المؤلفون: El Dirani, H., Parihar, M.S., Lacord, J., Martinie, S., Barbe, J-Ch., Mescot, X., Fonteneau, P., Broquin, J., Ghibaudo, G., Galy, Ph., Gamiz, F., Taur, Y., Kim, Y., Cristoloveanu, S., Bawedin, M., Lee, K.H.

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), STMicroelectronics Crolles (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Universidad de Granada = University of Granada (UGR), Department of Electrical and Computer Engineering Univ California San Diego (ECE - UC San Diego), University of California San Diego (UC San Diego), University of California (UC)-University of California (UC), Korea Advanced Institute of Science and Technology (KAIST), European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016)

المصدر: 20th International Conference on Insulating Films on Semiconductors (INFOS 2017)
https://hal.science/hal-02071682
20th International Conference on Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany

مصطلحات موضوعية: 1T-DRAM, Low-power Embedded memory, Z2-FET, Sharp switch, Fully Depleted Silicon-On-Insulator (FDSOI), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Potsdam, Germany

Relation: info:eu-repo/grantAgreement//687931/EU/Revolutionary embedded memory for internet of things devices and energy reduction/REMINDER

الاتاحة: https://hal.science/hal-02071682

المؤلفون: El Dirani, H., Solaro, Y., Fonteneau, P., Legrand, C., Marin-Cudraz, D., Golanski, D., Ferrari, P., Cristoloveanu, S.

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), STMicroelectronics Crolles (ST-CROLLES), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015)

المصدر: 2016 EUROSOI-ULIS Proceedings
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
https://hal.science/hal-02006226
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.131-134, ⟨10.1109/ULIS.2016.7440070⟩

مصطلحات موضوعية: Zero Gate and Zero subthreshold slope FET (Z3-FET), Sharp Switch, Electro-Static Discharge (ESD), Fully Depleted Silicon-On-Insulator (FDSOI), Zero Impact Ionization, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Vienna, Austria

Relation: info:eu-repo/grantAgreement//662175/EU/Which Architecture Yields Two Other Generations Of Fully depleted Advanced Substrate and Technologies/WAYTOGO FAST

الاتاحة: https://hal.science/hal-02006226
https://doi.org/10.1109/ULIS.2016.7440070

المؤلفون: Cristoloveanu, Sorin, Bawedin, Maryline

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015), European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016)

المصدر: 2016 ESSDERC Proceedings
2016 ESSDERC - 46th European Solid-State Device Research Conference
https://hal.science/hal-02006285
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.117-120, ⟨10.1109/ESSDERC.2016.7599602⟩

مصطلحات موضوعية: FDSOI, TFET, MOSFET, CMOS, sharp switch, band modulation, 1T-DRAM, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Lausanne, Switzerland

Relation: info:eu-repo/grantAgreement//662175/EU/Which Architecture Yields Two Other Generations Of Fully depleted Advanced Substrate and Technologies/WAYTOGO FAST; info:eu-repo/grantAgreement//687931/EU/Revolutionary embedded memory for internet of things devices and energy reduction/REMINDER

الاتاحة: https://hal.science/hal-02006285
https://doi.org/10.1109/ESSDERC.2016.7599602

المؤلفون: El Dirani, H., Fonteneau, P., Solaro, Y., Ferrari, P., Cristoloveanu, S.

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), STMicroelectronics Crolles (ST-CROLLES), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015)

المصدر: 2016 ESSDERC Proceedings
2016 ESSDERC - 46th European Solid-State Device Research Conference
https://hal.science/hal-02006273
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.210-213, ⟨10.1109/ESSDERC.2016.7599623⟩

مصطلحات موضوعية: Sharp Switch, 1T-DRAM, Hysteresis, Ultra-Thin Body and BOX (UTBB), Zero Impact Ionization and Zero Subthreshold Slope FET, Dual Ground Planes, Electro-Static Discharge (ESD), Fully Depleted SOI (FDSOI), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Lausanne, Switzerland

Relation: info:eu-repo/grantAgreement//662175/EU/Which Architecture Yields Two Other Generations Of Fully depleted Advanced Substrate and Technologies/WAYTOGO FAST

الاتاحة: https://hal.science/hal-02006273
https://doi.org/10.1109/ESSDERC.2016.7599623

المؤلفون: Navarro, Carlos, Lacord, Joris, Parihar, Mukta Singh, Adamu-Lema, Fikru, Duan, Meng, Rodriguez, Noel, Cheng, Binjie, El Dirani, Hassan, Barbé, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Kim, Yong-Tae, Asenov, Asen, Cristoloveanu, Sorin, Gamiz, Francisco

المساهمون: Universidad de Granada = University of Granada (UGR), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), James Watt School of Engineering Univ Glasgow, University of Glasgow, Synopsys Inc., STMicroelectronics Crolles (ST-CROLLES), IBM Research Laboratory Zurich, IBM Research Zurich, Surecore, Leeds, Korea Advanced Institute of Science and Technology (KAIST), European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016)

المصدر: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-02006362 ; IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩.

مصطلحات موضوعية: 1T-DRAM, capacitorless, feedback effect, fully depleted (FD), ground plane, lifetime, sharp switch, silicon-on-insulator (SOI), Z²-FET, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: info:eu-repo/grantAgreement//687931/EU/Revolutionary embedded memory for internet of things devices and energy reduction/REMINDER

الاتاحة: https://hal.science/hal-02006362
https://hal.science/hal-02006362v1/document
https://hal.science/hal-02006362v1/file/150366.pdf
https://doi.org/10.1109/TED.2017.2751141

المؤلفون: Bedecarrats, Thomas, Fenouillet-Beranger, Claire, Cristoloveanu,, Sorin, Galy, Philippe

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics Crolles (ST-CROLLES)

المصدر: 2018 S3S Proceedings
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
https://hal.science/hal-02010234
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.10.5, ⟨10.1109/S3S.2018.8640159⟩

مصطلحات موضوعية: Sharp-switch, FD-SOI, body contact, BIMOS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: San Francisco, United States

الاتاحة: https://hal.science/hal-02010234
https://doi.org/10.1109/S3S.2018.8640159

المؤلفون: Lee, K., Dirani, H. El, Fonteneau, P., Bawedin, M., Sato, S., Cristoloveanu, S.

المساهمون: STMicroelectronics Crolles (ST-CROLLES), STMicroelectronics Grenoble (ST-GRENOBLE), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )

المصدر: 2018 ESSDERC Proceedings
2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC)
https://hal.science/hal-02007707
2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.74-77, ⟨10.1109/ESSDERC.2018.8486915⟩

مصطلحات موضوعية: Dual Ground Planes, Z2-FET, Fully Depleted SOI (FDSOI), band-modulation, Logic Switch, Sharp Switch, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Dresden, Germany

الاتاحة: https://hal.science/hal-02007707
https://doi.org/10.1109/ESSDERC.2018.8486915

المؤلفون: Joris Lacord, Campbell Millar, Mukta Singh Parihar, Pascal Fonteneau, Hassan El Dirani, Yong Tae Kim, Sorin Cristoloveanu, Maryline Bawedin, Jean-Charles Barbe, Francisco Gamiz, Noel Rodriguez, Siegfried Karg, Paul Wells, Asen Asenov, Binjie Cheng, Carlos Navarro, M. Duan, Philippe Galy, Cyrille Le Royer, Fikru Adamu-Lema

المساهمون: University of Granada [Granada], Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), James Watt School of Engineering [Univ Glasgow], University of Glasgow, Synopsys Inc., STMicroelectronics [Crolles] (ST-CROLLES), IBM Research Laboratory [Zurich], IBM Research [Zurich], Surecore, Leeds, Korea Advanced Institute of Science and Technology (KAIST), European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016), Universidad de Granada = University of Granada (UGR)

المصدر: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
Digibug. Repositorio Institucional de la Universidad de Granada
instname

مصطلحات موضوعية: Engineering, Z²-FET, Z2-FET, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, eDRAM, Semiconductor memories, 01 natural sciences, fully depleted (FD), 1T-DRAM, Capacitorless, capacitorless, Low-power, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Ground plane, Electrical and Electronic Engineering, Diffusion (business), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Silicon-on-insulator, 010302 applied physics, lifetime, Hardware_MEMORYSTRUCTURES, business.industry, Reading (computer), ground plane, Electrical engineering, Charge (physics), Feedback effect, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, sharp switch, Fully depleted (FD), Sharp switch, T-Dram, Logic gate, feedback effect, State (computer science), 0210 nano-technology, business, silicon-on-insulator (SOI), Lifetime, Dram

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68bcecf5bf95538fa18e097025f95e0e
https://hal.archives-ouvertes.fr/hal-02006362

المؤلفون: Philippe Galy, Claire Fenouillet-Beranger, Thomas Bedecarrats, Sorin Cristoloveanu

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES)

المصدر: 2018 S3S Proceedings
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.10.5, ⟨10.1109/S3S.2018.8640159⟩

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Silicon on insulator, body contact, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Temperature measurement, Subthreshold slope, Threshold voltage, Neuromorphic engineering, BIMOS, Logic gate, 0103 physical sciences, Optoelectronics, Sharp-switch, Bicmos integrated circuits, FD-SOI, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Metal gate, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c07360b22acac7beeaadd71d9a6e487
https://hal.science/hal-02010234

المؤلفون: Kyung Hwa Lee, S. Sato, Pascal Fonteneau, H. El Dirani, Sorin Cristoloveanu, Maryline Bawedin

المساهمون: STMicroelectronics [Crolles] (ST-CROLLES), STMicroelectronics [Grenoble] (ST-GRENOBLE), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

المصدر: 2018 ESSDERC Proceedings
2018 ESSDERC-48th European Solid-State Device Research Conference (ESSDERC)
2018 ESSDERC-48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.74-77, ⟨10.1109/ESSDERC.2018.8486915⟩
ESSDERC

مصطلحات موضوعية: Silicon on insulator, Z2-FET, 02 engineering and technology, Integrated circuit, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, 7. Clean energy, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Fully Depleted SOI (FDSOI), 010302 applied physics, Physics, business.industry, 021001 nanoscience & nanotechnology, Logic Switch, Subthreshold slope, Anode, Impact ionization, Hysteresis, Dual Ground Planes, Logic gate, Optoelectronics, 0210 nano-technology, business, Dram, band-modulation, Hardware_LOGICDESIGN, Sharp Switch

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04ae3768ecc14418592d392e8ec5b63c
https://hal.archives-ouvertes.fr/hal-02007707

المؤلفون: Navarro, C., Gamiz, F., Rodriguez, N., Donetti, L., Sampedro, C., Kim, Seong Il, Kim, Yong Tae, Cristoloveanu, S.

المساهمون: Universidad de Granada = University of Granada (UGR), Department of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST), Korea Advanced Institute of Science and Technology (KAIST), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )

المصدر: 2017 S3S Proceedings
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
https://hal.science/hal-02007136
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.13.3, ⟨10.1109/S3S.2017.8308748⟩

مصطلحات موضوعية: P-I-N diode, Thyristor, SCR, Sharp switch, Shockley diode, FD-SOI, Z2-FET, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Burlingame, United States

الاتاحة: https://hal.science/hal-02007136
https://doi.org/10.1109/S3S.2017.8308748

المؤلفون: Sorin Cristoloveanu, C. Fenouillet-Beranger, Philippe Ferrari, Yohann Solaro, Pascal Fonteneau, Charles-Alexandre Legrand

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: Solid-State Electronics
Solid-State Electronics, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, Elsevier, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩

مصطلحات موضوعية: Materials science, Z3-FET, Z2-FET, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, SOI, 010302 applied physics, business.industry, CMOS, Electrical engineering, Swing, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Impact ionization, Sharp switch, Modulation, Band modulation, Free surface, Optoelectronics, 0210 nano-technology, business, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4ade0a70d60cdc511cb1a1affe7908f
https://doi.org/10.1016/j.sse.2015.10.010

المؤلفون: Carlos Sampedro, Seong Il Kim, Noel Rodriguez, Sorin Cristoloveanu, Yong Tae Kim, Carlos Navarro, Francisco Gamiz, Luca Donetti

المساهمون: University of Granada [Granada], Department of Electrical Engineering [Korea Advanced Institute of Science and Technology] (KAIST), Korea Advanced Institute of Science and Technology (KAIST), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

المصدر: 2017 S3S Proceedings
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.13.3, ⟨10.1109/S3S.2017.8308748⟩

مصطلحات موضوعية: 010302 applied physics, Shockley diode, Materials science, business.industry, Doping, Z2-FET, Thyristor, P i n diode, Biasing, 02 engineering and technology, P-I-N diode, 021001 nanoscience & nanotechnology, 01 natural sciences, Sharp switch, 0103 physical sciences, Optoelectronics, FD-SOI, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, SCR, Diode

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c74ca16cb2f43fabd9ef15d68679340
https://doi.org/10.1109/s3s.2017.8308748

المؤلفون: Gerard Ghibaudo, Sorin Cristoloveanu, H. El Dirani, Yuan Taur, Sebastien Martinie, Kyung Hwa Lee, X. Mescot, Joris Lacord, J.-E. Broquin, Mukta Singh Parihar, Ph. Galy, M. Bawedin, Yong Tae Kim, Francisco Gamiz, Pascal Fonteneau, J-Ch. Barbe

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), University of Granada [Granada], Department of Electrical Engineering - University of California, University of California [San Diego] (UC San Diego), University of California-University of California, Korea Advanced Institute of Science and Technology (KAIST), European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016), Universidad de Granada = University of Granada (UGR), Department of Electrical and Computer Engineering [Univ California San Diego] (ECE - UC San Diego), University of California (UC)-University of California (UC)

المصدر: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2017, 178, pp.245-249. ⟨10.1016/j.mee.2017.05.047⟩
HAL
20th International Conference on Insulating Films on Semiconductors (INFOS 2017)
20th International Conference on Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany
Microelectronic Engineering, 2017, 178, pp.245-249. ⟨10.1016/j.mee.2017.05.047⟩

مصطلحات موضوعية: Computer science, Z2-FET, 02 engineering and technology, eDRAM, 01 natural sciences, 1T-DRAM, Memory cell, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Ultra low power, business.industry, Electrical engineering, Sense (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Modulation, Sharp switch, State (computer science), Fully Depleted Silicon-On-Insulator (FDSOI), 0210 nano-technology, business, Low-power Embedded memory, Dram, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e3d61f1fe991f951c7211f88f2b242e
https://hal.archives-ouvertes.fr/hal-01948006

المؤلفون: El Dirani, H., Solaro, Y., Fonteneau, P., Ferrari, P., Cristoloveanu, S.

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics Crolles (ST-CROLLES)

المصدر: 2015 ESSDERC Proceedings
2015 ESSDERC - 45th European Solid-State Device Research Conference
https://hal.science/hal-02004208
2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.250-253, ⟨10.1109/ESSDERC.2015.7324761⟩

مصطلحات موضوعية: 1T-DRAM, Zero Impact Ionization and Zero Subthreshold Slope FET (Z2-FET), Electro-Static Discharge (ESD), Sharp Switch, Fully Depleted SOI (FDSOI), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Graz, Austria

الاتاحة: https://hal.science/hal-02004208
https://doi.org/10.1109/ESSDERC.2015.7324761

المؤلفون: Sorin Cristoloveanu, Maryline Bawedin

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015), European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016)

المصدر: 2016 ESSDERC Proceedings
2016 ESSDERC-46th European Solid-State Device Research Conference
2016 ESSDERC-46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.117-120, ⟨10.1109/ESSDERC.2016.7599602⟩
ESSDERC

مصطلحات موضوعية: 010302 applied physics, Computer science, business.industry, CMOS, band modulation, Electrical engineering, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, FDSOI, sharp switch, 1T-DRAM, MOSFET, TFET, Logic gate, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4b0f4485da52b9021074b0d74a22fdd
https://hal.science/hal-02006285

المؤلفون: H. El Dirani, Yohann Solaro, Sorin Cristoloveanu, P. Ferrari, Pascal Fonteneau

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015)

المصدر: 2016 ESSDERC Proceedings
2016 ESSDERC-46th European Solid-State Device Research Conference
2016 ESSDERC-46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.210-213, ⟨10.1109/ESSDERC.2016.7599623⟩
ESSDERC

مصطلحات موضوعية: Materials science, Silicon on insulator, 02 engineering and technology, 01 natural sciences, 1T-DRAM, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electro-Static Discharge (ESD), Fully Depleted SOI (FDSOI), 010302 applied physics, business.industry, Hysteresis, Electrical engineering, Zero Impact Ionization and Zero Subthreshold Slope FET, 021001 nanoscience & nanotechnology, Subthreshold slope, Anode, Impact ionization, Modulation, Dual Ground Planes, Logic gate, Ultra-Thin Body and BOX (UTBB), Optoelectronics, 0210 nano-technology, business, Voltage, Sharp Switch

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e556a1be92f77eb0082d293dd8b93ca0
https://hal.archives-ouvertes.fr/hal-02006273

المؤلفون: Sorin Cristoloveanu, Yohann Solaro, H. El Dirani, P. Ferrari, D. Marin-Cudraz, Charles-Alexandre Legrand, Dominique Golanski, Pascal Fonteneau

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015)

المصدر: 2016 EUROSOI-ULIS Proceedings
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.131-134, ⟨10.1109/ULIS.2016.7440070⟩

مصطلحات موضوعية: Materials science, Silicon, chemistry.chemical_element, Low leakage, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Zero Gate and Zero subthreshold slope FET (Z3-FET), 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Zero Impact Ionization, High current, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electro-Static Discharge (ESD), 010302 applied physics, business.industry, Swing, 021001 nanoscience & nanotechnology, Impact ionization, chemistry, Modulation, Optoelectronics, Fully Depleted Silicon-On-Insulator (FDSOI), 0210 nano-technology, business, Hardware_LOGICDESIGN, Sharp Switch

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ec7bbf904c8a6c8ea5ea92a089edf3e
https://hal.archives-ouvertes.fr/hal-02006226

المؤلفون: El Dirani, H., Solaro, Y., Fonteneau, P., Ferrari, P., Cristoloveanu, S.

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES)

المصدر: 2015 ESSDERC Proceedings
2015 ESSDERC-45th European Solid-State Device Research Conference
2015 ESSDERC-45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.250-253, ⟨10.1109/ESSDERC.2015.7324761⟩

مصطلحات موضوعية: Zero Impact Ionization and Zero Subthreshold Slope FET (Z2-FET), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electro-Static Discharge (ESD), Fully Depleted SOI (FDSOI), 1T-DRAM, Sharp Switch

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8029d9d2cce4ed8184b46cf82568a9c8
https://hal.archives-ouvertes.fr/hal-02004208

المؤلفون: Wan, Jing

Thesis Advisors: Grenoble, Cristoloveanu, Sorin

مصطلحات موضوعية: Commutation abrupte, Silicium-sur-isolant (SOI), Tunnel FET, MOSFET, Rétroaction, Z2-FET, Cellule mémoire à un transistor., Sharp switch, Silicon-on-insulator (SOI), Tunneling FET, Feedback, Single-transistor memory

الاتاحة: http://www.theses.fr/2012GRENT052/document