المؤلفون: Brendan Mirka (6583385), Nicole A. Rice (1954375), Phillip Williams (6867422), Mathieu N. Tousignant (10574417), Nicholas T. Boileau (7313195), William J. Bodnaryk (10574420), Darryl Fong (4492021), Alex Adronov (1532860), Benoît H. Lessard (1639324)

مصطلحات موضوعية: Biophysics, Biochemistry, Microbiology, Pharmacology, Biotechnology, Immunology, Cancer, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, XPS, Single-Walled Carbon Nanotube Thin-., AFM, random-network semiconductor films, polymer-sorted SWNT dispersions, semiconductor film fabrication, Unnecessary Ultrapure semiconductin., threshold polymer concentration, TFT fabrication, x-ray photoelectron spectroscopy, 1200 TFT devices, Conventional wisdom dictates, open-source Machine Learning algorithm

Relation: https://figshare.com/articles/journal_contribution/Excess_Polymer_in_Single-Walled_Carbon_Nanotube_Thin-Film_Transistors_Its_Removal_Prior_to_Fabrication_Is_Unnecessary/14390789

الاتاحة: https://doi.org/10.1021/acsnano.0c08584.s001

المؤلفون: Deenapanray, Prakash, Krispin, M, Meyer, W E, Jagadish, Chennupati, Auret, Francois D, Tan, Hark Hoe

المصدر: Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications

مصطلحات موضوعية: Keywords: Crystal defects, Crystal impurities, Dislocations (crystals), Electron emission, Epitaxial growth, Semiconducting aluminum compounds, Semiconductor doping, Spectroscopy, Defect engineering, Disordered layers, Impurity-free disordering (IFD), Semiconductin

جغرافية الموضوع: Boston USA

Time: Boston USA

Relation: Materials Research Society Meeting 2003; http://hdl.handle.net/1885/86784

الاتاحة: http://hdl.handle.net/1885/86784

المؤلفون: Deenapanray, Prakash, Krispin, M, Meyer, W E, Jagadish, Chennupati, Auret, Francois D, Tan, Hark Hoe

المصدر: Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications

مصطلحات الفهرس: Keywords: Crystal defects; Crystal impurities; Dislocations (crystals); Electron emission; Epitaxial growth; Semiconducting aluminum compounds; Semiconductor doping; Spectroscopy; Defect engineering; Disordered layers; Impurity-free disordering (IFD); Semiconductin, Conference paper

URL: http://hdl.handle.net/1885/86784
Materials Research Society Meeting 2003