المؤلفون: Illarionov, Yu. Yu., Karl, A., Smets, Q., Kaczer, B., Knobloch, T., Panarella, L., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T.

المصدر: npj 2D Materials and Applications ; volume 8, issue 1 ; ISSN 2397-7132

الاتاحة: http://dx.doi.org/10.1038/s41699-024-00445-0
https://www.nature.com/articles/s41699-024-00445-0.pdf
https://www.nature.com/articles/s41699-024-00445-0

المؤلفون: Ghosh, S., Kruv, A., Smets, Q., Schram, T., Leech, D. J., Ding, T., Turkani, V., Groven, B., Dangel, A., Probst, G., Uhrmann, T., Wimplinger, M., Asselberghs, I., Lockhart de la Rosa, C. J., Brems, S., Kar, G. S.

المصدر: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ; page 1-2

الاتاحة: http://dx.doi.org/10.1109/vlsitechnologyandcir46783.2024.10631364
http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631364.pdf?arnumber=10631364

المؤلفون: Dorow, C. J., Schram, T., Smets, Q., O’Brien, K. P., Maxey, K., Lin, C.-C., Panarella, L., Kaczer, B., Arefin, N., Roy, A., Jordan, R., Oni, A., Penumatcha, A., Naylor, C. H., Kavrik, M., Cott, D., Graven, B., Afanasiev, V., Morin, P., Asselberghs, I., Lockhart de La Rosa, C. J., Sankar Kar, G., Metz, M., Avci, U.

المصدر: 2023 International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm45741.2023.10413874
http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413874.pdf?arnumber=10413874

المؤلفون: Ghosh, S., Smets, Q., Banerjee, S., Schram, T., Kennes, K., Verheyen, R., Kumar, P., Boulon, M.-E., Groven, B., Silva, H. M., Kundu, S., Cott, D., Lin, D., Favia, P., Nuytten, T., Phommahaxay, A., Asselberghs, I., De La Rosa, C., Kar, G. S., Brems, S.

المساهمون: Graphene Flagship

المصدر: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

الاتاحة: http://dx.doi.org/10.23919/vlsitechnologyandcir57934.2023.10185215
http://xplorestaging.ieee.org/ielx7/10185199/10185158/10185215.pdf?arnumber=10185215

المؤلفون: Panarella, L., Kaczer, B., Smets, Q., Verreck, D., Schram, T., Cott, D., Lin, D., Tyaginov, S., Asselberghs, I., de la Rosa, C. Lockhart, Kar, G. S., Afanas'ev, V.

المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps48203.2023.10117803
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117803.pdf?arnumber=10117803

المؤلفون: Kundu, S., van Dorp, D. H., Schram, T., Smets, Q., Banerjee, S., Groven, B., Cott, D., Decoster, S., Bezard, P., Lazzarino, F., Banerjee, K., Ghosh, S., de Marneffe, J. F., Morin, P., de La Rosa, C. J. L., Asselberghs, I., Kar, G. S.

المساهمون: Graphene Flagship

المصدر: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

الاتاحة: http://dx.doi.org/10.23919/vlsitechnologyandcir57934.2023.10185413
http://xplorestaging.ieee.org/ielx7/10185199/10185158/10185413.pdf?arnumber=10185413

المؤلفون: Boudier, D., Cretu, B., Simoen, E., Hellings, G., Schram, T., Mertens, H., Linten, D.

المصدر: Solid-State Electronics ; volume 168, page 107732 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2019.107732
https://api.elsevier.com/content/article/PII:S003811011930735X?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S003811011930735X?httpAccept=text/plain

المؤلفون: Illarionov, Yu. Yu., Karl, A., Smets, Q., Kaczer, B., Knobloch, T., Panarella, L., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T.

المصدر: NPJ 2D Materials & Applications; 2/2/2024, Vol. 8, p1-7, 7p

مصطلحات موضوعية: FIELD-effect transistors, TECHNOLOGICAL innovations, HIGH temperatures, SEMICONDUCTORS, ORGANIC field-effect transistors, HYSTERESIS

المؤلفون: Claeys, C, Ritzenthaler, R, Schram, T, Arimura, H, Horiguchi, N, Simoen, Eddy

المصدر: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY ; ISSN: 2162-8769

مصطلحات موضوعية: Physics and Astronomy, DEVICE PERFORMANCE, IMPACT, METAL, RELIABILITY, MOSFETS, STATES

وصف الملف: application/pdf

Relation: https://biblio.ugent.be/publication/8619877; http://hdl.handle.net/1854/LU-8619877; http://dx.doi.org/10.1149/2.0221902jss; https://biblio.ugent.be/publication/8619877/file/8619882

الاتاحة: https://biblio.ugent.be/publication/8619877
http://hdl.handle.net/1854/LU-8619877
https://doi.org/10.1149/2.0221902jss
https://biblio.ugent.be/publication/8619877/file/8619882

المؤلفون: Panarella, L., Smets, Q., Verreck, D., Schram, T., Cott, D., Asselberghs, I., Kaczer, B.

المصدر: 2022 Device Research Conference (DRC) ; volume 7, page 1-2

الاتاحة: http://dx.doi.org/10.1109/drc55272.2022.9855819
http://xplorestaging.ieee.org/ielx7/9855770/9855647/09855819.pdf?arnumber=9855819

المؤلفون: Veloso, A., Jourdain, A., Radisic, D., Chen, R., Arutchelvan, G., O'Sullivan, B., Arimura, H., Stucchi, M., Keersgieter, A. De, Hosseini, M., Hopf, T., D'Have, K., Wang, S., Dupuy, E., Mannaert, G., Vandersmissen, K., Iacovo, S., Marien, P., Choudhury, S., Schleicher, F., Sebaai, F., Oniki, Y., Zhou, X., Gupta, A., Schram, T., Briggs, B., Lorant, C., Rosseel, E., Hikavyy, A., Loo, R., Geypen, J., Batuk, D., Martinez, G. T., Soulie, J. P., Devriendt, K., Chan, B. T., Demuynck, S., Hiblot, G., der Plas, G. Van, Ryckaert, J., Beyer, G., Litta, E. Dentoni, Beyne, E., Horiguchi, N.

المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

الاتاحة: http://dx.doi.org/10.1109/vlsitechnologyandcir46769.2022.9830177
http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830177.pdf?arnumber=9830177

المؤلفون: Mertens, H., Ritzenthaler, R., Hikavyy, A., Kim, M. S., Tao, Z., Wostyn, K., Chew, S. A., De Keersgieter, A., Mannaert, G., Rosseel, E., Schram, T., Devriendt, K., Tsvetanova, D., Dekkers, H., Demuynck, S., Chasin, A., Van Besien, E., Dangol, A., Godny, S., Douhard, B., Bosman, N., Richard, O., Geypen, J., Bender, H., Barla, K., Mocuta, D., Horiguchi, N., Thean, A.V-Y

المصدر: 2016 IEEE Symposium on VLSI Technology ; page 1-2

الاتاحة: https://doi.org/10.1109/vlsit.2016.7573416
http://xplorestaging.ieee.org/ielx7/7569798/7573353/07573416.pdf?arnumber=7573416

المؤلفون: Dekkers, H. F. W., Ragnarsson, L.-Å., Schram, T., Horiguchi, N.

المصدر: Journal of Applied Physics; 2018, Vol. 124 Issue 16, pN.PAG-N.PAG, 13p, 1 Diagram, 1 Chart, 13 Graphs

مصطلحات موضوعية: ATOMIC layer deposition, METALLIC thin films, ALUMINUM, METAL oxide semiconductor field-effect transistors, POLYCRYSTALS

المؤلفون: Ahmed, Z., Afzalian, A., Schram, T., Jang, D., Verreck, D., Smets, Q., Schuddinck, P., Chehab, B., Sutar, S., Arutchelvan, G., Soussou, A., Asselberghs, I., Spessot, A., Radu, I. P., Parvais, B., Ryckaert, J., Na, M. H.

المصدر: 2020 IEEE International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm13553.2020.9371906
http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371906.pdf?arnumber=9371906

المؤلفون: Asselberghs, I., Smets, Q., Schram, T., Groven, B., Verreck, D., Afzalian, A., Arutchelvan, G., Gaur, A., Cott, D., Maurice, T., Brems, S., Kennes, K., Phommahaxay, A., Dupuy, E., Radisic, D., de Marneffe, J-F, Thiam, A., Li, W., Devriendt, K., Huyghebaert, C., Lin, D., Caymax, M., Morin, P., Radu, I.P.

المصدر: 2020 IEEE International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm13553.2020.9371926
http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371926.pdf?arnumber=9371926

المؤلفون: Asselberghs, I., Schram, T., Smets, Q., Groven, B., Brems, S., Phommahaxay, A., Cott, D., Dupuy, E., Radisic, D., Marneffe, J-F de, Thiam, A., Li, W., Devriendt, K., Gaur, A., Maurice, T., Lin, D., Morin, P., Radu, I.P.

المصدر: 2020 IEEE Silicon Nanoelectronics Workshop (SNW)

الاتاحة: http://dx.doi.org/10.1109/snw50361.2020.9131651
http://xplorestaging.ieee.org/ielx7/9129833/9131605/09131651.pdf?arnumber=9131651

المؤلفون: Jiao, K, Sun, H, Li, X, Wu, H, Krivitzky, E, Schram, T, Larosiliere, L M

المصدر: Proceedings of the Institution of Mechanical Engineers, Part D: Journal of Automobile Engineering ; volume 223, issue 8, page 1061-1070 ; ISSN 0954-4070 2041-2991

الاتاحة: https://doi.org/10.1243/09544070jauto1202
https://journals.sagepub.com/doi/pdf/10.1243/09544070JAUTO1202

المؤلفون: Adelmann, C., Meersschaut, J., Ragnarsson, L.-Å., Conard, T., Franquet, A., Sengoku, N., Okuno, Y., Favia, P., Bender, H., Zhao, C., O’Sullivan, B. J., Rothschild, A., Schram, T., Kittl, J. A., Van Elshocht, S., De Gendt, S., Lehnen, P., Boissière, O., Lohe, C.

المصدر: Journal of Applied Physics ; volume 105, issue 5 ; ISSN 0021-8979 1089-7550

الاتاحة: https://doi.org/10.1063/1.3078107
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3078107/15030670/053516_1_online.pdf

المؤلفون: Cretu, B, Boudier, Dimitri, Simoen, Eddy, Hellings, Geert, Schram, T., Mertens, H., Linten, Dimitri

المساهمون: Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), IMEC (IMEC), Catholic University of Leuven = Katholieke Universiteit Leuven (KU Leuven)

المصدر: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ; https://hal.science/hal-02438777 ; Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2019, Grenoble, France

مصطلحات موضوعية: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Grenoble, France

Relation: hal-02438777; https://hal.science/hal-02438777

الاتاحة: https://hal.science/hal-02438777

المؤلفون: Boudier, D., Cretu, B, Simoen, E., Hellings, G., Schram, T., Mertens, H., Linten, D.

المساهمون: Equipe Electronique - Laboratoire GREYC - UMR6072, Groupe de Recherche en Informatique, Image et Instrumentation de Caen (GREYC), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS), IMEC (IMEC), Catholic University of Leuven = Katholieke Universiteit Leuven (KU Leuven)

المصدر: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
https://hal.science/hal-02935054
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2019, Grenoble, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS45800.2019.9041918⟩

مصطلحات موضوعية: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Grenoble, France

Relation: hal-02935054; https://hal.science/hal-02935054

الاتاحة: https://hal.science/hal-02935054
https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041918