المؤلفون: Min-Kyu Park, Joon Hwang, Soomin Kim, Wonjun Shin, Wonbo Shim, Jong-Ho Bae, Jong-Ho Lee, Seongjae Cho

المصدر: Scientific Reports, Vol 14, Iss 1, Pp 1-14 (2024)

مصطلحات موضوعية: Processing-in-memory (PIM), Memory wall, Charge-trap flash, poly-Si channel, Inference, Hardware neural network, Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/bb1c02645a3345f4bb1bfeed1e7d93b5

المؤلفون: Hansa Mahajan, Arati Kumari Shah, Soomin Kim, Seongjae Cho

المصدر: ACS Omega, Vol 9, Iss 23, Pp 24546-24557 (2024)

مصطلحات موضوعية: Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2470-1343

URL الوصول: https://doaj.org/article/0d39aad69b5240d89e71208df4fff331

المؤلفون: Arati Kumari Shah, Eou-Sik Cho, Jisun Park, Hyungsoon Shin, Seongjae Cho

المصدر: IEEE Access, Vol 11, Pp 53932-53938 (2023)

مصطلحات موضوعية: Integrate-and-fire neuron circuit, operational transconductance amplifier (OTA), fidelity, circuit simulation, stability, hardware-oriented spiking neural network (SNN), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10138568/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/8f89df6db54846eaa94fcdfce736b318

المؤلفون: Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae‐Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho

المصدر: Advanced Materials Interfaces, Vol 10, Iss 21, Pp n/a-n/a (2023)

مصطلحات موضوعية: neuromorphic system, resistive random‐access memory, synaptic plasticity, TiN nanocrystal, vertical resistive random‐access memory, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/ec51e234b85e4ed695b1c09d897c19d4

المؤلفون: Kannan Udaya Mohanan, Seongjae Cho, Byung-Gook Park

المصدر: Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-14 (2022)

مصطلحات موضوعية: Medium-temperature oxidation, Germanium oxide, Resistive-switching random-access memory (ReRAM), Low-power hardware neural network, Processing-in-memory (PIM), Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/1e4d86cb88fb4ffb9270ab9efc51fb79

المؤلفون: Srikrishna Sagar, Kannan Udaya Mohanan, Seongjae Cho, Leszek A. Majewski, Bikas C. Das

المصدر: Scientific Reports, Vol 12, Iss 1, Pp 1-12 (2022)

مصطلحات موضوعية: Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/4df761b2f4e74aefa4fd9901b5b3d092

المؤلفون: Arati Kumari Shah, Kannan Udaya Mohanan, Jisun Park, Hyungsoon Shin, Eou-Sik Cho, Seongjae Cho

المصدر: IET Circuits, Devices and Systems, Vol 2023 (2023)

مصطلحات موضوعية: Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1751-8598

URL الوصول: https://doaj.org/article/170d7f7527dd4c319acacccdab3ee39e

المؤلفون: Suhyun Bang, Sungjoon Kim, Kyungho Hong, Kannan U. Mohanan, Seongjae Cho, Woo Young Choi

المصدر: AIP Advances, Vol 12, Iss 12, Pp 125217-125217-6 (2022)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/21d9ea16cc404187bbb20b56dcacb7ec

المؤلفون: Minseo Noh, Dongyeol Ju, Seongjae Cho, Sungjun Kim

المصدر: Nanomaterials, Vol 13, Iss 21, p 2856 (2023)

مصطلحات موضوعية: neuromorphic system, resistive switching, ZnO, spike-timing-dependent plasticity, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/13/21/2856; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/6b43a4dd3ed544879e5db07b07e32e8d

المؤلفون: Md. Hasan Raza Ansari, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1282-1289 (2021)

مصطلحات موضوعية: Synaptic device, neuromorphic system, core-shell dual-gate, nanowire, flash memory, short-term potentiation (STP), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9531970/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/867c223c6c194f2bb12d904341c96356

المؤلفون: Dongyeon Kang, Jun Tae Jang, Shinyoung Park, Md. Hasan Raza Ansari, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Seongjae Cho, Dae Hwan Kim

المصدر: IEEE Access, Vol 9, Pp 59345-59352 (2021)

مصطلحات موضوعية: Hardware-oriented neuromorphic computing, parallel data processing, energy efficiency, synaptic transistor, amorphous indium-gallium-zinc-oxide, extended gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9400818/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/5006e47f327244c5b1389b94aa625031

المؤلفون: Eunseon Yu, Seongjae Cho, Kaushik Roy, Byung-Gook Park

المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 834-840 (2020)

مصطلحات موضوعية: Si-processing compatibility, short-term plasticity (STP), long-term plasticity (LTP), energy efficiency, quantum-well charge-trap synaptic transistor, linear weight tunability, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9146508/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/7268c898ec8a4ddeab1f6baf17f53610

المؤلفون: Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, Sungjun Kim

المصدر: IEEE Access, Vol 8, Pp 130678-130686 (2020)

مصطلحات موضوعية: Neuromorphic, synaptic device, zinc tin oxide, density function theory, neural network, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9144610/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/416a5877adb2467eb29a0ef8bf3986b5

المؤلفون: Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park

المصدر: IEEE Access, Vol 8, Pp 228720-228730 (2020)

مصطلحات موضوعية: Memristors, Monte Carlo simulation, resistive RAM (RRAM), silver, silicon nitride, synapse device, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9301470/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/ddfa17aac0524a3c9faa17e4191ddceb

المؤلفون: Ki Seok Kim, You Jin Ji, Ki Hyun Kim, Seunghyuk Choi, Dong-Ho Kang, Keun Heo, Seongjae Cho, Soonmin Yim, Sungjoo Lee, Jin-Hong Park, Yeon Sik Jung, Geun Young Yeom

المصدر: Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)

مصطلحات موضوعية: Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2041-1723

URL الوصول: https://doaj.org/article/f62d07bbb54d419fac39c2ce2a9b6298

المؤلفون: Eunseon Yu, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won‐Jun Lee, Jongwan Jung, Seongjae Cho

المصدر: ETRI Journal, Vol 41, Iss 6, Pp 829-837 (2019)

مصطلحات موضوعية: cmos technology, high hole mobility, low‐power high‐speed operation, nanowire fet, sige shell channel, sub‐10‐nm logic technology, valence‐band offset, Telecommunication, TK5101-6720, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1225-6463

URL الوصول: https://doaj.org/article/805c2fc8530d4402b99abdd3f57d621a

المؤلفون: Inyoung Lee, Hyojin Park, Quan The Nguyen, Garam Kim, Seongjae Cho, Ilhwan Cho

المصدر: Micromachines, Vol 13, Iss 4, p 508 (2022)

مصطلحات موضوعية: feedback field-effect transistor (FBFET), device optimization, on–off current ratio, subthreshold swing, TCAD, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/13/4/508; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/4ca802bc2b614e279974eb3c7e29de05

المؤلفون: Md. Hasan Raza Ansari, Udaya Mohanan Kannan, Seongjae Cho

المصدر: Nanomaterials, Vol 11, Iss 7, p 1773 (2021)

مصطلحات موضوعية: short-term potentiation (STP), long-term potentiation (LTP), charge-trap synaptic transistor, band-to-band tunneling, pattern recognition, neural network, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/11/7/1773; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/a854bc8e79ce4485879e16032563e758

المؤلفون: Hocheon Yoo, Keun Heo, Md. Hasan Raza Ansari, Seongjae Cho

المصدر: Nanomaterials, Vol 11, Iss 4, p 832 (2021)

مصطلحات موضوعية: electrical doping, 2D semiconductor material, transition metal dichalcogenide, graphene, atomically thin film, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/11/4/832; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/99d401805ded4957bba1c3f6474e582b

المؤلفون: Hyeonjeong Kim, Songyi Yoo, In-Man Kang, Seongjae Cho, Wookyung Sun, Hyungsoon Shin

المصدر: Micromachines, Vol 11, Iss 2, p 228 (2020)

مصطلحات موضوعية: one-transistor dynamic random-access memory (1t-dram), polysilicon, grain boundary, electron trapping, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/11/2/228; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/bf091c9032364f0488ed8263e34df201