المؤلفون: Muhammad Ismail, Maria Rasheed, Chandreswar Mahata, Myounggon Kang, Sungjun Kim

المصدر: Nano Convergence, Vol 10, Iss 1, Pp 1-15 (2023)

مصطلحات موضوعية: a-HfSiOx film, Analog tunable switching, Excitatory postsynaptic current, Spiking-rate-dependent plasticity, Schottky emission, Technology, Chemical technology, TP1-1185, Biotechnology, TP248.13-248.65, Science, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-5404

URL الوصول: https://doaj.org/article/5c1a18c6a0ef48578ffcd1ae1ff54432

المؤلفون: Chuangye Yao, Dinghua Bao

مصطلحات موضوعية: Biophysics, Medicine, Biotechnology, Evolutionary Biology, Ecology, Hematology, Infectious Diseases, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, uniform initialization voltage, spinel cobalt oxide, present study provides, lrs ), respectively, local electric field, cation valence state, concentrated switching voltage, low resistance state, high resistance state, resistive switching memories, enhancing resistive switching, schottky emission conduction, cycle switching endurance, 2 +, resistive switching performance, au ncs create, 3 , resistive switching, dependent resistance

Relation: https://figshare.com/articles/journal_contribution/Au_Nanocrystals_Modulate_Resistive_Switching_and_Magnetic_Properties_of_Spinel_Cobalt_Oxide-Based_Memory_Devices/24908540

الاتاحة: https://doi.org/10.1021/acsanm.3c04690.s001
https://figshare.com/articles/journal_contribution/Au_Nanocrystals_Modulate_Resistive_Switching_and_Magnetic_Properties_of_Spinel_Cobalt_Oxide-Based_Memory_Devices/24908540

المؤلفون: Golezar Gilanizadehdizaj, Debes Bhattacharyya, Jonathan Stringer, Kean Aw

المصدر: Sensors; Volume 23; Issue 5; Pages: 2443

مصطلحات موضوعية: flexible piezoresistive sensor, Schottky emission, thermionic emission, Ohmic conduction

وصف الملف: application/pdf

Relation: Electronic Sensors; https://dx.doi.org/10.3390/s23052443

الاتاحة: https://doi.org/10.3390/s23052443

المؤلفون: Muhammad Ismail, Chandreswar Mahata, Myounggon Kang, Sungjun Kim

المصدر: Nanomaterials, Vol 13, Iss 2603, p 2603 (2023)

مصطلحات موضوعية: tin oxide, resistive switching, multilevel resistance states, Schottky emission, neuromorphic system, Chemistry, QD1-999

Relation: https://www.mdpi.com/2079-4991/13/18/2603; https://doaj.org/toc/2079-4991; https://doaj.org/article/b5e18a4065044ffea31074394c4975e1

الاتاحة: https://doi.org/10.3390/nano13182603
https://doaj.org/article/b5e18a4065044ffea31074394c4975e1

المؤلفون: Xia Xiao, Jiajun Guo, Zexin Gao, Dashuai Zhai, Ruxin Liu, Shuchao Qin, Mehran Khan Alam, Zhi Sun

المصدر: Materials Research Express, Vol 10, Iss 5, p 056301 (2023)

مصطلحات موضوعية: complementary resistive switching, single sandwich structure, egg albumen, interfacial Schottky emission, non-inert electrodes, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185

Relation: https://doi.org/10.1088/2053-1591/acd67d; https://doaj.org/toc/2053-1591; https://doaj.org/article/9521125f2b5c414e9751128a9cbf9ce4

الاتاحة: https://doi.org/10.1088/2053-1591/acd67d
https://doaj.org/article/9521125f2b5c414e9751128a9cbf9ce4

المؤلفون: Yahui Liu, Peng Fu, Yanling Yin, Yuehua Peng, Wenjun Yang, Gang Zhao, Weike Wang, Weichang Zhou, Dongsheng Tang

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)

مصطلحات موضوعية: Hexagonal WO3 nanowire, Negative photoconductivity, Positive photoconductivity, Hydrogen ion, Schottky emission, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-019-2978-y; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/68955c82c59d486798bb1980d86ed857

المؤلفون: Badali, Yosef

المساهمون: orcid:0000-0001-7723-4188, Fakülteler, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümü

مصطلحات موضوعية: (PVC: Fe) interlayer, electrical parameters, MPS Schottky diodes, Poole-Frenkel mechanisms, Schottky emission (PFE, SE), surface-state

Relation: Physica Scripta; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; http://hdl.handle.net/11467/7188; 99

الاتاحة: http://hdl.handle.net/11467/7188

المؤلفون: Zhenhua Wu (223924), Yinxiao Feng (10910926), Yan Liu (25061), Huilie Shi (10910929), Shuai Zhang (115662), Zekun Liu (5434253), Zhiyu Hu (1502863)

مصطلحات موضوعية: Medicine, Neuroscience, Biotechnology, Evolutionary Biology, Mental Health, Infectious Diseases, Information Systems not elsewhere classified, resistance states, Pt, Heterojunction, RS behavior, voltage, material system, Te, application, bipolar, conduction mechanism, Numerical simulation, synergy model, Bipolar Resistive Switching, understanding, asymmetry, synaptic bionics, access memory, memristor, conductive filament, Schottky emission, low-resistance states, Ag, 1000 times

Relation: https://figshare.com/articles/journal_contribution/Bipolar_Resistive_Switching_in_the_Ag_Sb_sub_2_sub_Te_sub_3_sub_Pt_Heterojunction/14717344

الاتاحة: https://doi.org/10.1021/acsaelm.1c00341.s001

المؤلفون: Muhammad Ismail, Zahida Batool, Khalid Mahmood, Anwar Manzoor Rana, Byung-Do Yang, Sungjun Kim

المصدر: Results in Physics, Vol 18, Iss , Pp 103275- (2020)

مصطلحات موضوعية: Bilayer HfO2/ZrO2 structure, Thermal conductivity, Gibbs free energy, Resistive switching, Schottky emission, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2211379720317423; https://doaj.org/toc/2211-3797

URL الوصول: https://doaj.org/article/1031866856a04b61bd46244e9cfc7eb5

المؤلفون: Caihong Jia, Feng Yang, Lei Zhao, Gang Cheng, Guanghong Yang

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-9 (2019)

مصطلحات موضوعية: NiCo2O4 nanowires, Electrical transport properties, Schottky emission, Variable range hopping model, Nearest neighbor hopping model, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-018-2844-3; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/8d30bfdeb67c4b619b8317895de013de

المؤلفون: Zhuangzhuang Hu, Qian Feng, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)

مصطلحات موضوعية: β-Ga2O3 Schottky diode, Carrier transport mechanism, Reverse bias, Schottky emission, Breakdown voltage, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-018-2837-2; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/b53c42216e3b44b9832373ee6da87623

المؤلفون: D. J. J. Loy, P. A. Dananjaya, X. L. Hong, D. P. Shum, W. S. Lew

المصدر: Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)

مصطلحات موضوعية: Conduction Mechanism, Schottky Emission (SE), High Resistance State (HRS), Resistive Random Access Memory (RRAM), RRAM Devices, Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/1b6f9e51bf60453ea153bdeba152b645

المؤلفون: Muhammad Ismail, Ijaz Talib, Anwar Manzoor Rana, Tahira Akbar, Shazia Jabeen, Jinju Lee, Sungjun Kim

المصدر: Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018)

مصطلحات موضوعية: Heterostructure, Resistive switching, Effect of polarity, Cerium oxide, Schottky emission, Conduction mechanism, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-018-2738-4; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/3adb753f8de6437488f3f63428f3f6c9

المؤلفون: Muhammad Ismail, Sobia Ali Khan, Mehr Khalid Rahmani, Junhyeok Choi, Zahida Batool, Anwar Manzoor Rana, Sungjun Kim

المصدر: Materials Research Express, Vol 7, Iss 1, p 016307 (2020)

مصطلحات موضوعية: oxygen annealing effect, multilayer structure, ceria film, schottky emission, resistive switching, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185

Relation: https://doi.org/10.1088/2053-1591/ab61b1; https://doaj.org/toc/2053-1591; https://doaj.org/article/55178ef64345499ca64c64bf2958cd91

الاتاحة: https://doi.org/10.1088/2053-1591/ab61b1
https://doaj.org/article/55178ef64345499ca64c64bf2958cd91

المؤلفون: Boige, François, Trémouilles, David, Richardeau, Frédéric

المساهمون: LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Convertisseurs Statiques (LAPLACE-CS)

المصدر: ISSN: 0741-3106 ; IEEE Electron Device Letters ; https://laas.hal.science/hal-02020275 ; IEEE Electron Device Letters, 2019, 40 (5), pp.666-669. ⟨10.1109/led.2019.2896939⟩.

مصطلحات موضوعية: Short-circuit, gate oxide, SiC MOSFET, Fowler-Nordheim, Schottky emission, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: hal-02020275; https://laas.hal.science/hal-02020275; https://laas.hal.science/hal-02020275/document; https://laas.hal.science/hal-02020275/file/Boige%20et%20al.%20-%202019%20-%20Physical%20origin%20of%20the%20gate%20current%20surge%20during%20s.pdf; OATAO: 23888

الاتاحة: https://laas.hal.science/hal-02020275
https://laas.hal.science/hal-02020275/document
https://laas.hal.science/hal-02020275/file/Boige%20et%20al.%20-%202019%20-%20Physical%20origin%20of%20the%20gate%20current%20surge%20during%20s.pdf
https://doi.org/10.1109/led.2019.2896939

المؤلفون: P. Y. Belyavskiy, V. V. Plotnikov

المصدر: Известия высших учебных заведений России: Радиоэлектроника, Vol 0, Iss 1, Pp 38-43 (2016)

مصطلحات موضوعية: transport phenomenon, dielectric, conduction mechanisms, schottky emission, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://re.eltech.ru/jour/article/view/79; https://doaj.org/toc/1993-8985; https://doaj.org/toc/2658-4794

URL الوصول: https://doaj.org/article/066da282e74343afa835e163da17b073

المؤلفون: P. Y. Belyavskiy, V. V. Plotnikov, П. Ю. Белявский, В. В. Плотников

المصدر: Journal of the Russian Universities. Radioelectronics; № 1 (2016); 38-43 ; Известия высших учебных заведений России. Радиоэлектроника; № 1 (2016); 38-43 ; 2658-4794 ; 1993-8985

مصطلحات موضوعية: эмиссия Шотки, Dielectric, Conduction Mechanisms, Schottky Emission, диэлектрик, механизмы проводимости

وصف الملف: application/pdf

Relation: https://re.eltech.ru/jour/article/view/79/84; Пятаков А. П., Звездин А. К. Магнитоэлек-трические материалы и мультиферроики // Успехи физ. наук. 2012. Т. 182, № 6. С. 593-620.; Чопра К. Л. Электрические явления в тон-ких пленках / пер. с англ. М.: Мир, 1972. 424 с.; Шалимова К. В. Физика полупроводников. М.: Энергоатомиздат, 1985. 392 с.; Liedtke R., Grossmann M., Waser R. Capaci-tance and Admittance Spectroscopy Analysis of Hy-drogen-degraded Pt/(Ba, Sr)TiO3/Pt Thin-Film Ca-pacitors // Appl. Phys. Lett. 2000. Vol. 77, № 13. P. 2045-2047.; Chang S.-T., Lee J. Y. Electrical Conduction Mechanism in High-Dielectric-Constant (Ba0.5Sr0.5)TiO3 Thin Films // Appl. Phys. Lett. 2002. Vol. 80, № 4. P. 655-657.; Leakage Mechanism of (Ba0.7Sr0.3)TiO3 Thin Films in the Low-Temperature Range / H. Yang, K. Tao, B. Chen et al. // Appl. Phys. Lett. 2002. Vol. 81, № 25. P. 4817-4819.; Effect of Pt Bottom Electrode Texture Selec-tion on the Tetragonality and Physical Properties of Ba0.8Sr0.2TiO3 Thin Films Produced by Pulsed Laser Deposition / J. P. B. Silva, K. C. Sekhar, A. Almeida, J. A. Moreira, J. Martín-Sánchez, M. Pereira, A. Khodorov, M. J. M. Gomes // J. Appl. Phys. 2012. Vol. 112, iss. 4. P. 044105.; Effect of Concurrent Mg/Nb-doping on Dielec-tric Properties of Ba0.45Sr0.55TiO3 Thin Films / F. Alema, M. Reich, A. Reinholz, K. Pokhodnya // J. Appl. Phys. 2013. Vol. 114, iss. 8. P. 084102.; Izyumskaya N., Alivov Ya., Morkoc H. Ox-ides, Oxides, and More Oxides: High-Κ Oxides, Fer-roelectrics, Ferromagnetics, and Multiferroics // Crit. Rev. Solid. State and Mat. Science. 2009. Vol. 34, iss. 3-4. P. 89-179.; Wang Y.-P., Tseng T.-Y. Electronic Defect and Trap-Related Current of (Ba0.4Sr0.6)TiO3 Thin Films // J. Appl. Phys. 1997. Vol. 81, № 10. P. 6762-6766.; Deuterium-Induced Degradation of (Ba, Sr)TiO3 Films / J.-H. Ahn, P. C. McIntyre, L. W. Mirkarimi, S. R. Gilbert, J. Amano, M. Schulberg // Appl. Phys. Lett. 2000. Vol. 77, № 9. P. 1378-1380.; Improved Dielectric And Electrical Proper-ties of (Ba, Sr)TiO3 Thin Films Using Pt/LaNiO3 as the Top-Electrode Material / Y. H. Gao, J. L. Sun, J. H. Ma, X. J. Meng, J. H. Chu // Appl. Phys. A. 2008. Vol. 91. P. 541-544.; Enhanced Leakage Current Performance and Conduction Mechanisms of Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 Bilayered Thin Films / R. Li, S. Jiang, L. Gao, Y. Li // J. Appl. Phys. 2012. Vol. 112, iss. 7. P. 074113.; Зи С. Физика полупроводниковых прибо-ров / пер. с англ. М.: Мир, 1984. Т. 1. 456 с.; https://re.eltech.ru/jour/article/view/79

الاتاحة: https://re.eltech.ru/jour/article/view/79

المؤلفون: Gül, Fatih

المساهمون: RTEÜ, Mühendislik ve Mimarlık Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü, Gül, Fatih

مصطلحات موضوعية: Carrier transport mechanism, Resistive switching, Schottky emission, Poole-Frenkel, Space charge limit current, RRAM

وصف الملف: application/pdf

Relation: Materials Today-Proceedings; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; Gul, F. (2021). A simplified method to determine carrier transport mechanisms of metal-oxide resistive random access memory (RRAM) devices. Materials Today-Proceedings, 46, 6976-6978, 16. https://doi.org/10.1016/j.matpr.2021.03.274; https://doi.org/10.1016/j.matpr.2021.03.274; https://hdl.handle.net/11436/6546; 46; 6976; 6978

الاتاحة: https://hdl.handle.net/11436/6546
https://doi.org/10.1016/j.matpr.2021.03.274

المؤلفون: Sungjun Kim, Zahida Batool, Muhammad Ismail, Khalid Mahmood, Anwar Manzoor Rana, Byung-Do Yang

المصدر: Results in Physics, Vol 18, Iss, Pp 103275-(2020)

مصطلحات موضوعية: Materials science, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Electron spectroscopy, Oxygen, symbols.namesake, Thermal conductivity, X-ray photoelectron spectroscopy, 0103 physical sciences, Bilayer HfO2/ZrO2 structure, Resistive switching, Thin film, 010302 applied physics, Bilayer, Schottky diode, 021001 nanoscience & nanotechnology, lcsh:QC1-999, Gibbs free energy, chemistry, symbols, 0210 nano-technology, lcsh:Physics, Schottky emission

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::236ea3a5cc15b934b579e44f0942e2fa
http://www.sciencedirect.com/science/article/pii/S2211379720317423

المؤلفون: Knápek, Alexandr, Krcál, Ondřej, Grmela, Lubomír

المساهمون: Pihera, Josef, Steiner, František

مصطلحات موضوعية: mikroskopické katody, výroba, diagnostika, Schottkyho emise, microscopic cathods, fabrication, diagnostics, Schottky emission

وصف الملف: 4 s.; application/pdf

Relation: Electroscope; Electroscope. 2010, č. 1.; http://147.228.94.30/images/PDF/Rocnik2010/Cislo1_2010/r4c1c1.pdf; http://hdl.handle.net/11025/565

الاتاحة: http://hdl.handle.net/11025/565
http://147.228.94.30/images/PDF/Rocnik2010/Cislo1_2010/r4c1c1.pdf