المؤلفون: Yi-Wen Lin, Shan-Wen Lin, Bo-An Chen, Chong-Jhe Sun, Siao-Cheng Yan, Guang-Li Luo, Yung-Chun Wu, Fu-Ju Hou

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 480-484 (2023)

مصطلحات موضوعية: Self-aligned, Ge nanowire (NW), Si FinFET, complementary FET (CFET), single gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10233696/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/3577e1f2e6c947749d4160e51b7f0709

المؤلفون: Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 332-340 (2018)

مصطلحات موضوعية: Drift-diffusion (DD), Monte Carlo (MC) simulations, density gradient (DG) quantum corrections, Schrödinger equation based quantum corrections, Si FinFET, gate-all-around (GAA) nanowire (NW) FET, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8288601/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/edf10bca70f14f7dbb5c1f513b0fb80b

المؤلفون: Das, Uttam Kumar, Hussain, Muhammad Mustafa

المساهمون: Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division, Electrical and Computer Engineering Program, Integrated Nanotechnology Lab, MMH Laboratory, Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley, CA 94720 USA.

مصطلحات موضوعية: 2-D field-effect transistor (2D-FET), carbon nanotube FET, circuit simulation, CMOS logic, compact modeling, Si FinFET

وصف الملف: application/pdf

Relation: https://ieeexplore.ieee.org/document/9445221/; https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9445221; Das, U. K., & Hussain, M. M. (2021). Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic Application. IEEE Transactions on Electron Devices, 1–6. doi:10.1109/ted.2021.3081076; IEEE Transactions on Electron Devices; http://hdl.handle.net/10754/669357

الاتاحة: http://hdl.handle.net/10754/669357
https://doi.org/10.1109/TED.2021.3081076

المؤلفون: Antonio J. Garcia-Loureiro, Guillermo Indalecio, Karol Kalna, Natalia Seoane, Muhammad A. Elmessary, Daniel Nagy

المساهمون: Universidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Información, Universidade de Santiago de Compostela. Departamento de Electrónica e Computación

المصدر: Minerva. Repositorio Institucional de la Universidad de Santiago de Compostela
instname
IEEE Journal of the Electron Devices Society, Vol 6, Pp 332-340 (2018)

مصطلحات موضوعية: Gate-all-around (GAA) nanowire (NW) FET, Materials science, Nanowire, Silicon on insulator, 02 engineering and technology, density gradient (DG) quantum corrections, 01 natural sciences, Gallium arsenide, chemistry.chemical_compound, 0103 physical sciences, Electrical and Electronic Engineering, Monte Carlo (MC) simulations, Metal gate, Scaling, gate-all-around (GAA) nanowire (NW) FET, Si FinFET, 010302 applied physics, Subthreshold conduction, business.industry, Line edge roughness (LER), 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Schrödinger equation based quantum corrections, chemistry, Metal grain granularity (MGG), Logic gate, Density gradient (DG) quantum corrections, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:TK1-9971, Order of magnitude, Drift-diffusion (DD), Biotechnology

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c24678a56f5b5c15f3e8e8677c53395f
http://hdl.handle.net/10347/22457

المؤلفون: Universidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Información, Universidade de Santiago de Compostela. Departamento de Electrónica e Computación, Nagy, Daniel, Indalecio Fernández, Guillermo, García Loureiro, Antonio Jesús, Elmessary, Muhammad A., Seoane Iglesias, Natalia

مصطلحات الفهرس: Drift-diffusion (DD), Monte Carlo (MC) simulations, Density gradient (DG) quantum corrections, Schrödinger equation based quantum corrections, Si FinFET, Gate-all-around (GAA) nanowire (NW) FET, Metal grain granularity (MGG), Line edge roughness (LER), journal article

URL: http://hdl.handle.net/10347/22457
https://doi.org/10.1109/JEDS.2018.2804383
https://doi.org/10.1109/JEDS.2018.2804383
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TIN2013-41129-P/ES/SOLUCIONES HARDWARE Y SOFTWARE PARA LA COMPUTACION DE ALTAS PRESTACIONES
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TEC2014-59402-JIN/ES/ ESCALADO Y VARIABILIDAD DE TRANSISTORES TUNEL DE EFECTO CAMPO 3D BASADOS EN NANOHILOS USANDO SI, GE Y MATERIALES III-V
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TIN2016-76373-P/ES