy. Microelectronics Reliability. 2016; 63: 46—51. https://doi.org/10.1016/j.microrel.2016.05.001; Aoki Y., Wiemann C., Feyer V., Kim H.-S., Schneider C.M., Ill-Y.H., Martin M. Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour. Nature Communications. 2014; 5: 3473. https://doi.org/10.1038/ncomms4473; Polyakov A.Y., Smirnov N.B., Shchemerov I.V., Lee I.-H., Jang T., Dorofeev A.A., Gladysheva N.B., Kondratyev E.S., Turusova Y.A., Zinovyev R.A., Turutin A.V., Ren F., Pearton S. J. Current relaxation analysis in AlGaN/GaN high electron mobility transistors. Journal of Vacuum Science & Technology B. 2017; 35(1): 011207. https://doi.org/10.1116/1.4973973; Mitrofanov O., Manfra M. Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors. Superlattices and Microstructures. 2003; 34(1-2): 33—53. https://doi.org/10.1016/j.spmi.2003.12.002; Polyakov A., Nikolaev V., Stepanov S., Almaev A., Pechnikov A., Yakimov E., Kushnarev B.O., Shchemerov I., Scheglov M., Chernykh A., Vasilev A., Kochkova A., Pearton S.J. Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers. Journal of Applied Physics. 2022; 131(21): 215701. https://doi.org/10.1063/5.0090832; Polyakov A.Y., Nikolaev V.I., Tarelkin S.A., Pechnikov A.I., Stepanov S.I., Nikolaev A.E., Shchemerov I.V., Yakimov E.B., Luparev N.V., Kuznetsov M.S., Vasilev A.A., Kochkova A.I., Voronova M.I., Scheglov M.P., Kim J., Pearton S.J. Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates. Journal of Applied Physics. 2021; 129(18): 185701. https://doi.org/10.1063/5.0044531; Polyakov A.Y., Nikolaev V.I., Stepanov S.I., Pechnikov A.I., Yakimov E.B., Smirnov N.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Chernykh A.V., Pearton S.J. Editors’ choice — electrical properties and deep traps in α-Ga2O3:Sn films grown on sapphire by halide vapor phase epitaxy. ECS Journal of Solid State Science and Technology. 2020; 9(4): 045003. https://doi.org/10.1149/2162-8777/ab89bb; Kim J., Pearton S.J., Fares C., Yang J., Ren F., Kim S., Polyakov A.Y. Radiation damage effects in Ga2O3 materials and devices. Journal of Materials Chemistry C. 2018; 7(1): 10—24. https://doi.org/10.1039/c8tc04193h; Polyakov A.Y., Nikolaev V.I., Meshkov I.N., Siemek K., Lagov P.B., Yakimov E.B., Pechnikov A.I., Orlov O.S., Sidorin A.A., Stepanov S.I., Shchemerov I.V., Vasilev A.A., Chernykh A.V., Losev A.A., Miliachenko A.D., Khrisanov I.A., Pavlov Yu.S., Kobets U.A., Pearton S.J. Point defect creation by proton and carbon irradiation of α-Ga2O3. Journal of Applied Physics. 2022; 132(3): 035701. https://www.doi.org/10.1063/5.0100359; https://met.misis.ru/jour/article/view/514
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19Academic Journal
المصدر: Crystals, Vol 13, Iss 1434, p 1434 (2023)
مصطلحات موضوعية: β-Ga 2 O 3 thin films, solar-blind ultraviolet photodetectors, ultra-high responsivity, imaging, Crystallography, QD901-999
Relation: https://www.mdpi.com/2073-4352/13/10/1434; https://doaj.org/toc/2073-4352; https://doaj.org/article/22b7d2741da74ee9b1f52a559db1d6cd
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20Academic Journal
المؤلفون: Mostaque, S., Kuddus, A., Rahman, M., Korotcenkov, G.S., Korotchenkov, G.S., Коротченков, Г., Hossain, J.
المصدر: Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 2, Photodetectors
مصطلحات موضوعية: application, casting, CdS, CdSe, CdTe, chemical bath deposition, Colloidal particles, Combined approach, Conductive inks, Core-shell, Detectivity, Dip coating, Flexible, HgTe, II-VI semiconductors, Inkjet ink composition, Inkjet printing, IR, Multicolor, photodetectors, quantum dots, Roll-to-roll technique, Screen printing, Semiconductor-polymer composites, sensitivity, Slip casting, Solar cells, Solar-blind deep ultraviolet, Solution-processed technology, Spin coating
وصف الملف: application/pdf