يعرض 1 - 20 نتائج من 235 نتيجة بحث عن '"Shan, Fukai"', وقت الاستعلام: 0.57s تنقيح النتائج
  1. 1
    Academic Journal
    Solution-processed LiGdO solid electrolyte for an In 2 O 3 synaptic transistor and its application in neuromorphic computing

    المؤلفون: Du, Yixiao, Xiao, Wenlan, Miao, Guangtan, Yin, Zezhong, Ci, Ranran, Liu, Guoxia, Shan, Fukai

    المساهمون: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, National Key Research and Development Program of China

    المصدر: Journal of Materials Chemistry C ; volume 13, issue 3, page 1318-1324 ; ISSN 2050-7526 2050-7534

    الاتاحة: https://doi.org/10.1039/d4tc03443k
    http://pubs.rsc.org/en/content/articlepdf/2025/TC/D4TC03443K

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  2. 2
    Academic Journal
    Solution-processed LiGdO solid electrolyte for an In2O3 synaptic transistor and its application in neuromorphic computing.

    المؤلفون: Du, Yixiao, Xiao, Wenlan, Miao, Guangtan, Yin, Zezhong, Ci, Ranran, Liu, Guoxia, Shan, Fukai

    المصدر: Journal of Materials Chemistry C; 1/21/2025, Vol. 13 Issue 3, p1318-1324, 7p


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  3. 3
    Academic Journal
    High Current Gain MoS2 Bipolar Junction Transistor Based on Metal–Semiconductor Schottky Contacts.

    المؤلفون: Wang, Shichao, Liu, Qingliang, Niu, Wencheng, Zou, Xuming, Liu, Xingqiang, Wang, Jingli, Miao, Jinshui, Yang, Zhenyu, Shan, Fukai, Liao, Lei

    المصدر: Nano Letters; 1/8/2025, Vol. 25 Issue 1, p204-211, 8p


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  4. 4
    Periodical
    High Current Gain MoS2Bipolar Junction Transistor Based on Metal–Semiconductor Schottky Contacts

    المؤلفون: Wang, Shichao, Liu, Qingliang, Niu, Wencheng, Zou, Xuming, Liu, Xingqiang, Wang, Jingli, Miao, Jinshui, Yang, Zhenyu, Shan, Fukai, Liao, Lei

    المصدر: Nano Letters; January 2025, Vol. 25 Issue: 1 p204-211, 8p


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  5. 5
    Academic Journal
    Flexible metal oxide thin-film transistors produced by a nanofiber-to-film process.

    المؤلفون: Zhang, Danna, Miao, Guangtan, Liu, Guoxia, Shan, Fukai

    المصدر: Journal of Materials Chemistry C; 9/21/2024, Vol. 12 Issue 35, p14031-14036, 6p


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  6. 6
    Academic Journal
    Performance improvement of thin-film transistors with In 2 O 3 channel engineering

    المؤلفون: Han, Chengzhe, Wang, Junjie, Liu, Guoxia, Shan, Fukai

    المساهمون: National Key Research and Development Program of China, National Natural Science Foundation of China

    المصدر: Journal of Asian Ceramic Societies ; volume 10, issue 3, page 660-665 ; ISSN 2187-0764

    الاتاحة: http://dx.doi.org/10.1080/21870764.2022.2101597
    https://www.tandfonline.com/doi/pdf/10.1080/21870764.2022.2101597

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  7. 7
    Academic Journal
    Humidity effect on electrical performance and bias stability of solution-processed In 2 O 3 thin film transistor

    المؤلفون: Ding, Yanan, Ren, Yajie, Wang, Zifan, Qiu, Haiyang, Shan, Fukai, Liu, Guoxia

    المساهمون: the National Key Research and Development Program of China, the National Natural Science Foundation of China

    المصدر: Journal of Asian Ceramic Societies ; volume 10, issue 3, page 687-695 ; ISSN 2187-0764

    الاتاحة: http://dx.doi.org/10.1080/21870764.2022.2112373
    https://www.tandfonline.com/doi/pdf/10.1080/21870764.2022.2112373

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  8. 8
    Periodical
    Schottky Diodes Based on Amorphous Ga2O3 Thin Films by UV-Ozone Treatment

    المؤلفون: Chen, Limeng, Miao, Guangtan, Xie, Hongfu, Xiao, Wenlan, Liu, Guoxia, Shan, Fukai

    المصدر: IEEE Transactions on Electron Devices; November 2024, Vol. 71 Issue: 11 p6910-6914, 5p


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  9. 9
    Periodical
    Performance Enhancement of Solution-Processed p-Type CsPbBr3 TFT by Ultraviolet-Ozone Treatment

    المؤلفون: Xiao, Wenlan, Dong, Yao, Miao, Guangtan, Liu, Guoxia, Shan, Fukai

    المصدر: IEEE Transactions on Electron Devices; November 2024, Vol. 71 Issue: 11 p6764-6768, 5p


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  10. 10
    Periodical
    Oxygen Vacancy-Induced Synaptic Plasticity in InAlZnO Nanofiber Transistors for Low-Power Neuromorphic Electronics

    المؤلفون: Xiao, Wenlan, Dong, Yao, Ci, Ranran, Liu, Guoxia, Shan, Fukai

    المصدر: IEEE Transactions on Electron Devices; October 2024, Vol. 71 Issue: 10 p6430-6434, 5p


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  11. 11
    Academic Journal
    Fully solution-driven charge trapping synaptic transistor with low energy consumption for neuromorphic computing.

    المؤلفون: Xie, Hongfu, Miao, Guangtan, Liu, Guoxia, Shan, Fukai

    المصدر: Applied Physics Letters; 6/3/2024, Vol. 124 Issue 23, p1-7, 7p

    مصطلحات موضوعية: ARTIFICIAL neural networks, EXCITATORY postsynaptic potential, INHIBITORY postsynaptic potential, ENERGY consumption, TRANSISTORS, COMPLEMENTARY metal oxide semiconductors


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  12. 12
    Academic Journal
    Lead-free perovskites-based photonic synaptic devices with zero electric energy consumption.

    المؤلفون: Hao, Dandan, Yang, Di, Liang, Haixia, Huang, Jia, Shan, Fukai

    المصدر: SCIENCE CHINA Information Sciences; Jun2024, Vol. 67 Issue 6, p1-9, 9p


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  13. 13
    Academic Journal
    High Current Gain MoS 2 Bipolar Junction Transistor Based on Metal–Semiconductor Schottky Contacts

    المؤلفون: Wang, Shichao, Liu, Qingliang, Niu, Wencheng, Zou, Xuming, Liu, Xingqiang, Wang, Jingli, Miao, Jinshui, Yang, Zhenyu, Shan, Fukai, Liao, Lei

    المساهمون: National Key Research and Development Program of China, Natural Science Foundation of Qingdao Municipality, China National Funds for Distinguished Young Scientists, Shanghai Science and Technology Development Foundation, National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Youth Innovation Technology Project of Higher School in Shandong Province, China National Funds for Outstanding Young Scientists, CAS Project for Young Scientists in Basic Research

    المصدر: Nano Letters ; volume 25, issue 1, page 204-211 ; ISSN 1530-6984 1530-6992

    الاتاحة: https://doi.org/10.1021/acs.nanolett.4c04722
    https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c04722

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  14. 14
    Academic Journal
    Research progress of self-powered photodetectors based on halide perovskites

    المؤلفون: Wang, Ziwen, Yin, Zezhong, Yang, Zhenyu, Shan, Fukai, Huang, Jia, Hao, Dandan

    المساهمون: Natural Science Foundation of Shandong Province, National Natural Science Foundation of China

    المصدر: Chemical Engineering Journal ; volume 501, page 157512 ; ISSN 1385-8947

    الاتاحة: https://doi.org/10.1016/j.cej.2024.157512
    https://api.elsevier.com/content/article/PII:S138589472409003X?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:S138589472409003X?httpAccept=text/plain

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  15. 15
    Academic Journal
    Performance Enhancement of Solution-Processed p-Type CsPbBr 3 TFT by Ultraviolet-Ozone Treatment

    المؤلفون: Xiao, Wenlan, Dong, Yao, Miao, Guangtan, Liu, Guoxia, Shan, Fukai

    المساهمون: Natural Science Foundation of Shandong Province, National Key Research and Development Program of China, National Natural Science Foundation of China

    المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 11, page 6764-6768 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2024.3466835
    http://xplorestaging.ieee.org/ielx8/16/10736243/10705119.pdf?arnumber=10705119

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  16. 16
    Academic Journal
    Performance-Tunable MoS 2 Homojunction Photodiode Based on Different Built-In Electric Field

    المؤلفون: Zhu, Xiaokun, Niu, Wencheng, Fu, Houqiang, Miao, Jinshui, Huang, Hao, He, Xiaobo, Liu, Xingqiang, Zou, Xuming, Shan, Fukai, Yang, Zhenyu

    المساهمون: National Natural Science Foundation of China, Open Foundation of Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Science and Technology Base and Talent Special Project of Guangxi

    المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 3, page 2192-2195 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2024.3356470
    http://xplorestaging.ieee.org/ielx7/16/10457976/10416429.pdf?arnumber=10416429

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  17. 17
    Academic Journal
    Schottky Diodes Based on Amorphous Ga 2 O 3 Thin Films by UV-Ozone Treatment

    المؤلفون: Chen, Limeng, Miao, Guangtan, Xie, Hongfu, Xiao, Wenlan, Liu, Guoxia, Shan, Fukai

    المساهمون: National Key Research and Development Program of China, National Natural Science Foundation of China, Nature Science Foundation of Shandong Province

    المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 11, page 6910-6914 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2024.3456772
    http://xplorestaging.ieee.org/ielx8/16/10736243/10691926.pdf?arnumber=10691926

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  18. 18
    Academic Journal
    High-Sensitivity and Fast-Response Self-Powered Photodetectors Based on Lead-Free CsBi₃I 1₀/TiO₂ Heterojunction

    المؤلفون: Liu, Tianyi, Wang, Ziwen, Yang, Zhenyu, Yin, Zezhong, Liu, Dapeng, Zhao, Jing, Shan, Fukai, Hao, Dandan

    المساهمون: Nature Science Foundation of Shandong Province

    المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 9, page 5489-5493 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2024.3427609
    http://xplorestaging.ieee.org/ielx8/16/10645717/10605720.pdf?arnumber=10605720

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  19. 19
    Academic Journal
    UV-Ozone-Assisted Solution-Processed High-k ZrO₂for MoS₂ Field-Effect Transistors

    المؤلفون: Shi, Yepeng, Liu, Guoxia, Wu, Xiaomin, Zhou, Chengjie, Yang, Chengzhi, Yang, Zhenyu, Shan, Fukai

    المساهمون: National Key Research and Development Program of China, National Natural Science Foundation of China, Natural Science Foundation of Shandong Province

    المصدر: IEEE Transactions on Electron Devices ; volume 71, issue 4, page 2789-2793 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2024.3365459
    http://xplorestaging.ieee.org/ielx7/16/10482422/10445112.pdf?arnumber=10445112

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  20. 20
    Academic Journal
    Artificial synapses based on boron ions-modulated transistors for neuromorphic applications

    المؤلفون: Miao, Guangtan, Liu, Qingliang, Shi, Yepeng, Ci, Ranran, Liu, Guoxia, Shan, Fukai

    المساهمون: Natural Science Foundation of Shandong Province, National Key Research and Development Program of China, National Natural Science Foundation of China

    المصدر: Applied Physics Letters ; volume 124, issue 20 ; ISSN 0003-6951 1077-3118

    الاتاحة: http://dx.doi.org/10.1063/5.0203138
    https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0203138/19949511/203301_1_5.0203138.pdf

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