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1Academic Journal
المؤلفون: Cappelli, E, Orlando, S, Morandi, V, Servidori, M, Scilletta, C
المصدر: Journal of Physics: Conference Series ; volume 59, page 616-624 ; ISSN 1742-6588 1742-6596
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2Academic Journal
المؤلفون: Vanhellemont, J., Milita, S., Servidori, M., Higgs, V., Kissinger, G., Gramenova, E., Simoen, E., Jansen, P.
المصدر: ISSN: 1155-4320.
مصطلحات موضوعية: [PHYS.HIST]Physics [physics]/Physics archives
Relation: jpa-00249655; https://hal.science/jpa-00249655; https://hal.science/jpa-00249655/document; https://hal.science/jpa-00249655/file/ajp-jp3v7p1425.pdf
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3Academic Journal
المؤلفون: Capello, L., Metzger, T. H., Werner, M., van den Berg, J. A., Servidori, M., Ottaviano, L., Bongiorno, C., Mannino, G., Feudel, T., Herden, M., Holý, V.
المصدر: Journal of Applied Physics; 11/15/2006, Vol. 100 Issue 10, p103533, 10p, 1 Color Photograph, 2 Charts, 7 Graphs
مصطلحات موضوعية: METAL oxide semiconductors, DOPED semiconductors, ION implantation, SILICON crystals, X-ray scattering, TRANSMISSION electron microscopy, ANNEALING of crystals
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4Academic Journal
المؤلفون: Summonte, C., Rizzoli, R., Servidori, M., Milita, S., Nicoletti, S., Bianconi, M., Desalvo, A., Iencinella, D.
المصدر: Journal of Applied Physics; 10/1/2004, Vol. 96 Issue 7, p3998-4005, 8p, 2 Black and White Photographs, 1 Diagram, 3 Charts, 11 Graphs
مصطلحات موضوعية: SPECTRUM analysis, INDUSTRY classification, INFRARED spectroscopy, CHEMICAL vapor deposition, EXCIMER lasers, OPTICS, GAS lasers, SILICON
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5Academic Journal
المؤلفون: Cedola, A., Lagomarsino, S., Scarinci, F., Servidori, M., Stanic, V.
المصدر: Journal of Applied Physics; 2/15/2004, Vol. 95 Issue 4, p1662-1666, 5p, 3 Diagrams, 4 Graphs
مصطلحات موضوعية: LITHOGRAPHY, SEMICONDUCTORS, METALLIC oxides, SILICON, CHARGE coupled devices, WAVEGUIDES, X-rays
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6Academic Journal
المؤلفون: Lulli, G., Bianconi, M., Parisini, A., Sama, S., Servidori, M.
المصدر: Journal of Applied Physics; 10/1/2000, Vol. 88 Issue 7, p3993, 7p, 1 Black and White Photograph, 9 Graphs
مصطلحات موضوعية: SILICON, LATTICE dynamics
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7Academic Journal
المؤلفون: Milita, S., Servidori, M.
المصدر: Journal of Applied Physics. 6/1/1996, Vol. 79 Issue 11, p8278. 7p. 7 Graphs.
مصطلحات موضوعية: *ION implantation, *SILICON crystals
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8Academic Journal
المؤلفون: Fabbri, R., Servidori, M., Zani, A.
المصدر: Journal of Applied Physics. 11/15/1989, Vol. 66 Issue 10, p4715. 4p.
مصطلحات موضوعية: *STRAINS & stresses (Mechanics), *SILICON, *ION implantation, *X-ray diffraction
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9Academic Journal
المؤلفون: Servidori, M., Solmi, S., Zaumseil, P., Winter, U., Anderle, M.
المصدر: Journal of Applied Physics. 1/1/1989, Vol. 65 Issue 1, p98. 7p. 1 Black and White Photograph, 1 Chart, 11 Graphs.
مصطلحات موضوعية: *POINT defects, *PHOSPHORUS, *SILICON
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10Academic Journal
المؤلفون: Servidori, M., Šourek, Z., Solmi, S.
المصدر: Journal of Applied Physics. 9/1/1987, Vol. 62 Issue 5, p1723. 6p.
مصطلحات موضوعية: *SEMICONDUCTOR wafers, *ION implantation, *ANNEALING of crystals, *DISLOCATIONS in crystals
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11Academic Journal
المؤلفون: Servidori, M., Angelucci, R., Cembali, F., Negrini, P., Solmi, S., Zaumseil, P., Winter, U.
المصدر: Journal of Applied Physics. 3/1/1987, Vol. 61 Issue 5, p1834. 7p.
مصطلحات موضوعية: *CRYSTAL defects, *ANNEALING of crystals, *X-ray diffractometers, *TRANSMISSION electron microscopy
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12Academic Journal
المؤلفون: Armigliato, A., Servidori, M., Solmi, S., Vecchi, I.
المصدر: Journal of Applied Physics; May1977, Vol. 48 Issue 5, p1806-1812, 7p
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13Academic Journal
المؤلفون: Fabbri, R., Cembali, F., Servidori, M., Zani, A.
المصدر: Journal of Applied Physics; 8/15/1993, Vol. 74 Issue 4, p2359, 11p, 1 Chart, 20 Graphs
مصطلحات موضوعية: BORON, SILICON, THIN films, GERMANIUM
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14Academic Journal
المؤلفون: Corni, F., Frabboni, S., Ottaviani, G., Queirolo, G., Bisero, D., Bresolin, C., Fabbri, R., Servidori, M.
المصدر: Journal of Applied Physics; 3/15/1992, Vol. 71 Issue 6, p2644, 6p, 1 Black and White Photograph, 1 Chart, 7 Graphs
مصطلحات موضوعية: GERMANIUM, SILICON, EPITAXY, RECRYSTALLIZATION (Metallurgy), BACKSCATTERING
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15Academic Journal
المؤلفون: Parisini, A., Bourret, A., Armigliato, A., Servidori, M., Solmi, S., Fabbri, R., Regnard, J. R., Allain, J. L.
المصدر: Journal of Applied Physics; 3/1/1990, Vol. 67 Issue 5, p2320, 13p, 1 Black and White Photograph, 1 Chart, 7 Graphs
مصطلحات موضوعية: ARSENIC, SILICON, ANNEALING of metals, ELECTRON microscopy
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16Academic Journal
المؤلفون: Bentini, G. G., Servidori, M., Cohen, C., Nipoti, R., Drigo, A. V.
المصدر: Journal of Applied Physics; Mar1982, Vol. 53 Issue 3, p1525-1531, 7p
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17Academic Journal
المؤلفون: Bentini, G. G., Galloni, R., Gabilli, E., Nipoti, R., Olzi, E., Servidori, M., Turisini, G., Zignani, F.
المصدر: Journal of Applied Physics; Nov1981, Vol. 52 Issue 11, p6735-6742, 8p
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18
المؤلفون: Cappelli E, Orlando S, Morandi V, Servidori M, Sciletta C Cappelli E., Orlando S., Morandi V., Servidori M., Scilletta C.
المصدر: Eight International Conference on Laser Ablation, Banff /Canada), 2007
info:cnr-pdr/source/autori:Cappelli E, Orlando S, Morandi V, Servidori M and Sciletta C Cappelli E., Orlando S., Morandi V., Servidori M., Scilletta C./congresso_nome:Eight International Conference on Laser Ablation/congresso_luogo:Banff %2FCanada)/congresso_data:2007/anno:2007/pagina_da:/pagina_a:/intervallo_pagineمصطلحات موضوعية: nano-graphene, GI -XRD, fullere structures, TEM, Pulsed laser Deposition
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19Conference
المؤلفون: Mannino, G., Feudel, T., Pichler, P., Servidori, M.
Time: 670, 620, 530
Relation: European Materials Research Society (Spring Meeting) 2004; Symposium B "Material Science Issues in Advanced CMOS Source-Drain Engineering" 2004; EMRS 2004, Symposium B, Material Science Issues in Advanced CMOS Source-Drain Engineering; https://publica.fraunhofer.de/handle/publica/345853
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20Conference
المؤلفون: Alasia, F., Basile, G., D'Agostino, G., Peuto, A., Pettorruso, S., Becker, P., Bettin, H., Kuetgens, U., Stuempe, J., Valkiers, S., Taylor, P., De Bievre, P., Jensen, L., Servidori, M., Spirito, P., Zeni, L., Amato, G., Riemann, H., Haertwig, J., Ammon, Wv.
المصدر: Conference Digest Conference on Precision Electromagnetic Measurements ; page 558-559