المؤلفون: Armstrong, R., Coulon, P. M., Bozinakis, P., Martin, R. W., Shields, P. A.

المصدر: Armstrong , R , Coulon , P M , Bozinakis , P , Martin , R W & Shields , P A 2020 , ' Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach ' , Journal of Crystal Growth , vol. 548 , 125824 . https://doi.org/10.1016/j.jcrysgro.2020.125824

مصطلحات موضوعية: A1. Nanostructures, A1. Surface structure, A3. Metalorganic chemical vapor deposition, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds, /dk/atira/pure/subjectarea/asjc/3100/3104, name=Condensed Matter Physics, /dk/atira/pure/subjectarea/asjc/1600/1604, name=Inorganic Chemistry, /dk/atira/pure/subjectarea/asjc/2500/2505, name=Materials Chemistry

وصف الملف: application/pdf

الاتاحة: https://researchportal.bath.ac.uk/en/publications/4c48f45c-6012-4ee3-87e9-9ba44dcc00d9
https://doi.org/10.1016/j.jcrysgro.2020.125824
https://purehost.bath.ac.uk/ws/files/211376021/Creation_of_faceted_AlN_nanostructures_Final_Initial_Submission.pdf
https://purehost.bath.ac.uk/ws/files/211376023/CRYS_D_20_00415R1_Ammended_After_Reviewers_Comments.pdf
http://www.scopus.com/inward/record.url?scp=85089424698&partnerID=8YFLogxK

المؤلفون: Li, Kuang-Hui, Alotaibi, Hamad S., Sun, Haiding, Lin, Ronghui, Guo, Wenzhe, Torres-Castanedo, Carlos G., Liu, Kaikai, Galan, Sergio V., Li, Xiaohang

المساهمون: Advanced Semiconductor Laboratory, Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, Electrical Engineering Program, Material Science and Engineering Program, Physical Science and Engineering (PSE) Division

مصطلحات موضوعية: A1. Computer Simulation, A1. Heat Transfer, A3. Metalorganic Chemical Vapor Deposition Processes, B1. Nitrides, B2. Semiconducting Aluminum Compounds

وصف الملف: application/pdf

Relation: http://www.sciencedirect.com/science/article/pii/S0022024818300848; Li K-H, Alotaibi HS, Sun H, Lin R, Guo W, et al. (2018) Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling. Journal of Crystal Growth. Available: http://dx.doi.org/10.1016/j.jcrysgro.2018.02.031.; Journal of Crystal Growth; http://hdl.handle.net/10754/627195

الاتاحة: http://hdl.handle.net/10754/627195
https://doi.org/10.1016/j.jcrysgro.2018.02.031

المؤلفون: Lemettinen, J., Okumura, H., Kim, I., Rudzinski, M., Grzonka, J., Palacios, T., Suihkonen, S.

المساهمون: Department of Electronics and Nanoengineering, University of Tsukuba, Institute of Electronic Materials Technology, Massachusetts Institute of Technology MIT, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: A1. Polarity, A1. X-ray diffraction, A3. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds

وصف الملف: 50-56; application/pdf

Relation: Journal of Crystal Growth; Volume 487; Lemettinen , J , Okumura , H , Kim , I , Rudzinski , M , Grzonka , J , Palacios , T & Suihkonen , S 2018 , ' MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC ' , Journal of Crystal Growth , vol. 487 , pp. 50-56 . https://doi.org/10.1016/j.jcrysgro.2018.02.020; PURE UUID: fdb5ba81-7212-4936-af47-383a1e1beeb5; PURE ITEMURL: https://research.aalto.fi/en/publications/fdb5ba81-7212-4936-af47-383a1e1beeb5; PURE LINK: http://www.scopus.com/inward/record.url?scp=85042313183&partnerID=8YFLogxK; PURE LINK: https://arxiv.org/abs/1811.03534; PURE FILEURL: https://research.aalto.fi/files/29317887/ELEC_Polar_AlN_SiC_Lemettinen_accepted.pdf; https://aaltodoc.aalto.fi/handle/123456789/34654; URN:NBN:fi:aalto-201811095695

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/34654
https://doi.org/10.1016/j.jcrysgro.2018.02.020

المؤلفون: Lemettinen, J., Okumura, H., Kim, I., Kauppinen, C., Palacios, T., Suihkonen, S.

المساهمون: Department of Electronics and Nanoengineering, University of Tsukuba, Massachusetts Institute of Technology MIT, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: A1. Polarity, A1. X-ray diffraction, A3. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds

وصف الملف: 12-16; application/pdf

Relation: Journal of Crystal Growth; Volume 487; Lemettinen , J , Okumura , H , Kim , I , Kauppinen , C , Palacios , T & Suihkonen , S 2018 , ' MOVPE growth of N-polar AlN on 4H-SiC : Effect of substrate miscut on layer quality ' , Journal of Crystal Growth , vol. 487 , pp. 12-16 . https://doi.org/10.1016/j.jcrysgro.2018.02.013; PURE UUID: 0b194a43-2969-43bb-8ef4-4d2d9b736415; PURE ITEMURL: https://research.aalto.fi/en/publications/0b194a43-2969-43bb-8ef4-4d2d9b736415; PURE LINK: http://www.scopus.com/inward/record.url?scp=85041855564&partnerID=8YFLogxK; PURE LINK: https://arxiv.org/abs/1811.03528; PURE FILEURL: https://research.aalto.fi/files/29317130/ELEC_lemettinen_et_al_movpe_growth_JoCG.pdf; https://aaltodoc.aalto.fi/handle/123456789/34578; URN:NBN:fi:aalto-201811095619

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/34578
https://doi.org/10.1016/j.jcrysgro.2018.02.013

المؤلفون: Sukhorukov, Andrey, Kivshar, Yuri

المصدر: Proceedings of CLEO/QELS Conference, Baltimore, Maryland (2003)

مصطلحات موضوعية: Keywords: Computer simulation, Differential equations, Fiber Bragg gratings, Laser beams, Light absorption, Light interference, Light propagation, Light reflection, Nonlinear equations, Refractive index, Semiconducting aluminum compounds, Solitons, Binary waveguide

جغرافية الموضوع: Baltimore USA

Relation: Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2003); http://hdl.handle.net/1885/87651

الاتاحة: http://hdl.handle.net/1885/87651

المؤلفون: Deenapanray, Prakash, Krispin, M, Meyer, W E, Jagadish, Chennupati, Auret, Francois D, Tan, Hark Hoe

المصدر: Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications

مصطلحات موضوعية: Keywords: Crystal defects, Crystal impurities, Dislocations (crystals), Electron emission, Epitaxial growth, Semiconducting aluminum compounds, Semiconductor doping, Spectroscopy, Defect engineering, Disordered layers, Impurity-free disordering (IFD), Semiconductin

جغرافية الموضوع: Boston USA

Time: Boston USA

Relation: Materials Research Society Meeting 2003; http://hdl.handle.net/1885/86784

الاتاحة: http://hdl.handle.net/1885/86784

المؤلفون: Stewart Sears, Kalista, Buda, Manuela, Jagadish, Chennupati, Tan, Hark Hoe

المصدر: 2005 IEEE LEOS Annual Meeting Conference Proceedings

مصطلحات موضوعية: Keywords: Cladding (coating), Laser applications, Metallorganic chemical vapor deposition, Optical waveguides, Problem solving, Semiconductor quantum dots, Laser performance, Semiconducting aluminum compounds

جغرافية الموضوع: Sydney Australia

Relation: Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005); http://hdl.handle.net/1885/84358

الاتاحة: http://hdl.handle.net/1885/84358
https://doi.org/10.1109/LEOS.2005.1548306

المؤلفون: Barik, Satyanarayan, Jagadish, Chennupati, Tan, Hark Hoe

المصدر: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

مصطلحات موضوعية: Keywords: Chemical reactions, Chemical vapor deposition, Metallizing, Optical waveguides, Quantum electronics, Semiconducting aluminum compounds, Semiconducting gallium, Semiconducting indium, Semiconductor quantum dots, Vapors, (1 1 0) surface, blue shifting, Chem Atomic force microscopy, Metalorganic chemical vapor deposition, Photoluminescence, Quantum dots, Semiconducting III- V materials

جغرافية الموضوع: Brisbane Australia

Relation: Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004); http://hdl.handle.net/1885/53179

الاتاحة: http://hdl.handle.net/1885/53179
https://doi.org/10.1109/COMMAD.2004.1577558

المؤلفون: Sarkar, D., Van Der Meulen, H.P., Calleja, J.M., Becker, J.M., Haug, Rolf J., Pierz, Klaus

المصدر: Journal of Applied Physics 100 (2006), Nr. 2

مصطلحات موضوعية: Binding energy, Self assembly, Semiconducting aluminum compounds, Semiconducting indium compounds, Semiconductor quantum dots, Antibinding regime, Biexciton binding energy, Exciton fine structure, Excitons, ddc:530

Relation: http://dx.doi.org/10.15488/2840; http://www.repo.uni-hannover.de/handle/123456789/2866

الاتاحة: http://www.repo.uni-hannover.de/handle/123456789/2866
https://doi.org/10.15488/2840

المؤلفون: Könemann, J., Haug, Rolf J., Maude, D.K., Fal'Ko, V.I., Altshuler, B.L.

المصدر: Physical Review Letters 94 (2005), Nr. 22

مصطلحات موضوعية: Spin electrons, Spin splitting, Spin-orbit coupling, Anisotropy, Electron energy levels, Magnetic couplings, Magnetic fields, Resonant tunneling, Semiconducting aluminum compounds, Semiconductor quantum dots, ddc:530

Relation: http://dx.doi.org/10.15488/2892; http://www.repo.uni-hannover.de/handle/123456789/2918

الاتاحة: http://www.repo.uni-hannover.de/handle/123456789/2918
https://doi.org/10.15488/2892

المؤلفون: Iurii Kim, Tomas Palacios, Christoffer Kauppinen, Jori Lemettinen, Sami Suihkonen, Hironori Okumura

المساهمون: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories

المصدر: arXiv

مصطلحات موضوعية: Materials science, Analytical chemistry, FOS: Physical sciences, 02 engineering and technology, Substrate (electronics), Surface finish, Applied Physics (physics.app-ph), Epitaxy, A1. X-ray diffraction, 01 natural sciences, Inorganic Chemistry, Root mean square, B1. Nitrides, 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, ta216, B2. Semiconducting aluminum compounds, 010302 applied physics, ta114, A1. Polarity, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, A3. Metal-organic vapor phase epitaxy, Polar, 0210 nano-technology, Layer (electronics), Hillock

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28c6758a4b4839a9957a29b553f04f5d
http://juuli.fi/Record/0287476118

المؤلفون: Balandin, A., Nica, D.L., Nika, D.L., Ника, Д.Л., Pocatilov, E.P., Pokatilov, E.P., Покатилов, Е.П.

المصدر: Physica Status Solidi C: Conferences 2658-2661

مصطلحات موضوعية: Anisotropy, Approximation theory, Cladding (coating), phonons, Semiconducting aluminum compounds, Ultrathin films

وصف الملف: application/pdf

Relation: https://ibn.idsi.md/vizualizare_articol/185183; urn:issn:16101634

الاتاحة: https://ibn.idsi.md/vizualizare_articol/185183
https://doi.org/10.1002/pssc.200405418

المؤلفون: Schulze-Wischeler, F., Hohls, Frank, Zeitler, U., Reuter, D., Wieck, A.D., Haug, Rolf J.

المصدر: Physical Review Letters 93 (2004), Nr. 2

مصطلحات موضوعية: Electron mobility, Fermions, Ground state, Integral equations, Lattice constants, Magnetic fields, Ohmic contacts, Photoconductivity, Photoluminescence, Quantum theory, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Thermodynamics, Electron densities, Landau levels, Phonon excitations, Phonon gaps, Phonons, ddc:530

Relation: http://dx.doi.org/10.15488/2891; http://www.repo.uni-hannover.de/handle/123456789/2917

الاتاحة: http://www.repo.uni-hannover.de/handle/123456789/2917
https://doi.org/10.15488/2891

المؤلفون: Kamata, N., Klausing, H., Fedler, F., Mistele, D., Aderhold, J., Semchinova, O.K., Graul, J., Someya, T., Arakawa, Y.

المصدر: EPJ Applied Physics 27 (2004)

مصطلحات موضوعية: Gallium nitride, Impurities, Light emitting diodes, Luminescence, Metallorganic chemical vapor deposition, Modulation, Molecular beam epitaxy, Optimization, Photons, Quantum efficiency, Semiconducting aluminum compounds, Semiconductor doping, Strain, Stress relaxation, Above-gap excitation (AGE), Below-gap excitation (BGE), III-V semiconductors, Photon energies, Semiconductor quantum wells, ddc:530

Relation: http://dx.doi.org/10.15488/2675; http://www.repo.uni-hannover.de/handle/123456789/2701

الاتاحة: http://www.repo.uni-hannover.de/handle/123456789/2701
https://doi.org/10.15488/2675

المؤلفون: Hohls, Frank, Zeitler, U., Haug, Rolf J., Meisels, R., Dybko, K., Kuchar, F.

المصدر: Physical Review Letters 89 (2002), Nr. 27

مصطلحات موضوعية: Carrier concentration, Hall effect, Heterojunctions, Quantum theory, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Waveguides, Dynamical scaling, Phase transitions, ddc:530

Relation: http://dx.doi.org/10.15488/2887; http://www.repo.uni-hannover.de/handle/123456789/2913

الاتاحة: http://www.repo.uni-hannover.de/handle/123456789/2913
https://doi.org/10.15488/2887

المؤلفون: Suruceanu, G.I., Caliman, A.N., Vieru, S.F., Iakovlev, V.P., Sîrbu, A.V., Syrbu, A., Mereuţă, A.Z., Mereutza, A.Z., Мереуцэ, А.

المصدر: Proceedings of SPIE - The International Society for Optical Engineering (Ediția 6, Vol.4068)

مصطلحات موضوعية: Engineering controlled terms Continuous wave lasers, deposition, Laser damage, Mirrors, Passivation, Semiconducting aluminum compounds, Semiconducting indium gallium arsenide, Semiconductor junctions, Vacuum technology Engineering uncontrolled terms Catastrophic optical damage Engineering main heading Semiconductor lasers

وصف الملف: application/pdf

Relation: info:eu-repo/grantAgreement/EC/FP7/17840/EU/1NCO Copernicus Programme: "Novel optical devices and measurement techniques; technology transfer and training" (grant)/1C15-CT96-0820 (DG12-MUYS); https://ibn.idsi.md/vizualizare_articol/196663

الاتاحة: https://ibn.idsi.md/vizualizare_articol/196663
https://doi.org/10.1117/12.378687

المؤلفون: Suruceanu, G.I.

المصدر: Proceedings of SPIE - The International Society for Optical Engineering (Ediția 6, Vol.4068)

مصطلحات موضوعية: Engineering controlled terms Continuous wave lasers, Emission spectroscopy, Heterojunctions, Laser tuning, Microprocessor chips, Semiconducting aluminum compounds, Semiconducting indium gallium arsenide, Semiconductor quantum wells Engineering uncontrolled terms Cleaved coupled cavity laser diodes, Single quantum wells (SQW) Engineering main heading Semiconductor lasers

وصف الملف: application/pdf

Relation: info:eu-repo/grantAgreement/EC/FP7/17840/EU/1NCO Copernicus Programme: "Novel optical devices and measurement techniques; technology transfer and training" (grant)/1C15-CT96-0820 (DG12-MUYS); info:eu-repo/grantAgreement/EC/FP7/17841/EU/Moldavian Government Research Programme ( Grant )/108 BS; https://ibn.idsi.md/vizualizare_articol/196660

الاتاحة: https://ibn.idsi.md/vizualizare_articol/196660
https://doi.org/10.1117/12.378688

المؤلفون: Ichizli, V.M., Vogt, A., Sigurdardottir, A., Tighineanu, I.M., Tiginyanu, I.M., Тигиняну, И.М., Hartnagel, H.

المصدر: Semiconductor Science and Technology 143-147

مصطلحات موضوعية: Band structure, Molecular beam epitaxy, morphology, Scanning tunneling microscopy, Semiconducting aluminum compounds, Semiconducting indium compounds, Semiconductor growth, Surface topography

وصف الملف: application/pdf

Relation: https://ibn.idsi.md/vizualizare_articol/186456; urn:issn:02681242

الاتاحة: https://ibn.idsi.md/vizualizare_articol/186456
https://doi.org/10.1088/0268-1242/14/2/007

المؤلفون: Nazarov, M.V., Nazarov, M., Nazarova, T.A., Simaşchevici, A.V., Simashkevich, A.V., Симашкевич, А.В., Sobolevscaia, R.L., Sobolevskaya, R.L., Suşchevici, C.D., Sushkevich, K.D., Сушкевич, К., Corotcov, V.A., Korotkov, V.A., Bruk, L.I., Petrov, V.I., Petrov, A.

المصدر: Proceedings of the International Semiconductor Conference (Vol. 2)

مصطلحات موضوعية: Annealing, Bismuth, cathodoluminescence, Emission spectroscopy, Liquid metals, Semiconducting aluminum compounds, Semiconducting zinc compounds, Zinc sulfide

وصف الملف: application/pdf

Relation: https://ibn.idsi.md/vizualizare_articol/191838

الاتاحة: https://ibn.idsi.md/vizualizare_articol/191838
https://doi.org/10.1109/SMICND.1998.733808

المؤلفون: Marsillac, S., Benchouk, K., Moctar, C. El, Bernède, J. C., Pouzet, J., Khellil, A, Jamali, M.

المصدر: Electrical & Computer Engineering Faculty Publications

مصطلحات موضوعية: Semiconducting films, Annealing, Crystal orientation, Deposition, Diffusion in solids, Etching, Evaporation, Morphology, Semiconducting aluminum compounds, Surface roughness, Synthesis, Chemical, Thin films, Vacuum applications, Electrical and Computer Engineering, Electronic Devices and Semiconductor Manufacturing, Semiconductor and Optical Materials

وصف الملف: application/pdf

Relation: https://digitalcommons.odu.edu/ece_fac_pubs/211; https://digitalcommons.odu.edu/context/ece_fac_pubs/article/1216/viewcontent/Marsillac_1997_CuAlSe2ThinFilmsObtainedbyChalcOCR.pdf

الاتاحة: https://digitalcommons.odu.edu/ece_fac_pubs/211
https://doi.org/10.1051/jp3:1997249
https://digitalcommons.odu.edu/context/ece_fac_pubs/article/1216/viewcontent/Marsillac_1997_CuAlSe2ThinFilmsObtainedbyChalcOCR.pdf