المؤلفون: Johansson, Jonas, Leshchenko, Egor D.

المصدر: Journal of Crystal Growth NanoLund: Centre for Nanoscience. 509:118-123

مصطلحات موضوعية: A1. Crystal structure, A1. Nanostructures, A1. Nucleation, B2. Semiconducting III-V materials, B2. Semiconducting ternary compounds, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics, Teknik, Nanoteknik, Engineering and Technology, Nano Technology

URL الوصول: https://lup.lub.lu.se/record/83f02277-bf71-48e2-8e0c-c0258e2371dc
http://dx.doi.org/10.1016/j.jcrysgro.2019.01.002

المؤلفون: Padavala, Balabalaji, Al Atabi, H., Tengdelius, Lina, Lu, Jun, Högberg, Hans, Edgar, J. H.

المصدر: Journal of Crystal Growth. 483:115-120

مصطلحات موضوعية: Crystal morphology, Defects, Substrates, Chemical vapor deposition processes, Semiconducting III-V materials

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-144241
https://liu.diva-portal.org/smash/get/diva2:1173648/FULLTEXT01.pdf

المؤلفون: Brugnolotto, Scherrer, Schmid, Georgiev, Sousa

مصطلحات موضوعية: A1. Characterization, A1. Nanostructures, A3. Metalorganic chemical vapor deposition, A3. Quantum Wells, A3. Selective epitaxy, B2. Semiconducting III-V materials

Relation: https://doi.org/10.1016/j.jcrysgro.2022.127015; oai:zenodo.org:8092319

الاتاحة: https://doi.org/10.1016/j.jcrysgro.2022.127015

المؤلفون: Heikkinen, T., Pavlov, J., Ceponis, T., Gaubas, E., Zajac, M., Tuomisto, F.

المساهمون: Department of Physics, Helsinki Institute of Physics

مصطلحات موضوعية: Point defects, Doping, Hydrothermal growth, Nitrides, Semiconducting III-V materials, NA-FLUX METHOD, HIGH-PRESSURE, GROWTH, Physical sciences

وصف الملف: application/pdf

Relation: This work was partially funded by Academy of Finland (Project Nr 315082).; Heikkinen , T , Pavlov , J , Ceponis , T , Gaubas , E , Zajac , M & Tuomisto , F 2020 , ' Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN ' , Journal of Crystal Growth , vol. 547 , 125803 . https://doi.org/10.1016/j.jcrysgro.2020.125803; ORCID: /0000-0002-6913-5654/work/80948160; http://hdl.handle.net/10138/346137; 65bf1a80-4def-469f-ab02-3f9f7c2854e4; 000566907700004

الاتاحة: http://hdl.handle.net/10138/346137

المؤلفون: Tuktamyshev, A, Vichi, S, Cesura, F, Fedorov, A, Bietti, S, Chrastina, D, Tsukamoto, S, Sanguinetti, S

المساهمون: Tuktamyshev, A, Vichi, S, Cesura, F, Fedorov, A, Bietti, S, Chrastina, D, Tsukamoto, S, Sanguinetti, S

مصطلحات موضوعية: Crystal morphology, Single crystal growth, Molecular beam epitaxy, Semiconducting III-V materials, Infrared devices

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000888049100001; volume:600; firstpage:1; lastpage:6; numberofpages:6; journal:JOURNAL OF CRYSTAL GROWTH; https://hdl.handle.net/11311/1227518; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85139828021; https://www.sciencedirect.com/science/article/pii/S0022024822003888

الاتاحة: https://hdl.handle.net/11311/1227518
https://doi.org/10.1016/j.jcrysgro.2022.126906
https://www.sciencedirect.com/science/article/pii/S0022024822003888

المؤلفون: Wenyu Yang, Zhengxia Yang, Mengqi Wang, Hongyan Yu, Yejin Zhang, Wei Wang, Xuliang Zhou, Jiaoqing Pan

المصدر: Crystals; Volume 12; Issue 4; Pages: 476

مصطلحات موضوعية: high-resolution X-ray diffraction, growth models, metal-organic chemical vapor deposition, nanomaterials, semiconducting III–V materials, semiconducting silicon

وصف الملف: application/pdf

Relation: Inorganic Crystalline Materials; https://dx.doi.org/10.3390/cryst12040476

الاتاحة: https://doi.org/10.3390/cryst12040476

المساهمون: Wang, George [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)]

المصدر: Journal of Crystal Growth; 427; C

وصف الملف: Medium: ED; Size: p. 67-71

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1236245

المساهمون: Veal, T. [Univ. of Liverpool, Liverpool (United Kingdom). Stephenson Inst. for Renewable Energy and Dept. of Physics.] (ORCID:0000000206105626)

المصدر: Journal of Crystal Growth; 425; C

وصف الملف: Medium: ED; Size: p. 241-244

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1208644

المساهمون: Kim, J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)]

المصدر: Journal of Crystal Growth; 425

وصف الملف: Medium: ED; Size: p. 110-114

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1340250

المؤلفون: Haggren, Tuomas, Otnes, Gaute, Mourão, Renato, Dagyte, Vilgaile, Hultin, Olof, Lindelöw, Fredrik, Borgström, Magnus, Samuelson, Lars

المصدر: Journal of Crystal Growth NanoLund: Centre for Nanoscience. 451:18-26

مصطلحات موضوعية: A1. Annealing, A1. Diffusion, A1. Doping, A3. Metalorganic vapor phase epitaxy, B2. Semiconducting III–V materials, B3. Field effect transistors, Teknik, Nanoteknik, Engineering and Technology, Nano Technology, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics

وصف الملف: electronic

URL الوصول: https://lup.lub.lu.se/record/9a1f7783-26dd-4f93-9730-67a195f7af7c
https://portal.research.lu.se/files/24360504/Preprint_author_manuscript_InP_NW_diffusion_doping_v03.pdf
http://dx.doi.org/10.1016/j.jcrysgro.2016.06.020

المؤلفون: Levchenko, Elena V., Nebol'sin, Valery A., Yuryev, Vladimir A., Swaikat, Nada

المساهمون: The University of Newcastle. College of Engineering, Science & Environment, School of Information and Physical Sciences

مصطلحات موضوعية: growth models, nanostructures, nanowires, semiconducting III-V materials, semiconducting materials, semiconducting silicon

Relation: Physica Status Solidi (B) Vol. 261, Issue 1; http://hdl.handle.net/1959.13/1505883; uon:55765

الاتاحة: http://hdl.handle.net/1959.13/1505883

المؤلفون: Strömberg, Axel, Omanakuttan, Giriprasanth, Liu, Yingjun, Mu, Tangjie, Xu, Zhehan, Lourdudoss, Sebastian, 1953, Sun, Yan-Ting

المصدر: Journal of Crystal Growth. 540

مصطلحات موضوعية: Line defects, Hydride vapor phase epitaxy, Semiconducting III-V materials, Nonlinear optic materials, Heterojunction semiconductor devices, Solar cells

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-273874
https://doi.org/10.1016/j.jcrysgro.2020.125623

المؤلفون: Nemoz, M., Semond, F., Rennesson, S., Leroux, M., Bouchoule, S., Patriarche, G., Zuniga-Perez, J.

المساهمون: Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA), ANR-16-CE24-0021,Plug-and-Bose,Laser à polaritons injecté electriquement à ultra-faible seuil(2016)

المصدر: ISSN: 0749-6036.

مصطلحات موضوعية: B1. Nitrides, B2. Semiconducting III-V materials, A3. Molecular beam epitaxy, A1. Diffusion, A1. High resolution X-ray diffraction, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

الاتاحة: https://hal.science/hal-03357724
https://hal.science/hal-03357724v1/document
https://hal.science/hal-03357724v1/file/ForHal_SuperlatticesMicrostructure.pdf
https://doi.org/10.1016/j.spmi.2020.106801

المؤلفون: Seemayer, Andreas, Hommes, Alexander, Hümann, Sascha, Wandelt, Klaus, Schulz, Stephan

مصطلحات موضوعية: ddc:540, Fakultät für Chemie » Anorganische Chemie, A1. Surfaces A3. Low press. metalorganic vapor-phase epitaxy B1. Antimonides B2. Semiconducting III–V materials

Relation: https://doi.org/10.1016/j.jcrysgro.2008.07.114; https://nbn-resolving.org/urn:nbn:de:hbz:464-20201027-082457-6; https://duepublico2.uni-due.de/receive/duepublico_mods_00073139; https://duepublico2.uni-due.de/servlets/MCRFileNodeServlet/duepublico_derivate_00072949/Accepted_Manuscript_JCrystGrowth_2008_310_4831.pdf

الاتاحة: https://doi.org/10.1016/j.jcrysgro.2008.07.114
https://nbn-resolving.org/urn:nbn:de:hbz:464-20201027-082457-6
https://duepublico2.uni-due.de/receive/duepublico_mods_00073139
https://duepublico2.uni-due.de/servlets/MCRFileNodeServlet/duepublico_derivate_00072949/Accepted_Manuscript_JCrystGrowth_2008_310_4831.pdf

المؤلفون: Kouichi Akahane, Atsushi Matsumoto, Toshimasa Umezawa, Naokatsu Yamamoto

المصدر: Crystals; Volume 10; Issue 2; Pages: 90

مصطلحات موضوعية: nanostructures, diffusion, desorption, atomic force microscopy, molecular beam epitaxy, semiconducting III-V materials

وصف الملف: application/pdf

Relation: Inorganic Crystalline Materials; https://dx.doi.org/10.3390/cryst10020090

الاتاحة: https://doi.org/10.3390/cryst10020090

المؤلفون: Heikkinen, T., Pavlov, J., Ceponis, T., Gaubas, E., Zając, M., Tuomisto, F.

المساهمون: Department of Applied Physics, Vilnius University, Polish Academy of Sciences, Antimatter and Nuclear Engineering, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: A1. Doping, A1. Point defects, A2. Hydrothermal growth, B1. Nitrides, B2. Semiconducting III-V materials

Relation: Journal of Crystal Growth; Volume 547; Heikkinen , T , Pavlov , J , Ceponis , T , Gaubas , E , Zając , M & Tuomisto , F 2020 , ' Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN ' , Journal of Crystal Growth , vol. 547 , 125803 . https://doi.org/10.1016/j.jcrysgro.2020.125803; PURE UUID: 71e16705-8c20-44ba-aafb-f33ab9863b36; PURE ITEMURL: https://research.aalto.fi/en/publications/71e16705-8c20-44ba-aafb-f33ab9863b36; PURE LINK: http://www.scopus.com/inward/record.url?scp=85087746550&partnerID=8YFLogxK; PURE LINK: https://researchportal.helsinki.fi/fi/publications/65bf1a80-4def-469f-ab02-3f9f7c2854e4; https://aaltodoc.aalto.fi/handle/123456789/103426; URN:NBN:fi:aalto-202103312699

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/103426
https://doi.org/10.1016/j.jcrysgro.2020.125803

المؤلفون: Cerba, T., Hauchecorne, P., Martin, M., Moeyaert, J., Alcotte, R., Salem, B., Eustache, E., Bézard, P., Chevalier, X., Lombard, G., Bassani, F., David, S., Beainy, G., Tournié, E., Patriarche, G., Boutry, H., Bawedin, M., Baron, T.

المساهمون: Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Arkema (ARKEMA), Arkema (Arkema), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies Orsay (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), ANR-15-IDEX-0002,UGA,IDEX UGA(2015)

المصدر: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-02055424 ; Journal of Crystal Growth, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩.

مصطلحات موضوعية: Organometallic vapor phase epitaxy, Semiconducting III–V materials, High electron mobility transistors, Field effect transistors, Etching, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal.science/hal-02055424
https://hal.science/hal-02055424v1/document
https://hal.science/hal-02055424v1/file/S0022024818306274.pdf
https://doi.org/10.1016/j.jcrysgro.2018.12.014

المؤلفون: Lu, Xiangmeng, Ota, Hiroto, Kumagai, Naoto, Minami, Yasuo, Kitada, Takahiro, Isu, Toshiro

مصطلحات موضوعية: B3. Two-color surface-emitting laser, A3. Coupled cavity, B2. Semiconducting III-V materials, B3. Coherent terahertz source

Relation: http://repo.lib.tokushima-u.ac.jp/files/public/11/113924/20191114161359388295/crysgro_477_249.pdf; AA00696341; AA11531784; http://repo.lib.tokushima-u.ac.jp/113924

الاتاحة: http://repo.lib.tokushima-u.ac.jp/113924

المؤلفون: Li, K, Liu, Z, Tang, M, Liao, M, Kim, D, Deng, H, Sanchez, AM, Beanland, R, Martin, M, Baron, T, Chen, S, Wu, J, Seeds, A, Liu, H

المصدر: Journal of Crystal Growth , 511 pp. 56-60. (2019) (In press).

مصطلحات موضوعية: A1. Low dimensional structures, A3. Molecular beam epitaxy, B2. Semiconducting III-V materials, B3. Laser Diodes

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/10068348/1/1-s2.0-S002202481930034X-main.pdf; https://discovery.ucl.ac.uk/id/eprint/10068348/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10068348/1/1-s2.0-S002202481930034X-main.pdf
https://discovery.ucl.ac.uk/id/eprint/10068348/

المؤلفون: Ohkawa, Kazuhiro, Nakamura, Kenichi, Hirako, Akira, Iida, Daisuke

المساهمون: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, Electrical Engineering Program, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan

مصطلحات موضوعية: A1. Computer simulation, A1. Growth models, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting III-V materials, B3. Light emitting diodes

وصف الملف: application/pdf

Relation: https://www.sciencedirect.com/science/article/pii/S0022024819301915; Ohkawa K, Nakamura K, Hirako A, Iida D (2019) Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN. Journal of Crystal Growth 516: 17–20. Available: http://dx.doi.org/10.1016/j.jcrysgro.2019.03.023.; Journal of Crystal Growth; http://hdl.handle.net/10754/631852

الاتاحة: http://hdl.handle.net/10754/631852
https://doi.org/10.1016/j.jcrysgro.2019.03.023