نتائج البحث - "Shin Ishimatsu"

1

Academic Journal

In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering

المؤلفون: Shin ISHIMATSU, Shun-ichiro OHMI, Sohya KUDOH, Yuske HORIUCHI

المصدر: IEICE Transactions on Electronics. 2020, E103.C(6):299

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2

Academic Journal

Hf系MONOS型デバイスによる多値化(2-bit/cell)の検討 / Multi-level 2-bit/cell operation utilizing Hf-based MONOS device

المؤلفون: Shin Ishimatsu, Shun-ichiro Ohmi, Sohya Kudoh, Yusuke Horiuchi, 堀内勇介, 大見俊一郎, 工藤聡也, 石松慎

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :2780

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3

Academic Journal

Fabrication process dependence on Hf-based MONOS NVM / Hf系MONOS型不揮発性メモリの作製条件依存性

المؤلفون: Shin Ishimatsu, Shun-ichiro Ohmi, Sohya Kudoh, Yusuke Horiuchi, 堀内勇介, 大見俊一郎, 工藤聡也, 石松慎

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :2627

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4

Academic Journal

Hf系MONOS型不揮発性メモリによる保持特性の改善 / Improvement of retention characteristics utilizing Hf-based MONOS nonvolatile memory

المؤلفون: Mailig R.M.D, R.M.D Mailig, Shin Ishimatsu, Shun-ichiro Ohmi, Sohya Kudoh, Yusuke Horiuchi, 堀内勇介, 大見俊一郎, 工藤聡也, 石松慎

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :3003

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5

Academic Journal

A study on high-k HfN film formation utilizing ECR-N2 plasma nitridation / ECR-N2プラズマ窒化による高誘電率HfN絶縁膜の形成に関する検討

المؤلفون: Mailig Rengie Mark, Rengie Mark Mailig, Shin Ishimatsu, Shun-ichiro Ohmi, Sohya Kudoh, 大見俊一郎, 工藤聡也, 石松慎

المصدر: JSAP Annual Meetings Extended Abstracts. 2017, :2856

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6

Academic Journal

Hf-based MONOS nonvolatile memory fabricated by in-situ process / In-situプロセスによるHf系MONOS型不揮発性メモリの形成

المؤلفون: Mailig R.M.D., R.M.D. Mailig, Shin Ishimatsu, Shun-ichiro Ohmi, Sohya Kudoh, 大見俊一郎, 工藤聡也, 石松慎

المصدر: JSAP Annual Meetings Extended Abstracts. 2017, :2799

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7

In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering

المؤلفون: Sohya Kudoh, Shun-ichiro Ohmi, Yuske Horiuchi, Shin Ishimatsu

المصدر: IEICE Transactions on Electronics. :299-303

مصطلحات موضوعية: Plasma nitridation, In situ, Materials science, Sputtering, Analytical chemistry, Gate insulator, Plasma, Electrical and Electronic Engineering, Electron cyclotron resonance, Electronic, Optical and Magnetic Materials, High-κ dielectric

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9b16bdd18088a61c66c6cf3e91e36cb4
https://doi.org/10.1587/transele.2019fup0001

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8

Reduction of process temperature for Si surface flattening utilizing Ar/H2 ambient annealing and its application to SOI-MISFETs with bilayer HfN high-k gate insulator

المؤلفون: Shin Ishimatsu, Yusuke Horiuchi, Shun-ichiro Ohmi, Sohya Kudoh

المصدر: Japanese Journal of Applied Physics. 59:SCCB02

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4e79fb03d5940f743b2e4190a2fcfecc
https://doi.org/10.7567/1347-4065/ab5173

View record in OpenAIRE

9

Academic Journal

Reduction of process temperature for Si surface flattening utilizing Ar/H2 ambient annealing and its application to SOI-MISFETs with bilayer HfN high-k gate insulator.

المؤلفون: Shun-ichiro Ohmi, Yusuke Horiuchi, Shin Ishimatsu, Sohya Kudoh

المصدر: Japanese Journal of Applied Physics; 2020, Vol. 59 Issue SC, p1-1, 1p

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