المؤلفون: Yoshimichi Izawa, Akio Iwabuchi, Nobuo Kaneko, Masataka Yanagihara, Shinichi Iwakami, Osamu Machida, Toshihiro Ehara, Hirokazu Goto, Ryohei Baba

المصدر: Japanese Journal of Applied Physics. 46:L721-L723

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), business.industry, Transistor, Energy conversion efficiency, General Engineering, General Physics and Astronomy, Algan gan, Heterojunction, Power factor, Heterostructure field effect transistors, law.invention, Si substrate, law, Breakdown voltage, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5b97f327b799f0420389a768d6be7518
https://doi.org/10.1143/jjap.46.l721

المؤلفون: Toshihiro Ehara, Osamu Machida, Masataka Yanagihara, Nobuo Kaneko, Hirokazu Goto, Akio Iwabuchi, Shinichi Iwakami

المصدر: Japanese Journal of Applied Physics. 46:L587-L589

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), business.industry, Transistor, General Engineering, General Physics and Astronomy, Heterojunction, Algan gan, Epitaxy, Heterostructure field effect transistors, law.invention, Power (physics), Si substrate, law, Breakdown voltage, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5b4ca497eac30cf20f2a5ca65d0c906d
https://doi.org/10.1143/jjap.46.l587

المؤلفون: Osamu Machida, Akio Iwabuchi, Nobuo Kaneko, Masataka Yanagihara, Hirokazu Goto, Ryohei Baba, Shinichi Iwakami

المصدر: 2009 21st International Symposium on Power Semiconductor Devices & IC's.

مصطلحات موضوعية: Materials science, business.industry, Wide-bandgap semiconductor, Gallium nitride, Time-dependent gate oxide breakdown, Threshold voltage, chemistry.chemical_compound, chemistry, Gate oxide, MOSFET, Electrode, Optoelectronics, Breakdown voltage, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::24a34c4df66435e09cbd424242b558dd
https://doi.org/10.1109/ispsd.2009.5157992

المؤلفون: Emiko Chino, Nobuo Kaneko, Osamu Machida, Masataka Yanagihara, Kohji Ohtsuka, Hirokazu Goto, Shinichi Iwakami

المصدر: Japanese Journal of Applied Physics. 43:L831

مصطلحات موضوعية: Electron mobility, Materials science, business.industry, Transistor, General Engineering, General Physics and Astronomy, Heterojunction, Epitaxy, law.invention, law, Optoelectronics, Breakdown voltage, Metalorganic vapour phase epitaxy, Current (fluid), business, Sheet resistance

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d0e272b5f6e19c7de97848c6391e35e7
https://doi.org/10.1143/jjap.43.l831