-
1Report
المؤلفون: Liao, Fuyou, Guo, Zhongxun, Wang, Yin, Xie, Yufeng, Zhang, Simeng, Sheng, Yaochen, Tang, Hongwei, Xu, Zihan, Riaud, Antoine, Zhou, Peng, Wan, Jing, Fuhrer, Michael S., Jiang, Xiangwei, Zhang, David Wei, Chai, Yang, Bao, Wenzhong
مصطلحات موضوعية: Physics - Applied Physics, Condensed Matter - Materials Science
URL الوصول: http://arxiv.org/abs/1912.07873
-
2Academic Journal
المؤلفون: Xu, Hu, Zhang, Haima, Liu, Yawen, Zhang, Simeng, Sun, Yangye, Guo, Zhongxun, Sheng, Yaochen, Wang, Xudong, Luo, Chen, Wu, Xing, Wang, Jianlu, Hu, Weida, Xu, Zihan, Sun, Qingqing, Zhou, Peng, Shi, Jing, Sun, Zhengzong, Zhang, David Wei, Bao, Wenzhong
المصدر: Advanced Functional Materials. 29(4)
مصطلحات موضوعية: controlled doping, field effect transistors, PtSe2, transition metal dichalcogenides, Physical Sciences, Chemical Sciences, Engineering, Materials
URL الوصول: https://escholarship.org/uc/item/7zz7t586
-
3Academic Journal
المؤلفون: Chen, Xinyu, Xie, Yufeng, Sheng, Yaochen, Tang, Hongwei, Wang, Zeming, Wang, Yu, Wang, Yin, Liao, Fuyou, Ma, Jingyi, Guo, Xiaojiao, Tong, Ling, Liu, Hanqi, Liu, Hao, Wu, Tianxiang, Cao, Jiaxin, Bu, Sitong, Shen, Hui, Bai, Fuyu, Huang, Daming, Deng, Jianan, Riaud, Antoine, Xu, Zihan, Wu, Chenjian, Xing, Shiwei, Lu, Ye, Ma, Shunli, Sun, Zhengzong, Xue, Zhongyin, Di, Zengfeng, Gong, Xiao, Zhang, David Wei, Zhou, Peng, Wan, Jing, Bao, Wenzhong
المصدر: Nature Communications ; volume 12, issue 1 ; ISSN 2041-1723
-
4Academic Journal
المؤلفون: Ma, Shunli, Wang, Yan, Chen, Xinyu, Wu, Tianxiang, Wang, Xi, Tang, Hongwei, Yao, Yuting, Yu, Hao, Sheng, Yaochen, Ma, Jingyi, Ren, Junyan, Bao, Wenzhong
المساهمون: National Key Research and Development Program of China, Fudan University, NSFC, Shanghai Municipal Science and Technology Commission
المصدر: IEEE Access ; volume 8, page 197287-197299 ; ISSN 2169-3536
-
5Academic Journal
المؤلفون: Sheng, Yaochen, Zhang, LuFang, Li, Feng, Chen, Xinyu, Xie, Zhijian, Nan, Haiyan, Xu, Zihan, Zhang, David Wei, Chen, Jianhao, Pu, Yong, Xiao, Shaoqing, Bao, Wenzhong
المساهمون: National Key Research and Development Program, Shanghai Municipal Science and Technology Commission, National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities of China, Postgraduate Research and Practice Innovation Program of Jiangsu Province, Natural Science Foundation of Jiangsu Province, Oversea Researcher Innovation Program of Nanjing, NUPTSF
المصدر: Journal of Materials Science & Technology ; volume 69, page 15-19 ; ISSN 1005-0302
-
6Academic Journal
المؤلفون: Sheng, Yaochen, Chen, Xinyu, Liao, Fuyou, Wang, Yin, Ma, Jingyi, Deng, Jianan, Guo, Zhongxun, Bu, Sitong, Shen, Hui, Bai, Fuyu, Huang, Daming, Wang, Jianlu, Hu, Weida, Chen, Lin, Zhu, Hao, Sun, Qingqing, Zhou, Peng, Zhang, David Wei, Wan, Jing, Bao, Wenzhong
المساهمون: National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality, National Key Research and Development Program of China
المصدر: Advanced Electronic Materials ; volume 7, issue 7 ; ISSN 2199-160X 2199-160X
-
7Academic Journal
المؤلفون: Liao, Fuyou, Wang, Hongjuan, Guo, Xiaojiao, Guo, Zhongxun, Tong, Ling, Riaud, Antoine, Sheng, Yaochen, Chen, Lin, Sun, Qingqing, Zhou, Peng, Zhang, David Wei, Chai, Yang, Jiang, Xiangwei, Liu, Yan, Bao, Wenzhong
المصدر: Journal of Semiconductors ; volume 41, issue 7, page 072904 ; ISSN 1674-4926 2058-6140
-
8Academic Journal
المؤلفون: Chen, Jing, Wang, Qiyuan, Sheng, Yaochen, Cao, Gaoqi, Yang, Peng, Shan, Yabing, Liao, Fuyou, Muhammad, Zaheer, Bao, Wenzhong, Hu, Laigui, Liu, Ran, Cong, Chunxiao, Qiu, Zhi-Jun
المساهمون: Natural Science Foundation of Shanghai, Ministry of Education of the People's Republic of China, Ministry of Science and Technology of the People's Republic of China, Science and Technology Commission of Shanghai Municipality, National Natural Science Foundation of China, "First-Class Construction" project of Fudan University, State Key Laboratory of ASIC & System, Fudan University
المصدر: ACS Applied Materials & Interfaces ; volume 11, issue 46, page 43330-43336 ; ISSN 1944-8244 1944-8252
-
9Academic Journal
المؤلفون: Liao, Fuyou, Guo, Zhongxun, Wang, Yin, Xie, Yufeng, Zhang, Simeng, Sheng, Yaochen, Tang, Hongwei, Xu, Zihan, Riaud, Antoine, Zhou, Peng, Wan, Jing, Fuhrer, Michael S., Jiang, Xiangwei, Zhang, David Wei, Chai, Yang, Bao, Wenzhong
المساهمون: Ministry of Science and Technology of the People's Republic of China, Australian Research Council, National Natural Science Foundation of China
المصدر: ACS Applied Electronic Materials ; volume 2, issue 1, page 111-119 ; ISSN 2637-6113 2637-6113
-
10Academic Journal
المؤلفون: Liu, Bing, Sheng, Yaochen, Huang, Shenyang, Guo, Zhongxun, Ba, Kun, Yan, Hugen, Bao, Wenzhong, Sun, Zhengzong
المساهمون: Ministry of Science and Technology of the People's Republic of China, National Natural Science Foundation of China, Chinese Academy of Sciences, Central Committee of the Communist Party of China
المصدر: Chemistry of Materials ; volume 31, issue 16, page 6105-6109 ; ISSN 0897-4756 1520-5002
-
11Periodical
المؤلفون: Ma, Jingyi, Chen, Xinyu, Sheng, Yaochen, Tong, Ling, Guo, Xiaojiao, Zhang, Minxing, Luo, Chen, Zong, Lingyi, Xia, Yin, Sheng, Chuming, Wang, Yin, Gou, Saifei, Wang, Xinyu, Wu, Xing, Zhou, Peng, Zhang, David Wei, Wu, Chenjian, Bao, Wenzhong
المصدر: Journal of Materials Science & Technology; Apr2022, Vol. 106, p243-248, 6p
مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, FIELD-effect transistors, THRESHOLD voltage, SEMICONDUCTORS, ALUMINUM oxide, LOGIC circuits, TRANSMISSION electron microscopes
-
12Academic Journal
المؤلفون: Sheng, Yaochen, Chen, Xinyu, Liao, Fuyou, Wang, Yin, Ma, Jingyi, Deng, Jianan, Guo, Zhongxun, Bu, Sitong, Shen, Hui, Bai, Fuyu, Huang, Daming, Wang, Jianlu, Hu, Weida, Chen, Lin, Zhu, Hao, Sun, Qingqing, Zhou, Peng, Zhang, David Wei, Wan, Jing, Bao, Wenzhong
المصدر: Advanced Electronic Materials; Jul2021, Vol. 7 Issue 7, p1-8, 8p
مصطلحات موضوعية: FIELD-effect transistors, DOPING agents (Chemistry), METAL oxide semiconductor field-effect transistors, HYSTERESIS, ORGANIC field-effect transistors, TRANSITION metals, INDUCTIVE effect, ENGINEERING
-
13Academic Journal
المؤلفون: Liao, Fuyou, Wang, Hongjuan, Guo, Xiaojiao, Guo, Zhongxun, Tong, Ling, Riaud, Antoine, Sheng, Yaochen, Chen, Lin, Sun, Qingqing, Zhou, Peng, Zhang, David Wei, Chai, Yang, Jiang, Xiangwei, Liu, Yan, Bao, Wenzhong
المصدر: Journal of Semiconductors; Jul2020, Vol. 41 Issue 7, p1-5, 5p
-
14Academic Journal
المؤلفون: Chen, Jing, Wang, Qiyuan, Sheng, Yaochen, Cao, Gaoqi, Yang, Peng, Shan, Yabing, Liao, Fuyou, Muhammad, Zaheer, Bao, Wenzhong, Hu, Laigui, Liu, Ran, Cong, Chunxiao, Qiu, Zhi-Jun
المصدر: ACS Applied Materials & Interfaces; 11/20/2019, Vol. 11 Issue 46, p43330-43336, 7p
-
15Periodical
المؤلفون: Chen, Jing, Wang, Qiyuan, Sheng, Yaochen, Cao, Gaoqi, Yang, Peng, Shan, Yabing, Liao, Fuyou, Muhammad, Zaheer, Bao, Wenzhong, Hu, Laigui, Liu, Ran, Cong, Chunxiao, Qiu, Zhi-Jun
المصدر: ACS Applied Materials & Interfaces; November 2019, Vol. 11 Issue: 46 p43330-43336, 7p
-
16Academic Journal
المؤلفون: Xu, Hu, Zhang, Haima, Liu, Yawen, Zhang, Simeng, Sun, Yangye, Guo, Zhongxun, Sheng, Yaochen, Wang, Xudong, Luo, Chen, Wu, Xing, Wang, Jianlu, Hu, Weida, Xu, Zihan, Sun, Qingqing, Zhou, Peng, Shi, Jing, Sun, Zhengzong, Zhang, David Wei, Bao, Wenzhong
المصدر: Advanced Functional Materials; 1/24/2019, Vol. 29 Issue 4, pN.PAG-N.PAG, 1p
مصطلحات موضوعية: PLATINUM compounds, TRANSITION metal chalcogenides, METALLIC films, SEMICONDUCTOR wafers, FIELD-effect transistors