المؤلفون: Wang, G., Luo, J., Qin, C., Cui, H., Liu, J., Jia, K., Li, J., Yang, T., Yin, H., Zhao, C., Ye, T., Yang, P., Jayakumar, Ganesh, Radamson, Henry H.

المصدر: ECS Transactions. :273-279

مصطلحات موضوعية: Characterization, Epitaxial growth, Germanium, MOSFET devices, Channel region, Characterization tools, Process integration, Selective epitaxial growth, Selective epitaxy, Selectively epitaxy, Strain-relaxed buffer layers, Void defects, Silicon alloys

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-201973

المؤلفون: Cheng, M.H., Ni, Wei-Xin, Luo, G.L., Huang, S.C., Chang, J.J., Lee, C.Y.

المصدر: Thin Solid Films. 517(1):57-61

مصطلحات موضوعية: Self-assembly Ge nanostructures, Selectively epitaxy, Oxide-patterned substrate, Planar unpatterned substrate, Chemical vapor deposition, Strain degree, Electron beam lithography, TECHNOLOGY, TEKNIKVETENSKAP

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-59151