المؤلفون: Junha Suk, Yohan Kim, Jungho Do, Garoom Kim, Woojin Rim, Sanghoon Baek, Seiseung Yoon, Soyoung Kim

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 898-904 (2024)

مصطلحات موضوعية: Nanosheet field-effect transistors (NSFETs), compact model, gate resistance, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10699326/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/b169c32d94e548189b05ab22127e4800