المؤلفون: Cristoloveanu, S., Mohaghegh, A., de Pontcharra, J.

المصدر: ISSN: 0302-072X ; Journal de Physique Lettres ; https://hal.science/jpa-00231768 ; Journal de Physique Lettres, 1980, 41 (9), pp.235-237. ⟨10.1051/jphyslet:01980004109023500⟩.

مصطلحات موضوعية: double injecting p sup, nn sup, structures, carrier density, electric sensing devices, elemental semiconductors, magnetic variables measurement, Schottky barrier diodes, semiconductor doping, silicon, integrated magnetic sensor, silicon on sapphire Schottky magnetodiode, Schottky magnetodiode, magnetodiode effect, carrier density modulation, Schottky reverse current, magnetosensitivities, 10 V T, geometrical parameters, injection rate, doping level, device sensitivity, [PHYS.HIST]Physics [physics]/Physics archives

Relation: jpa-00231768; https://hal.science/jpa-00231768; https://hal.science/jpa-00231768/document; https://hal.science/jpa-00231768/file/ajp-jphyslet_1980_41_9_235_0.pdf

الاتاحة: https://hal.science/jpa-00231768
https://hal.science/jpa-00231768/document
https://hal.science/jpa-00231768/file/ajp-jphyslet_1980_41_9_235_0.pdf
https://doi.org/10.1051/jphyslet:01980004109023500