المؤلفون: Torrens Caldentey, Gabriel

المساهمون: University/Department: Universitat de les Illes Balears. Departament de Física

Thesis Advisors: Bota Ferragut, Sebastián Antonio

المصدر: TDX (Tesis Doctorals en Xarxa)

مصطلحات موضوعية: memorias, SRAM, 6T, 8T, CMOS, robustez, radiación, tolerancia, mitigación, soft error, single event upset, SEU, single event effect, SEE, SER, carga crítica, Qcrit, diseño, layout, partículas alfa, estabilidad, SNM, MBU, MCU, memories, SRAM, 6T, 8T, CMOS, robustness, radiation, tolerance, mitigation, soft error, single event upset, SEU, single event effect, SEE, SER, critical charge, Qcrit, design, layout, alpha particles, stability, SNM, MBU, MCU, memòries, SRAM, 6T, 8T, CMOS, robustesa, radiació, tolerància, mitigació, soft error, single event upset, SEU, single event effect, SEE, SER, càrrega crítica, Qcrit, disseny, layout, partícules alfa, estabilitat, SNM, MBU, MCU, Tecnología Electrónica

وصف الملف: application/pdf

URL الوصول: http://hdl.handle.net/10803/97291

المؤلفون: Jaime Cardenas Chavez, Dave Hiemstra, Adriana Noguera Cundar, Brayden Johnson, David Baik, Li Chen

المصدر: Energies, Vol 17, Iss 18, p 4725 (2024)

مصطلحات موضوعية: total ionizing dose (TID), 60Co, single-event effect (SEE), single-event transient (SET), proton beam, two-photon absorption laser, Technology

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1996-1073/17/18/4725; https://doaj.org/toc/1996-1073

URL الوصول: https://doaj.org/article/6afba0920cd1437bb45dfada04bd0302

المؤلفون: Haiyu Liu, Shulong Wang, Rong Zhao, Hao Ma, Lan Ma, Shijie Liu, Shupeng Chen, Hongxia Liu

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 539-545 (2023)

مصطلحات موضوعية: Deep learning, neural networks, FinFET, single event effect (SEE), drain transient current pulse, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10225300/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/43b536eea047447089b85326a9baffc5

المؤلفون: Tao Liu, Yuan Wang, Rongyao Ma, Hao Wu, Jingyu Tao, Yiren Yu, Zijun Cheng, Shengdong Hu

المصدر: Micromachines; Volume 14; Issue 5; Pages: 1074

مصطلحات موضوعية: silicon carbide (SiC), vertical diffuse metal-oxide-semiconductor field transistor (VDMOS), trench, superjunction (SJ), single-event effect (SEE), single-event transient (SET), single-event burnout (SEB), single-event gate rupture (SEGR), linear energy transfer (LET), charge enhancement factor (CEF)

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14051074

الاتاحة: https://doi.org/10.3390/mi14051074

المؤلفون: Rong Zhao, Shulong Wang, Shougang Du, Jinbin Pan, Lan Ma, Shupeng Chen, Hongxia Liu, Yilei Chen

المصدر: Micromachines; Volume 14; Issue 3; Pages: 502

مصطلحات موضوعية: deep neural network (DNN), FDSOI devices, single-event effect (SEE), drain transient current pulse

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/mi14030502

الاتاحة: https://doi.org/10.3390/mi14030502

المؤلفون: Jindou Xin, Xiang Zhu, Yingqi Ma, Jianwei Han

المصدر: Electronics; Volume 12; Issue 3; Pages: 550

مصطلحات موضوعية: CMOS devices, single event latch-up (SEL), single event effect (SEE), resistor, pulsed laser

وصف الملف: application/pdf

Relation: Microelectronics; https://dx.doi.org/10.3390/electronics12030550

الاتاحة: https://doi.org/10.3390/electronics12030550

المؤلفون: Für, Natalija, Belanche Guadas, Manuel, id_orcid:0 000-0002-1101-9554, Martinella, Corinna, Kumar, Piyush, Bathen, Marianne, id_orcid:0 000-0002-6269-3530, Grossner, Ulrike, id_orcid:0 000-0002-2495-8550

المصدر: IEEE Transactions on Nuclear Science, 70 (8)

مصطلحات موضوعية: Deep-level transient spectroscopy (DLTS), defects, degradation, heavy ion, junction barrier Schottky (JBS), microbeam, minority carrier transient spectroscopy (MCTS), silicon carbide (SiC) power diodes, single-event effect (SEE), single-event leakage current (SELC)

وصف الملف: application/application/pdf

Relation: info:eu-repo/semantics/altIdentifier/wos/001116676600050; http://hdl.handle.net/20.500.11850/629386

الاتاحة: https://hdl.handle.net/20.500.11850/629386
https://doi.org/10.3929/ethz-b-000629386

المؤلفون: D'Alessio, M., Poivey, C., Ferlet-Cavrois, V., Evans, H., Harboe-Sorensen, R., Keating, A., López Calle, Isabel, Guerre, F.X., Lochon, F., Santandrea, S., Zadeh, A., Muschitiello, M., Markgraf, M., Montenbruck, O., Grillenberger, N., Fleurinck, N., Puimege, K., Gerrits, D., Matthijs, P.

المساهمون: Ingeniería en Automática, Electrónica, Arquitectura y Redes de Computadores

المصدر: 4th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Oxford, UK, 2013, pp. 1-8

مصطلحات موضوعية: Time division multiplexing, Random access memory, Global Positioning System, Monitoring, Temperature sensors, Protons, Temperature measurement, Single Event Effect (SEE), Single Event Upset (SEU), Single Event Latch-up (SEL), radiation experiment, radiation monitor, Static Random Access Memory (SRAM), technology demonstration, hardness assurance

وصف الملف: application/pdf

Relation: http://hdl.handle.net/10498/30877

الاتاحة: http://hdl.handle.net/10498/30877
https://doi.org/10.1109/RADECS.2013.6937398

المؤلفون: Lucsanyi, David, Alia, Ruben Garcia, Bilko, Kacper, Cecchetto, Matteo, Fiore, Salvatore, Pirovano, Elisa

المساهمون: Lucsanyi, David, Alia, Ruben Garcia, Bilko, Kacper, Cecchetto, Matteo, Fiore, Salvatore, Pirovano, Elisa

مصطلحات موضوعية: Energy deposition, Geant4 (G4), Monte Carlo (MC) simulation, neutron irradiation, silicon diode, single-event effect (SEE)

Relation: volume:69; issue:3; firstpage:273; lastpage:281; numberofpages:9; journal:IEEE TRANSACTIONS ON NUCLEAR SCIENCE; https://hdl.handle.net/20.500.12079/71590; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85124712978

الاتاحة: https://hdl.handle.net/20.500.12079/71590
https://doi.org/10.1109/TNS.2022.3149989

المساهمون: An, Qi [Univ. of Science and Technology of China, Hefei (China). State Key Lab. of Particle Detection and Electronics; Univ. of Science and Technology of China, Hefei (China). Dept. of Modern Physics]

المصدر: Nuclear Science and Techniques; 25; 6

وصف الملف: Medium: ED; Size: 8 p.

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1177854

المؤلفون: Martinella, Corinna, Race, Salvatore, Für, Natalija, id_orcid:0 000-0002-1111-6485, Goncalves de Medeiros, Helton, Zhou, H., Brandl, Anja, Grossner, Ulrike, id_orcid:0 000-0002-2495-8550

المصدر: IEEE Transactions on Nuclear Science, 71 (8)

مصطلحات موضوعية: Broad beam, heavy ions, microbeam, microdose effects, silicon carbide (SiC) power MOSFETs, single-event effect (SEE), single-event leakage current (SELC), trench gate

Relation: info:eu-repo/semantics/altIdentifier/wos/001306481700027; http://hdl.handle.net/20.500.11850/695360

الاتاحة: https://hdl.handle.net/20.500.11850/695360

المؤلفون: Martinella, Corinna, Ziemann, Thomas, id_orcid:0 000-0001-5159-4919, Stark, Roger, Tsibizov, Alexander, Voss, Kay O., Alia, Ruben G., Kadi, Yacine, Grossner, Ulrike, id_orcid:0 000-0002-2495-8550, Javanainen, Arto

المصدر: IEEE Transactions on Nuclear Science, 67 (7)

مصطلحات موضوعية: Heavy ion, leakage current degradation, microbeam, silicon carbide (SiC) vertical double-diffused power(VD)-MOSFET, single-event effect (SEE), single-event leakage current (SELC)

وصف الملف: application/application/pdf

Relation: info:eu-repo/semantics/altIdentifier/wos/000550669800022; http://hdl.handle.net/20.500.11850/429961

الاتاحة: https://hdl.handle.net/20.500.11850/429961
https://doi.org/10.3929/ethz-b-000429961

المؤلفون: Yaa’cob, Norsuzila, Ayob, Muhammad Fauzan, Tajudin, Noraisyah, Kassim, Murizah, Yusof, Azita Laily

المصدر: Bulletin of Electrical Engineering and Informatics; Vol 10, No 1: February 2021; 39-45 ; 2302-9285 ; 2089-3191 ; 10.11591/eei.v10i1

مصطلحات موضوعية: CubeSat, Electrical power subsystem, Single event effect (SEE), Single event latch-up (SEL), Single event upset (SEU)

وصف الملف: application/pdf

Relation: https://beei.org/index.php/EEI/article/view/2488/1890; https://beei.org/index.php/EEI/article/view/2488

الاتاحة: https://beei.org/index.php/EEI/article/view/2488
https://doi.org/10.11591/eei.v10i1.2488

المؤلفون: Coronetti, Andrea, Alia, Ruben Garcia, Budroweit, Jan, Rajkowski, Tomasz, Costa Lopes, Israel Da, Niskanen, Kimmo, Soderstrom, Daniel, Cazzaniga, Carlo, Ferraro, Rudy, Danzeca, Salvatore, Mekki, Julien, Manni, Florent, Dangla, David, Virmontois, Cedric, Kerboub, Nourdine, Koelpin, Alexander, Saigné, Frédéric, Wang, Pierre, Pouget, Vincent, Touboul, Antoine, Javanainen, Arto, Kettunen, Heikki, Germanicus, Rosine Coq

المساهمون: European Organization for Nuclear Research (CERN), CERN Genève, German Aerospace Center (DLR), 3D Plus, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), University of Jyväskylä (JYU), Science and Technology Facilities Council (STFC), Centre National d'Études Spatiales Toulouse (CNES), Hamburg University of Technology (TUHH), Vanderbilt University Nashville, Laboratoire de cristallographie et sciences des matériaux (CRISMAT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0018-9499.

مصطلحات موضوعية: System verification, Space missions, Radiation effects, Performance evaluation, Total ionizing dose, Protons, Neutrons, Radiation hardening (electronics), Commercial off-the-shelf (COTS), Facilities, Radiation hardness assurance, Risk acceptance, Single-event effect (SEE), Small satelllites, System-level testing, Test methodology, Total ionizing dose (TID), [SPI.TRON]Engineering Sciences [physics]/Electronics, [PHYS.PHYS.PHYS-SPACE-PH]Physics [physics]/Physics [physics]/Space Physics [physics.space-ph]

الاتاحة: https://hal.science/hal-03341566
https://hal.science/hal-03341566v1/document
https://hal.science/hal-03341566v1/file/Radiation_Hardness_Assurance_Through_System-Level_Testing_Risk_Acceptance_Facility_Requirements_Test_Methodology_and_Data_Exploitation.pdf
https://doi.org/10.1109/TNS.2021.3061197

المؤلفون: Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Haiwu Xie

المصدر: Micromachines; Volume 12; Issue 6; Pages: 609

مصطلحات موضوعية: tunneling field-effect transistors (TFETS), single-event effect (SEE), T-shaped gate tunneling field-effect transistors (TGTFET), fully depleted silicon on insulator (FDSOI), linear energy transfer (LET)

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/mi12060609

الاتاحة: https://doi.org/10.3390/mi12060609

المؤلفون: Di Guglielmo, Giuseppe, Fahim, Farah, Herwig, Christian, Valentin, Manuel Blanco, Duarte, Javier, Gingu, Cristian, Harris, Philip, Hirschauer, James, Kwok, Martin, Loncar, Vladimir, Luo, Yingyi, Miranda, Llovizna, Ngadiuba, Jennifer, Noonan, Daniel, Ogrenci-Memik, Seda, Pierini, Maurizio, Summers, Sioni, Tran, Nhan

المصدر: IEEE Transactions on Nuclear Science, 68(8), 2179-2186, (2021-08)

مصطلحات موضوعية: Application-specific integrated circuit (ASIC), artificial intelligence (AI), autoencoder, hardware accelerator, high-level synthesis (HLS), Large Hadron Collider (LHC), machine learning (ML), single-event effect (SEE) mitigation

Relation: https://arxiv.org/abs/2105.01683; https://doi.org/10.1109/tns.2021.3087100; eprintid:109550

الاتاحة: https://doi.org/10.1109/tns.2021.3087100

المؤلفون: Coronetti, Andrea, García Alía, Rubén, Cecchetto, Matteo, Hajdas, Wojtek, Söderström, Daniel, Javanainen, Arto, Saigné, Frédéric

المساهمون: CERN Genève, Paul Scherrer Institute (PSI), University of Jyväskylä (JYU), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0018-9499 ; IEEE Transactions on Nuclear Science ; https://hal.science/hal-02911958 ; IEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1606-1613. ⟨10.1109/TNS.2020.2978228⟩.

مصطلحات موضوعية: Mesons, Large Hadron Collider, Single event upsets, Random access memory, Particle beams, Cross section, Neutrons, FLUKA, Pions, Protons, Radiation hardness assurance (RHA), Single-event effect (SEE), Soft error rate (SER), Hadron, Radiation: damage, Resonance: effect, Accelerator, Nuclear reaction, pi: interaction, n: flux, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]

Relation: hal-02911958; https://hal.science/hal-02911958; https://hal.science/hal-02911958/document; https://hal.science/hal-02911958/file/The_Pion_Single-Event_Effect_Resonance_and_its_Impact_in_an_Accelerator_Environment.pdf; INSPIRE: 1808320; WOS: 000550669800050

الاتاحة: https://hal.science/hal-02911958
https://hal.science/hal-02911958/document
https://hal.science/hal-02911958/file/The_Pion_Single-Event_Effect_Resonance_and_its_Impact_in_an_Accelerator_Environment.pdf
https://doi.org/10.1109/TNS.2020.2978228

المؤلفون: Jindou Xin, Yingqi Ma, Xiang Zhu, Jianwei Han

مصطلحات موضوعية: Single Event Effect (SEE), Single Event Upset (SEU), Single Event Latch-up (SEL), STT-MRAM, Pulsed Laser

الاتاحة: https://doi.org/10.57760/sciencedb.space.00510

المؤلفون: QUENON, Alexandre, Demarbaix, Anthonin, Daubie, Evelyne, Moeyaert, Véronique, Dualibe, Fortunato

المساهمون: F109 - Electronique et Microélectronique, S824 - Physique nucléaire et subnucléaire, Infortech

المصدر: IEEE Transactions on Instrumentation and Measurement, 72, 1-8 (2022)

مصطلحات موضوعية: Instrumentation, 3D printing, characterization, diode, ionizing radiation, real-time, single-event effect (SEE), Engineering, computing & technology, Electrical & electronics engineering, Mechanical engineering, Ingénierie, informatique & technologie, Ingénierie électrique & électronique, Ingénierie mécanique

Relation: https://ieeexplore.ieee.org/document/9980453; urn:issn:0018-9456; urn:issn:1557-9662; https://orbi.umons.ac.be/handle/20.500.12907/44219; info:hdl:20.500.12907/44219

الاتاحة: https://orbi.umons.ac.be/handle/20.500.12907/44219
https://hdl.handle.net/20.500.12907/44219
https://doi.org/10.1109/tim.2022.3228260

المؤلفون: Hongxia Liu, Shulong Wang, Chen Chong, Haiwu Xie, Shupeng Chen

المصدر: Micromachines
Volume 12
Issue 6
Micromachines, Vol 12, Iss 609, p 609 (2021)

مصطلحات موضوعية: Tunneling field effect transistor, Linear energy transfer, 02 engineering and technology, 01 natural sciences, Article, law.invention, fully depleted silicon on insulator (FDSOI), Single effect, law, 0103 physical sciences, TJ1-1570, Mechanical engineering and machinery, Electrical and Electronic Engineering, linear energy transfer (LET), Quantum tunnelling, single-event effect (SEE), 010302 applied physics, Physics, business.industry, Mechanical Engineering, Transistor, Charge (physics), 021001 nanoscience & nanotechnology, Thermal conduction, T-shaped gate tunneling field-effect transistors (TGTFET), Control and Systems Engineering, Optoelectronics, Current (fluid), 0210 nano-technology, business, tunneling field-effect transistors (TFETS)

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9949efd5eee601282131ebe82a97cf71
http://europepmc.org/articles/PMC8225217