نتائج البحث - "Shin, Ju Won"

المساهمون: National Research Foundation of Korea (NRF) funded by the Ministry of Science and Information and Communications Technology, Technology Innovation Program, Ministry of Trade, Industry & Energy

المصدر: IEEE Transactions on Electron Devices ; volume 70, issue 6, page 2988-2993 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2023.3268626
http://xplorestaging.ieee.org/ielx7/16/10136238/10113852.pdf?arnumber=10113852

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6

Academic Journal

Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression

المؤلفون: Chakraborty, Surajit, Shin, Ju-Won, Amir, Walid, Shin, Ki-Yong, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Kim, Dae-Hyun, Kim, Tae-Woo

المساهمون: National Research Foundation of Korea, Ministry of Science, ICT and Future Planning

المصدر: Solid-State Electronics ; volume 210, page 108788 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2023.108788
https://api.elsevier.com/content/article/PII:S0038110123002010?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110123002010?httpAccept=text/plain

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7

Academic Journal

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs.

المؤلفون: Shin, Ki-Yong¹ (AUTHOR), Shin, Ju-Won¹ (AUTHOR), Amir, Walid¹ (AUTHOR), Chakraborty, Surajit¹ (AUTHOR), Shim, Jae-Phil² (AUTHOR), Lee, Sang-Tae² (AUTHOR), Jang, Hyunchul² (AUTHOR), Shin, Chan-Soo² (AUTHOR), Kwon, Hyuk-Min³ (AUTHOR) hmkwon@kopo.ac.kr, Kim, Tae-Woo¹ (AUTHOR) hmkwon@kopo.ac.kr

المصدر: Materials (1996-1944). Sep2023, Vol. 16 Issue 18, p6138. 11p.

مصطلحات موضوعية: *INDIUM gallium arsenide, *MODULATION-doped field-effect transistors, *AUDITING standards, *GALLIUM arsenide, *NOISE measurement, *RADIO frequency, *ELECTRON traps, *ELECTRON mobility

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8

Academic Journal

Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

المؤلفون: Baek, Ji-Min, Kim, Hyo-Jin, Yoo, Ji-Hoon, Shin, Ju-Won, Shin, Ki-Yong, Amir, Walid, Ju, Gunwu, Kim, Hyung-Jun, Oh, Joohee, Kim, Hyoungsub, Kim, Tae-Woo, Kim, Dae-Hyun

المساهمون: National Research Foundation of Korea, Ministry of Science, ICT and Future Planning

المصدر: Solid-State Electronics ; volume 197, page 108447 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2022.108447
https://api.elsevier.com/content/article/PII:S0038110122002180?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110122002180?httpAccept=text/plain

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9

Academic Journal

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity.

المؤلفون: Chakraborty, Surajit, Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Cho, Chu-Young, Kim, Jae-Moo, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kwon, Hyuk-Min, Kim, Dae-Hyun, Kim, Tae-Woo

المصدر: Materials (1996-1944); Dec2022, Vol. 15 Issue 23, p8415, 14p

مصطلحات موضوعية: THERMAL resistance, MONOLITHIC microwave integrated circuits, THERMAL conductivity, GALLIUM nitride, MODULATION-doped field-effect transistors, MICROWAVE devices

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10

Periodical

An Explicit Thermal Resistance Model Regarding Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistor

المؤلفون: Chakraborty, Surajit, Shin, Ju Won, Amir, Walid, Shin, Ki Yong, Kim, Tae Woo

المصدر: Materials Science Forum; November 2022, Vol. 1074 Issue: 1 p125-131, 7p

11

Academic Journal

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors.

المؤلفون: Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Kim, Jae-Moo, Cho, Chu-Young, Park, Kyung-Ho, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae-Woo

المصدر: Scientific Reports; 11/17/2021, Vol. 11 Issue 1, p1-9, 9p

مصطلحات موضوعية: MODULATION-doped field-effect transistors, GALLIUM nitride, INDIUM gallium zinc oxide, FIELD-effect transistors, NOISE measurement, PERMITTIVITY

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12

Periodical

Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors

المؤلفون: Amir, Walid, Shin, Ju-Won, Chakraborty, Surajit, Shin, Ki-Yong, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae-Woo

المصدر: Physica Status Solidi (A) - Applications and Materials Science; July 2024, Vol. 221 Issue: 13

13

Periodical

Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

المؤلفون: Shim, Jae-Phil, Kim, Dong-Seok, Jang, Hyunchul, Shin, Ju-Won, Park, Deok-Soo, Kim, Donghyun, Shin, Chan-Soo, Shin, Seung Heon

المصدر: Japanese Journal of Applied Physics; February 2024, Vol. 63 Issue: 2 p020902-020902, 1p

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